EP1929545A4 - Lichtemittierendes halbleiterbauelement und verfahren zu seiner herstellung - Google Patents

Lichtemittierendes halbleiterbauelement und verfahren zu seiner herstellung

Info

Publication number
EP1929545A4
EP1929545A4 EP06791170.1A EP06791170A EP1929545A4 EP 1929545 A4 EP1929545 A4 EP 1929545A4 EP 06791170 A EP06791170 A EP 06791170A EP 1929545 A4 EP1929545 A4 EP 1929545A4
Authority
EP
European Patent Office
Prior art keywords
emitting device
semiconductor light
making same
making
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06791170.1A
Other languages
English (en)
French (fr)
Other versions
EP1929545A1 (de
Inventor
Fengyi Jiang
Li Wang
Wenqing Fang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lattice Power Jiangxi Corp
Original Assignee
Lattice Power Jiangxi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Power Jiangxi Corp filed Critical Lattice Power Jiangxi Corp
Publication of EP1929545A1 publication Critical patent/EP1929545A1/de
Publication of EP1929545A4 publication Critical patent/EP1929545A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
EP06791170.1A 2005-09-30 2006-09-29 Lichtemittierendes halbleiterbauelement und verfahren zu seiner herstellung Withdrawn EP1929545A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNB2005100303217A CN100388515C (zh) 2005-09-30 2005-09-30 半导体发光器件及其制造方法
PCT/CN2006/002584 WO2007036164A1 (en) 2005-09-30 2006-09-29 Semiconductor light-emitting device and method for making same

Publications (2)

Publication Number Publication Date
EP1929545A1 EP1929545A1 (de) 2008-06-11
EP1929545A4 true EP1929545A4 (de) 2014-03-05

Family

ID=36751610

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06791170.1A Withdrawn EP1929545A4 (de) 2005-09-30 2006-09-29 Lichtemittierendes halbleiterbauelement und verfahren zu seiner herstellung

Country Status (5)

Country Link
EP (1) EP1929545A4 (de)
JP (1) JP2009510730A (de)
KR (1) KR20080049724A (de)
CN (1) CN100388515C (de)
WO (1) WO2007036164A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007207869A (ja) * 2006-01-31 2007-08-16 Rohm Co Ltd 窒化物半導体発光素子
DE102007046519A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Dünnfilm-LED mit einer Spiegelschicht und Verfahren zu deren Herstellung
WO2009117845A1 (en) * 2008-03-25 2009-10-01 Lattice Power (Jiangxi) Corporation Semiconductor light-emitting device with double-sided passivation
CN102037575B (zh) * 2008-03-27 2013-04-10 宋俊午 发光元件及其制造方法
WO2009128669A2 (ko) * 2008-04-16 2009-10-22 엘지이노텍주식회사 발광 소자 및 그 제조방법
JP4583487B2 (ja) 2009-02-10 2010-11-17 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
JP4871967B2 (ja) 2009-02-10 2012-02-08 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
KR100999726B1 (ko) 2009-05-04 2010-12-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101154750B1 (ko) * 2009-09-10 2012-06-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100986407B1 (ko) * 2009-10-22 2010-10-08 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101007077B1 (ko) * 2009-11-06 2011-01-10 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 그 제조방법
JP5733594B2 (ja) * 2010-02-18 2015-06-10 スタンレー電気株式会社 半導体発光装置
KR101014071B1 (ko) * 2010-04-15 2011-02-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
KR101039609B1 (ko) * 2010-05-24 2011-06-09 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
US8502244B2 (en) * 2010-08-31 2013-08-06 Micron Technology, Inc. Solid state lighting devices with current routing and associated methods of manufacturing
CN101997070A (zh) * 2010-09-10 2011-03-30 北京工业大学 一种高反射低电压的倒装发光二极管及其制备方法
JP2012253304A (ja) * 2011-06-07 2012-12-20 Toshiba Corp 窒化物半導体発光素子の製造方法
JP2013026451A (ja) 2011-07-21 2013-02-04 Stanley Electric Co Ltd 半導体発光素子
WO2013068878A1 (en) * 2011-11-07 2013-05-16 Koninklijke Philips Electronics N.V. Improved p-contact with more uniform injection and lower optical loss
KR101220419B1 (ko) * 2012-04-27 2013-01-21 한국광기술원 수직 구조 발광 다이오드
JP6185786B2 (ja) * 2012-11-29 2017-08-23 スタンレー電気株式会社 発光素子
JP6190591B2 (ja) * 2013-01-15 2017-08-30 スタンレー電気株式会社 半導体発光素子
CN103456864B (zh) * 2013-08-29 2016-01-27 刘晶 一种发光二极管芯片的制作方法、芯片及发光二极管
CN110993756B (zh) * 2019-12-18 2022-12-06 东莞市中晶半导体科技有限公司 Led芯片及其制作方法
WO2024043316A1 (ja) * 2022-08-25 2024-02-29 国立大学法人京都大学 ２次元フォトニック結晶レーザ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10200163A (ja) * 1997-01-10 1998-07-31 Sanken Electric Co Ltd 半導体発光素子
JP2001244503A (ja) * 1999-12-21 2001-09-07 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2004172217A (ja) * 2002-11-18 2004-06-17 Matsushita Electric Works Ltd 半導体発光素子
JP2005123526A (ja) * 2003-10-20 2005-05-12 Oki Data Corp 半導体装置、ｌｅｄヘッド、及び画像形成装置
US20050184300A1 (en) * 2004-02-25 2005-08-25 Mikio Tazima Light-emitting semiconductor device and method of fabrication

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57149781A (en) * 1981-03-11 1982-09-16 Fujitsu Ltd Semiconductor luminous device
JPS58140171A (ja) * 1982-02-15 1983-08-19 Nec Corp 発光ダイオ−ド
JP2792781B2 (ja) * 1992-03-03 1998-09-03 シャープ株式会社 発光ダイオード及びその製造方法
JPH0697498A (ja) * 1992-09-17 1994-04-08 Toshiba Corp 半導体発光素子
JPH07254731A (ja) * 1994-03-15 1995-10-03 Hitachi Cable Ltd 発光素子
JPH07273368A (ja) * 1994-03-29 1995-10-20 Nec Kansai Ltd 発光ダイオード
JP3511213B2 (ja) * 1994-03-30 2004-03-29 スタンレー電気株式会社 光半導体デバイス
JPH08335717A (ja) * 1995-06-06 1996-12-17 Rohm Co Ltd 半導体発光素子
JP3595097B2 (ja) * 1996-02-26 2004-12-02 株式会社東芝 半導体装置
JP3239061B2 (ja) * 1996-02-29 2001-12-17 シャープ株式会社 発光ダイオード及びその製造方法
US6492661B1 (en) * 1999-11-04 2002-12-10 Fen-Ren Chien Light emitting semiconductor device having reflection layer structure
CN100334745C (zh) * 1999-11-05 2007-08-29 洲磊科技股份有限公司 发光半导体装置及其制作方法
JP4159865B2 (ja) * 2002-12-11 2008-10-01 シャープ株式会社 窒化物系化合物半導体発光素子の製造方法
KR100452751B1 (ko) * 2003-06-03 2004-10-15 삼성전기주식회사 그물망 전극이 적용된 ⅲ-질화물 반도체 발광소자
JP2005116794A (ja) * 2003-10-08 2005-04-28 Mitsubishi Cable Ind Ltd 窒化物半導体発光素子
KR20050051920A (ko) * 2003-11-28 2005-06-02 삼성전자주식회사 플립칩형 질화물계 발광소자 및 그 제조방법
CN1641893A (zh) * 2004-01-02 2005-07-20 炬鑫科技股份有限公司 一种氮化镓系发光二极管结构及其制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10200163A (ja) * 1997-01-10 1998-07-31 Sanken Electric Co Ltd 半導体発光素子
JP2001244503A (ja) * 1999-12-21 2001-09-07 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2004172217A (ja) * 2002-11-18 2004-06-17 Matsushita Electric Works Ltd 半導体発光素子
JP2005123526A (ja) * 2003-10-20 2005-05-12 Oki Data Corp 半導体装置、ｌｅｄヘッド、及び画像形成装置
US20050184300A1 (en) * 2004-02-25 2005-08-25 Mikio Tazima Light-emitting semiconductor device and method of fabrication

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2007036164A1 *

Also Published As

Publication number Publication date
KR20080049724A (ko) 2008-06-04
JP2009510730A (ja) 2009-03-12
CN1770486A (zh) 2006-05-10
CN100388515C (zh) 2008-05-14
WO2007036164A8 (en) 2007-07-19
EP1929545A1 (de) 2008-06-11
WO2007036164A1 (en) 2007-04-05

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