FR2238249A1 - Metallic nitride conductor layers on semiconductor - for improved compat-ability with substrate - Google Patents

Metallic nitride conductor layers on semiconductor - for improved compat-ability with substrate

Info

Publication number
FR2238249A1
FR2238249A1 FR7411074A FR7411074A FR2238249A1 FR 2238249 A1 FR2238249 A1 FR 2238249A1 FR 7411074 A FR7411074 A FR 7411074A FR 7411074 A FR7411074 A FR 7411074A FR 2238249 A1 FR2238249 A1 FR 2238249A1
Authority
FR
France
Prior art keywords
semiconductor
compat
ability
substrate
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7411074A
Other languages
French (fr)
Other versions
FR2238249B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2238249A1 publication Critical patent/FR2238249A1/en
Application granted granted Critical
Publication of FR2238249B1 publication Critical patent/FR2238249B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Conductive Materials (AREA)

Abstract

Contacts are made to semiconductor devices using a contact layer a conductive refractory nitride of Ti, Zn, Hf, V, Vb, or Ta, the layer being formed as a thin film by deposition in a reduced pressure atmosphere of inert gas and N2. The process is for beam had devices IGFET's etc. esp. gate electrode; and the product being less subject to corrosion. The contacts are run as a conductive grid across the face of the dielectric layer.
FR7411074A 1973-07-16 1974-03-29 Metallic nitride conductor layers on semiconductor - for improved compat-ability with substrate Granted FR2238249A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US37963173A 1973-07-16 1973-07-16

Publications (2)

Publication Number Publication Date
FR2238249A1 true FR2238249A1 (en) 1975-02-14
FR2238249B1 FR2238249B1 (en) 1978-11-17

Family

ID=23498032

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7411074A Granted FR2238249A1 (en) 1973-07-16 1974-03-29 Metallic nitride conductor layers on semiconductor - for improved compat-ability with substrate

Country Status (4)

Country Link
JP (1) JPS5040085A (en)
BE (1) BE817616A (en)
DE (1) DE2433299A1 (en)
FR (1) FR2238249A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0194950A2 (en) 1985-03-15 1986-09-17 Fairchild Semiconductor Corporation High temperature interconnect system for an integrated circuit
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57150349U (en) * 1981-03-11 1982-09-21
JPS5830147A (en) * 1981-08-18 1983-02-22 Toshiba Corp Semiconductor device
US4829363A (en) * 1984-04-13 1989-05-09 Fairchild Camera And Instrument Corp. Structure for inhibiting dopant out-diffusion

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0194950A2 (en) 1985-03-15 1986-09-17 Fairchild Semiconductor Corporation High temperature interconnect system for an integrated circuit
EP0194950A3 (en) * 1985-03-15 1988-08-10 Fairchild Semiconductor Corporation High temperature interconnect system for an integrated circuit
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit
US5414301A (en) * 1985-03-15 1995-05-09 National Semiconductor Corporation High temperature interconnect system for an integrated circuit

Also Published As

Publication number Publication date
BE817616A (en) 1974-11-04
JPS5040085A (en) 1975-04-12
FR2238249B1 (en) 1978-11-17
DE2433299A1 (en) 1975-02-06

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Legal Events

Date Code Title Description
ST Notification of lapse