FI972315A0 - Menetelmä ja laite piikarbidi-yksikiteiden valmistamiseksi sublimaatiokasvatuksen avulla - Google Patents

Menetelmä ja laite piikarbidi-yksikiteiden valmistamiseksi sublimaatiokasvatuksen avulla

Info

Publication number
FI972315A0
FI972315A0 FI972315A FI972315A FI972315A0 FI 972315 A0 FI972315 A0 FI 972315A0 FI 972315 A FI972315 A FI 972315A FI 972315 A FI972315 A FI 972315A FI 972315 A0 FI972315 A0 FI 972315A0
Authority
FI
Finland
Prior art keywords
sublimation
culture
silicon carbide
single crystals
carbide single
Prior art date
Application number
FI972315A
Other languages
English (en)
Swedish (sv)
Other versions
FI972315A (fi
Inventor
Dietrich Stephani
Johannes Voelkl
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of FI972315A0 publication Critical patent/FI972315A0/fi
Publication of FI972315A publication Critical patent/FI972315A/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FI972315A 1994-12-01 1997-05-30 Menetelmä ja laite piikarbidi-yksikiteiden valmistamiseksi sublimaatiokasvatuksen avulla FI972315A (fi)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4442819 1994-12-01
PCT/DE1995/001576 WO1996017113A1 (de) 1994-12-01 1995-11-14 Verfahren und vorrichtung zum herstellen von siliciumcarbid-einkristallen durch sublimationszüchtung

Publications (2)

Publication Number Publication Date
FI972315A0 true FI972315A0 (fi) 1997-05-30
FI972315A FI972315A (fi) 1997-05-30

Family

ID=6534664

Family Applications (1)

Application Number Title Priority Date Filing Date
FI972315A FI972315A (fi) 1994-12-01 1997-05-30 Menetelmä ja laite piikarbidi-yksikiteiden valmistamiseksi sublimaatiokasvatuksen avulla

Country Status (8)

Country Link
EP (1) EP0795050B1 (fi)
JP (1) JP3902225B2 (fi)
KR (1) KR100415422B1 (fi)
DE (2) DE59506491D1 (fi)
FI (1) FI972315A (fi)
RU (1) RU2155829C2 (fi)
TW (1) TW282556B (fi)
WO (1) WO1996017113A1 (fi)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2747401B1 (fr) * 1996-04-10 1998-05-15 Commissariat Energie Atomique Dispositif et procede pour la formation de carbure de silicium (sic) monocristallin sur un germe
JP3725268B2 (ja) * 1996-11-14 2005-12-07 株式会社豊田中央研究所 単結晶の製造方法
EP1268882B1 (en) * 2000-03-13 2011-05-11 II-VI Incorporated Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide
FR2839730B1 (fr) * 2002-05-15 2004-08-27 Centre Nat Rech Scient Formation de carbure de silicium monocristallin
JP4499698B2 (ja) * 2006-10-04 2010-07-07 昭和電工株式会社 炭化珪素単結晶の製造方法
JP4688108B2 (ja) * 2007-10-26 2011-05-25 株式会社デンソー 種結晶の固定状態の評価方法
WO2013124464A1 (en) * 2012-02-23 2013-08-29 Sgl Carbon Se Cvd coated crucible and use
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
EP3892761A1 (en) 2016-04-28 2021-10-13 Kwansei Gakuin Educational Foundation Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer
JP7464806B2 (ja) * 2018-11-05 2024-04-10 学校法人関西学院 ＳｉＣ半導体基板及びその製造方法及びその製造装置
RU2736814C1 (ru) * 2020-04-03 2020-11-20 Федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В.И. Ульянова (Ленина)" Способ получения монокристаллического SiC

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147572A (en) * 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
JPH04265294A (ja) * 1991-02-19 1992-09-21 Toshiba Corp 半導体結晶の製造方法
JPH05208900A (ja) * 1992-01-28 1993-08-20 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長装置

Also Published As

Publication number Publication date
DE19581382D2 (de) 1997-08-21
WO1996017113A1 (de) 1996-06-06
EP0795050A1 (de) 1997-09-17
JPH10509689A (ja) 1998-09-22
KR100415422B1 (ko) 2004-03-18
DE59506491D1 (de) 1999-09-02
KR980700460A (ko) 1998-03-30
FI972315A (fi) 1997-05-30
TW282556B (fi) 1996-08-01
RU2155829C2 (ru) 2000-09-10
JP3902225B2 (ja) 2007-04-04
EP0795050B1 (de) 1999-07-28

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