CN1770486A - 半导体发光器件及其制造方法 - Google Patents
半导体发光器件及其制造方法 Download PDFInfo
- Publication number
- CN1770486A CN1770486A CNA2005100303217A CN200510030321A CN1770486A CN 1770486 A CN1770486 A CN 1770486A CN A2005100303217 A CNA2005100303217 A CN A2005100303217A CN 200510030321 A CN200510030321 A CN 200510030321A CN 1770486 A CN1770486 A CN 1770486A
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- Prior art keywords
- layer
- metal layer
- laminated
- semiconductor
- ohmic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 150
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims description 103
- 239000002184 metal Substances 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 79
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000011810 insulating material Substances 0.000 claims description 9
- 238000012856 packing Methods 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- 238000002310 reflectometry Methods 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 description 38
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 38
- 238000009413 insulation Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052738 indium Inorganic materials 0.000 description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 241000209094 Oryza Species 0.000 description 9
- 235000007164 Oryza sativa Nutrition 0.000 description 9
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 235000009566 rice Nutrition 0.000 description 9
- 238000001259 photo etching Methods 0.000 description 7
- 238000002156 mixing Methods 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- URRHWTYOQNLUKY-UHFFFAOYSA-N [AlH3].[P] Chemical compound [AlH3].[P] URRHWTYOQNLUKY-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (12)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100303217A CN100388515C (zh) | 2005-09-30 | 2005-09-30 | 半导体发光器件及其制造方法 |
PCT/CN2006/002584 WO2007036164A1 (en) | 2005-09-30 | 2006-09-29 | Semiconductor light-emitting device and method for making same |
JP2008532572A JP2009510730A (ja) | 2005-09-30 | 2006-09-29 | 半導体発光デバイスおよびその製造方法 |
EP06791170.1A EP1929545A4 (en) | 2005-09-30 | 2006-09-29 | SEMICONDUCTOR ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME |
KR1020087005001A KR20080049724A (ko) | 2005-09-30 | 2006-09-29 | 반도체 발광 장치 및 이의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100303217A CN100388515C (zh) | 2005-09-30 | 2005-09-30 | 半导体发光器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1770486A true CN1770486A (zh) | 2006-05-10 |
CN100388515C CN100388515C (zh) | 2008-05-14 |
Family
ID=36751610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100303217A Active CN100388515C (zh) | 2005-09-30 | 2005-09-30 | 半导体发光器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1929545A4 (zh) |
JP (1) | JP2009510730A (zh) |
KR (1) | KR20080049724A (zh) |
CN (1) | CN100388515C (zh) |
WO (1) | WO2007036164A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101997070A (zh) * | 2010-09-10 | 2011-03-30 | 北京工业大学 | 一种高反射低电压的倒装发光二极管及其制备方法 |
CN102024895A (zh) * | 2009-09-10 | 2011-04-20 | Lg伊诺特有限公司 | 发光器件、***和封装 |
CN102097565A (zh) * | 2009-11-06 | 2011-06-15 | Lg伊诺特有限公司 | 发光器件、发光器件封装以及照明*** |
CN102222744A (zh) * | 2010-04-15 | 2011-10-19 | Lg伊诺特有限公司 | 发光器件及其制造方法、发光器件封装以及照明*** |
CN102017193B (zh) * | 2008-03-25 | 2012-05-30 | 晶能光电(江西)有限公司 | 具有双面钝化的半导体发光器件 |
CN103456864A (zh) * | 2013-08-29 | 2013-12-18 | 刘晶 | 一种发光二极管芯片的制作方法、芯片及发光二极管 |
CN101809771B (zh) * | 2007-09-28 | 2014-05-07 | 欧司朗光电半导体有限公司 | 具有镜层的薄膜发光二极管及其制造方法 |
CN110993756A (zh) * | 2019-12-18 | 2020-04-10 | 东莞市中晶半导体科技有限公司 | Led芯片及其制作方法 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007207869A (ja) * | 2006-01-31 | 2007-08-16 | Rohm Co Ltd | 窒化物半導体発光素子 |
WO2009120044A2 (ko) * | 2008-03-27 | 2009-10-01 | Song June O | 발광소자 및 그 제조방법 |
EP2280426B1 (en) * | 2008-04-16 | 2017-07-05 | LG Innotek Co., Ltd. | Light-emitting device |
JP4871967B2 (ja) | 2009-02-10 | 2012-02-08 | Dowaエレクトロニクス株式会社 | 半導体発光素子およびその製造方法 |
JP4583487B2 (ja) | 2009-02-10 | 2010-11-17 | Dowaエレクトロニクス株式会社 | 半導体発光素子およびその製造方法 |
KR100999726B1 (ko) | 2009-05-04 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
KR100986407B1 (ko) * | 2009-10-22 | 2010-10-08 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
JP5733594B2 (ja) * | 2010-02-18 | 2015-06-10 | スタンレー電気株式会社 | 半導体発光装置 |
KR101039609B1 (ko) * | 2010-05-24 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지 |
US8502244B2 (en) * | 2010-08-31 | 2013-08-06 | Micron Technology, Inc. | Solid state lighting devices with current routing and associated methods of manufacturing |
JP2012253304A (ja) * | 2011-06-07 | 2012-12-20 | Toshiba Corp | 窒化物半導体発光素子の製造方法 |
JP2013026451A (ja) | 2011-07-21 | 2013-02-04 | Stanley Electric Co Ltd | 半導体発光素子 |
US9312437B2 (en) * | 2011-11-07 | 2016-04-12 | Koninklijke Philips N.V. | P-contact with more uniform injection and lower optical loss |
KR101220419B1 (ko) * | 2012-04-27 | 2013-01-21 | 한국광기술원 | 수직 구조 발광 다이오드 |
JP6185786B2 (ja) * | 2012-11-29 | 2017-08-23 | スタンレー電気株式会社 | 発光素子 |
JP6190591B2 (ja) * | 2013-01-15 | 2017-08-30 | スタンレー電気株式会社 | 半導体発光素子 |
WO2024043316A1 (ja) * | 2022-08-25 | 2024-02-29 | 国立大学法人京都大学 | 2次元フォトニック結晶レーザ |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57149781A (en) * | 1981-03-11 | 1982-09-16 | Fujitsu Ltd | Semiconductor luminous device |
JPS58140171A (ja) * | 1982-02-15 | 1983-08-19 | Nec Corp | 発光ダイオ−ド |
JP2792781B2 (ja) * | 1992-03-03 | 1998-09-03 | シャープ株式会社 | 発光ダイオード及びその製造方法 |
JPH0697498A (ja) * | 1992-09-17 | 1994-04-08 | Toshiba Corp | 半導体発光素子 |
JPH07254731A (ja) * | 1994-03-15 | 1995-10-03 | Hitachi Cable Ltd | 発光素子 |
JPH07273368A (ja) * | 1994-03-29 | 1995-10-20 | Nec Kansai Ltd | 発光ダイオード |
JP3511213B2 (ja) * | 1994-03-30 | 2004-03-29 | スタンレー電気株式会社 | 光半導体デバイス |
JPH08335717A (ja) * | 1995-06-06 | 1996-12-17 | Rohm Co Ltd | 半導体発光素子 |
JP3595097B2 (ja) * | 1996-02-26 | 2004-12-02 | 株式会社東芝 | 半導体装置 |
JP3239061B2 (ja) * | 1996-02-29 | 2001-12-17 | シャープ株式会社 | 発光ダイオード及びその製造方法 |
JP3156756B2 (ja) * | 1997-01-10 | 2001-04-16 | サンケン電気株式会社 | 半導体発光素子 |
US6492661B1 (en) * | 1999-11-04 | 2002-12-10 | Fen-Ren Chien | Light emitting semiconductor device having reflection layer structure |
CN100334745C (zh) * | 1999-11-05 | 2007-08-29 | 洲磊科技股份有限公司 | 发光半导体装置及其制作方法 |
JP3893874B2 (ja) * | 1999-12-21 | 2007-03-14 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法 |
JP4310998B2 (ja) * | 2002-11-18 | 2009-08-12 | パナソニック電工株式会社 | 半導体発光素子 |
JP4159865B2 (ja) * | 2002-12-11 | 2008-10-01 | シャープ株式会社 | 窒化物系化合物半導体発光素子の製造方法 |
KR100452751B1 (ko) * | 2003-06-03 | 2004-10-15 | 삼성전기주식회사 | 그물망 전극이 적용된 ⅲ-질화물 반도체 발광소자 |
JP2005116794A (ja) * | 2003-10-08 | 2005-04-28 | Mitsubishi Cable Ind Ltd | 窒化物半導体発光素子 |
JP2005123526A (ja) * | 2003-10-20 | 2005-05-12 | Oki Data Corp | 半導体装置、ledヘッド、及び画像形成装置 |
KR20050051920A (ko) * | 2003-11-28 | 2005-06-02 | 삼성전자주식회사 | 플립칩형 질화물계 발광소자 및 그 제조방법 |
CN1641893A (zh) * | 2004-01-02 | 2005-07-20 | 炬鑫科技股份有限公司 | 一种氮化镓系发光二极管结构及其制造方法 |
JP2005277372A (ja) * | 2004-02-25 | 2005-10-06 | Sanken Electric Co Ltd | 半導体発光素子及びその製造方法 |
-
2005
- 2005-09-30 CN CNB2005100303217A patent/CN100388515C/zh active Active
-
2006
- 2006-09-29 KR KR1020087005001A patent/KR20080049724A/ko not_active Application Discontinuation
- 2006-09-29 JP JP2008532572A patent/JP2009510730A/ja active Pending
- 2006-09-29 WO PCT/CN2006/002584 patent/WO2007036164A1/en active Application Filing
- 2006-09-29 EP EP06791170.1A patent/EP1929545A4/en not_active Withdrawn
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101809771B (zh) * | 2007-09-28 | 2014-05-07 | 欧司朗光电半导体有限公司 | 具有镜层的薄膜发光二极管及其制造方法 |
CN102017193B (zh) * | 2008-03-25 | 2012-05-30 | 晶能光电(江西)有限公司 | 具有双面钝化的半导体发光器件 |
CN102024895A (zh) * | 2009-09-10 | 2011-04-20 | Lg伊诺特有限公司 | 发光器件、***和封装 |
US8421106B2 (en) | 2009-09-10 | 2013-04-16 | Lg Innotek Co., Ltd. | Light emitting device, system and package |
CN102097565A (zh) * | 2009-11-06 | 2011-06-15 | Lg伊诺特有限公司 | 发光器件、发光器件封装以及照明*** |
CN102097565B (zh) * | 2009-11-06 | 2016-06-01 | Lg伊诺特有限公司 | 发光器件、发光器件封装以及照明*** |
CN102222744A (zh) * | 2010-04-15 | 2011-10-19 | Lg伊诺特有限公司 | 发光器件及其制造方法、发光器件封装以及照明*** |
CN102222744B (zh) * | 2010-04-15 | 2016-05-18 | Lg伊诺特有限公司 | 发光器件和发光器件封装 |
CN101997070A (zh) * | 2010-09-10 | 2011-03-30 | 北京工业大学 | 一种高反射低电压的倒装发光二极管及其制备方法 |
CN103456864A (zh) * | 2013-08-29 | 2013-12-18 | 刘晶 | 一种发光二极管芯片的制作方法、芯片及发光二极管 |
CN103456864B (zh) * | 2013-08-29 | 2016-01-27 | 刘晶 | 一种发光二极管芯片的制作方法、芯片及发光二极管 |
CN110993756A (zh) * | 2019-12-18 | 2020-04-10 | 东莞市中晶半导体科技有限公司 | Led芯片及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100388515C (zh) | 2008-05-14 |
WO2007036164A1 (en) | 2007-04-05 |
WO2007036164A8 (en) | 2007-07-19 |
JP2009510730A (ja) | 2009-03-12 |
EP1929545A1 (en) | 2008-06-11 |
KR20080049724A (ko) | 2008-06-04 |
EP1929545A4 (en) | 2014-03-05 |
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