EP1390561A1 - Procede et dispositif de deposition de couches - Google Patents

Procede et dispositif de deposition de couches

Info

Publication number
EP1390561A1
EP1390561A1 EP02730186A EP02730186A EP1390561A1 EP 1390561 A1 EP1390561 A1 EP 1390561A1 EP 02730186 A EP02730186 A EP 02730186A EP 02730186 A EP02730186 A EP 02730186A EP 1390561 A1 EP1390561 A1 EP 1390561A1
Authority
EP
European Patent Office
Prior art keywords
layer
process chamber
parameters
calibration
properties
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02730186A
Other languages
German (de)
English (en)
Inventor
Michael Heuken
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of EP1390561A1 publication Critical patent/EP1390561A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases

Definitions

  • the invention relates to a method and a device for depositing, in particular, crystalline active 00007 layers on, in particular, crystalline substrates from 00008 gaseous starting materials, which in particular brought 00009 with a carrier gas into the process chamber of a reactor 00010 where, depending on the process parameters determined in preliminary tests such as, in particular, 00012 substrate temperature, process chamber pressure, mass flow of the 00013 raw materials introduced into the process chamber or 00014 total mass flow, in particular after a previous 00015, the pyrolytic decomposition accumulates on the substrate 00016 and forms an active layer, the Layer properties such as, in particular, stochiometry, doping, morphology, temperature, growth rate or the like by means of 00019 sensors acting in the process chamber without touching 00020 sen or determined from surface measurements.
  • Such processes are carried out in a device which has a reactor housing in which 00024 a process chamber is arranged which, in particular, 00025 can be heated by supplying heat to a substrate holder, 00026 with a gas inlet for the inlet of gaseous starting materials, whose decay products are on a substrate carried by the Sub00028 strathalter to form a 00029 layer, with at least one sensor acting in the process 00030 chamber to determine the 00031 layer properties during layer growth and 00032 with an electronic control unit for controlling 00033 the process chamber heating, mass flow controller 00034 for control the mass flow of the raw materials and 00035 a pump to control the process chamber pressure.
  • 00036 Generic devices on which the generic
  • the device or the method also relates
  • 00051 are known. 00052
  • 00060 tum parameters such as temperatures, composition of the
  • 00090 ven zone can be used in a component.
  • the invention is based on the object
  • the method is in particular thereby
  • 00155 measurements can also have volume properties such as
  • composition close to the surface composition
  • 00166 is when the layer properties are set at
  • 00193 can consist of individual layers. The measurement is done
  • the method is preferably an MOCVD method.
  • 00200 can also be included in process control. It
  • 00203 gases can be mixed in with mass flow
  • 00205 may include one or more dopants.
  • 00211 determined the process within the process chamber.
  • the sensor can be a ref
  • 00217 layer properties can also be
  • thermometry or by other methods, e.g. with thermo
  • 00219 ment measurements can be determined.
  • X-ray diffraction can also be determined.
  • 00220 can be used to determine the layer properties.
  • 00234 A can be used to measure the temperature of the substrate holder
  • thermocouple can be used.
  • 00236 layer sequence can have different band gaps
  • the calibration layers can also be different
  • the invention further relates to a semiconductor layer film
  • FIG. 1 the schematic structure of a MOCVD epitaxy device
  • 00249 device the flow diagram of the process flow
  • 00252 00253 the structure of a semiconductor layer.
  • 00254 00255 The reactor 1 00256 shown roughly schematically in FIG. 1 has a process chamber 2.
  • the starting materials for example trimethylgallium, trimethylindium, arsine, phosphine, water 00259 or nitrogen, reach the process chamber 2 through the gas inlet 3 00257 - 00260 flow of the gases through the gas inlet 3 into the process chamber 00261 mer 2 takes place by controlling the global parameter mass flow 00262.
  • the vapor pressure of the liquid 00263 or solid MO sources is controlled.
  • 00264 00265 In the process chamber 2 there is a substrate holder 00266 carrier 6, which is heated from below by means of a heater 11 00267.
  • the substrate holder carrier On the substrate holder carrier, which is rotated about 00268 the axis of rotation 8 during the production run 00269, there are one or more substrate holders 7, 00270 which are also driven 00271 about their own axis.
  • the substrate holders 7 On the substrate holders 7 are the 00272 substrates 9, which can be gallium arsenite or 00273 indium phosphite or gallium nitrite single crystal wafers 00274.
  • Disks 00275 made of magnesium oxide, sapphire, silicon or silicon carbide 00276 are also suitable as substrate material.
  • the process chamber ceiling 4 is located above the substrate holder carrier 7.
  • the 00278 process chamber 2 is surrounded by the process chamber walls 5.
  • the 00279 process chamber ceiling 4 and the process chamber wall 5 can 00280 are heated themselves. You can also chilled
  • 00285 means regulated by a pump, not shown, that
  • the temperature of the substrate holder carrier 6 can by means of
  • thermocouple or pyrometric 12 measured
  • 00314 meters indicate how the process parameters 00315 are to be changed if one or more shift properties
  • 00320 can be separated, but one or more
  • 00333 is of the type of active layer or of the active
  • 00351 00352 In the production of pseudomorphic heterostructure 00353 field effect transistors, the properties of the active interface 00355 to the conductive channel, the tension state of the 00356 channel and the minimum required doping 00357 are determined when the calibration layer sequence is deposited.
  • 00358 00359
  • Several calibration layers are also deposited in the production of heterostructure bipolar transistors 00360.
  • 00362 00363 The method is also suitable for the production of 00364 low-dimensional structures, for example quantum 00365 dots or quantum wires, which only consist of lateral atomic collections not connected together.
  • the method can also be used pyrometrically or otherwise 00369 optically to calibrate the temperature measurement inside the reactor 00370 using thermocouples.
  • the calibration layer sequence consists of layers of certain 00372 composition, different growth rates and 00373 interfaces.
  • 00374 00375 The method is also suitable for the advantageous use of substrates with different surface properties, these include, for example, the advantageous desorption of the oxide layer before the start of growth or the 00379 control of the influence of surfactants.
  • 00380 00381 The method is suitable for producing binary, 00382 ternary or quaternary layers with changing 00383 compositions.
  • 00384 The process follows the 00385 steps shown in FIG.
  • FIG. 1 shows the layer structure.
  • a buffer layer 14 00 390 is first deposited on the substrate (not shown).
  • 00391 calibration layers 15, 16 are then deposited onto this buffer layer 14.
  • 00392 is followed by the deposition of a further buffer layer 17, on 00393 the active layer 18 is then deposited.
  • 00394 A cover layer 19 is deposited on the active layer 18, which can also be a layer sequence 00395.
  • 00396 00397 The process control can preferably be set 00398 so that if the desired layer properties are not achieved, the 00400 process run is terminated when the active layer grows.
  • a final layer is deposited on the active layer 00402 that has already started, so that the substrate 00403 can be used again.
  • 00404 00405 If deviations of the currently required growth parameters are recognized when separating the calibration layers 00408, 00408 can be used to adjust the growth parameters according to a known law.
  • 00410 00411 A deviation in growth rate can be made by tracking 00412 the partial pressure elements of the III group.
  • the 00413, in turn, can be done by changing the amount of carrier gas through the source by diluting the gas flow or through the pressure in the source or through the temperature of the bath of the source.
  • 00417 00418 A deviation in the substrate temperature can be caused by the
  • a deviation of the composition can be caused by
  • 00425 can be set. 00426
  • the partial prints are preferably tracked
  • the calibration para- 00453 determine parameters, which in the simplest case are

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif composé d'une chambre de processus (2) logée dans un boîtier de réaction, ladite chambre pouvant notamment être chauffée en tant que support de substrat (6, 7) par apport de chaleur ; d'une admission de gaz (3) destinée à l'admission de produits de départ gazeux dont les produits de décomposition se déposent sur un substrat porté par le support de substrat de manière à former une couche ; d'au moins un capteur agissant dans la chambre de traitement, destiné à déterminer les propriétés de couche ; d'une unité de commande électronique destinée à commander le chauffage de la chambre de processus ; de contrôleurs de flux massique destinés à commander les produits de départ ; et, d'une pompe destinée à commander la pression de la chambre de processus. Le dispositif selon l'invention est caractérisé en ce que l'unité de commande électronique produit des paramètres de processus modifiés à partir de valeurs de déviation dérivées de la croissance de la couche d'étalonnage à l'aide de paramètres d'étalonnage enregistrés, et commande ainsi le chauffage de la chambre de processus, les contrôleurs de flux massique, et la pompe dans la croissance de la suite de couches actives.
EP02730186A 2001-05-17 2002-04-22 Procede et dispositif de deposition de couches Withdrawn EP1390561A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10124609 2001-05-17
DE10124609A DE10124609B4 (de) 2001-05-17 2001-05-17 Verfahren zum Abscheiden aktiver Schichten auf Substraten
PCT/EP2002/004407 WO2002092876A1 (fr) 2001-05-17 2002-04-22 Procede et dispositif de deposition de couches

Publications (1)

Publication Number Publication Date
EP1390561A1 true EP1390561A1 (fr) 2004-02-25

Family

ID=7685506

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02730186A Withdrawn EP1390561A1 (fr) 2001-05-17 2002-04-22 Procede et dispositif de deposition de couches

Country Status (4)

Country Link
US (1) US6964876B2 (fr)
EP (1) EP1390561A1 (fr)
DE (1) DE10124609B4 (fr)
WO (1) WO2002092876A1 (fr)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2395492A (en) * 2002-11-25 2004-05-26 Thermo Electron Corp Improvements in deposition methods for the production of semiconductors
DE102004034448B4 (de) * 2004-07-16 2008-08-14 Qimonda Ag Verfahren zum Messen einer Schichtdicke einer Schicht auf einem Siliziumsubstrat und Satz von mindestens zwei Halbleiterprodukten
US20080314311A1 (en) * 2007-06-24 2008-12-25 Burrows Brian H Hvpe showerhead design
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
KR101177983B1 (ko) 2007-10-11 2012-08-29 발렌스 프로세스 이큅먼트, 인코포레이티드 화학 기상 증착 반응기
US8568529B2 (en) 2009-04-10 2013-10-29 Applied Materials, Inc. HVPE chamber hardware
US8183132B2 (en) * 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool
US20100263588A1 (en) * 2009-04-15 2010-10-21 Gan Zhiyin Methods and apparatus for epitaxial growth of semiconductor materials
KR20120003493A (ko) * 2009-04-24 2012-01-10 어플라이드 머티어리얼스, 인코포레이티드 후속하는 고온 그룹 ⅲ 증착들을 위한 기판 전처리
US20100273291A1 (en) * 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US9076827B2 (en) 2010-09-14 2015-07-07 Applied Materials, Inc. Transfer chamber metrology for improved device yield
TWI534291B (zh) 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
EP2920575A4 (fr) * 2013-12-30 2015-11-25 Halliburton Energy Services Inc Fabrication dépendant de la température d'éléments de calcul intégrés
WO2015102586A1 (fr) 2013-12-30 2015-07-09 Halliburton Energy Services, Inc. Détermination de dépendance en température d'indices de réfraction complexes de matériaux de couches pendant la fabrication d'éléments de calcul intégrés
US11685998B2 (en) * 2018-06-21 2023-06-27 Asm Ip Holding B.V. Substrate processing apparatus, storage medium and substrate processing method
EP3841227A4 (fr) * 2018-09-28 2021-10-06 Viavi Solutions Inc. Commande de revêtement à l'aide d'une correction de paramètre vers l'avant et d'une ingénierie inverse améliorée
DE102019107295A1 (de) * 2019-03-21 2020-09-24 Aixtron Se Verfahren zur Erfassung eines Zustandes eines CVD-Reaktors unter Produktionsbedingungen
DE102022130987A1 (de) 2022-11-23 2024-05-23 Aixtron Se Verfahren zum Einrichten eines CVD-Reaktors

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3537544C1 (de) 1985-10-22 1987-05-21 Aixtron Gmbh Gaseinlassvorrichtung fuer Reaktionsgefaesse
CA1302803C (fr) * 1986-02-15 1992-06-09 Hiroji Kawai Appareil de metallisation par depot sous vide et methode connexe
DE3608783A1 (de) 1986-03-15 1987-09-17 Telefunken Electronic Gmbh Gasphasen-epitaxieverfahren und vorrichtung zu seiner durchfuehrung
GB8606748D0 (en) * 1986-03-19 1986-04-23 Secr Defence Monitoring surface layer growth
DE3721637A1 (de) * 1987-06-30 1989-01-12 Aixtron Gmbh Gaseinlass fuer eine mehrzahl verschiedener reaktionsgase in reaktionsgefaesse
DE3721638A1 (de) 1987-06-30 1989-01-12 Aixtron Gmbh Materialsparendes verfahren zur herstellung von mischkristallen
DE3721636A1 (de) * 1987-06-30 1989-01-12 Aixtron Gmbh Quarzglasreaktor fuer mocvd-anlagen
US5348911A (en) * 1987-06-30 1994-09-20 Aixtron Gmbh Material-saving process for fabricating mixed crystals
FR2638020B1 (fr) * 1988-10-14 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a collecteur de gaz ameliore
DE3918094A1 (de) * 1989-06-02 1990-12-06 Aixtron Gmbh Verfahren zur herstellung von dotierten halbleiterschichten
US5091320A (en) * 1990-06-15 1992-02-25 Bell Communications Research, Inc. Ellipsometric control of material growth
DE4133479A1 (de) 1991-10-09 1993-06-09 Halberg Maschinenbau Gmbh, 6700 Ludwigshafen, De Rohrbuendel-waermeaustauscher
JP2987379B2 (ja) * 1991-11-30 1999-12-06 科学技術振興事業団 半導体結晶のエピタキシャル成長方法
US5467732A (en) * 1991-12-13 1995-11-21 At&T Corp. Device processing involving an optical interferometric thermometry
US5772759A (en) * 1992-09-28 1998-06-30 Aixtron Gmbh Process for producing p-type doped layers, in particular, in II-VI semiconductors
DE4232504B4 (de) 1992-09-28 2010-01-21 Aixtron Gmbh Verfahren zur Herstellung von p-dotierten Schichten insbesondere in II-VI-Halbleitern
US5453124A (en) * 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
JP3124861B2 (ja) * 1993-03-24 2001-01-15 富士通株式会社 薄膜成長方法および半導体装置の製造方法
DE4326697C2 (de) 1993-08-09 2002-12-05 Aixtron Gmbh Vorrichtung zum Einlassen wenigstens eines Gases und deren Verwendung
DE4326696A1 (de) 1993-08-09 1995-02-16 Aixtron Gmbh Vorrichtung zur Gasmischung und Einleitung
DE4446992B4 (de) 1994-01-19 2006-05-11 Aixtron Ag Vorrichtung zum Abscheiden von Schichten auf Substraten
WO1996000314A2 (fr) 1994-06-24 1996-01-04 Aixtron Gmbh Reacteur et procede permettant de recouvrir des substrats plans
JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
US5552327A (en) * 1994-08-26 1996-09-03 North Carolina State University Methods for monitoring and controlling deposition and etching using p-polarized reflectance spectroscopy
JP3360098B2 (ja) * 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
US5652431A (en) * 1995-10-06 1997-07-29 The United States Of America As Represented By The Secretary Of The Navy In-situ monitoring and feedback control of metalorganic precursor delivery
DE19540771A1 (de) 1995-11-02 1997-05-07 Hertz Inst Heinrich Gaseinlaßvorrichtung für eine Beschichtungsanlage
US6161054A (en) * 1997-09-22 2000-12-12 On-Line Technologies, Inc. Cell control method and apparatus
DE19813523C2 (de) 1998-03-26 2000-03-02 Aixtron Ag CVD-Reaktor und dessen Verwendung
US6086677A (en) * 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP3269463B2 (ja) * 1998-07-23 2002-03-25 信越半導体株式会社 薄膜成長温度の補正方法
KR100315599B1 (ko) * 1998-11-19 2002-02-19 오길록 실시간레이저반사율측정장치를이용한표면방출형레이저용에피택시성장시스템및그를이용한표면방출형레이저제조방법
US6210745B1 (en) * 1999-07-08 2001-04-03 National Semiconductor Corporation Method of quality control for chemical vapor deposition
US6306668B1 (en) * 1999-09-23 2001-10-23 Ut-Battelle, Llc Control method and system for use when growing thin-films on semiconductor-based materials
US6806951B2 (en) * 2000-09-20 2004-10-19 Kla-Tencor Technologies Corp. Methods and systems for determining at least one characteristic of defects on at least two sides of a specimen

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO02092876A1 *

Also Published As

Publication number Publication date
US20040152219A1 (en) 2004-08-05
US6964876B2 (en) 2005-11-15
DE10124609A1 (de) 2002-11-21
WO2002092876A1 (fr) 2002-11-21
DE10124609B4 (de) 2012-12-27

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