FR1454612A - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR1454612A
FR1454612A FR34819A FR34819A FR1454612A FR 1454612 A FR1454612 A FR 1454612A FR 34819 A FR34819 A FR 34819A FR 34819 A FR34819 A FR 34819A FR 1454612 A FR1454612 A FR 1454612A
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR34819A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of FR1454612A publication Critical patent/FR1454612A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
FR34819A 1964-10-17 1965-10-13 Dispositif semi-conducteur Expired FR1454612A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5938764 1964-10-17
JP3960765 1965-06-29

Publications (1)

Publication Number Publication Date
FR1454612A true FR1454612A (fr) 1966-02-11

Family

ID=26378997

Family Applications (1)

Application Number Title Priority Date Filing Date
FR34819A Expired FR1454612A (fr) 1964-10-17 1965-10-13 Dispositif semi-conducteur

Country Status (5)

Country Link
US (1) US3437891A (fr)
DE (1) DE1514228C3 (fr)
FR (1) FR1454612A (fr)
GB (1) GB1066159A (fr)
NL (1) NL150267B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2120042A1 (fr) * 1970-12-28 1972-08-11 Matsushita Electric Ind Co Ltd

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3921283A (en) * 1971-06-08 1975-11-25 Philips Corp Semiconductor device and method of manufacturing the device
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US3829886A (en) * 1973-05-21 1974-08-13 Sperry Rand Corp Bistable semiconductor temperature sensor
US5536957A (en) * 1990-01-16 1996-07-16 Mitsubishi Denki Kabushiki Kaisha MOS field effect transistor having source/drain regions surrounded by impurity wells
US7327541B1 (en) 1998-06-19 2008-02-05 National Semiconductor Corporation Operation of dual-directional electrostatic discharge protection device
JP4176564B2 (ja) * 2003-06-23 2008-11-05 株式会社東芝 ウェハ移載装置及びこれを用いた半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA657345A (en) * 1963-02-05 Zenith Radio Corporation Semi-conductor switching device
US3476993A (en) * 1959-09-08 1969-11-04 Gen Electric Five layer and junction bridging terminal switching device
NL265382A (fr) * 1960-03-08

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2120042A1 (fr) * 1970-12-28 1972-08-11 Matsushita Electric Ind Co Ltd

Also Published As

Publication number Publication date
DE1514228B2 (de) 1971-02-25
NL150267B (nl) 1976-07-15
DE1514228C3 (de) 1974-08-22
GB1066159A (en) 1967-04-19
US3437891A (en) 1969-04-08
NL6513327A (fr) 1966-04-18
DE1514228A1 (de) 1969-05-22

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