FR1452258A - Dispositif semi-conducteurs - Google Patents
Dispositif semi-conducteursInfo
- Publication number
- FR1452258A FR1452258A FR26590A FR26590A FR1452258A FR 1452258 A FR1452258 A FR 1452258A FR 26590 A FR26590 A FR 26590A FR 26590 A FR26590 A FR 26590A FR 1452258 A FR1452258 A FR 1452258A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR26590A FR1452258A (fr) | 1964-07-31 | 1965-07-29 | Dispositif semi-conducteurs |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38655164A | 1964-07-31 | 1964-07-31 | |
FR26590A FR1452258A (fr) | 1964-07-31 | 1965-07-29 | Dispositif semi-conducteurs |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1452258A true FR1452258A (fr) | 1966-02-25 |
Family
ID=26165127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR26590A Expired FR1452258A (fr) | 1964-07-31 | 1965-07-29 | Dispositif semi-conducteurs |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1452258A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2285723A1 (fr) * | 1974-09-17 | 1976-04-16 | Northern Electric Co | Ensemble monolithique diode photoemettrice/modulateur |
-
1965
- 1965-07-29 FR FR26590A patent/FR1452258A/fr not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2285723A1 (fr) * | 1974-09-17 | 1976-04-16 | Northern Electric Co | Ensemble monolithique diode photoemettrice/modulateur |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1460816A (fr) | Dispositif semi-conducteur | |
FR1479917A (fr) | Dispositif semi-conducteur | |
CH432661A (de) | Halbleitervorrichtung | |
FR1475436A (fr) | Dispositif semi-conducteur | |
FR1423235A (fr) | Dispositif semi-conducteur | |
FR1455195A (fr) | Dispositif semiconducteur photosensible | |
FR1440443A (fr) | Dispositif semi-conducteur | |
FR1454807A (fr) | Dispositif semi-conducteur unipolaire | |
CH424995A (de) | Halbleitervorrichtung | |
FR1454612A (fr) | Dispositif semi-conducteur | |
FR1489272A (fr) | Dispositif semi-conducteur | |
FR88680E (fr) | Dispositif semiconducteur | |
FR1443842A (fr) | Dispositif optique-électronique semi-conducteur | |
FR1408337A (fr) | Dispositif commutateur-sélecteur | |
FR1440576A (fr) | Dispositif semi-conducteur | |
FR1390651A (fr) | Dispositif bineur-décavaillonneur | |
FR1471729A (fr) | Dispositif semi-conducteur | |
FR1470898A (fr) | Dispositif semi-conducteur | |
FR1452258A (fr) | Dispositif semi-conducteurs | |
FR1452426A (fr) | Dispositif semi-conducteur | |
FR1434060A (fr) | Dispositif semi-conducteur | |
FR1431313A (fr) | Dispositif de semi-conducteur | |
FR1433200A (fr) | Dispositif à semi-conducteur | |
FR1460267A (fr) | Dispositif à semi-conducteur | |
FR1472985A (fr) | Dispositif à semi-conducteur |