EP0478072A1 - Verfahren zur Herstellung von Markierungen zum Alignieren von Marken - Google Patents

Verfahren zur Herstellung von Markierungen zum Alignieren von Marken Download PDF

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Publication number
EP0478072A1
EP0478072A1 EP91202419A EP91202419A EP0478072A1 EP 0478072 A1 EP0478072 A1 EP 0478072A1 EP 91202419 A EP91202419 A EP 91202419A EP 91202419 A EP91202419 A EP 91202419A EP 0478072 A1 EP0478072 A1 EP 0478072A1
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EP
European Patent Office
Prior art keywords
oxidation
layer
mask
alignment
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP91202419A
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English (en)
French (fr)
Other versions
EP0478072B1 (de
Inventor
Paulus Société Civile S.P.I.D. van der Plas
Herbert Société Civile S.P.I.D. Lifka
Robertus Société Civile S.P.I.D. Verhaar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
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Publication date
Application filed by Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Philips Gloeilampenfabrieken NV
Publication of EP0478072A1 publication Critical patent/EP0478072A1/de
Application granted granted Critical
Publication of EP0478072B1 publication Critical patent/EP0478072B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/102—Mask alignment

Definitions

  • the present invention relates to a method for producing mask alignment patterns on an active face of a semiconductor substrate according to which at least one layer of an oxidation-resistant material is formed on this active face, then zones are defined by a localized stripping of this layer for isolation by a thick oxide, called field oxide, at the same time as the alignment patterns, and in a subsequent step, the zones for oxide isolation field and said alignment patterns thus delimited, are subjected to thermal oxidation, the rest of the active surface being protected from oxidation by a remaining part of the layer of anti-oxidation material.
  • the alignment patterns are defined at the same time as the isolation zones by field oxide. A relative positioning of these elements is thus obtained which is in accordance with the precision of the apparatus used and therefore free from a possible re-alignment error at this stage.
  • the known method is based on the creation of unevennesses by stripping the alignment patterns using, as mask, parts of field oxide reserved for this purpose.
  • the alignment patterns are then composed of uneven parts (depressions) where the substrate is exposed, and other parts which are covered with the field oxide, which has drawbacks for the formation of the figures. interference with good contrast.
  • the invention therefore aims to provide a method for producing alignment patterns in a limited number of steps, which does not have the drawback mentioned, and the duration of the treatments at high temperature is limited to the minimum required for the realization of the field oxide.
  • a method for producing mask alignment patterns in accordance with the introductory paragraph, which is characterized in that after localized stripping of the layer of anti-oxidation material, and by using of the remaining parts of the anti-oxidation layer as a mask, unevennesses of determined depth are made on the surface of the substrate, at least at locations which contain the alignment patterns, locations called alignment window, in that the surface of the substrate is then exposed inside said windows, and in that finally a thermal oxidation step is carried out for producing the field oxide during which the alignment patterns are simultaneously covered with 'oxide.
  • This method has the advantage of producing alignment patterns protected by an oxide layer of uniform thickness. Furthermore, the remaining parts of the anti-oxidation layer are preserved (outside the alignment windows) and these can be kept when this proves useful in the further development of the devices.
  • the positioning accuracy of the alignment patterns with respect to the field oxide zones is optimal since it results from openings made simultaneously in the anti-oxidation layer.
  • the method is characterized in that said unevennesses are carried out by a specific thermal oxidation step under conditions such that it leads to a conversion into oxide of the semiconductor over a depth equal to said determined depth, and that after having exposed the surface of the semiconductor inside said alignment windows, the oxidation step already mentioned is carried out for the production of the field oxide, which is complementary to the specific oxidation step.
  • the differences in level produced on the surface of the semiconductor have a controllable depth with excellent precision, typically ⁇ 10nm.
  • Said specific thermal oxidation treatment then constitutes a first step in the formation of the field oxide which provides only a fraction of the desired final thickness. After the semiconductor surface has been exposed in said windows alignment, the aforementioned thermal oxidation step, then constitutes an additional oxidation step leading to a field oxide of desired thickness at this stage of the production process, while the alignment patterns are covered an oxide layer of less uniform thickness.
  • a second embodiment of the method according to the invention is characterized in that said unevennesses are produced by selective etching, only in the alignment windows which are delimited by means of a photosensitive resin mask, and in that 'is then removed, in said windows and with the same mask, the remaining parts of the anti-oxidation layer after which the mask of photosensitive resin is removed and a single thermal oxidation step is carried out to produce the oxide of field.
  • the selective pickling producing the unevennesses is obtained by an attack in a plasma or in a selective attack solution preferably at low attack speed to obtain the desired precision of the depth of the unevenness.
  • the photosensitive resin mask does not require rigorous positioning precision since it is sufficient for said alignment windows to include the alignment patterns.
  • the oxidation treatment is then carried out all at once and results in an oxide layer thickness which is the same both on the isolation zones (field oxide) and on the alignment patterns.
  • this embodiment of the method it is also possible to make unevennesses in the isolation zones.
  • This process is characterized by the fact that said unevennesses are produced by selective pickling, using only the anti-oxidation layer as a selective mask, so that it is then removed only in the alignment windows which are then delimited by means of 'a photosensitive resin mask, the remaining parts of the anti-oxidation layer, after which the photosensitive resin mask is removed and a single thermal oxidation step is carried out to produce the field oxide.
  • the field oxide is then embedded in the substrate of a depth corresponding to the unevennesses which can present an advantage for the process of development of the device.
  • the depth of the differences in level is close to 1/4 of the wavelength of the light used for the exploitation of the alignment patterns, in general it is between 100 and 150 nm and preferably equal to 125 nm ⁇ 10 nm.
  • the optical contrast obtained during the subsequent mask alignment operations is the best.
  • a layer 13 of a material resistant to oxidation has been formed on an active face 11 of a semiconductor substrate 12, in particular in monocrystalline silicon.
  • the layer 13 as shown in the figures as being a homogeneous layer, is most often formed of a succession of a thin oxide layer surmounted by a layer of silicon nitride or also formed of a layer of silicon nitride or by successive layers of these materials.
  • the assembly is coated with a mask of photosensitive resin 14 having on the one hand openings 15 corresponding to the location of isolation zones by field oxide, and on the other hand a plurality of openings 17, the together constitutes an alignment pattern for masks 18.
  • the parts of the strain 13 of anti-oxidation material which are located in the openings 15 and 17, are removed by pickling, preferably in a plasma based on fluorine ions or on chlorine ions under conditions which ensure pickling. selective with respect to the substrate or with respect to an oxide sublayer, where appropriate.
  • the anti-oxidation layer can also be selectively etched in a hot phosphoric acid bath.
  • the layer 13 of anti-oxidation material comprises a thin sublayer of silicon oxide, this sublayer may or may not be removed in the openings 15 and 17, which has no significant consequence for the rest of the process.
  • the mask 14 of photosensitive resin is then removed and there remain the openings 17 'and 15' in the layer 13.
  • the semiconductor substrate is subjected to a thermal oxidation treatment in an oven at approximately 1000 "for 40 mm under an atmosphere consisting of a mixture of water vapor and oxygen.
  • a localized oxide layer is formed on the one hand, a layer part 19 corresponding to the location of the isolation zones by field oxide and also localized elements 20 of oxide at the location of the alignment patterns 18.
  • the localized elements 19 and 20 of oxide have a thickness of approximately 280 nm while the difference in level d created by the conversion of the semiconductor to oxide is approximately equal to 125 nm.
  • the thermal oxidation treatment which has just been indicated, is analogous to that which is generally used to produce a field oxide, but in the present case it is a specific step intended to define the patterns of alignment 18 but which at the same time provides a fraction of the final thickness desired for the field oxide.
  • the preceding assembly is coated with another mask 22 of photosensitive resin, provided with windows 28 called “alignment windows” which include the positions of the alignment patterns 18, while the rest of the surface is protected by this mask. 22. Then the surface of the semiconductor in said windows 28 is exposed by selective pickling with respect to silicon, for example, by means of a bath of hot phosphoric acid followed by a bath of buffered hydrofluoric acid. or by plasma etching of fluorine ions or chlorine ions.
  • the positioning of the alignment windows 28 is not necessarily very rigorous because it is the differences in level 23 left by the consumption of semiconductors having served to form the localized elements 20 of silicon oxide which constitute the precise trace. alignment patterns in progress.
  • FIG. 5 shows the result obtained following the operations leading to the simultaneous production of the field oxide and of the mask alignment patterns. These operations consist in removing the mask 22 and subjecting the semiconductor substrate to a second thermal oxidation step at 1000 ° for 75 mm under wet oxygen, making it possible to obtain zones of field oxide 19 ′ of thickness 500 nm as desired for the rest of the process for developing the integrated semiconductor device, while the alignment patterns 18 are oxidized on the surface by the same treatment and thus coated with an oxide layer 24 with a thickness of approximately 410 nm.
  • the alignment patterns 18 consist on the one hand at the surface of the oxide layer 24 by unevennesses 25 whose shape is deduced directly from the unevennesses 23 previously made in the semiconductor material, and on the other hand starts with unevennesses 26 located at the interface between the semiconductor 12 and the localized oxide layer 24, which have been formed by oxidation and are obtained by translation relative to the unevennesses 25.
  • this translation there is a slight widening of the geometry of the unevennesses 26 which is distributed symmetrically with respect to the center of the unevennesses because the oxidation phenomenon can be considered to be perfectly isotropic on this dimension scale.
  • FIGS. 6 to 8 will now be used to describe a second embodiment of the method according to the invention.
  • the steps which have been described in connection with FIGS. 1 and 2 are identical.
  • the assembly After having opened the windows 17 ′ and 15 ′ in the anti-oxidation layer 13 and as indicated in FIG. 6, the assembly is covered with a mask 22 identical in its shape and its nature to the mask 22 described in connection with the figure 4. It therefore has alignment windows 28 which include the alignment patterns 18.
  • the elevations (or depressions) 23 are then hollowed out directly in the semiconductor 12 using the remaining portions 13 'of the layer 13 of anti-oxidation materials, present in said window, depressions practiced over a depth of about 130 nm.
  • the depressions 23 are obtained by selective etching with respect to the mask 22 of photosensitive resin and with respect to the layer 13 'of anti-oxidation materials.
  • a mixture of nitric, hydrofluoric and acetic acids can be used for this purpose.
  • Anisotropic pickling, by plasma, can also be used and the selectivity obtained for example by means of an oxide sublayer situated under the anti-oxidation layer 13.
  • the mask 22 is kept and, in the alignment windows 28, the remaining parts 13 ′ are removed from the anti-layer. oxidation to expose the surface of the semiconductor substrate 12.
  • the second mask 28 is then removed and the assembly is subjected to a thermal oxidation treatment which, in a single step, provides the desired oxide thickness for the isolation by field oxide.
  • Figure 8 shows the result obtained following this step. This result is very comparable to that obtained in the previous example and described in FIG. 4.
  • the localized oxide layer 24 ′ homologous with the layer 24 of FIG. 5 is here of the same thickness as the oxide of field 19 'since these layers are produced during the same oxidation step.
  • the alignment patterns 18 obtained here again have an upper oxide surface which has unevennesses 25 in accordance with the unevennesses 23 made in the previous step on the surface of the semiconductor substrate, as well as unevennesses 26 at the semiconductor interface / oxide and which have geometric and optical properties which are suitable for the precise alignment function of the subsequent masking operations.
  • FIGS. 9 to 11 An alternative embodiment of the method which has just been described is illustrated by means of FIGS. 9 to 11.
  • unevennesses 23 corresponding to the alignment patterns 18, as well as unevennesses 29 corresponding to the zones of isolation by field oxides are produced by selective pickling using only the anti-oxidation layer 13, provided with windows 17 ′ and 15 ′, as a selective mask (see FIG. 9).
  • the mask 22 of photosensitive resin provided with alignment windows 28 is applied only afterwards, FIG. 10, so as to remove the remaining parts 13 ′ of anti-oxidation layer only in said windows 28.
  • the mask 22 is removed and thermal oxidation is carried out in a single step to produce the field oxide 19 ′ in the corresponding zones.
  • the alignment patterns 18 are also oxidized by a layer 24 ′ of the same thickness as the field oxide and which comprises, as in FIG. 8, unevennesses 25 and 26, respectively at the upper surface of the oxide layer 24 ′, and at the interface between this layer and the semiconductor substrate 12.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Element Separation (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
EP91202419A 1990-09-28 1991-09-19 Verfahren zur Herstellung von Markierungen zum Alignieren von Marken Expired - Lifetime EP0478072B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9011979 1990-09-28
FR9011979A FR2667440A1 (fr) 1990-09-28 1990-09-28 Procede pour realiser des motifs d'alignement de masques.

Publications (2)

Publication Number Publication Date
EP0478072A1 true EP0478072A1 (de) 1992-04-01
EP0478072B1 EP0478072B1 (de) 1995-08-02

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EP91202419A Expired - Lifetime EP0478072B1 (de) 1990-09-28 1991-09-19 Verfahren zur Herstellung von Markierungen zum Alignieren von Marken

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US (1) US5316966A (de)
EP (1) EP0478072B1 (de)
JP (1) JPH0744146B2 (de)
KR (1) KR100229560B1 (de)
DE (1) DE69111731T2 (de)
FR (1) FR2667440A1 (de)

Cited By (4)

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Publication number Priority date Publication date Assignee Title
WO1999048149A1 (en) * 1998-03-18 1999-09-23 Advanced Micro Devices, Inc. Stepper alignment mark formation with dual field oxide process
WO2000022675A1 (fr) * 1998-10-14 2000-04-20 Stmicroelectronics Sa Procede de fabrication d'un circuit integre comprenant une zone de marquage
WO2000024057A1 (en) * 1998-10-20 2000-04-27 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device in a silicon body, a surface of said silicon body being provided with a grating and an at least partially recessed oxide pattern
WO2001024250A1 (en) * 1999-09-30 2001-04-05 Koninklijke Philips Electronics N.V. Devices with graded top oxide and graded drift region

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US5858854A (en) * 1996-10-16 1999-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method for forming high contrast alignment marks
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US5936311A (en) * 1996-12-31 1999-08-10 Intel Corporation Integrated circuit alignment marks distributed throughout a surface metal line
US5956564A (en) 1997-06-03 1999-09-21 Ultratech Stepper, Inc. Method of making a side alignment mark
US6306727B1 (en) 1997-08-18 2001-10-23 Micron Technology, Inc. Advanced isolation process for large memory arrays
JP4187808B2 (ja) 1997-08-25 2008-11-26 株式会社ルネサステクノロジ 半導体装置の製造方法
US6303460B1 (en) 2000-02-07 2001-10-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
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US5966618A (en) * 1998-03-06 1999-10-12 Advanced Micro Devices, Inc. Method of forming dual field isolation structures
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US6043133A (en) * 1998-07-24 2000-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method of photo alignment for shallow trench isolation chemical-mechanical polishing
US6303458B1 (en) 1998-10-05 2001-10-16 Chartered Semiconductor Manufacturing Ltd. Alignment mark scheme for Sti process to save one mask step
US6054361A (en) * 1999-02-11 2000-04-25 Chartered Semiconductor Manufacturing, Ltd. Preserving the zero mark for wafer alignment
US7057299B2 (en) * 2000-02-03 2006-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Alignment mark configuration
JP3970546B2 (ja) * 2001-04-13 2007-09-05 沖電気工業株式会社 半導体装置及び半導体装置の製造方法
US6500725B1 (en) * 2001-09-06 2002-12-31 Taiwan Semiconductor Manufacturing Company, Ltd Microelectronic fabrication method providing alignment mark and isolation trench of identical depth
US6623911B1 (en) 2001-09-17 2003-09-23 Taiwan Semiconductor Manufacturing Company Method to form code marks on mask ROM products
US20030109113A1 (en) * 2001-12-07 2003-06-12 Wen-Ying Wen Method of making identification code of ROM and structure thereof
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999048149A1 (en) * 1998-03-18 1999-09-23 Advanced Micro Devices, Inc. Stepper alignment mark formation with dual field oxide process
US6249036B1 (en) 1998-03-18 2001-06-19 Advanced Micro Devices, Inc. Stepper alignment mark formation with dual field oxide process
WO2000022675A1 (fr) * 1998-10-14 2000-04-20 Stmicroelectronics Sa Procede de fabrication d'un circuit integre comprenant une zone de marquage
WO2000024057A1 (en) * 1998-10-20 2000-04-27 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device in a silicon body, a surface of said silicon body being provided with a grating and an at least partially recessed oxide pattern
WO2001024250A1 (en) * 1999-09-30 2001-04-05 Koninklijke Philips Electronics N.V. Devices with graded top oxide and graded drift region

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Publication number Publication date
DE69111731T2 (de) 1996-03-21
EP0478072B1 (de) 1995-08-02
US5316966A (en) 1994-05-31
JPH04234108A (ja) 1992-08-21
KR920007141A (ko) 1992-04-28
FR2667440A1 (fr) 1992-04-03
JPH0744146B2 (ja) 1995-05-15
DE69111731D1 (de) 1995-09-07
KR100229560B1 (ko) 1999-11-15

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