EP3612608A4 - SELF-STOPPING POLISHING COMPOSITION AND METHOD OF OXIDE BULK PLANARING - Google Patents

SELF-STOPPING POLISHING COMPOSITION AND METHOD OF OXIDE BULK PLANARING Download PDF

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Publication number
EP3612608A4
EP3612608A4 EP18788475.4A EP18788475A EP3612608A4 EP 3612608 A4 EP3612608 A4 EP 3612608A4 EP 18788475 A EP18788475 A EP 18788475A EP 3612608 A4 EP3612608 A4 EP 3612608A4
Authority
EP
European Patent Office
Prior art keywords
self
polishing composition
bulk oxide
stopping polishing
oxide planarization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18788475.4A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3612608A1 (en
Inventor
Alexander W. Hains
Juyeon Chang
Tina C. Li
Viet LAM
Ji Cui
Sarah Brosnan
Chul Woo Nam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of EP3612608A1 publication Critical patent/EP3612608A1/en
Publication of EP3612608A4 publication Critical patent/EP3612608A4/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
EP18788475.4A 2017-04-17 2018-03-23 SELF-STOPPING POLISHING COMPOSITION AND METHOD OF OXIDE BULK PLANARING Pending EP3612608A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762486219P 2017-04-17 2017-04-17
PCT/US2018/024067 WO2018194792A1 (en) 2017-04-17 2018-03-23 Self-stopping polishing composition and method for bulk oxide planarization

Publications (2)

Publication Number Publication Date
EP3612608A1 EP3612608A1 (en) 2020-02-26
EP3612608A4 true EP3612608A4 (en) 2021-01-20

Family

ID=63856438

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18788475.4A Pending EP3612608A4 (en) 2017-04-17 2018-03-23 SELF-STOPPING POLISHING COMPOSITION AND METHOD OF OXIDE BULK PLANARING

Country Status (6)

Country Link
EP (1) EP3612608A4 (zh)
JP (1) JP7132942B2 (zh)
KR (1) KR102671229B1 (zh)
CN (2) CN113637412A (zh)
TW (1) TWI663231B (zh)
WO (1) WO2018194792A1 (zh)

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JP7220522B2 (ja) * 2018-05-24 2023-02-10 株式会社バイコウスキージャパン 研磨砥粒、その製造方法、それを含む研磨スラリー及びそれを用いる研磨方法
JP2022553346A (ja) 2019-10-22 2022-12-22 シーエムシー マテリアルズ，インコーポレイティド 酸化ケイ素及び炭素ドープ酸化ケイ素ｃｍｐのための組成物並びに方法
JP2022552895A (ja) 2019-10-22 2022-12-20 シーエムシー マテリアルズ，インコーポレイティド 誘電体ｃｍｐのための組成物及び方法
TW202122524A (zh) * 2019-10-22 2021-06-16 美商Ｃｍｃ材料股份有限公司 自停止性拋光組合物及方法
TWI767355B (zh) * 2019-10-24 2022-06-11 美商慧盛材料美國責任有限公司 高氧化物移除速率的淺溝隔離化學機械平坦化組合物、系統及方法
CN113004798B (zh) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
JP7409918B2 (ja) * 2020-03-13 2024-01-09 株式会社フジミインコーポレーテッド 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法
CN114621683A (zh) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
WO2022140334A1 (en) * 2020-12-21 2022-06-30 Cmc Materials, Inc. Self-stopping polishing composition and method for high topological selectivity
WO2023013059A1 (ja) * 2021-08-06 2023-02-09 昭和電工マテリアルズ株式会社 Ｃｍｐ用研磨液、ｃｍｐ用研磨液セット及び研磨方法
US20230242791A1 (en) * 2022-02-03 2023-08-03 Cmc Materials, Inc. Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon
CN115160933B (zh) * 2022-07-27 2023-11-28 河北工业大学 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法
WO2024111032A1 (ja) * 2022-11-21 2024-05-30 株式会社レゾナック Ｃｍｐ用研磨液、ｃｍｐ用研磨液セット及び研磨方法

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KR20140085265A (ko) * 2012-12-27 2014-07-07 제일모직주식회사 Cmp 슬러리 조성물　및 이를 이용한 연마 방법
WO2017011451A1 (en) * 2015-07-13 2017-01-19 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate

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US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20060096179A1 (en) * 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
JP5133874B2 (ja) * 2005-04-28 2013-01-30 テクノ セミケム シーオー．， エルティーディー． 高段差酸化膜の平坦化のための自動研磨停止機能を有する化学機械的研磨組成物
KR100661273B1 (ko) * 2005-04-28 2006-12-26 테크노세미켐 주식회사 고단차 산화막의 평탄화를 위한 화학기계적 연마조성물
JP2009094233A (ja) * 2007-10-05 2009-04-30 Showa Denko Kk 半導体基板用研磨組成物
JP5518869B2 (ja) * 2008-09-12 2014-06-11 フエロ コーポレーション 化学的機械研磨用組成物、その製造方法、及びその使用方法
TWI472601B (zh) * 2009-12-31 2015-02-11 Cheil Ind Inc 化學機械拋光漿體組成物及使用該組成物之拋光方法
KR101894712B1 (ko) * 2010-09-08 2018-09-04 바스프 에스이 산화규소 유전체 필름 및 폴리실리콘 및/또는 질화규소 필름을 함유하는 기판의 화학적 기계적 연마 방법
JP6222907B2 (ja) * 2012-09-06 2017-11-01 株式会社フジミインコーポレーテッド 研磨用組成物
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US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
KR101524624B1 (ko) * 2013-11-18 2015-06-03 주식회사 케이씨텍 고단차 연마용 슬러리 첨가제 조성물 및 이를 포함하는 고단차 연마용 슬러리 조성물
US9735030B2 (en) * 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
KR102426915B1 (ko) * 2014-12-24 2022-08-02 솔브레인 주식회사 화학 기계적 연마용 슬러리 조성물, 저유전율막의 화학 기계적 연마 방법 및 반도체 소자의 제조방법
US9758697B2 (en) * 2015-03-05 2017-09-12 Cabot Microelectronics Corporation Polishing composition containing cationic polymer additive
US20170066944A1 (en) * 2015-09-03 2017-03-09 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate

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KR20140085265A (ko) * 2012-12-27 2014-07-07 제일모직주식회사 Cmp 슬러리 조성물　및 이를 이용한 연마 방법
WO2017011451A1 (en) * 2015-07-13 2017-01-19 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate

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Title
See also references of WO2018194792A1 *

Also Published As

Publication number Publication date
CN110520493B (zh) 2022-11-22
CN110520493A (zh) 2019-11-29
EP3612608A1 (en) 2020-02-26
TW201839077A (zh) 2018-11-01
JP7132942B2 (ja) 2022-09-07
TWI663231B (zh) 2019-06-21
JP2020517117A (ja) 2020-06-11
KR20190132537A (ko) 2019-11-27
CN113637412A (zh) 2021-11-12
KR102671229B1 (ko) 2024-06-03
WO2018194792A1 (en) 2018-10-25

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