KR970001615A - 실리콘 결정 성장 제어방법 - Google Patents

실리콘 결정 성장 제어방법

Info

Publication number
KR970001615A
KR970001615A KR1019960017506A KR19960017506A KR970001615A KR 970001615 A KR970001615 A KR 970001615A KR 1019960017506 A KR1019960017506 A KR 1019960017506A KR 19960017506 A KR19960017506 A KR 19960017506A KR 970001615 A KR970001615 A KR 970001615A
Authority
KR
South Korea
Prior art keywords
control method
crystal growth
silicon crystal
growth control
silicon
Prior art date
Application number
KR1019960017506A
Other languages
English (en)
Other versions
KR100426419B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970001615A publication Critical patent/KR970001615A/ko
Application granted granted Critical
Publication of KR100426419B1 publication Critical patent/KR100426419B1/ko

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/08—Measuring arrangements characterised by the use of optical techniques for measuring diameters
    • G01B11/10—Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving
    • G01B11/105—Measuring arrangements characterised by the use of optical techniques for measuring diameters of objects while moving using photoelectric detection means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1019960017506A 1995-06-02 1996-05-22 실리콘결정성장제어방법 KR100426419B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/459765 1995-06-02
US08/459,765 US5653799A (en) 1995-06-02 1995-06-02 Method for controlling growth of a silicon crystal

Publications (2)

Publication Number Publication Date
KR970001615A true KR970001615A (ko) 1997-01-24
KR100426419B1 KR100426419B1 (ko) 2004-06-16

Family

ID=23826062

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960017506A KR100426419B1 (ko) 1995-06-02 1996-05-22 실리콘결정성장제어방법

Country Status (8)

Country Link
US (2) US5653799A (ko)
EP (1) EP0745830B1 (ko)
JP (1) JP4018172B2 (ko)
KR (1) KR100426419B1 (ko)
CN (1) CN1079847C (ko)
DE (1) DE69625852T2 (ko)
MY (1) MY120292A (ko)
TW (1) TW289838B (ko)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2979462B2 (ja) * 1995-09-29 1999-11-15 住友金属工業株式会社 単結晶引き上げ方法
JP3099724B2 (ja) * 1996-03-15 2000-10-16 住友金属工業株式会社 シリコン単結晶のねじれ振動検知装置及びねじれ振動検知方法並びにそれを用いた単結晶の製造方法
JP3758743B2 (ja) * 1996-04-22 2006-03-22 コマツ電子金属株式会社 半導体単結晶製造装置
US6226032B1 (en) * 1996-07-16 2001-05-01 General Signal Corporation Crystal diameter control system
TW541365B (en) * 1996-08-30 2003-07-11 Sumitomo Sitix Corp Single crystal pulling method and single crystal pulling device
US5918196A (en) * 1996-11-29 1999-06-29 Cognex Corporation Vision system for analyzing solid-of-revolution radius profile
US5935322A (en) * 1997-04-15 1999-08-10 Komatsu Electronic Metals Co., Ltd. Method of pulling up a single crystal semiconductor
US5846318A (en) * 1997-07-17 1998-12-08 Memc Electric Materials, Inc. Method and system for controlling growth of a silicon crystal
EP0903428A3 (de) * 1997-09-03 2000-07-19 Leybold Systems GmbH Einrichtung und Verfahren für die Bestimmung von Durchmessern eines Kristalls
DE19738438B4 (de) * 1997-09-03 2010-04-08 Crystal Growing Systems Gmbh Einrichtung und Verfahren für die Bestimmung des Durchmessers eines Kristalls
DE19817709B4 (de) * 1998-04-21 2011-03-17 Crystal Growing Systems Gmbh Verfahren für die Überwachung einer Schmelze für die Herstellung von Kristallen
US5882402A (en) * 1997-09-30 1999-03-16 Memc Electronic Materials, Inc. Method for controlling growth of a silicon crystal
US5922127A (en) * 1997-09-30 1999-07-13 Memc Electronic Materials, Inc. Heat shield for crystal puller
US5961716A (en) * 1997-12-15 1999-10-05 Seh America, Inc. Diameter and melt measurement method used in automatically controlled crystal growth
JPH11190662A (ja) * 1997-12-26 1999-07-13 Sumitomo Sitix Corp 単結晶引上炉内融液の表面温度測定方法及び該方法に用いる装置
US6175652B1 (en) 1997-12-31 2001-01-16 Cognex Corporation Machine vision system for analyzing features based on multiple object images
US6030451A (en) * 1998-01-12 2000-02-29 Seh America, Inc. Two camera diameter control system with diameter tracking for silicon ingot growth
US5968263A (en) * 1998-04-01 1999-10-19 Memc Electronic Materials, Inc. Open-loop method and system for controlling growth of semiconductor crystal
US6175644B1 (en) 1998-05-01 2001-01-16 Cognex Corporation Machine vision system for object feature analysis and validation based on multiple object images
US6106612A (en) * 1998-06-04 2000-08-22 Seh America Inc. Level detector and method for detecting a surface level of a material in a container
US6160509A (en) * 1998-07-16 2000-12-12 Analytical Graphics, Inc. Method and apparatus for alerting a user regarding the position of a satellite
US6171391B1 (en) * 1998-10-14 2001-01-09 Memc Electronic Materials, Inc. Method and system for controlling growth of a silicon crystal
JP4616949B2 (ja) * 1999-03-17 2011-01-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 メルトレベル検出装置及び検出方法
US6776840B1 (en) 1999-03-22 2004-08-17 Memc Electronic Materials, Inc. Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process
US6241818B1 (en) 1999-04-07 2001-06-05 Memc Electronic Materials, Inc. Method and system of controlling taper growth in a semiconductor crystal growth process
US6203611B1 (en) 1999-10-19 2001-03-20 Memc Electronic Materials, Inc. Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth
JP4209082B2 (ja) * 2000-06-20 2009-01-14 コバレントマテリアル株式会社 単結晶引上げ装置および引上げ方法
US6570663B1 (en) 2000-07-07 2003-05-27 Seh America, Inc. Calibration method and device for visual measuring systems
US6454851B1 (en) 2000-11-09 2002-09-24 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
JP4150167B2 (ja) * 2001-02-16 2008-09-17 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
US6960254B2 (en) * 2003-07-21 2005-11-01 Memc Electronic Materials, Inc. Method to monitor and control the crystal cooling or quenching rate by measuring crystal surface temperature
US20060005761A1 (en) * 2004-06-07 2006-01-12 Memc Electronic Materials, Inc. Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length
JP4923452B2 (ja) * 2004-08-27 2012-04-25 株式会社デンソー ＳｉＣ単結晶の製造方法
US7291221B2 (en) * 2004-12-30 2007-11-06 Memc Electronic Materials, Inc. Electromagnetic pumping of liquid silicon in a crystal growing process
US7223304B2 (en) * 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
CN100346010C (zh) * 2005-05-13 2007-10-31 中国科学院上海硅酸盐研究所 一种熔体晶体实时观察***
EP2021279A2 (en) * 2006-04-13 2009-02-11 Cabot Corporation Production of silicon through a closed-loop process
JP4918897B2 (ja) * 2007-08-29 2012-04-18 株式会社Ｓｕｍｃｏ シリコン単結晶引上方法
US20100024717A1 (en) * 2008-07-31 2010-02-04 Benno Orschel Reversed action diameter control in a semiconductor crystal growth system
US8012255B2 (en) * 2008-07-31 2011-09-06 Sumco Phoenix Corporation Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
US8221545B2 (en) * 2008-07-31 2012-07-17 Sumco Phoenix Corporation Procedure for in-situ determination of thermal gradients at the crystal growth front
JP5446277B2 (ja) * 2009-01-13 2014-03-19 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法
US8545623B2 (en) * 2009-06-18 2013-10-01 Sumco Phoenix Corporation Method and apparatus for controlling the growth process of a monocrystalline silicon ingot
JP5859566B2 (ja) * 2010-12-30 2016-02-10 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッドＭｅｍｃ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 多数のカメラを用いる結晶の成長特性計測方法
CN102134739A (zh) * 2011-03-08 2011-07-27 宁夏日晶新能源装备股份有限公司 单晶炉自动引晶***及方法
CN103649380A (zh) * 2011-03-15 2014-03-19 Gtat公司 用于晶体生长装置的自动检视***
CN102220629B (zh) * 2011-07-25 2013-02-13 天津市环欧半导体材料技术有限公司 一种采用直径法控制区熔晶体自动生长方法及***
CN102534748B (zh) * 2012-02-03 2014-11-26 江苏协鑫硅材料科技发展有限公司 制备铸造单晶硅的装置及方法
DE102013210687B4 (de) * 2013-06-07 2018-12-06 Siltronic Ag Verfahren zur Regelung des Durchmessers eines Einkristalls auf einen Solldurchmesser
EP2886519B1 (de) * 2013-12-18 2016-05-25 Heraeus Quarzglas GmbH & Co. KG Vertikal-tiegelziehverfahren zur herstellung eines glaskörpers mit hohem kieselsäuregehalt
KR101674287B1 (ko) 2015-01-21 2016-11-08 주식회사 엘지실트론 단결정 잉곳의 직경 제어 시스템 및 제어 방법
JP6428372B2 (ja) * 2015-02-26 2018-11-28 株式会社Sumco 原料融液液面と種結晶下端との間隔測定方法、種結晶の予熱方法、および単結晶の製造方法
KR101758980B1 (ko) 2015-06-16 2017-07-17 주식회사 엘지실트론 잉곳 성장장치 및 그 성장방법
CN106480496A (zh) * 2015-08-26 2017-03-08 有研半导体材料有限公司 一种用于实现直拉单晶收尾自动化的装置
DE102016201778A1 (de) * 2016-02-05 2017-08-10 Siltronic Ag Verfahren zum Ermitteln und Regeln eines Durchmessers eines Einkristalls beim Ziehen des Einkristalls
DE102016219605A1 (de) 2016-10-10 2018-04-12 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Halbleitermaterial aus einer Schmelze, die in einem Tiegel enthalten ist
JP6885301B2 (ja) * 2017-11-07 2021-06-09 株式会社Sumco 単結晶の製造方法及び装置
CN110093663A (zh) * 2018-01-29 2019-08-06 上海新昇半导体科技有限公司 一种用于晶体直径测量的自动校准方法及校准***
JP6935790B2 (ja) * 2018-10-15 2021-09-15 株式会社Sumco 石英るつぼ内周面の評価方法及び石英るつぼ内周面の評価装置
JP7318738B2 (ja) * 2019-12-18 2023-08-01 株式会社Sumco 単結晶製造システム及び単結晶製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3740563A (en) * 1971-06-25 1973-06-19 Monsanto Co Electroptical system and method for sensing and controlling the diameter and melt level of pulled crystals
US4350557A (en) * 1974-06-14 1982-09-21 Ferrofluidics Corporation Method for circumferential dimension measuring and control in crystal rod pulling
US4710258A (en) * 1984-11-30 1987-12-01 General Signal Corporation System for controlling the diameter of a crystal in a crystal growing furnace
JPS63239181A (ja) * 1987-03-26 1988-10-05 Kyushu Denshi Kinzoku Kk Ｃｚ炉内の結晶直径測定方法
JPS63256594A (ja) * 1987-04-13 1988-10-24 Kyushu Denshi Kinzoku Kk Ｃｚ炉内の結晶直径計測方法
JPS6483595A (en) * 1987-09-25 1989-03-29 Shinetsu Handotai Kk Device for measuring crystal diameter
JPH03112886A (ja) * 1989-09-26 1991-05-14 Kawasaki Steel Corp 単結晶引き上げ状態の推定方法
JPH03112885A (ja) * 1989-09-26 1991-05-14 Kawasaki Steel Corp 単結晶引き上げ時の結晶ダイの検知方法
JPH06102590B2 (ja) * 1990-02-28 1994-12-14 信越半導体株式会社 Ｃｚ法による単結晶ネック部育成自動制御方法
JP2601930B2 (ja) * 1990-03-29 1997-04-23 信越半導体株式会社 単結晶ネツク部直径制御方法及び装置
JPH0663824B2 (ja) * 1990-04-29 1994-08-22 信越半導体株式会社 湯面振動測定方法及び装置
JPH0726817B2 (ja) * 1990-07-28 1995-03-29 信越半導体株式会社 結晶径測定装置
JPH0717475B2 (ja) * 1991-02-14 1995-03-01 信越半導体株式会社 単結晶ネック部育成自動制御方法
JPH04300283A (ja) * 1991-03-27 1992-10-23 Osaka Titanium Co Ltd Ｃｚ法における液面レベル測定法
US5178720A (en) * 1991-08-14 1993-01-12 Memc Electronic Materials, Inc. Method for controlling oxygen content of silicon crystals using a combination of cusp magnetic field and crystal and crucible rotation rates
DE4231162C2 (de) * 1992-09-17 1996-03-14 Wacker Siltronic Halbleitermat Verfahren zur Regelung der Schmelzenhöhe während des Ziehens von Einkristallen
JP2538748B2 (ja) * 1992-11-27 1996-10-02 信越半導体株式会社 結晶径測定装置

Also Published As

Publication number Publication date
KR100426419B1 (ko) 2004-06-16
JP4018172B2 (ja) 2007-12-05
CN1147570A (zh) 1997-04-16
EP0745830A2 (en) 1996-12-04
CN1079847C (zh) 2002-02-27
US5653799A (en) 1997-08-05
JPH08333197A (ja) 1996-12-17
DE69625852T2 (de) 2003-11-20
DE69625852D1 (de) 2003-02-27
EP0745830A3 (en) 1998-05-20
EP0745830B1 (en) 2003-01-22
MY120292A (en) 2005-10-31
TW289838B (en) 1996-11-01
US5665159A (en) 1997-09-09

Similar Documents

Publication Publication Date Title
KR970001615A (ko) 실리콘 결정 성장 제어방법
NO982991D0 (no) Veksthormon-sekretagoguer
DK0828692T3 (da) Ny fremgangsmåde til styring af biologisk nedbrydning
KR970704918A (ko) 단결정 제조장치 및 제조방법
DE69601763T2 (de) Einrichtung zur Antriebsregelung
DE69620107T2 (de) Kristallisationsverfahren
KR970001365A (ko) 알킬하이드로겐클로로실란의 제조방법
DE69521114D1 (de) Bioreaktor
FI973116A (fi) Upokas
DE69605978T2 (de) Sensor und Anpassungsverfahren dafür
SG49058A1 (en) Improved method for growing silicon crystal
DE69528051T2 (de) Kristallwachstumsverfahren
DE59610014D1 (de) Schwingquarzsensor
EE03161B1 (et) Meetod idandatava seemnematerjali töötlemiseks
DE69606100T2 (de) Dotieren von kristallinen Substraten
DE69604455D1 (de) Einkristallziehvorrichtung
DE59609469D1 (de) Bioreaktor
DE69606449T2 (de) Züchtung von Silizium-Einkristall
NO973103D0 (no) Fremgangsmåte for inhibering av veksthormoneffekter
DE69705458T2 (de) Kristallzüchtungssubstrat
DE59601759D1 (de) Kristallziehanlage
DE69522815T2 (de) Epitaxie-schichtstruktur
KR940022683U (ko) 단결정 성장장치
GB9500791D0 (en) Protein crystal growth system
KR970007731U (ko) 지주 삽입식 화분

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130312

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20140312

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee