EP3612608A4 - SELF-STOPPING POLISHING COMPOSITION AND METHOD OF OXIDE BULK PLANARING - Google Patents
SELF-STOPPING POLISHING COMPOSITION AND METHOD OF OXIDE BULK PLANARING Download PDFInfo
- Publication number
- EP3612608A4 EP3612608A4 EP18788475.4A EP18788475A EP3612608A4 EP 3612608 A4 EP3612608 A4 EP 3612608A4 EP 18788475 A EP18788475 A EP 18788475A EP 3612608 A4 EP3612608 A4 EP 3612608A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- self
- polishing composition
- bulk oxide
- stopping polishing
- oxide planarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762486219P | 2017-04-17 | 2017-04-17 | |
PCT/US2018/024067 WO2018194792A1 (en) | 2017-04-17 | 2018-03-23 | Self-stopping polishing composition and method for bulk oxide planarization |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3612608A1 EP3612608A1 (en) | 2020-02-26 |
EP3612608A4 true EP3612608A4 (en) | 2021-01-20 |
Family
ID=63856438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18788475.4A Pending EP3612608A4 (en) | 2017-04-17 | 2018-03-23 | SELF-STOPPING POLISHING COMPOSITION AND METHOD OF OXIDE BULK PLANARING |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP3612608A4 (zh) |
JP (1) | JP7132942B2 (zh) |
KR (1) | KR102671229B1 (zh) |
CN (2) | CN113637412A (zh) |
TW (1) | TWI663231B (zh) |
WO (1) | WO2018194792A1 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7220522B2 (ja) * | 2018-05-24 | 2023-02-10 | 株式会社バイコウスキージャパン | 研磨砥粒、その製造方法、それを含む研磨スラリー及びそれを用いる研磨方法 |
JP2022553346A (ja) | 2019-10-22 | 2022-12-22 | シーエムシー マテリアルズ,インコーポレイティド | 酸化ケイ素及び炭素ドープ酸化ケイ素cmpのための組成物並びに方法 |
JP2022552895A (ja) | 2019-10-22 | 2022-12-20 | シーエムシー マテリアルズ,インコーポレイティド | 誘電体cmpのための組成物及び方法 |
TW202122524A (zh) * | 2019-10-22 | 2021-06-16 | 美商Cmc材料股份有限公司 | 自停止性拋光組合物及方法 |
TWI767355B (zh) * | 2019-10-24 | 2022-06-11 | 美商慧盛材料美國責任有限公司 | 高氧化物移除速率的淺溝隔離化學機械平坦化組合物、系統及方法 |
CN113004798B (zh) * | 2019-12-19 | 2024-04-12 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
JP7409918B2 (ja) * | 2020-03-13 | 2024-01-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨用組成物の製造方法、研磨方法および半導体基板の製造方法 |
CN114621683A (zh) * | 2020-12-11 | 2022-06-14 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其使用方法 |
WO2022140334A1 (en) * | 2020-12-21 | 2022-06-30 | Cmc Materials, Inc. | Self-stopping polishing composition and method for high topological selectivity |
WO2023013059A1 (ja) * | 2021-08-06 | 2023-02-09 | 昭和電工マテリアルズ株式会社 | Cmp用研磨液、cmp用研磨液セット及び研磨方法 |
US20230242791A1 (en) * | 2022-02-03 | 2023-08-03 | Cmc Materials, Inc. | Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon |
CN115160933B (zh) * | 2022-07-27 | 2023-11-28 | 河北工业大学 | 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法 |
WO2024111032A1 (ja) * | 2022-11-21 | 2024-05-30 | 株式会社レゾナック | Cmp用研磨液、cmp用研磨液セット及び研磨方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140085265A (ko) * | 2012-12-27 | 2014-07-07 | 제일모직주식회사 | Cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
WO2017011451A1 (en) * | 2015-07-13 | 2017-01-19 | Cabot Microelectronics Corporation | Methods and compositions for processing dielectric substrate |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
US20060096179A1 (en) * | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
JP5133874B2 (ja) * | 2005-04-28 | 2013-01-30 | テクノ セミケム シーオー., エルティーディー. | 高段差酸化膜の平坦化のための自動研磨停止機能を有する化学機械的研磨組成物 |
KR100661273B1 (ko) * | 2005-04-28 | 2006-12-26 | 테크노세미켐 주식회사 | 고단차 산화막의 평탄화를 위한 화학기계적 연마조성물 |
JP2009094233A (ja) * | 2007-10-05 | 2009-04-30 | Showa Denko Kk | 半導体基板用研磨組成物 |
JP5518869B2 (ja) * | 2008-09-12 | 2014-06-11 | フエロ コーポレーション | 化学的機械研磨用組成物、その製造方法、及びその使用方法 |
TWI472601B (zh) * | 2009-12-31 | 2015-02-11 | Cheil Ind Inc | 化學機械拋光漿體組成物及使用該組成物之拋光方法 |
KR101894712B1 (ko) * | 2010-09-08 | 2018-09-04 | 바스프 에스이 | 산화규소 유전체 필름 및 폴리실리콘 및/또는 질화규소 필름을 함유하는 기판의 화학적 기계적 연마 방법 |
JP6222907B2 (ja) * | 2012-09-06 | 2017-11-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US20160122696A1 (en) * | 2013-05-17 | 2016-05-05 | Advanced Technology Materials, Inc. | Compositions and methods for removing ceria particles from a surface |
US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
US9434859B2 (en) * | 2013-09-24 | 2016-09-06 | Cabot Microelectronics Corporation | Chemical-mechanical planarization of polymer films |
US9340706B2 (en) * | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
KR101524624B1 (ko) * | 2013-11-18 | 2015-06-03 | 주식회사 케이씨텍 | 고단차 연마용 슬러리 첨가제 조성물 및 이를 포함하는 고단차 연마용 슬러리 조성물 |
US9735030B2 (en) * | 2014-09-05 | 2017-08-15 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for polishing cobalt films |
KR102426915B1 (ko) * | 2014-12-24 | 2022-08-02 | 솔브레인 주식회사 | 화학 기계적 연마용 슬러리 조성물, 저유전율막의 화학 기계적 연마 방법 및 반도체 소자의 제조방법 |
US9758697B2 (en) * | 2015-03-05 | 2017-09-12 | Cabot Microelectronics Corporation | Polishing composition containing cationic polymer additive |
US20170066944A1 (en) * | 2015-09-03 | 2017-03-09 | Cabot Microelectronics Corporation | Methods and compositions for processing dielectric substrate |
-
2018
- 2018-03-23 CN CN202110855832.1A patent/CN113637412A/zh active Pending
- 2018-03-23 JP JP2019556638A patent/JP7132942B2/ja active Active
- 2018-03-23 TW TW107110067A patent/TWI663231B/zh active
- 2018-03-23 CN CN201880025600.XA patent/CN110520493B/zh active Active
- 2018-03-23 EP EP18788475.4A patent/EP3612608A4/en active Pending
- 2018-03-23 WO PCT/US2018/024067 patent/WO2018194792A1/en unknown
- 2018-03-23 KR KR1020197033492A patent/KR102671229B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140085265A (ko) * | 2012-12-27 | 2014-07-07 | 제일모직주식회사 | Cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
WO2017011451A1 (en) * | 2015-07-13 | 2017-01-19 | Cabot Microelectronics Corporation | Methods and compositions for processing dielectric substrate |
Non-Patent Citations (1)
Title |
---|
See also references of WO2018194792A1 * |
Also Published As
Publication number | Publication date |
---|---|
CN110520493B (zh) | 2022-11-22 |
CN110520493A (zh) | 2019-11-29 |
EP3612608A1 (en) | 2020-02-26 |
TW201839077A (zh) | 2018-11-01 |
JP7132942B2 (ja) | 2022-09-07 |
TWI663231B (zh) | 2019-06-21 |
JP2020517117A (ja) | 2020-06-11 |
KR20190132537A (ko) | 2019-11-27 |
CN113637412A (zh) | 2021-11-12 |
KR102671229B1 (ko) | 2024-06-03 |
WO2018194792A1 (en) | 2018-10-25 |
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A4 | Supplementary search report drawn up and despatched |
Effective date: 20201218 |
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RIC1 | Information provided on ipc code assigned before grant |
Ipc: C09G 1/02 20060101AFI20201214BHEP Ipc: C09G 1/04 20060101ALI20201214BHEP Ipc: C09K 3/14 20060101ALI20201214BHEP Ipc: H01L 21/3105 20060101ALI20201214BHEP |
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RAP3 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: CMC MATERIALS, INC. |
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RAP3 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: CMC MARERIALS LLC |
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RAP3 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: CMC MATERIALS LLC |
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Effective date: 20240513 |