EA200100030A1 - Возбуждение затвора для мощных полупроводниковых приборов с изолированным затвором - Google Patents

Возбуждение затвора для мощных полупроводниковых приборов с изолированным затвором

Info

Publication number
EA200100030A1
EA200100030A1 EA200100030A EA200100030A EA200100030A1 EA 200100030 A1 EA200100030 A1 EA 200100030A1 EA 200100030 A EA200100030 A EA 200100030A EA 200100030 A EA200100030 A EA 200100030A EA 200100030 A1 EA200100030 A1 EA 200100030A1
Authority
EA
Eurasian Patent Office
Prior art keywords
current
voltage
drain
shutter
igbts
Prior art date
Application number
EA200100030A
Other languages
English (en)
Inventor
Грегори Крэйг Вэллэйс
Original Assignee
Саут Айлэнд Дискритс Лимитед
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Саут Айлэнд Дискритс Лимитед filed Critical Саут Айлэнд Дискритс Лимитед
Publication of EA200100030A1 publication Critical patent/EA200100030A1/ru

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K4/00—Generating pulses having essentially a finite slope or stepped portions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

Способ управления переходными процессами переключения тока и напряжения в полупроводниковых приборах с изолированным затвором, конкретнее в полевых МОП транзисторах и биполярных транзисторных приборах с изолированным затвором (БТИЗ). Полевые МОП транзисторы и БТИЗ используются в источниках питания с режимом переключения из-за их легкой управляемости и их способности работать с сильными токами и высокими напряжениями на высоких частотах переключения. Однако переходные процессы переключения для обоих типов устройств ответственны как за электромагнитные излучения синфазного режима, генерируемые колебанием стокового тока, так и за потери мощности в ячейке коммутации. Эти две характеристики представляют противоположные конструктивные задачи для мощных преобразователей. Настоящее изобретение использует гибридный источник сигнала затвора напряжения/тока с обратной связью тока заряда (или разряда) затвора для динамического и независимого управления стоковым током и стоковым напряжением в полупроводниковом приборе с изолированным затвором. Скорость изменения стокового тока управляется источником напряжения, пересекающим кривую активной проводимости, тогда как скорость изменения стокового напряжения управляется динамическими изменениями в источнике тока из-за обратной связи.Международная заявка была опубликована вместе с отчетом о международном поиске.
EA200100030A 1998-06-12 1999-06-11 Возбуждение затвора для мощных полупроводниковых приборов с изолированным затвором EA200100030A1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NZ33068798 1998-06-12
PCT/NZ1999/000082 WO1999065144A1 (en) 1998-06-12 1999-06-11 Gate drive for insulated gate power semiconductors

Publications (1)

Publication Number Publication Date
EA200100030A1 true EA200100030A1 (ru) 2001-06-25

Family

ID=19926772

Family Applications (1)

Application Number Title Priority Date Filing Date
EA200100030A EA200100030A1 (ru) 1998-06-12 1999-06-11 Возбуждение затвора для мощных полупроводниковых приборов с изолированным затвором

Country Status (12)

Country Link
US (1) US6556062B1 (ru)
EP (1) EP1105970B1 (ru)
JP (1) JP2002518868A (ru)
KR (1) KR20010071460A (ru)
CN (1) CN1312973A (ru)
AT (1) ATE254357T1 (ru)
AU (1) AU4535799A (ru)
CA (1) CA2335124A1 (ru)
EA (1) EA200100030A1 (ru)
HK (1) HK1038447A1 (ru)
WO (1) WO1999065144A1 (ru)
ZA (1) ZA200100189B (ru)

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DE60120150T2 (de) * 2001-07-26 2007-05-10 Ami Semiconductor Belgium Bvba EMV gerechter Spannungsregler mit kleiner Verlustspannung
CN100442663C (zh) * 2002-11-18 2008-12-10 Nxp股份有限公司 具有可控转换速率的接通总线发送器
US7737666B2 (en) * 2003-08-04 2010-06-15 Marvell World Trade Ltd. Split gate drive scheme to improve reliable voltage operation range
GB2417149A (en) * 2004-08-12 2006-02-15 Bombardier Transp Gmbh Digital adaptive control of IGBT or MOS gate charging current in a converter for a railway traction motor
FR2874767B1 (fr) * 2004-08-27 2006-10-20 Schneider Toshiba Inverter Dispositif de commande d'un transistor de puissance
DE102006015024B3 (de) * 2006-03-31 2007-09-06 Infineon Technologies Ag Treiberschaltung zum Bereitstellen eines Ausgangssignals
US7285876B1 (en) 2006-05-01 2007-10-23 Raytheon Company Regenerative gate drive circuit for power MOSFET
GB0617990D0 (en) * 2006-09-13 2006-10-18 Palmer Patrick R Control of power semiconductor devices
CN101135718B (zh) * 2007-09-10 2010-06-02 中兴通讯股份有限公司 一种驱动器电路
JP5119894B2 (ja) * 2007-12-06 2013-01-16 富士電機株式会社 ドライバ回路
CN101697454B (zh) * 2009-10-30 2011-09-14 北京航星力源科技有限公司 绝缘栅器件的栅极驱动电路
JP6504832B2 (ja) 2014-01-28 2019-04-24 ゼネラル・エレクトリック・カンパニイ 統合された取り付けおよび冷却の装置、電子装置、および車両
US9425786B2 (en) 2014-11-17 2016-08-23 General Electric Company System and method for driving a power switch
US10073512B2 (en) 2014-11-19 2018-09-11 General Electric Company System and method for full range control of dual active bridge
CN105226919B (zh) * 2015-11-04 2018-06-26 广州金升阳科技有限公司 一种功率mosfet的软驱动方法及电路
DE102015221636A1 (de) * 2015-11-04 2017-05-04 Robert Bosch Gmbh Verfahren zum Betreiben eines Metall-Oxid-Halbleiter-Feldeffekttransistors
US10071652B2 (en) * 2016-05-11 2018-09-11 Ford Global Technologies, Llc Dual mode IGBT gate drive to reduce switching loss
IT201600119626A1 (it) 2016-11-25 2018-05-25 St Microelectronics Srl Circuito di pilotaggio, dispositivo, apparecchiatura e procedimento corrispondenti
US10483868B2 (en) * 2017-02-16 2019-11-19 Dell Products, Lp Power supply unit with re-rush current limiting
JP2022117063A (ja) * 2021-01-29 2022-08-10 マツダ株式会社 負荷駆動制御装置

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Also Published As

Publication number Publication date
HK1038447A1 (zh) 2002-03-15
KR20010071460A (ko) 2001-07-28
ATE254357T1 (de) 2003-11-15
EP1105970B1 (en) 2003-11-12
EP1105970A4 (en) 2001-06-13
EP1105970A1 (en) 2001-06-13
ZA200100189B (en) 2003-04-08
CN1312973A (zh) 2001-09-12
CA2335124A1 (en) 1999-12-16
JP2002518868A (ja) 2002-06-25
WO1999065144A1 (en) 1999-12-16
AU4535799A (en) 1999-12-30
US6556062B1 (en) 2003-04-29

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