FR1454612A - Dispositif semi-conducteur - Google Patents
Dispositif semi-conducteurInfo
- Publication number
- FR1454612A FR1454612A FR34819A FR34819A FR1454612A FR 1454612 A FR1454612 A FR 1454612A FR 34819 A FR34819 A FR 34819A FR 34819 A FR34819 A FR 34819A FR 1454612 A FR1454612 A FR 1454612A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5938764 | 1964-10-17 | ||
JP3960765 | 1965-06-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1454612A true FR1454612A (fr) | 1966-02-11 |
Family
ID=26378997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR34819A Expired FR1454612A (fr) | 1964-10-17 | 1965-10-13 | Dispositif semi-conducteur |
Country Status (5)
Country | Link |
---|---|
US (1) | US3437891A (fr) |
DE (1) | DE1514228C3 (fr) |
FR (1) | FR1454612A (fr) |
GB (1) | GB1066159A (fr) |
NL (1) | NL150267B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2120042A1 (fr) * | 1970-12-28 | 1972-08-11 | Matsushita Electric Ind Co Ltd |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3921283A (en) * | 1971-06-08 | 1975-11-25 | Philips Corp | Semiconductor device and method of manufacturing the device |
US3831187A (en) * | 1973-04-11 | 1974-08-20 | Rca Corp | Thyristor having capacitively coupled control electrode |
US3829886A (en) * | 1973-05-21 | 1974-08-13 | Sperry Rand Corp | Bistable semiconductor temperature sensor |
US5536957A (en) * | 1990-01-16 | 1996-07-16 | Mitsubishi Denki Kabushiki Kaisha | MOS field effect transistor having source/drain regions surrounded by impurity wells |
US7327541B1 (en) | 1998-06-19 | 2008-02-05 | National Semiconductor Corporation | Operation of dual-directional electrostatic discharge protection device |
JP4176564B2 (ja) * | 2003-06-23 | 2008-11-05 | 株式会社東芝 | ウェハ移載装置及びこれを用いた半導体装置の製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA657345A (en) * | 1963-02-05 | Zenith Radio Corporation | Semi-conductor switching device | |
US3476993A (en) * | 1959-09-08 | 1969-11-04 | Gen Electric | Five layer and junction bridging terminal switching device |
NL265382A (fr) * | 1960-03-08 |
-
1965
- 1965-10-05 GB GB42280/65A patent/GB1066159A/en not_active Expired
- 1965-10-13 FR FR34819A patent/FR1454612A/fr not_active Expired
- 1965-10-14 NL NL656513327A patent/NL150267B/xx unknown
- 1965-10-15 DE DE1514228A patent/DE1514228C3/de not_active Expired
-
1967
- 1967-10-09 US US674017A patent/US3437891A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2120042A1 (fr) * | 1970-12-28 | 1972-08-11 | Matsushita Electric Ind Co Ltd |
Also Published As
Publication number | Publication date |
---|---|
DE1514228B2 (de) | 1971-02-25 |
NL150267B (nl) | 1976-07-15 |
DE1514228C3 (de) | 1974-08-22 |
GB1066159A (en) | 1967-04-19 |
US3437891A (en) | 1969-04-08 |
NL6513327A (fr) | 1966-04-18 |
DE1514228A1 (de) | 1969-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1460816A (fr) | Dispositif semi-conducteur | |
FR1479917A (fr) | Dispositif semi-conducteur | |
CH432661A (de) | Halbleitervorrichtung | |
FR1475436A (fr) | Dispositif semi-conducteur | |
FR1423235A (fr) | Dispositif semi-conducteur | |
FR1455195A (fr) | Dispositif semiconducteur photosensible | |
FR1440443A (fr) | Dispositif semi-conducteur | |
FR1454807A (fr) | Dispositif semi-conducteur unipolaire | |
CH424995A (de) | Halbleitervorrichtung | |
FR1454612A (fr) | Dispositif semi-conducteur | |
FR1489272A (fr) | Dispositif semi-conducteur | |
FR88680E (fr) | Dispositif semiconducteur | |
FR1443842A (fr) | Dispositif optique-électronique semi-conducteur | |
FR1408337A (fr) | Dispositif commutateur-sélecteur | |
FR1440576A (fr) | Dispositif semi-conducteur | |
FR1390651A (fr) | Dispositif bineur-décavaillonneur | |
FR1470898A (fr) | Dispositif semi-conducteur | |
FR1471729A (fr) | Dispositif semi-conducteur | |
FR1452258A (fr) | Dispositif semi-conducteurs | |
FR1452426A (fr) | Dispositif semi-conducteur | |
FR1434060A (fr) | Dispositif semi-conducteur | |
FR1431313A (fr) | Dispositif de semi-conducteur | |
FR1460267A (fr) | Dispositif à semi-conducteur | |
FR1433200A (fr) | Dispositif à semi-conducteur | |
FR1472985A (fr) | Dispositif à semi-conducteur |