EP3612608A4 - Self-stopping polishing composition and method for bulk oxide planarization - Google Patents
Self-stopping polishing composition and method for bulk oxide planarization Download PDFInfo
- Publication number
- EP3612608A4 EP3612608A4 EP18788475.4A EP18788475A EP3612608A4 EP 3612608 A4 EP3612608 A4 EP 3612608A4 EP 18788475 A EP18788475 A EP 18788475A EP 3612608 A4 EP3612608 A4 EP 3612608A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- self
- polishing composition
- bulk oxide
- stopping polishing
- oxide planarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Dispersion Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762486219P | 2017-04-17 | 2017-04-17 | |
PCT/US2018/024067 WO2018194792A1 (en) | 2017-04-17 | 2018-03-23 | Self-stopping polishing composition and method for bulk oxide planarization |
Publications (2)
Publication Number | Publication Date |
---|---|
EP3612608A1 EP3612608A1 (en) | 2020-02-26 |
EP3612608A4 true EP3612608A4 (en) | 2021-01-20 |
Family
ID=63856438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18788475.4A Pending EP3612608A4 (en) | 2017-04-17 | 2018-03-23 | Self-stopping polishing composition and method for bulk oxide planarization |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP3612608A4 (en) |
JP (1) | JP7132942B2 (en) |
KR (1) | KR102671229B1 (en) |
CN (2) | CN110520493B (en) |
TW (1) | TWI663231B (en) |
WO (1) | WO2018194792A1 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7220522B2 (en) * | 2018-05-24 | 2023-02-10 | 株式会社バイコウスキージャパン | Abrasive grains, manufacturing method thereof, polishing slurry containing the same, and polishing method using the same |
CN114599750A (en) | 2019-10-22 | 2022-06-07 | Cmc材料股份有限公司 | Compositions and methods for chemical mechanical polishing of silicon oxides and carbon-doped silicon oxides |
CN114585699A (en) * | 2019-10-22 | 2022-06-03 | Cmc材料股份有限公司 | Self-stopping polishing composition and method |
KR20220087494A (en) * | 2019-10-22 | 2022-06-24 | 씨엠씨 머티리얼즈, 인코포레이티드 | Compositions and methods for dielectric CMP |
TWI767355B (en) * | 2019-10-24 | 2022-06-11 | 美商慧盛材料美國責任有限公司 | High oxide removal rates shallow trench isolation chemical mechanical planarization compositions, system and method |
CN113004798B (en) * | 2019-12-19 | 2024-04-12 | 安集微电子(上海)有限公司 | Chemical mechanical polishing solution |
JP7409918B2 (en) * | 2020-03-13 | 2024-01-09 | 株式会社フジミインコーポレーテッド | Polishing composition, method for producing polishing composition, polishing method, and method for producing semiconductor substrate |
CN114621683A (en) * | 2020-12-11 | 2022-06-14 | 安集微电子(上海)有限公司 | Chemical mechanical polishing solution and use method thereof |
JP2024500162A (en) * | 2020-12-21 | 2024-01-04 | シーエムシー マテリアルズ リミティド ライアビリティ カンパニー | Self-terminating polishing compositions and methods for high topological selectivity |
WO2023013059A1 (en) * | 2021-08-06 | 2023-02-09 | 昭和電工マテリアルズ株式会社 | Cmp polishing liquid, cmp polishing liquid set, and polishing method |
US20230242791A1 (en) * | 2022-02-03 | 2023-08-03 | Cmc Materials, Inc. | Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon |
CN115160933B (en) * | 2022-07-27 | 2023-11-28 | 河北工业大学 | Alkaline polishing solution for cobalt CMP of cobalt interconnection integrated circuit and preparation method thereof |
WO2024111032A1 (en) * | 2022-11-21 | 2024-05-30 | 株式会社レゾナック | Cmp polishing liquid, cmp polishing liquid set, and polishing method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140085265A (en) * | 2012-12-27 | 2014-07-07 | 제일모직주식회사 | Cmp slurry composition and polishing method using the same |
WO2017011451A1 (en) * | 2015-07-13 | 2017-01-19 | Cabot Microelectronics Corporation | Methods and compositions for processing dielectric substrate |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
US20060096179A1 (en) * | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
KR100661273B1 (en) * | 2005-04-28 | 2006-12-26 | 테크노세미켐 주식회사 | Abrasive composition for polishing of wafer |
JP5133874B2 (en) * | 2005-04-28 | 2013-01-30 | テクノ セミケム シーオー., エルティーディー. | Chemical mechanical polishing composition with automatic polishing stop function for planarization of high step oxide film |
JP2009094233A (en) * | 2007-10-05 | 2009-04-30 | Showa Denko Kk | Polishing composition for semiconductor substrate |
CN102149789A (en) * | 2008-09-12 | 2011-08-10 | 费罗公司 | Chemical-mechanical polishing compositions and methods of making and using the same |
KR101469258B1 (en) * | 2009-12-31 | 2014-12-09 | 제일모직주식회사 | CMP slurry compositions and polishing method using the same |
US20130171824A1 (en) * | 2010-09-08 | 2013-07-04 | Basf Se | Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films |
JP6222907B2 (en) * | 2012-09-06 | 2017-11-01 | 株式会社フジミインコーポレーテッド | Polishing composition |
US20160122696A1 (en) * | 2013-05-17 | 2016-05-05 | Advanced Technology Materials, Inc. | Compositions and methods for removing ceria particles from a surface |
US9303187B2 (en) * | 2013-07-22 | 2016-04-05 | Cabot Microelectronics Corporation | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
US9434859B2 (en) * | 2013-09-24 | 2016-09-06 | Cabot Microelectronics Corporation | Chemical-mechanical planarization of polymer films |
US9340706B2 (en) * | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
KR101524624B1 (en) * | 2013-11-18 | 2015-06-03 | 주식회사 케이씨텍 | Additive composition of high aspect ratio polishing slurry and high aspect ratio polishing slurry composition comprising the same |
US9735030B2 (en) * | 2014-09-05 | 2017-08-15 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for polishing cobalt films |
KR102426915B1 (en) * | 2014-12-24 | 2022-08-02 | 솔브레인 주식회사 | Chemical mechanical polishing composition, chemical mechanical polishing method for a low-k dielectric film and method of preparing semiconductor device |
US9758697B2 (en) * | 2015-03-05 | 2017-09-12 | Cabot Microelectronics Corporation | Polishing composition containing cationic polymer additive |
JP6989493B2 (en) * | 2015-09-03 | 2022-01-05 | シーエムシー マテリアルズ,インコーポレイティド | Methods and Compositions for Machining Dielectric Substrates |
-
2018
- 2018-03-23 EP EP18788475.4A patent/EP3612608A4/en active Pending
- 2018-03-23 WO PCT/US2018/024067 patent/WO2018194792A1/en unknown
- 2018-03-23 JP JP2019556638A patent/JP7132942B2/en active Active
- 2018-03-23 CN CN201880025600.XA patent/CN110520493B/en active Active
- 2018-03-23 TW TW107110067A patent/TWI663231B/en active
- 2018-03-23 CN CN202110855832.1A patent/CN113637412A/en active Pending
- 2018-03-23 KR KR1020197033492A patent/KR102671229B1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20140085265A (en) * | 2012-12-27 | 2014-07-07 | 제일모직주식회사 | Cmp slurry composition and polishing method using the same |
WO2017011451A1 (en) * | 2015-07-13 | 2017-01-19 | Cabot Microelectronics Corporation | Methods and compositions for processing dielectric substrate |
Non-Patent Citations (1)
Title |
---|
See also references of WO2018194792A1 * |
Also Published As
Publication number | Publication date |
---|---|
KR20190132537A (en) | 2019-11-27 |
JP7132942B2 (en) | 2022-09-07 |
TWI663231B (en) | 2019-06-21 |
TW201839077A (en) | 2018-11-01 |
JP2020517117A (en) | 2020-06-11 |
CN110520493A (en) | 2019-11-29 |
KR102671229B1 (en) | 2024-06-03 |
CN110520493B (en) | 2022-11-22 |
EP3612608A1 (en) | 2020-02-26 |
WO2018194792A1 (en) | 2018-10-25 |
CN113637412A (en) | 2021-11-12 |
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Legal Events
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
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17P | Request for examination filed |
Effective date: 20191114 |
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AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
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AX | Request for extension of the european patent |
Extension state: BA ME |
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DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20201218 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: C09G 1/02 20060101AFI20201214BHEP Ipc: C09G 1/04 20060101ALI20201214BHEP Ipc: C09K 3/14 20060101ALI20201214BHEP Ipc: H01L 21/3105 20060101ALI20201214BHEP |
|
RAP3 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: CMC MATERIALS, INC. |
|
RAP3 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: CMC MARERIALS LLC |
|
RAP3 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: CMC MATERIALS LLC |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
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17Q | First examination report despatched |
Effective date: 20240513 |