EP2688115A4 - Boîtier de semi-conducteur optique, module de semi-conducteurs optiques, et procédés de fabrication de ceux-ci - Google Patents

Boîtier de semi-conducteur optique, module de semi-conducteurs optiques, et procédés de fabrication de ceux-ci

Info

Publication number
EP2688115A4
EP2688115A4 EP11860925.4A EP11860925A EP2688115A4 EP 2688115 A4 EP2688115 A4 EP 2688115A4 EP 11860925 A EP11860925 A EP 11860925A EP 2688115 A4 EP2688115 A4 EP 2688115A4
Authority
EP
European Patent Office
Prior art keywords
optical semiconductor
manufacturing
semiconductor package
semiconductor module
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP11860925.4A
Other languages
German (de)
English (en)
Other versions
EP2688115B1 (fr
EP2688115A1 (fr
Inventor
Satoshi Hirono
Manabu Ikoma
Naoto Inoue
Tsuyoshi Miyata
Kazunari Komai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Corp
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corp, Omron Tateisi Electronics Co filed Critical Omron Corp
Publication of EP2688115A1 publication Critical patent/EP2688115A1/fr
Publication of EP2688115A4 publication Critical patent/EP2688115A4/fr
Application granted granted Critical
Publication of EP2688115B1 publication Critical patent/EP2688115B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
EP11860925.4A 2011-03-15 2011-03-22 Boîtier de semi-conducteur optique, module de semi-conducteurs optiques, et procédés de fabrication de ceux-ci Active EP2688115B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011056827A JP4962635B1 (ja) 2011-03-15 2011-03-15 光半導体パッケージおよび光半導体モジュールならびにこれらの製造方法
PCT/JP2011/056783 WO2012124147A1 (fr) 2011-03-15 2011-03-22 Boîtier de semi-conducteur optique, module de semi-conducteurs optiques, et procédés de fabrication de ceux-ci

Publications (3)

Publication Number Publication Date
EP2688115A1 EP2688115A1 (fr) 2014-01-22
EP2688115A4 true EP2688115A4 (fr) 2014-11-12
EP2688115B1 EP2688115B1 (fr) 2019-06-12

Family

ID=46506068

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11860925.4A Active EP2688115B1 (fr) 2011-03-15 2011-03-22 Boîtier de semi-conducteur optique, module de semi-conducteurs optiques, et procédés de fabrication de ceux-ci

Country Status (5)

Country Link
US (1) US9006750B2 (fr)
EP (1) EP2688115B1 (fr)
JP (1) JP4962635B1 (fr)
CN (1) CN103430338B (fr)
WO (1) WO2012124147A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9568169B2 (en) 2013-01-31 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Electronic circuit device and method for manufacturing electronic circuit device
EP2866065A1 (fr) * 2013-10-22 2015-04-29 CCS Technology, Inc. Fibre optique multinoyau
CN105684174B (zh) * 2013-11-07 2018-10-09 亮锐控股有限公司 用于led的具有包围led的全内反射层的衬底
JP6472596B2 (ja) * 2014-02-13 2019-02-20 日亜化学工業株式会社 発光装置及びその製造方法
JP2017168469A (ja) * 2014-08-04 2017-09-21 パナソニックＩｐマネジメント株式会社 発光装置の製造方法、発光装置、および発光装置の製造装置
JP6492587B2 (ja) * 2014-11-29 2019-04-03 日亜化学工業株式会社 発光装置
US9696199B2 (en) * 2015-02-13 2017-07-04 Taiwan Biophotonic Corporation Optical sensor
JP6828288B2 (ja) * 2016-06-30 2021-02-10 三菱電機株式会社 発光装置
JP6443429B2 (ja) * 2016-11-30 2018-12-26 日亜化学工業株式会社 パッケージ及びパッケージの製造方法、発光装置及び発光装置の製造方法
FR3062546B1 (fr) * 2017-02-01 2021-09-10 Inst Vedecom Structure de diffraction integree dans une carte de circuit imprime et procede de fabrication de celle-ci
JP2018152402A (ja) * 2017-03-10 2018-09-27 シチズン電子株式会社 発光装置
US11280990B2 (en) * 2018-02-26 2022-03-22 Caliber Imaging & Diagnostics, Inc. System and method for macroscopic and microscopic imaging ex-vivo tissue
US20200075816A1 (en) * 2018-08-30 2020-03-05 Oregon State University Micro-led apparatus with enhanced illumination, and method for forming such
JP7283489B2 (ja) * 2021-01-20 2023-05-30 三菱電機株式会社 発光装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2109158A1 (fr) * 2008-04-08 2009-10-14 Ushiodenki Kabushiki Kaisha Dispositif de source lumineuse à DEL
US20100295079A1 (en) * 2009-05-19 2010-11-25 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion
JP2011042732A (ja) * 2009-08-20 2011-03-03 Kaneka Corp Ｌｅｄ封止剤

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0672263U (ja) * 1993-03-23 1994-10-07 ローム株式会社 Ｌｅｄランプ
JP3552791B2 (ja) * 1995-06-13 2004-08-11 松下電器産業株式会社 電子部品実装方法及び装置
JP2000269551A (ja) * 1999-03-18 2000-09-29 Rohm Co Ltd チップ型発光装置
JP4125848B2 (ja) * 1999-12-17 2008-07-30 ローム株式会社 ケース付チップ型発光装置
JP2002261333A (ja) * 2001-03-05 2002-09-13 Toyoda Gosei Co Ltd 発光装置
JP2004200207A (ja) * 2002-12-16 2004-07-15 Matsushita Electric Works Ltd 発光装置
JP2006066657A (ja) * 2004-08-27 2006-03-09 Kyocera Corp 発光装置および照明装置
JP5149483B2 (ja) * 2005-03-28 2013-02-20 パナソニック株式会社 発光素子装置とその製造方法
JP2006278675A (ja) 2005-03-29 2006-10-12 Toshiba Corp 半導体発光装置
JP2007258776A (ja) * 2006-03-20 2007-10-04 Kyocera Corp 高周波モジュール
JP4830768B2 (ja) * 2006-05-10 2011-12-07 日亜化学工業株式会社 半導体発光装置及び半導体発光装置の製造方法
JP2008300554A (ja) * 2007-05-30 2008-12-11 Nec Electronics Corp 半導体装置
JP4525804B2 (ja) * 2007-11-16 2010-08-18 オムロン株式会社 光半導体パッケージおよびこれを備えた光電センサ
CN102006964B (zh) * 2008-03-21 2016-05-25 Imra美国公司 基于激光的材料加工方法和***
JP2010108952A (ja) * 2008-10-28 2010-05-13 Kyocera Corp 発光装置及びこれを用いた照明装置
JP2010128111A (ja) * 2008-11-26 2010-06-10 Furukawa Electric Co Ltd:The 低損失光ファイバ、光ファイバアレイ、コネクタ構造および低損失光ファイバの作製方法
JP5465452B2 (ja) 2009-03-26 2014-04-09 株式会社キーエンス 光ファイバ型光電センサの本体ユニット及び光ファイバ型光電センサ
JP2011023621A (ja) * 2009-07-17 2011-02-03 Sharp Corp 発光装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2109158A1 (fr) * 2008-04-08 2009-10-14 Ushiodenki Kabushiki Kaisha Dispositif de source lumineuse à DEL
US20100295079A1 (en) * 2009-05-19 2010-11-25 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion
JP2011042732A (ja) * 2009-08-20 2011-03-03 Kaneka Corp Ｌｅｄ封止剤

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
See also references of WO2012124147A1 *
YA CHENG ET AL: "Three-dimensional micro-optical components embedded in photosensitive glass by a femtosecond laser", OPTICS LETTERS, vol. 28, no. 13, 1 July 2003 (2003-07-01), pages 1144, XP055144549, ISSN: 0146-9592, DOI: 10.1364/OL.28.001144 *

Also Published As

Publication number Publication date
JP4962635B1 (ja) 2012-06-27
EP2688115B1 (fr) 2019-06-12
CN103430338B (zh) 2016-02-24
EP2688115A1 (fr) 2014-01-22
WO2012124147A1 (fr) 2012-09-20
CN103430338A (zh) 2013-12-04
US9006750B2 (en) 2015-04-14
US20140042478A1 (en) 2014-02-13
JP2012195371A (ja) 2012-10-11

Similar Documents

Publication Publication Date Title
EP2688115A4 (fr) Boîtier de semi-conducteur optique, module de semi-conducteurs optiques, et procédés de fabrication de ceux-ci
EP2682985A4 (fr) Module semi-conducteur et procédé de fabrication de module semi-conducteur
TWI563695B (en) Method for manufacturing optical semiconductor device
EP2835836A4 (fr) Substrat optique, élément électroluminescent à semi-conducteur et procédé de fabrication d'un élément électroluminescent à semi-conducteur
EP2908353A4 (fr) Substrat optique, élément électroluminescent à semi-conducteur et leur procédé de fabrication
TWI562295B (en) Semiconductor package and method for fabricating base for semiconductor package
TWI562325B (en) Methods of fabricating semiconductor stack packages
EP2940739A4 (fr) Puce optoélectronique intégrée hybride à base de silice sur silicium et son procédé de fabrication
EP2741336A4 (fr) Dispositif à semi-conducteur et son procédé de fabrication
EP2725609A4 (fr) Module à semi-conducteurs
EP2797112A4 (fr) Module semi-conducteur
EP2704221A4 (fr) Dispositif semi-conducteur à lentille et son procédé de fabrication
EP2768018A4 (fr) Refroidisseur pour module à semiconducteur, et module à semiconducteur
EP2735899A4 (fr) Module à éléments optiques, module de transmission optique et procédé de fabrication d'un module de transmission optique
EP2704191A4 (fr) Refroidisseur pour module à semi-conducteur, et module à semi-conducteur
EP2750184A4 (fr) Module semi-conducteur
TWI562366B (en) Manufacturing method of semiconductor device
SG2014005805A (en) Opto-electronic module and method for manufacturing the same
EP2936558A4 (fr) Boîtier de semi-conducteur et procédé de fabrication de base de boîtier de semi-conducteur
EP2541594A4 (fr) Procédé de fabrication de module à semi-conducteur, module à semi-conducteur, et dispositif de fabrication
IL239638A0 (en) Method and system for determining one or more optical properties of a semiconductor bulk structure
EP2624286A4 (fr) Procédé de fabrication d'un dispositif semi-conducteur
EP2584621A4 (fr) Grille de connexion pour dispositif à semi-conducteurs optique, procédé pour fabriquer une grille de connexion pour dispositif à semi-conducteurs optique, et dispositif à semi-conducteurs optique.
EP2688100A4 (fr) Module semiconducteur et procédé de fabrication de celui-ci
EP2858109A4 (fr) Module semi-conducteur et procédé de fabrication d'un module semi-conducteur

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20131004

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20141013

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/00 20100101ALI20141007BHEP

Ipc: H01L 33/54 20100101AFI20141007BHEP

Ipc: H01L 31/0203 20140101ALI20141007BHEP

Ipc: H01L 33/60 20100101ALN20141007BHEP

Ipc: H01L 31/0232 20140101ALN20141007BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20170224

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/54 20100101AFI20181212BHEP

Ipc: H01L 31/0232 20140101ALN20181212BHEP

Ipc: H01L 33/00 20100101ALI20181212BHEP

Ipc: H01L 31/0203 20140101ALI20181212BHEP

Ipc: H01L 33/60 20100101ALN20181212BHEP

INTG Intention to grant announced

Effective date: 20190108

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAJ Information related to disapproval of communication of intention to grant by the applicant or resumption of examination proceedings by the epo deleted

Free format text: ORIGINAL CODE: EPIDOSDIGR1

GRAL Information related to payment of fee for publishing/printing deleted

Free format text: ORIGINAL CODE: EPIDOSDIGR3

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 602011059756

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01L0033600000

Ipc: H01L0033540000

GRAR Information related to intention to grant a patent recorded

Free format text: ORIGINAL CODE: EPIDOSNIGR71

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

INTC Intention to grant announced (deleted)
AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

INTG Intention to grant announced

Effective date: 20190507

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/60 20100101ALN20190506BHEP

Ipc: H01L 33/00 20100101ALI20190506BHEP

Ipc: H01L 31/0232 20140101ALN20190506BHEP

Ipc: H01L 31/0203 20140101ALI20190506BHEP

Ipc: H01L 33/54 20100101AFI20190506BHEP

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1143741

Country of ref document: AT

Kind code of ref document: T

Effective date: 20190615

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602011059756

Country of ref document: DE

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20190612

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190912

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190913

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190912

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1143741

Country of ref document: AT

Kind code of ref document: T

Effective date: 20190612

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191014

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20191012

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602011059756

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

26N No opposition filed

Effective date: 20200313

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200224

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

PG2D Information on lapse in contracting state deleted

Ref country code: IS

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20200331

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200322

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200331

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200331

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200331

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200322

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200331

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20200322

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200322

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190612

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20230131

Year of fee payment: 13