EP1321843B1 - Stromquellenschaltung - Google Patents
Stromquellenschaltung Download PDFInfo
- Publication number
- EP1321843B1 EP1321843B1 EP02102824A EP02102824A EP1321843B1 EP 1321843 B1 EP1321843 B1 EP 1321843B1 EP 02102824 A EP02102824 A EP 02102824A EP 02102824 A EP02102824 A EP 02102824A EP 1321843 B1 EP1321843 B1 EP 1321843B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- mos field
- effect transistor
- current
- output
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
Definitions
- the invention relates to a current source circuit, in which a first and a second MOS field effect transistor form a current mirror circuit, wherein the first MOS field effect transistor via a cascode-connected third MOS field-effect transistor a reference current can be supplied and the drain electrode of a with the second MOS field effect transistor in cascode fourth MOS field effect transistor has an output forms.
- a simple current mirror circuit consists of two transistors, in particular MOS field-effect transistors, whose source and gate electrodes are connected to each other are. Further, the gate electrode and the drain electrode of the one transistor are connected to each other connected and are acted upon by a reference current. The drain elec trode of the other MOS field effect transistor can then be the desired output current be removed. However, this is from the other MOS field effect transistor - im following also called output transistor - voltage depends, since its Parameters are voltage-dependent.
- the object of the invention is to provide a current source circuit, which in a large Output voltage range has a high output impedance.
- the extended-drain MOS field-effect transistor is an extended-drain-well-MOS field-effect transistor and that the further MOS field-effect transistor is a p-channel MOS field-effect transistor is.
- the current source circuit according to the invention has the advantage of a high output impedance over a very large output voltage range, the output voltage can exceed the operating voltage allowed for this technology. To reach These properties do not require additional mask steps for special high-voltage transistors needed. Furthermore, the current source circuit according to the invention can also be operated at an output voltage higher than the operating voltage of the rest Circuit is. In addition, the current source circuit according to the invention has a high accuracy of the current mirror ratio in the operating voltage, output voltage and temperature range.
- the current source circuit according to the invention serves as a current mirror when the reference current is supplied from the outside.
- the inventive Current source circuit is also a highly accurate power source.
- the current source circuit according to the invention has the advantage that, in contrast to other known circuits is not destroyed when the output transistor a Voltage is applied while the circuit itself, so the control amplifier and more Circuit elements are not yet supplied with an operating voltage.
- the current source circuit according to the invention has the advantage that they are in highly integrated Standard CMOS technologies can be used. By avoiding the hot-carrier effect At high output voltages also increases the life of the power source scarf tung.
- An advantageous embodiment of the current source circuit according to the invention exists in that at least one diode connected with the further MOS field-effect transistor MOS field effect transistor is connected in series.
- Another advantageous embodiment is designed such that the output of the control amplifier via a resistor to the gate electrode of the fourth MOS field-effect transistor is connected, wherein it is preferably provided that the variable gain amplifier is formed by an operational transconductance amplifier.
- the variable gain amplifier is formed by an operational transconductance amplifier.
- Extended-drain MOS field-effect transistors which also lightly doped drain n-well transistor or lightly doped drift region transistor, for example, are described in: Y.Q. Li, C.A.T. Salama, M. Seufert, M. King “Submicron BiCMOS compatible highvoltage MOS transistor ", ISPSD Proc., 1994, pp. 355-359.
- the transistors are formed as n-channel MOS field-effect transistors.
- a first MOS field effect transistor 1 and a second MOS field effect transistor 2 provide the actual current mirror, the supplied via an input 5, a reference current Iin can be.
- a current mirror circuit is known per se and needs in connection to be explained in detail with the present invention. It is, however briefly mentioned that the output 6 removable current Iout in a by Transistor geometries certain ratio to the reference current Iin stands. To the effect is different high voltages at the input 5 and at the output 6 to reduce a third transistor 3 having a bias voltage applied at 14 and a fourth transistor the first and second transistors in each case in cascode, wherein the MOS field effect transistor 4 in the following also called output transistor.
- an OTA (Operational transconductance amplifier) 7 the two source voltages the cascode transistors 3, 4 compared with each other, whereby a control signal arises, which is supplied via a resistor 8 of the gate electrode of the output transistor 4 becomes.
- a MOS field effect transistor 9 is connected as a capacitance between the output of the OTA 7 and ground potential.
- Embodiment protects the series connection of a p-channel MOS field effect transistor 10 and the two connected as diodes n- or p-channel MOS field effect transistors 11 and 12, the output transistor 4 in the event that a voltage at the output 6 is already present, while the supplied at 13 operating voltage (still) not available is.
- the transistor 10 receives 0V as the gate potential and switches over the MOS field-effect transistors 11, 12, the gate-drain voltage of the output transistor 4 on a value lower than the gate oxide breakdown voltage. This serves the resistance 8 for decoupling the OTA output. After starting the operating voltage at 13 turns off the MOS field effect transistor 10, so that the function of the cascode control is no longer affected.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
- Control Of Electrical Variables (AREA)
- Control Of Amplification And Gain Control (AREA)
- Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
Description
Durch den Einsatz eines Extended-drain-Transistors wird bei geeigneter Dimensionierung der n-Well-drift-region eine hohe Lebensdauer bis zur maximalen Ausgangsspannung erzielt. Ein Gate-oxide-breakdown wird unter allen Bedingungen durch die Transistorkombination 10, 11, 12 verhindert.
Claims (5)
- Stromquellenschaltung, bei welcher ein erster und ein zweiter MOS-Feldeffekttransistor eine Stromspiegelschaltung bilden, wobei dem ersten MOS-Feldeffekttransistor über einen in Kaskode geschalteten dritten MOS-Feldeffekttransistor ein Referenzstrom zuführbar ist, die Drain-Elektrode eines mit dem zweiten MOS-Feldeffekttransistor in Kaskode geschalteten vierten MOS-Feldeffekttransistors einen Ausgang bildet, und
dass die Source-Elektroden des dritten (3) und des vierten (4) MOS-Feldeffekttransistors an Eingänge eines Regelverstärkers (7) angeschlossen sind, dessen Ausgang mit der Gate-Elektrode des vierten MOS-Feldeffekttransistors (4) verbunden ist, dadurch gekennzeichnet dass der vierte MOS-Feldeffekttransistor (4) ein Extended-drain-MOS-Feldeffekttransistor ist und dass die Drain-Elektrode und die Gate-Elektrode des vierten MOS-Feldeffekttransistors (4) über einen weiteren MOS-Feldeffekttransistor (10) miteinander verbunden sind, dessen Gate-Elektrode mit einer Betriebsspannung für die Schaltung beaufschlagt ist. - Stromquellenschaltung nach Anspruch 1,
dadurch gekennzeichnet, dass der Extended-drain-MOS-Feldeffekttransistor ein Extended-drain-n-well-MOS-Feldeffekttransistor (4) ist und dass der weitere MOS-Feldeffekttransistor ein p-Kanal-MOS-Feldeffekttransistor (10) ist. - Stromquellenschaltung nach Anspruch 2,
dadurch gekennzeichnet, dass mit dem weiteren MOS-Feldeffekttransistor (10) mindestens ein als Diode geschalteter MOS-Feldeffekttransistor (11, 12) in Reihe geschaltet ist. - Stromquellenschaltung nach einem der vorhergehenden Ansprüche,
dadurch gekennzeichnet, dass der Ausgang des Regelverstärkers (7) über einen Widerstand (8) mit der Gate-Elektrode des vierten MOS-Feldeffekttransistors (4) verbunden ist. - Stromquellenschaltung nach einem der vorhergehenden Ansprüche,
dadurch gekennzeichnet, dass der Regelverstärker von einem Operational-transconductance-amplifier (7) gebildet ist.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10163633 | 2001-12-21 | ||
DE10163633A DE10163633A1 (de) | 2001-12-21 | 2001-12-21 | Stromquellenschaltung |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1321843A1 EP1321843A1 (de) | 2003-06-25 |
EP1321843B1 true EP1321843B1 (de) | 2005-12-14 |
Family
ID=7710634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02102824A Expired - Lifetime EP1321843B1 (de) | 2001-12-21 | 2002-12-19 | Stromquellenschaltung |
Country Status (5)
Country | Link |
---|---|
US (1) | US6690229B2 (de) |
EP (1) | EP1321843B1 (de) |
JP (1) | JP4157928B2 (de) |
AT (1) | ATE313109T1 (de) |
DE (2) | DE10163633A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2796781A1 (fr) | 1999-07-20 | 2001-01-26 | St Microelectronics Sa | Dimensionnement d'un systeme a transpondeur electromagnetique pour un fonctionnement en hyperproximite |
US7049935B1 (en) | 1999-07-20 | 2006-05-23 | Stmicroelectronics S.A. | Sizing of an electromagnetic transponder system for a dedicated distant coupling operation |
FR2804557B1 (fr) * | 2000-01-31 | 2003-06-27 | St Microelectronics Sa | Adaptation de la puissance d'emission d'un lecteur de transpondeur electromagnetique |
FR2808945B1 (fr) * | 2000-05-12 | 2002-08-16 | St Microelectronics Sa | Evaluation du nombre de transpondeurs electromagnetiques dans le champ d'un lecteur |
FR2808946A1 (fr) * | 2000-05-12 | 2001-11-16 | St Microelectronics Sa | Validation de la presence d'un transpondeur electromagnetique dans le champ d'un lecteur |
FR2808941B1 (fr) * | 2000-05-12 | 2002-08-16 | St Microelectronics Sa | Validation de la presence d'un transpondeur electromagnetique dans le champ d'un lecteur a demodulation d'amplitude |
FR2809251B1 (fr) * | 2000-05-17 | 2003-08-15 | St Microelectronics Sa | Dispositif de production d'un champ electromagnetique pour transpondeur |
FR2809235A1 (fr) * | 2000-05-17 | 2001-11-23 | St Microelectronics Sa | Antenne de generation d'un champ electromagnetique pour transpondeur |
FR2812986B1 (fr) * | 2000-08-09 | 2002-10-31 | St Microelectronics Sa | Detection d'une signature electrique d'un transpondeur electromagnetique |
US20030169169A1 (en) * | 2000-08-17 | 2003-09-11 | Luc Wuidart | Antenna generating an electromagnetic field for transponder |
US7071785B2 (en) * | 2003-10-22 | 2006-07-04 | Broadcom Corporation | Use of a thick oxide device as a cascode for a thin oxide transcoductance device in MOSFET technology and its application to a power amplifier design |
US7049894B1 (en) | 2004-02-27 | 2006-05-23 | Marvell International Ltd. | Ahuja compensation circuit with enhanced bandwidth |
US7071769B1 (en) * | 2004-02-27 | 2006-07-04 | Marvell International Ltd. | Frequency boosting circuit for high swing cascode |
US7425862B2 (en) * | 2004-08-10 | 2008-09-16 | Avago Technologies Ecbu Ip (Singapore) Pte Ltd | Driver circuit that employs feedback to enable operation of output transistor in triode region and saturation region |
KR100688803B1 (ko) * | 2004-11-23 | 2007-03-02 | 삼성에스디아이 주식회사 | 전류 범위 제어회로, 데이터 구동부 및 발광 표시장치 |
JP5078502B2 (ja) * | 2007-08-16 | 2012-11-21 | セイコーインスツル株式会社 | 基準電圧回路 |
JP4408935B2 (ja) * | 2008-02-07 | 2010-02-03 | 日本テキサス・インスツルメンツ株式会社 | ドライバ回路 |
CN102455727B (zh) * | 2010-10-28 | 2013-10-23 | 南京航空航天大学 | 100pA-1μA量程的微弱电流源 |
CN108683167B (zh) * | 2018-07-03 | 2024-04-09 | 苏州锴威特半导体股份有限公司 | 一种pd设备的防浪涌电路 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2012481B (en) * | 1978-01-09 | 1982-04-07 | Rca Corp | Egfet mirrors |
GB8913439D0 (en) * | 1989-06-12 | 1989-08-02 | Inmos Ltd | Current mirror circuit |
JP3499250B2 (ja) | 1992-08-10 | 2004-02-23 | 株式会社ルネサステクノロジ | 半導体集積回路装置及びa/d変換回路 |
US5680037A (en) * | 1994-10-27 | 1997-10-21 | Sgs-Thomson Microelectronics, Inc. | High accuracy current mirror |
US5694072A (en) * | 1995-08-28 | 1997-12-02 | Pericom Semiconductor Corp. | Programmable substrate bias generator with current-mirrored differential comparator and isolated bulk-node sensing transistor for bias voltage control |
US5612614A (en) * | 1995-10-05 | 1997-03-18 | Motorola Inc. | Current mirror and self-starting reference current generator |
KR100202635B1 (ko) * | 1995-10-13 | 1999-06-15 | 구본준 | 리서프 이디모스 트랜지스터와 이를 이용한 고전압 아날로그의 멀티플렉서회로 |
US5844434A (en) | 1997-04-24 | 1998-12-01 | Philips Electronics North America Corporation | Start-up circuit for maximum headroom CMOS devices |
US5847556A (en) * | 1997-12-18 | 1998-12-08 | Lucent Technologies Inc. | Precision current source |
US6087820A (en) * | 1999-03-09 | 2000-07-11 | Siemens Aktiengesellschaft | Current source |
US6381491B1 (en) * | 2000-08-18 | 2002-04-30 | Cardiac Pacemakers, Inc. | Digitally trimmable resistor for bandgap voltage reference |
US6466081B1 (en) * | 2000-11-08 | 2002-10-15 | Applied Micro Circuits Corporation | Temperature stable CMOS device |
-
2001
- 2001-12-21 DE DE10163633A patent/DE10163633A1/de not_active Withdrawn
-
2002
- 2002-12-18 US US10/323,352 patent/US6690229B2/en not_active Expired - Lifetime
- 2002-12-18 JP JP2002366385A patent/JP4157928B2/ja not_active Expired - Fee Related
- 2002-12-19 EP EP02102824A patent/EP1321843B1/de not_active Expired - Lifetime
- 2002-12-19 AT AT02102824T patent/ATE313109T1/de not_active IP Right Cessation
- 2002-12-19 DE DE50205270T patent/DE50205270D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2003223232A (ja) | 2003-08-08 |
DE50205270D1 (de) | 2006-01-19 |
US6690229B2 (en) | 2004-02-10 |
DE10163633A1 (de) | 2003-07-10 |
ATE313109T1 (de) | 2005-12-15 |
US20030117210A1 (en) | 2003-06-26 |
JP4157928B2 (ja) | 2008-10-01 |
EP1321843A1 (de) | 2003-06-25 |
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