EP3262674A1 - Method for producing electrotechnical thin layers at room temperature, and electrotechnical thin layer - Google Patents
Method for producing electrotechnical thin layers at room temperature, and electrotechnical thin layerInfo
- Publication number
- EP3262674A1 EP3262674A1 EP16720700.0A EP16720700A EP3262674A1 EP 3262674 A1 EP3262674 A1 EP 3262674A1 EP 16720700 A EP16720700 A EP 16720700A EP 3262674 A1 EP3262674 A1 EP 3262674A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- layers
- acid
- layer
- thin film
- electrotechnical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 42
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims description 33
- 239000002253 acid Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 239000006185 dispersion Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 6
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- JWEXWLMRUGJTRQ-UHFFFAOYSA-N O.[Na].[Si] Chemical compound O.[Na].[Si] JWEXWLMRUGJTRQ-UHFFFAOYSA-N 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
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- 230000000996 additive effect Effects 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 4
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 claims description 4
- 229920001817 Agar Polymers 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 239000002671 adjuvant Substances 0.000 claims description 3
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- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 2
- 241000416162 Astragalus gummifer Species 0.000 claims description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
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- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
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- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 claims description 2
- 241000978776 Senegalia senegal Species 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229920001615 Tragacanth Polymers 0.000 claims description 2
- 235000010489 acacia gum Nutrition 0.000 claims description 2
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- 229920000615 alginic acid Polymers 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 239000001768 carboxy methyl cellulose Substances 0.000 claims description 2
- 235000010948 carboxy methyl cellulose Nutrition 0.000 claims description 2
- 239000008112 carboxymethyl-cellulose Substances 0.000 claims description 2
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- 229920001525 carrageenan Polymers 0.000 claims description 2
- 229940113118 carrageenan Drugs 0.000 claims description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 claims description 2
- 229940005991 chloric acid Drugs 0.000 claims description 2
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 claims description 2
- 229940077239 chlorous acid Drugs 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 239000008273 gelatin Substances 0.000 claims description 2
- 229920000159 gelatin Polymers 0.000 claims description 2
- 235000019322 gelatine Nutrition 0.000 claims description 2
- 235000011852 gelatine desserts Nutrition 0.000 claims description 2
- 150000004676 glycans Chemical class 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 2
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 claims description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- 239000011630 iodine Substances 0.000 claims description 2
- 125000005375 organosiloxane group Chemical group 0.000 claims description 2
- 235000010987 pectin Nutrition 0.000 claims description 2
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- -1 perborate Chemical compound 0.000 claims description 2
- 125000005385 peroxodisulfate group Chemical group 0.000 claims description 2
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 229920001184 polypeptide Polymers 0.000 claims description 2
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- 239000005017 polysaccharide Substances 0.000 claims description 2
- 102000004196 processed proteins & peptides Human genes 0.000 claims description 2
- 108090000765 processed proteins & peptides Proteins 0.000 claims description 2
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 235000010487 tragacanth Nutrition 0.000 claims description 2
- 239000000196 tragacanth Substances 0.000 claims description 2
- 229940116362 tragacanth Drugs 0.000 claims description 2
- 238000010947 wet-dispersion method Methods 0.000 claims description 2
- UHVMMEOXYDMDKI-JKYCWFKZSA-L zinc;1-(5-cyanopyridin-2-yl)-3-[(1s,2s)-2-(6-fluoro-2-hydroxy-3-propanoylphenyl)cyclopropyl]urea;diacetate Chemical compound [Zn+2].CC([O-])=O.CC([O-])=O.CCC(=O)C1=CC=C(F)C([C@H]2[C@H](C2)NC(=O)NC=2N=CC(=CC=2)C#N)=C1O UHVMMEOXYDMDKI-JKYCWFKZSA-L 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 1
- 238000004886 process control Methods 0.000 abstract description 5
- 229910001416 lithium ion Inorganic materials 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 78
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000011734 sodium Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
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- 238000001035 drying Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
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- 230000015556 catabolic process Effects 0.000 description 2
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- 238000004132 cross linking Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
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- 229920000642 polymer Polymers 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 235000002639 sodium chloride Nutrition 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000012855 volatile organic compound Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 1
- DKNPRRRKHAEUMW-UHFFFAOYSA-N Iodine aqueous Chemical compound [K+].I[I-]I DKNPRRRKHAEUMW-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000008272 agar Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000011244 liquid electrolyte Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
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- 239000011591 potassium Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/0029—Processes of manufacture
- H01G9/0036—Formation of the solid electrolyte layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
- H01G9/028—Organic semiconducting electrolytes, e.g. TCNQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02601—Nanoparticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Definitions
- the present invention can be generally arranged in the field of electrotechnical thin films.
- the applicant was already active in this area, as the applications DE 2012 107 100 A1 and WO 2014 019 560 A1 illustrate.
- the general, technical background and the known measures and methods are meaningfully reflected in the state of the art researched under these applications.
- DE 2 004 076 A1 or DE 31 06 654 A1 for small devices disclose combinations of PV modules with thermal generators, capacitors or accumulators.
- Screen printed CdS / CdTe solar cells have been known since 1980, for example, from the Japanese Journal of Applied Physics, Volume 19, Number 4, 'Screen printed thin film CdS / CdTe solar cell'.
- the present invention relates to methods for producing electrotechnical thin films and electrotechnical thin films according to the preamble of the independent claims.
- Generic thin films are known for example from DE 37 84 645 T2: A preceramic polymer is presented in dispersed form in organic solution, applied and cured by drying. However, a disadvantage of these layers is that the cured layer then has to be baked at 200 degrees Celsius to 400 degrees Celsius for about one day to obtain a ceramic layer having semiconductive and / or conductive properties. It turns out, however, that such ceramic layers can also be used as dielectric layers and doped, dielectric layers. However, this document provides PVD or CVD processes for additional electrode or cap layers, which disadvantageously require vacuum chambers and cause high equipment costs.
- WO 2011 021 982 A1 discloses a method for producing an electrode layer, in which carbon nanotubes in solution are exposed to metal clusters and then deposited on a membrane filter and dried. The deposited conglomerate of carbon nanotubes can then be removed as a thin layer.
- the disadvantage of this document then provides the combination with acidic polymer electrolyte, whereby a layer composite is obtained with partially liquid electrolyte.
- the charge-discharge curves of the corresponding catalyst show a significant decrease in the amount of energy that can be stored with each cycle, which speaks for electrochemical storage processes with side reactions.
- the reversibility of the electrochemical storage processes is not more than 90%, so that after a few charging cycles, the storable amount of energy already drops significantly.
- Object of the present invention was therefore to overcome the disadvantages of the prior art and to provide a method and a procedural, electrotechnical thin film, which despite industrial process control and large-scale fabrication can provide thin, stable, and in their electrotechnical Properties are nearly 100% reversible.
- a room temperature method for producing electrotechnical thin layers wherein electrically conductive and / or semiconducting, inorganic agglomerates are presented in a dispersion in a flat surface and cured to form a layer, characterized in that
- the curing is accelerated by applying at least one reagent.
- a procedural, electrotechnical thin film is characterized in that
- the thin film has a thickness of 5 to 50 microns
- the thin film has a resistance of 30 + - 15 ohms per square centimeter
- the thin film has an inorganic content of at least 80 weight percent, balance consisting of inorganic adjuvants and auxiliary substances and non-aromatic, polymeric additives. DESCRIPTION OF THE INVENTION AND ADVANTAGEOUS CHARACTERISTICS
- a 'room temperature method' denotes a process control at the usual ambient temperature.
- a temperature is around 20 degrees Celsius.
- temperatures of 10 degrees Celsius to 50 or 60 degrees Celsius are possible in factories.
- the decisive factor here is merely that the process can be carried out under such conditions without separate control of the room temperature.
- Electrotechnical thin films' in the context of the present invention Layers with a thickness in the micrometer range, ie from 0, 1 microns to several hundred micrometers. Conventional layer thicknesses in electrotechnical thin layers are often in the range of 5 to 50 micrometers, since such dimensions can be reliably set even with process controls controlled at relatively large intervals.
- Electrotechnical thin films are electrically conductive and / or semiconductive layers of the above-described thickness and can be used in a composite layer as a contact or as a functional layer. Pure ceramic thin films, however, would only be usable as an insulator. For possible uses of semiconducting and / or conducting layers, reference is made to the technical field and the documents and examples cited therein.
- a process is desired in which electrically conductive and / or semiconducting, inorganic agglomerates are presented in a planar manner in a dispersion and cured to form a layer.
- 'inorganic agglomerates' are particles which in their inorganic composition comprise carbon, at most in elemental form or in an inorganic compound comprising carbide, graphite, carbon black or oxide.
- the size of the agglomerates influences the thickness of the layer: If 0.5 micron large precipitates of a metal oxide in 2 to 3-fold layer sequence presented, a layer of 1, 5 microns thick with a uniformity of + - 0.5 microns is obtained.
- the curing is accelerated by applying at least one reagent.
- a reagent curing times can be significantly reduced and industrially necessary, short process steps can be achieved.
- the reagent actively intervenes in the curing process, in which solvent is bound and / or the crosslinking reaction at the contact points of the agglomerates with each other / to the subsequent substrate layer is accelerated.
- the process is preferably characterized in that the dispersion is initially introduced as an aqueous-moist to aqueous-wet dispersion. Water is always available as dispersing and solvent and readily available industrially. Compared with established organic solvents, it offers the advantage that it does not require any precautions in terms of toxicology.
- the method is characterized in that an acid halide is used as the reagent.
- an acid halide is used as the reagent.
- a slightly moist, basic dispersion of a metal phase was deposited on a carrier in a thin layer.
- the layer was purged with thionyl chloride, molecular formula SOCl 2 , also called sulfuric acid dichloride, under air suction. This produced sulfur dioxide gas and HCI gas under reaction with water.
- the liberated salt-acid gas reacted with existing hydroxides to corresponding chlorides.
- the entire layer solidified to form a white crust, which could subsequently be rinsed with distilled water.
- the layer thus obtained was homogeneous, continuous and stably crosslinked: the metallically flexible steel substrate could be bent and severely shaken without exfoliation.
- the inventors believe that the additional removal of moisture in combination with the formation of coarsely hygroscopic salts crosslinks the agglomerates at their contact points via oxygen bridges and with dehydration extremely accelerated.
- any compound can be considered which can remove combined solvents and at the same time support crosslinking at the contact points of the agglomerates.
- the process is preferably characterized in that as reagent at least one redox-active reagent selected from the group consisting of halogen, halogen-chalcogen compound, fluorine, chlorine, bromine, iodine, hypohalite, halite, halogenate, perhalogenate, light photons of UV Range, oxygen, oxygen enriched with ozone, ozone, perborate, percarbonate, peroxodisulfate, is used.
- redox-active reagent selected from the group consisting of halogen, halogen-chalcogen compound, fluorine, chlorine, bromine, iodine, hypohalite, halite, halogenate, perhalogenate, light photons of UV Range, oxygen, oxygen enriched with ozone, ozone, perborate, percarbonate, peroxodisulfate, is used.
- the method is characterized in that as reagent at least one acid or base active reagent selected from the group consisting of halo-hydrogen, hypohalite acid, haloic acid, haloacid, per-haloacid, hypochlorous acid, chlorous acid, chloric acid, perchloric acid, dry CO 2, dry NH 3, thionyl chloride , Sulfuryl chloride, phosphorus oxychloride, phosphorus trichloride.
- at least one acid or base active reagent selected from the group consisting of halo-hydrogen, hypohalite acid, haloic acid, haloacid, per-haloacid, hypochlorous acid, chlorous acid, chloric acid, perchloric acid, dry CO 2, dry NH 3, thionyl chloride , Sulfuryl chloride, phosphorus oxychloride, phosphorus trichloride.
- the process is preferably characterized in that the curing is assisted by at least one polymerizable additive, the polymerizable additive selected from the group consisting of swellable polysaccharide, agar-agar, carrageenan, tragacanth, gum arabic, alginates, pectin, swellable polypeptide, gelatin, Carboxymethylcellulose, hydroxyethylcellulose, polyacrylic, polycarboxylic acids, polyethers, polyamides, polyimides, silicon-organic compound having a methacrylic acid-based polymerizable side group, organosiloxane, silicone polyethers.
- the polymerizable additive selected from the group consisting of swellable polysaccharide, agar-agar, carrageenan, tragacanth, gum arabic, alginates, pectin, swellable polypeptide, gelatin, Carboxymethylcellulose, hydroxyethylcellulose, polyacrylic, polycarboxylic acids, poly
- the method is characterized in that the electrotechnical thin film is modified in the incompletely cured state with at least one of the aforementioned reagents edge.
- the treatment of a layer containing metallic parts with sulfuryl chloride resulted in the formation of traces of chlorine. These oxidized an incompletely cured layer at the edge and gave this layer semiconductor properties.
- the inventors assume that by targeted use of suitable oxidation reagents, reduction reagents and / or solids forming reagents edge layers in their valence and / or in their structure defects can be adjusted so that the layers in the same direction to the disclosure DE 37 84 645 T2 set versatile and as effective semiconductor combinations, such as PV layer sequences and / or regulating transistors can be formed.
- the high voltage behavior of the present embodiment indicates that such layer modifications are possible and accessible with the presently disclosed method.
- the present invention also discloses PV layer sequences and electrical control circuits, which can be obtained based on the claimed method.
- the thin film has a thickness of 0.1 to several hundreds of microns, - the thin film has a maximum resistance of 30 + - 15 ohms per square centimeter,
- the thin film has an inorganic content of at least 80 weight percent, balance consisting of inorganic adjuvants and non-aromatic, polymeric additives.
- the electrotechnical thin layer is characterized in that the thin layer is combined with further thin layers according to the method, preferably arranged as a dielectric deposited between two planar electrodes.
- Fig. 1 advantageous embodiment of a multi-layer sequence, which can serve as a capacitive power storage.
- FIG. 2 advantageous embodiment of FIG. 1 in an isometric view.
- an electrotechnical thin-film layer is arranged in a sequence of a plurality of electrode, dielectric and electrode substrate layers, wherein at least the dielectric layers and / or the electrode substrate layers are arranged. Layers were deposited according to the method, wherein
- Anodensubstrat layers of hardened sodium-silicon-water glass layers consist of graphite particles
- - Cathode substrate layers consist of cured sodium-silicon-water glass layers with titanium oxide particles
- Dielectric layers of hardened layers of gelling agent with polyiodide content and / or iodine content exist,
- the sequence of layers is reversibly usable as a capacitive, physicochemical current storage with charging voltages of up to 12 volts,
- the sequence of layers has an energy density of at least 100, preferably 200 to 600, Wh per kilogram,
- each layer has a resistance of at most 25 + - 5 ohms per square centimeter
- the contacts of the electrode layers have contacts arranged laterally cantilevered out of the layer sequence
- the up / down converter has a control circuit for keeping constant an output voltage
- the up / down converter has a connection for an external consumer with a constant regulated output voltage.
- a replacement for a lithium / polymer accumulator could preferably be produced using the presently disclosed method - preferably usable in a tablet PC: on a film carrier of 3 ⁇ 3 centimeters, a suitable, metallically conductive electrode is firstly used for this purpose. preferably in the form of an aqueous dispersion of "conductive silver” or "aluminum conductive paste” - applied and cured. Thereafter, a layer of an aqueous Si / SiO 2 / Na 2 O (sodium silicate-waterglass) is applied with additional graphite particles as conductive agglomerates.
- Si / SiO 2 / Na 2 O sodium silicate-waterglass
- An acid reacting, drying reagent accelerates the curing and it is obtained under a minute reaction time, a cured anode substrate.
- the layer is kept as thin as possible (0.1 microns to 15 microns) in order not to exceed the internal resistance of about 30Ohm per cm 2 ;
- graphite particles of not more than 0.5 micrometers in combination with silicon agglomerates of not more than 1 to 2 micrometers are dispersed basic dissolving, by Dipping, spraying, flooding, spinning or printing applied evenly in two- to three-layer package and cured suddenly under exposure to acid and / or oxidative reagent as a continuous layer.
- active dielectric now a fresh dispersion of gelling agent - preferably E406 - water and potassium polyiodide solution - preferably iodine-potassium iodide or Povodinjod - applied surface, to form water-binding agglomerates (0.1 ⁇ to 15 ⁇ are at reaction times of 30 seconds to several Minutes accessible) and finally cured. Thereafter, a cathode substrate made of a mixture of Si / SiO 2 / Na 2 O (sodium silicate-waterglass) and SiO 2 is applied as an aqueous dispersion in the manner described above and cured. Finally, another electrode is applied as described above.
- gelling agent - preferably E406 - water and potassium polyiodide solution - preferably iodine-potassium iodide or Povodinjod - applied surface, to form water-binding agglomerates (0.1 ⁇ to 15 ⁇ are at reaction times of 30 seconds to several Minutes accessible) and
- a 'stack' By repeated repetition of the above-described steps, a sequence of dielectric layers, can be obtained, wherein the individual electrodes can be contacted via outwardly guided, wide contact bands.
- a capacity variability is easy to achieve in this sandwich structure and the short manufacturing times allow multiple repetitions within a few minutes.
- the electrode layers are repeatedly coated in each case in the reverse order of the pre-layers and can thus fulfill a dual function, whereby electrode material can be saved.
- Figure 1 illustrates a design of such an accessible embodiment.
- the high-performance capacity memory thus created is interconnected with an up / down converter. This connects depending on the necessary and available power different electrodes of the stack with a consumer. In the present case, a supply voltage of 3.7 volts had to be provided for initial tests. With the help of the up / down converter, a constant output power was achieved until complete discharge (design see Figure 2).
- the inventors assume purely physico-chemical energy storage, which does not change the dielectric and must be over 99.99% reversible. With layer thicknesses of preferably 0.1 to 15 micrometers, the measured values calculate an energy density of 200 to 600 Wh per kilogram. Energy densities of at least 100 Wh per kilogram are thus safe and even at rough process control of a synthesis process possible. Overloading tests showed a high level of security of the layer sequence thus produced: beyond the 12 volt, the dielectric layer showed a breakdown typical of diodes: a short circuit occurred.
- the present method for the first time proposes a process for the production of an electrotechnical thin layer in which a process control at room temperature provides stable, thin layers in a very short time by using an additional reagent.
- Capacitive storage which could replace a Li-ion battery in a tablet PC and more far-reaching applications are thus accessible even in rough, industrial litigation.
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- Inks, Pencil-Leads, Or Crayons (AREA)
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Abstract
Description
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DE102015102801 | 2015-02-26 | ||
PCT/DE2016/100086 WO2016134706A1 (en) | 2015-02-26 | 2016-02-26 | Method for producing electrotechnical thin layers at room temperature, and electrotechnical thin layer |
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US (1) | US10892160B2 (en) |
EP (1) | EP3262674A1 (en) |
JP (2) | JP2018512267A (en) |
CN (1) | CN107896511B (en) |
CA (1) | CA2977863C (en) |
DE (2) | DE102016103432A1 (en) |
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WO2016134704A1 (en) | 2015-02-26 | 2016-09-01 | Dynamic Solar Systems Ag | Obtaining a pv film structure by means of a room temperature method and room temperature method for producing a pv film structure |
DE202017001454U1 (en) | 2017-03-19 | 2017-06-22 | Dynamic Solar Systems Ag | Regulated, printed heating |
DE102017002623A1 (en) | 2017-03-20 | 2018-09-20 | Reinhold Gregarek | Improved tribostatic I-I-P process, tribostatic powder nozzle and use for the production of electro-technical multilayer composites |
DE202017002209U1 (en) | 2017-04-27 | 2017-06-21 | Dynamic Solar Systems Ag | Printed electrode with arrangeable LED components |
DE202017002725U1 (en) | 2017-05-23 | 2017-06-13 | Dynamic Solar Systems Ag | Heating panel with printed heating |
CN109935469A (en) * | 2017-12-15 | 2019-06-25 | 钰邦科技股份有限公司 | Printed form conduction composite mortar, capacitor and its manufacturing method |
DE102020003811A1 (en) | 2020-06-25 | 2021-12-30 | Dynamic Solar Systems Ag | Underfloor heating system with an improved layer structure |
RU2762374C1 (en) * | 2021-04-29 | 2021-12-20 | Общество с ограниченной ответственностью «Научное предприятие Монокристалл Пасты» | Method for forming a current-collecting contact on the surface of solar cells with a heterojunction |
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DE112016000930A5 (en) | 2017-11-02 |
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CA2977863A1 (en) | 2016-09-01 |
WO2016134706A1 (en) | 2016-09-01 |
JP2018512267A (en) | 2018-05-17 |
CN107896511B (en) | 2022-02-18 |
CN107896511A (en) | 2018-04-10 |
US10892160B2 (en) | 2021-01-12 |
CA2977863C (en) | 2023-09-19 |
JP2021192907A (en) | 2021-12-23 |
RU2720133C2 (en) | 2020-04-24 |
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RU2017131152A3 (en) | 2019-06-11 |
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