JPS56105479A - Pattern formation method - Google Patents

Pattern formation method

Info

Publication number
JPS56105479A
JPS56105479A JP817880A JP817880A JPS56105479A JP S56105479 A JPS56105479 A JP S56105479A JP 817880 A JP817880 A JP 817880A JP 817880 A JP817880 A JP 817880A JP S56105479 A JPS56105479 A JP S56105479A
Authority
JP
Japan
Prior art keywords
film
heat
substrate
specified
molybdenum oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP817880A
Other languages
Japanese (ja)
Inventor
Haruhiko Abe
Masao Nagatomo
Kazuo Mizuguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP817880A priority Critical patent/JPS56105479A/en
Publication of JPS56105479A publication Critical patent/JPS56105479A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To form a fine pattern while simplifying the process and work contents by a method wherein part of Mo film formed on the surface of substrate is transformed to molybdenum oxide and is removed by utilizing its heat sublimation property.
CONSTITUTION: A specified thickness of Mo film 2 is formed on the surface of a substrate film or substrate base plate 1 and then is placed in an oxidizing atmosphere containing O2. Then, selected surface part of the Mo film 2 is locally heated and oxidized. This heating, for example, is done with a laser beam. That is, an optical system is used to adjust laser beam 3 to the specified diameter of beam, the laser is projected on the selected surface region 4 of the Mo film 2 to heat the local region 5 within the surface to a specified temperature, for example, to 400°C or more and to transform the local region 5 to molybdenum oxide film 6. The film 6 having heat-sublimation property is removed by vaporization thereby providing the desired pattern 7.
COPYRIGHT: (C)1981,JPO&Japio
JP817880A 1980-01-25 1980-01-25 Pattern formation method Pending JPS56105479A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP817880A JPS56105479A (en) 1980-01-25 1980-01-25 Pattern formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP817880A JPS56105479A (en) 1980-01-25 1980-01-25 Pattern formation method

Publications (1)

Publication Number Publication Date
JPS56105479A true JPS56105479A (en) 1981-08-21

Family

ID=11686053

Family Applications (1)

Application Number Title Priority Date Filing Date
JP817880A Pending JPS56105479A (en) 1980-01-25 1980-01-25 Pattern formation method

Country Status (1)

Country Link
JP (1) JPS56105479A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057935A (en) * 1983-09-09 1985-04-03 Nec Corp Formation of fine pattern
JPS60154619A (en) * 1984-01-24 1985-08-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of etching metal layer
JPS60187026A (en) * 1984-01-24 1985-09-24 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of etching metal layer
JPS60261142A (en) * 1984-06-08 1985-12-24 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS61263188A (en) * 1985-05-16 1986-11-21 富士通株式会社 Pattern formation for cylinder part
JPH02120145A (en) * 1988-10-28 1990-05-08 Isuzu Motors Ltd Brake energy regenerater for vehicle
JPH04188619A (en) * 1990-11-19 1992-07-07 Canon Inc Microscopic working method
JPH04188621A (en) * 1990-11-19 1992-07-07 Canon Inc Optical surface treatment method and device
US5468932A (en) * 1992-02-27 1995-11-21 U.S. Philips Corporation Method of generating a pattern in the surface of a workpiece

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057935A (en) * 1983-09-09 1985-04-03 Nec Corp Formation of fine pattern
JPS60154619A (en) * 1984-01-24 1985-08-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of etching metal layer
JPS60187026A (en) * 1984-01-24 1985-09-24 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of etching metal layer
JPS60261142A (en) * 1984-06-08 1985-12-24 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
JPS61263188A (en) * 1985-05-16 1986-11-21 富士通株式会社 Pattern formation for cylinder part
JPH0341551B2 (en) * 1985-05-16 1991-06-24
JPH02120145A (en) * 1988-10-28 1990-05-08 Isuzu Motors Ltd Brake energy regenerater for vehicle
JPH04188619A (en) * 1990-11-19 1992-07-07 Canon Inc Microscopic working method
JPH04188621A (en) * 1990-11-19 1992-07-07 Canon Inc Optical surface treatment method and device
US5468932A (en) * 1992-02-27 1995-11-21 U.S. Philips Corporation Method of generating a pattern in the surface of a workpiece

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