EP1719144B1 - Hochfrequenz-mems-schalter mit gebogenem schaltelement und verfahren zu seiner herstellung - Google Patents

Hochfrequenz-mems-schalter mit gebogenem schaltelement und verfahren zu seiner herstellung Download PDF

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Publication number
EP1719144B1
EP1719144B1 EP05715021.1A EP05715021A EP1719144B1 EP 1719144 B1 EP1719144 B1 EP 1719144B1 EP 05715021 A EP05715021 A EP 05715021A EP 1719144 B1 EP1719144 B1 EP 1719144B1
Authority
EP
European Patent Office
Prior art keywords
switching element
substrate
signal conductor
switching
mems switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP05715021.1A
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German (de)
English (en)
French (fr)
Other versions
EP1719144A1 (de
Inventor
Ulrich Prechtel
Volker Ziegler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Airbus Defence and Space GmbH
Original Assignee
Airbus Defence and Space GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Airbus Defence and Space GmbH filed Critical Airbus Defence and Space GmbH
Publication of EP1719144A1 publication Critical patent/EP1719144A1/de
Application granted granted Critical
Publication of EP1719144B1 publication Critical patent/EP1719144B1/de
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0081—Electrostatic relays; Electro-adhesion relays making use of micromechanics with a tapered air-gap between fixed and movable electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49105—Switch making

Definitions

  • the present invention relates to a high-frequency MEMS switch with a curved switching element according to the preamble of claim 1 and a method for manufacturing a high-frequency MEMS switch with a curved switching element according to the preamble of claim 11.
  • MEMS Micro Electro Mechanical Systems
  • MEMS Micro Electro Mechanical Systems
  • switching elements designed as microelectromechanical system are particularly suitable for space applications and satellite systems.
  • high-frequency MEMS switches are used in radar systems, satellite communication systems, wireless communication systems and instrument systems.
  • high-frequency MEMS switches are needed in phase antenna systems and phase shifters for satellite-based radar systems.
  • High frequency MEMS switches offer a number of advantages, such as: an extremely low power consumption, a good insulation or low parasitic capacitances, a low insertion loss or low insertion loss and low production costs.
  • MEMS switches that are used in the high frequency range, in a range between 0.1 and 100 GHz.
  • These MEMS switches have cantilever arms designed as mechanical springs that open by electrostatic forces or closing a circuit.
  • the cantilever beam is mounted on a substrate and electrostatically attracted by an electrode to close a contact. Without applied voltage of the switching arm is returned by elastic restoring forces to its original position, and the contact is opened.
  • a switching element influences the progression of an electromagnetic wave on a signal line by opening or closing a transmission path. This can be done in the manner of a series switch, a shunt switch or a series shunt switch.
  • a large distance to the contact area is necessary in the open state of the switching element, since the capacity in this state should be as low as possible in order to obtain an undisturbed line.
  • a small distance is required for the switching process itself, since only small electrostatic forces act.
  • a MEMS switch is described with a bent switching element, which is designed in the form of a cantilever beam as a cantilevered element.
  • the switching element is mounted above a bottom electrode with one end on a substrate, wherein the remaining portion of the switching element is directed in an arcuate upward and protrudes from the substrate.
  • the upwardly bent switching element applies by electrostatic forces to the bottom electrode, so that the free end of the switching element is in contact with a signal line. Without the applied switching voltage, the switching element is brought back by an elastic tension in the upward position in which it from the signal line is far away. When switching back and forth between the two switching states, the switching element moves like the tongue of a frog.
  • the elastic restoring forces are usually very small, so that there is a fear that the switching element adheres to the surface of the signal line by adhesion.
  • the switching elements often lack sufficient reliability, which is necessary for long-term use, for example in space.
  • the EP-A-1 246 216 describes an electrostatic micro-relay in which on a substrate, a switching element designed in the form of a bridge construction is provided, which is supported on two laterally offset points with respect to a signal line to be switched.
  • the switching element is neither in the form of a cantilevered arm, nor does it exhibit an arcuate elastic bending region which progressively approaches an electrode assembly upon application of the electrostatic force.
  • a micro-switch is known in which a signal conductor and a switching element is provided with two on both sides parallel to the signal conductor arranged switching arms, wherein the switching arms each have an elastic bending region and are connected together at a free end by a bridge positioned over the signal conductor.
  • the switching arms are planar, not bent, formed.
  • This known switch is also not a high-frequency switch, since the wiring shown does not correspond to a defined impedance control, and is therefore not suitable for switching high frequencies.
  • At one of the US 6,373,682 B1 known micro-switch is provided for generating an electrostatic force acting on the switching element between two insulating layers on the upper side of the substrate facing the switching electrodes.
  • the electrode arrangement provided for generating the electrostatic force acting on the switching element is formed by a bottom electrode arranged directly below the switching element, connected to the above-described problems relating to adhesion or restoring forces.
  • the switching element may also have a different shape, or also be connected at one of its ends with the fixed part (base substrate) or electrodes.
  • a higher mechanical stability and a larger switching force is to be achieved with a small footprint.
  • the high-frequency MEMS switch includes a signal conductor disposed on a substrate, a longitudinally shaped switching element having a bent elastic bending portion and cantilevered on the substrate, and an electrode assembly for generating a switching member acting on the switching element electrostatic force to bend the switching element toward the signal conductor, wherein the switching element is arranged in its longitudinal direction parallel to the signal conductor and having a contact region extending transversely to the switching element partially or completely over the signal conductor, and wherein the elastic bending region of the switching element at Action of the electrostatic force parallel to the signal line progressively approaches the electrode assembly.
  • the MEMS switch comprises a signal conductor arranged on a substrate, a longitudinally shaped switching element which has an elastic bending region and is mounted cantilevered on the substrate, and an electrode arrangement for producing a switching element acting on the switching element electrostatic force to bend the switching element toward the signal conductor, wherein the switching element is arranged in its longitudinal direction parallel to the signal conductor and has a contact region extending transversely to the switching element at least partially over the signal conductor, wherein the elastic bending region of the switching element under the action of electrostatic force progressively approaches in a direction parallel to the signal conductor to the electrode assembly, and wherein the switching element is designed bent in its elastic bending region.
  • the electrode arrangement provided for generating an electrostatic force acting on the switching element is formed by an electrode arranged below the substrate.
  • the required voltage for closing the element is kept low, yet a large switching path is possible, so that the distance in the open state is large and thus the capacity is low.
  • the arrangement of the switching element in its longitudinal direction parallel to the signal conductor a further miniaturization is achieved, wherein the switching element can still be configured relatively long and thereby a higher mechanical stability and a greater switching force is achieved.
  • a greater restoring force or stronger design of the switching element is possible. Due to the large possible length and area of the switching element greater electrostatic forces on the one hand and greater restoring forces or a thicker design of the switching element on the other hand can be achieved.
  • the substrate is a high-resistance substrate which carries on its rear side (underside) a metallization forming the electrode arrangement.
  • the switching element comprises at least two switching arms with a bent elastic bending region, which are arranged on both sides of the signal conductor and extend in the longitudinal direction parallel to the signal conductor, wherein the switching arms are interconnected by a bridge positioned over the signal conductor formed by the respective contact region.
  • the two-sided arrangement with bridge-like contact area the reliability of the MEMS switch is further increased because even greater restoring forces and electrostatic forces can be achieved with low space and energy requirements, thereby achieving a particularly high mechanical stability and switching power with low space and energy requirements becomes.
  • the electrode assembly is formed by at least one bottom or base electrode, which is arranged under the switching element surface on the substrate to attract the switching element electrostatically.
  • the base electrode or bottom electrode is arranged below each switching arm in the case of switching arms arranged on both sides.
  • the electrode assembly advantageously extends parallel to the substrate surface to progressively attract the switching element to the substrate surface by the electrostatic force in its bending region.
  • the bent bending region is preferably formed by bimorph material.
  • a further advantageous embodiment provides that the bending region for generating a tensile stress, e.g. has melted surface by laser heating.
  • the tension can also be achieved by suitable control of the layer deposition during manufacture.
  • the switching element is manufactured in thin-film technology. As a result, a cost-effective production and small construction is achieved.
  • the contact region of the switching element preferably comes into direct contact with the signal conductor when the electrostatic force is applied.
  • the contact area upon application of the electrostatic force, occupies a minimum distance from the signal conductor, i. he does not come into direct contact with the signal conductor. This results in a large capacitance between the signal conductor and the switching element, so that the signal line is interrupted.
  • the minimum distance may e.g. be achieved or maintained by a suitable dielectric isolation.
  • the following steps are carried out: forming a signal line on a substrate; optionally forming an electrode arrangement on the substrate, for example when the substrate has no intrinsic conduction; Forming an elongated switching element having a bent elastic bending region on the substrate such that it is pulled in its bending region from the electrode assembly by an electrostatic force longitudinally towards the substrate and removed by elastic restoring force in the bending region of the substrate; wherein the switching element is arranged in its longitudinal direction parallel to the signal conductor such that a laterally protruding contact region of the switching element extends transversely across the signal conductor, so that the elastic bending region of the switching element approaches the electrode arrangement progressively parallel to the signal line upon application of the electrostatic force to approximate the contact region to the signal conductor, wherein the switching element is designed bent in its elastic bending region.
  • the electrode arrangement is formed by an electrode arranged below the substrate.
  • the substrate is produced as a high-resistance substrate, and that a metallization forming the electrode arrangement is formed on the rear side (or "underside") of the high-resistance substrate.
  • the switching element is shaped such that it has at least two switching arms with a bent elastic bending region, wherein the switching arms are arranged on both sides of the signal conductor, so that they extend in the longitudinal direction parallel to the signal conductor and the switching arms connected by a bridge positioned over the signal conductor bridge are formed by the respective contact area.
  • the bridge can be formed as a contact area.
  • the surface of the bending region can be melted to produce a tensile stress by means of laser heating.
  • FIG. 1 shows as a particularly preferred embodiment, a MEMS switch 10, which is suitable for high-frequency applications and having two parallel switching arms.
  • the MEMS switch 10 comprises a substrate 11, on which a signal line 12 is formed, which extends in one direction over the substrate 11.
  • an upwardly bent switching element 13th fastened which in this example comprises two elongated, mutually parallel switching arms 13a, 13b.
  • the switching arms 13a, 13b of the switching element 13 are each fixed at one end flat on the substrate surface and parallel thereto, while the remaining part is bent upwards, so that the respective other end of the switching arms 13a, 13b is removed from the substrate surface.
  • each switching arm 13a, 13b of the switching element 13 has a central elastic bending region 131, 132, which is bent upwards or curved in the switch position shown here.
  • each switching arm 13a, 13b of the switching element 13 is an electrode arrangement which, in this example, is formed by two bottom electrodes 14a, 14b.
  • the bottom electrodes 14a, 14b serve to exert on the cantilevered switching arms 13a, 13b, in the presence of a switching voltage, an electrostatic attraction such that they move towards the substrate surface, with the elastic bending portions 131, 132 taking a straight shape.
  • the switching element 13 further comprises a contact region 15, which extends across the signal line 12 in this example.
  • a contact region 15 approximates the signal line 12 to provide direct electrical contact or capacitive coupling to the signal conductors To cause signal line 15.
  • the MEMS switch 10 is in its closed state.
  • the switching element 13 is provided in its bending areas 131, 132 with a tensile stress that causes a restoring force, so that the switching arms 13a, 13b return to the bent state when no electrostatic attraction force through the bottom electrodes 14a, 14b on the switching arms 13a, 13b is exercised.
  • the MEMS switch 10 assumes its open state, in which the contact region 15 is removed from the signal line 12, and thus no electrical contact and no or only a very small capacitive coupling to the signal line 12 is present.
  • the switching element 13 is arranged with its designed as elongated bars, cantilevered switching arms 13a, 13b in its longitudinal direction parallel to the signal line 12.
  • the contact region 15 forms a bridge which connects the two switching arms 13a, 13b in the region of their free ends to one another and in this embodiment extends completely across the signal line 12 transversely thereto.
  • the switching arms 13a, 13b approach each other gradually from their fixed ends to the bottom electrodes 14a, 14b, in a direction parallel to Signal line 12 runs.
  • FIG. 2 shows in a plan view from above an arrangement of MEMS switches 20, in which the individual switching elements 23 each have only one elongated, cantilevered switching arm 23a, which runs parallel to the signal line 22.
  • Each of the switching elements 23 has one or more laterally disposed on the respective switching arm 23 a contact portion 25 which extends across the signal line 22.
  • the respective contact region 25 can either extend completely across the entire width of the signal line 22 or only partially. It can be arranged laterally on a switching element 23 and a plurality of contact areas 25, as on the right side in FIG. 2 shown.
  • the switching elements 25, which are in FIG. 2 are arranged in the middle region on both sides of the signal line 22, are aligned so that their opposite contact areas 25 engage tooth-like above the signal line 22.
  • the in FIG. 1 shown high-frequency MEMS switch 10 is executed in a shunt configuration.
  • the coupling capacity due to the distance between the signal line 12 and the contact area 15 very low. Therefore, the influence on the propagation of an electromagnetic wave on the signal line 12 is also small.
  • the curved switching element 13 is caused to bend down so that the bridge-type contact region 25 comes to the signal line 12 or in the immediate vicinity, so that a high capacitance between the signal line 12th and the switching element 13 is formed, whereby the progression of the electromagnetic wave on the transmission or signal line 12 is hindered or interrupted.
  • the switching elements 13, 23 shown with their switching arms 13a, 13b, 23a and contact areas 15, 25 are manufactured in thin-film technology, wherein the bent switching elements are arranged with their switching arms parallel to the signal line 12, 25 and in the in FIG. 1 embodiment shown by a bridge, which is formed by the contact region 15, are connected.
  • the signal line 12, 22, which extends below the bridge or the contact region 15, 25 on the substrate 11, 21, typically has an electrical resistance of, for example, about 50 ⁇ . However, it can also be configured with other resistors, depending on the requirements of the particular application.
  • the MEMS switch forms an RF relay.
  • FIGS. 3a-f show as examples various switch configurations that are possible with the MEMS switch according to the invention.
  • Figure 3a and 3b show a circuit in series with the signal line 12, wherein FIG. 3a the signal line is interrupted and in FIG. 3b the signal line 12 is closed.
  • FIG. 3c and d show a shunt-switch configuration in which the circuit is done by an electrical shunt. It is in Figure 3c the signal line 12 is closed because the switch is open and thus there is no shunt. In 3d figure the signal line 12 is interrupted because the switch is closed and a shunt exists.
  • FIGS. 3e and f show a combination of serial and shunt configuration, where in FIG. 3e the switch in the signal line 12 is open and in FIG. 3f the shunt is closed.
  • the substrate 11, 21 is made of a semiconductor material, while the signal line 12, 22 and the switching element 13, 23 are made of highly conductive material, such as Al, Cu, Au, etc.
  • the so-called sacrificial layer used in known processes can be replaced by a suitable surface modification, for example by hydrophobization.
  • a suitable surface modification for example by hydrophobization.
  • the curved shape of the switching element in its longitudinal direction parallel to the direction of the signal line a particularly large switching path is possible, so that the distance in the open state with small size of the switching element can still be made large and thus the capacity in the open state is low.
  • the inventive arrangement a higher mechanical stability is achieved.
  • the switching elements can be provided with a greater restoring force, since due to the geometrical arrangement of the electrodes and the switching elements, a greater electrostatic attraction can be achieved, yet there is a low parasitic capacitance in the open state.
  • the inventive design of the high-frequency MEMS switch improved long-term stability and greater reliability is achieved. In this case, the risk of adhesion or in general of sticking or catching of the switching element on the substrate surface or the surface of the signal line is reduced or eliminated.

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  • Micromachines (AREA)
EP05715021.1A 2004-02-27 2005-02-25 Hochfrequenz-mems-schalter mit gebogenem schaltelement und verfahren zu seiner herstellung Not-in-force EP1719144B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004010150A DE102004010150B9 (de) 2004-02-27 2004-02-27 Hochfrequenz-MEMS-Schalter mit gebogenem Schaltelement und Verfahren zu seiner Herstellung
PCT/DE2005/000317 WO2005083734A1 (de) 2004-02-27 2005-02-25 Hochfrequenz-mems-schalter mit gebogenem schaltelement und verfahren zu seiner herstellung

Publications (2)

Publication Number Publication Date
EP1719144A1 EP1719144A1 (de) 2006-11-08
EP1719144B1 true EP1719144B1 (de) 2015-10-14

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP05715021.1A Not-in-force EP1719144B1 (de) 2004-02-27 2005-02-25 Hochfrequenz-mems-schalter mit gebogenem schaltelement und verfahren zu seiner herstellung

Country Status (5)

Country Link
US (1) US7786829B2 (ja)
EP (1) EP1719144B1 (ja)
JP (1) JP4927701B2 (ja)
DE (1) DE102004010150B9 (ja)
WO (1) WO2005083734A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006061386B3 (de) * 2006-12-23 2008-06-19 Atmel Germany Gmbh Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung
JP6478397B2 (ja) * 2015-03-13 2019-03-06 国立大学法人山形大学 フェーズドアレイアンテナ
US10222265B2 (en) * 2016-08-19 2019-03-05 Obsidian Sensors, Inc. Thermomechanical device for measuring electromagnetic radiation

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58201218A (ja) * 1982-05-20 1983-11-24 オムロン株式会社 片持梁の製造方法
WO1986003879A1 (en) * 1984-12-19 1986-07-03 Simpson George R Electrostatic binary switching and memory devices
EP1026718A2 (en) * 1999-02-02 2000-08-09 C.R.F. Società Consortile per Azioni Electrostatically controlled micro-relay device
US20020030566A1 (en) * 1997-11-17 2002-03-14 Bozler Carl O. Microelecto-mechanical system actuator device and reconfigurable circuits utilizing same
EP1246216A2 (en) * 2001-03-27 2002-10-02 Omron Corporation Electrostatic micro-relay, radio device and measuring device using the electrostatic micro-relay, and contact switching method

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JPH09257832A (ja) * 1996-03-26 1997-10-03 Matsushita Electric Works Ltd エレクトレット応用装置及びその製造方法
JPH10154456A (ja) * 1996-11-25 1998-06-09 Omron Corp マイクロリレー、その製造方法およびその制御方法
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US6373682B1 (en) * 1999-12-15 2002-04-16 Mcnc Electrostatically controlled variable capacitor
JP3675312B2 (ja) * 2000-07-10 2005-07-27 松下電器産業株式会社 薄膜構造体、及びその応力調整方法
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WO2002073673A1 (en) 2001-03-13 2002-09-19 Rochester Institute Of Technology A micro-electro-mechanical switch and a method of using and making thereof
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JP4109498B2 (ja) * 2002-06-11 2008-07-02 松下電器産業株式会社 スイッチ
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58201218A (ja) * 1982-05-20 1983-11-24 オムロン株式会社 片持梁の製造方法
WO1986003879A1 (en) * 1984-12-19 1986-07-03 Simpson George R Electrostatic binary switching and memory devices
US20020030566A1 (en) * 1997-11-17 2002-03-14 Bozler Carl O. Microelecto-mechanical system actuator device and reconfigurable circuits utilizing same
EP1026718A2 (en) * 1999-02-02 2000-08-09 C.R.F. Società Consortile per Azioni Electrostatically controlled micro-relay device
EP1246216A2 (en) * 2001-03-27 2002-10-02 Omron Corporation Electrostatic micro-relay, radio device and measuring device using the electrostatic micro-relay, and contact switching method

Also Published As

Publication number Publication date
JP4927701B2 (ja) 2012-05-09
DE102004010150A1 (de) 2005-09-22
JP2007525805A (ja) 2007-09-06
DE102004010150B4 (de) 2011-12-29
US20070215446A1 (en) 2007-09-20
US7786829B2 (en) 2010-08-31
DE102004010150B9 (de) 2012-01-26
EP1719144A1 (de) 2006-11-08
WO2005083734A1 (de) 2005-09-09

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