DK1564595T3 - Sammensætning til rensning af mikroelektroniske substrater indeholdende halogen-oxygen-syrer - Google Patents
Sammensætning til rensning af mikroelektroniske substrater indeholdende halogen-oxygen-syrerInfo
- Publication number
- DK1564595T3 DK1564595T3 DK05250042.8T DK05250042T DK1564595T3 DK 1564595 T3 DK1564595 T3 DK 1564595T3 DK 05250042 T DK05250042 T DK 05250042T DK 1564595 T3 DK1564595 T3 DK 1564595T3
- Authority
- DK
- Denmark
- Prior art keywords
- microelectronic
- purifying
- composition
- microelectronic substrates
- cleaning compositions
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54380104P | 2004-02-11 | 2004-02-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
DK1564595T3 true DK1564595T3 (da) | 2010-01-18 |
Family
ID=34700209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK05250042.8T DK1564595T3 (da) | 2004-02-11 | 2005-01-07 | Sammensætning til rensning af mikroelektroniske substrater indeholdende halogen-oxygen-syrer |
Country Status (19)
Country | Link |
---|---|
US (1) | US7521406B2 (da) |
EP (1) | EP1564595B1 (da) |
JP (3) | JP4208826B2 (da) |
KR (2) | KR101316993B1 (da) |
CN (3) | CN1954267B (da) |
AT (1) | ATE449362T1 (da) |
BR (1) | BRPI0418529A (da) |
CA (1) | CA2555665C (da) |
DE (1) | DE602005017684D1 (da) |
DK (1) | DK1564595T3 (da) |
ES (1) | ES2334359T3 (da) |
IL (1) | IL177305A (da) |
NO (1) | NO20064056L (da) |
PL (1) | PL1564595T3 (da) |
PT (1) | PT1564595E (da) |
SG (1) | SG150508A1 (da) |
TW (1) | TWI318238B (da) |
WO (1) | WO2005083523A1 (da) |
ZA (1) | ZA200606544B (da) |
Families Citing this family (56)
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BRPI0413657A (pt) * | 2003-08-19 | 2006-10-24 | Mallinckrodt Baker Inc | Composição aquosa, isenta de silicato, para limpeza de substratos microeletrÈnicos, bem como processo para limpeza de um substrato microeletrÈnico sem produzir qualquer corrosão metálica substancial |
US7192910B2 (en) * | 2003-10-28 | 2007-03-20 | Sachem, Inc. | Cleaning solutions and etchants and methods for using same |
CN1954267B (zh) | 2004-02-11 | 2010-12-08 | 马林克罗特贝克公司 | 含有卤素含氧酸、其盐及其衍生物的微电子清洗组合物 |
US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
US20060154186A1 (en) * | 2005-01-07 | 2006-07-13 | Advanced Technology Materials, Inc. | Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings |
US7867779B2 (en) | 2005-02-03 | 2011-01-11 | Air Products And Chemicals, Inc. | System and method comprising same for measurement and/or analysis of particles in gas stream |
CN101248516A (zh) * | 2005-04-08 | 2008-08-20 | 塞克姆公司 | 金属氮化物的选择性湿蚀刻 |
US8772214B2 (en) * | 2005-10-14 | 2014-07-08 | Air Products And Chemicals, Inc. | Aqueous cleaning composition for removing residues and method using same |
US7977228B2 (en) * | 2006-06-29 | 2011-07-12 | Intel Corporation | Methods for the formation of interconnects separated by air gaps |
WO2008039730A1 (en) * | 2006-09-25 | 2008-04-03 | Advanced Technology Materials, Inc. | Compositions and methods for the removal of photoresist for a wafer rework application |
WO2008090418A1 (en) * | 2007-01-22 | 2008-07-31 | Freescale Semiconductor, Inc. | Liquid cleaning composition and method for cleaning semiconductor devices |
US20090241988A1 (en) * | 2008-03-31 | 2009-10-01 | Intel Corporation | Photoresist and antireflective layer removal solution and method thereof |
WO2009135102A2 (en) * | 2008-05-01 | 2009-11-05 | Advanced Technology Materials, Inc. | Low ph mixtures for the removal of high density implanted resist |
KR101831452B1 (ko) * | 2009-02-25 | 2018-02-22 | 아반토 퍼포먼스 머티리얼즈, 엘엘씨 | 다목적 산성, 유기 용매 기반의 마이크로전자 세정 조성물 |
US8497233B2 (en) | 2009-02-25 | 2013-07-30 | Avantor Performance Materials, Inc. | Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers |
US20120100721A1 (en) * | 2009-06-25 | 2012-04-26 | Lam Research Ag | Method for treating a semiconductor wafer |
JP2012531735A (ja) * | 2009-06-25 | 2012-12-10 | ラム・リサーチ・アーゲー | 半導体ウエハを処理するための方法 |
US7994062B2 (en) * | 2009-10-30 | 2011-08-09 | Sachem, Inc. | Selective silicon etch process |
JP2011179085A (ja) * | 2010-03-02 | 2011-09-15 | C Uyemura & Co Ltd | 電気めっき用前処理剤、電気めっきの前処理方法及び電気めっき方法 |
US20110253171A1 (en) * | 2010-04-15 | 2011-10-20 | John Moore | Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication |
SG189292A1 (en) | 2010-10-06 | 2013-05-31 | Advanced Tech Materials | Composition and process for selectively etching metal nitrides |
CN102199499B (zh) * | 2011-04-02 | 2013-01-16 | 浙江向日葵光能科技股份有限公司 | 太阳能电池硅片清洗剂及其使用方法 |
EP2557147B1 (en) * | 2011-08-09 | 2015-04-01 | Basf Se | Aqueous alkaline compositions and method for treating the surface of silicon substrates |
US9257270B2 (en) * | 2011-08-15 | 2016-02-09 | Ekc Technology | Method and composition for removing resist, etch residue, and copper oxide from substrates having copper, metal hardmask and low-k dielectric material |
CN104487900B (zh) * | 2012-05-18 | 2019-07-23 | 恩特格里斯公司 | 用于从包括氮化钛的表面剥离光致抗蚀剂的组合物和方法 |
JP6157081B2 (ja) * | 2012-09-24 | 2017-07-05 | 東京応化工業株式会社 | フォトリソグラフィ用剥離液、及びパターン形成方法 |
JP6029419B2 (ja) * | 2012-11-02 | 2016-11-24 | ダイキン工業株式会社 | 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法 |
CN103809394B (zh) * | 2012-11-12 | 2019-12-31 | 安集微电子科技(上海)股份有限公司 | 一种去除光阻蚀刻残留物的清洗液 |
US9765288B2 (en) | 2012-12-05 | 2017-09-19 | Entegris, Inc. | Compositions for cleaning III-V semiconductor materials and methods of using same |
CN103275823A (zh) * | 2013-05-29 | 2013-09-04 | 苏州康和顺医疗技术有限公司 | 一种用于全自动生化分析仪的清洗剂及其制备方法 |
CN105683336A (zh) * | 2013-06-06 | 2016-06-15 | 高级技术材料公司 | 用于选择性蚀刻氮化钛的组合物和方法 |
KR102340516B1 (ko) | 2013-08-30 | 2021-12-21 | 엔테그리스, 아이엔씨. | 티타늄 니트라이드를 선택적으로 에칭하기 위한 조성물 및 방법 |
US9957469B2 (en) | 2014-07-14 | 2018-05-01 | Versum Materials Us, Llc | Copper corrosion inhibition system |
WO2016076032A1 (ja) * | 2014-11-13 | 2016-05-19 | 三菱瓦斯化学株式会社 | タンタルを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた洗浄方法 |
JP6217659B2 (ja) * | 2015-01-28 | 2017-10-25 | ダイキン工業株式会社 | 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法 |
CN109642159B (zh) * | 2016-03-24 | 2022-02-15 | 安万托特性材料有限公司 | 非水性钨相容性金属氮化物选择性蚀刻剂和清洁剂 |
CN107357143B (zh) | 2017-07-25 | 2018-06-19 | 上海新阳半导体材料股份有限公司 | 一种清洗剂、其制备方法和应用 |
US11353794B2 (en) * | 2017-12-22 | 2022-06-07 | Versum Materials Us, Llc | Photoresist stripper |
CN109980174A (zh) * | 2017-12-27 | 2019-07-05 | 中国电子科技集团公司第十八研究所 | 提高电池热熔性聚合物铜箔表面附着力方法及表面处理剂 |
JP6798045B2 (ja) | 2018-01-16 | 2020-12-09 | 株式会社トクヤマ | 次亜塩素酸イオンを含む半導体ウェハの処理液 |
US20210196749A1 (en) * | 2018-04-12 | 2021-07-01 | Briotech, Inc. | Aqueous hypohalous acid preparations for the inactivation of resistant infectious agents |
CN117567296A (zh) * | 2018-05-23 | 2024-02-20 | 株式会社德山 | 次氯酸季烷基铵溶液的制造方法以及半导体晶圆的处理方法 |
JP6901998B2 (ja) * | 2018-06-15 | 2021-07-14 | 株式会社トクヤマ | 4級アルキルアンモニウムイオン、亜塩素酸イオン、及び次亜塩素酸イオンを含む酸化性組成物 |
KR102683037B1 (ko) * | 2018-09-06 | 2024-07-09 | 후지필름 가부시키가이샤 | 약액, 기판의 처리 방법 |
JP7219061B2 (ja) * | 2018-11-14 | 2023-02-07 | 関東化学株式会社 | ルテニウム除去用組成物 |
JPWO2020166676A1 (ja) * | 2019-02-13 | 2021-12-16 | 株式会社トクヤマ | 次亜塩素酸イオン、及びpH緩衝剤を含む半導体ウェハの処理液 |
KR20210063248A (ko) * | 2019-11-22 | 2021-06-01 | 가부시끼가이샤 도꾸야마 | 차아염소산 제 4 급 알킬암모늄 용액, 그 제조 방법 및 반도체 웨이퍼의 처리 방법 |
TW202200843A (zh) * | 2020-02-25 | 2022-01-01 | 日商德山股份有限公司 | 釕之半導體用處理液 |
JPWO2021201094A1 (da) * | 2020-03-31 | 2021-10-07 | ||
JP7031073B1 (ja) * | 2020-04-17 | 2022-03-07 | 株式会社トクヤマ | ハロゲン酸素酸溶液の製造方法 |
KR20220000375A (ko) | 2020-06-25 | 2022-01-03 | 가부시끼가이샤 도꾸야마 | 할로겐 산소산 용액의 제조 방법 및 제조 장치 |
JPWO2022030628A1 (da) * | 2020-08-07 | 2022-02-10 | ||
JPWO2022114036A1 (da) * | 2020-11-26 | 2022-06-02 | ||
JP2024503424A (ja) * | 2021-01-19 | 2024-01-25 | ラム リサーチ コーポレーション | 金属エッチング残渣を有するチャンバの構成要素を洗浄する方法 |
KR20220150134A (ko) * | 2021-05-03 | 2022-11-10 | 삼성전자주식회사 | 포토레지스트 박리 조성물과 이를 이용하는 반도체 소자 및 반도체 패키지의 제조 방법 |
US20240116849A1 (en) * | 2021-06-07 | 2024-04-11 | Tokuyama Corporation | Method of manufacturing halogen oxoacid and manufacturing apparatus therefor |
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US2256958A (en) | 1939-05-13 | 1941-09-23 | Pittsburgh Plate Glass Co | Quaternary ammonium hypohalites and method of making same |
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DE3308850C2 (de) * | 1983-03-12 | 1985-03-07 | B. Braun Melsungen Ag, 3508 Melsungen | Bleich-, Reinigungs- und Desinfektionsmittel auf Hypohalitbasis mit verbesserter Lagerstabilität |
US4642221A (en) * | 1983-07-05 | 1987-02-10 | Atlantic Richfield Company | Method and composition for inhibiting corrosion in aqueous heat transfer systems |
US5364961A (en) | 1992-06-15 | 1994-11-15 | Monsanto Company | Process for making optically active α-amino ketones |
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JPH0959276A (ja) * | 1995-08-11 | 1997-03-04 | Kumiai Chem Ind Co Ltd | 縮合ヘテロ環誘導体及び除草剤 |
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US5889161A (en) * | 1998-05-13 | 1999-03-30 | Sri International | N,N'-azobis-nitroazoles and analogs thereof as igniter compounds for use in energetic compositions |
JP2000056478A (ja) | 1998-08-04 | 2000-02-25 | Showa Denko Kk | サイドウォール除去液 |
DE69942615D1 (de) * | 1998-10-23 | 2010-09-02 | Fujifilm Electronic Materials | Eine chemisch-mechanisch polierende aufschlämmung, eine beschleunigerlösung enthaltend |
JP4224652B2 (ja) * | 1999-03-08 | 2009-02-18 | 三菱瓦斯化学株式会社 | レジスト剥離液およびそれを用いたレジストの剥離方法 |
MY143399A (en) | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
JP3832399B2 (ja) * | 2001-08-28 | 2006-10-11 | 栗田工業株式会社 | 殺菌殺藻剤組成物及び水系の殺菌殺藻方法 |
JP2003119494A (ja) | 2001-10-05 | 2003-04-23 | Nec Corp | 洗浄組成物およびこれを用いた洗浄方法と洗浄装置 |
KR20030082767A (ko) * | 2002-04-18 | 2003-10-23 | 주식회사 덕성 | 수용액에서의 전해질의 전기전도도가 높은 물질을 이용한레지스트 박리액 조성물 |
JP4267359B2 (ja) | 2002-04-26 | 2009-05-27 | 花王株式会社 | レジスト用剥離剤組成物 |
CA2488737A1 (en) | 2002-06-07 | 2003-12-18 | Mallinckrodt Baker, Inc. | Microelectronic cleaning and arc remover compositions |
JP4304154B2 (ja) * | 2002-06-07 | 2009-07-29 | マリンクロッド・ベイカー・インコーポレイテッド | 酸化剤および有機溶媒を含有するマイクロエレクトロニクス洗浄組成物 |
CN1954267B (zh) | 2004-02-11 | 2010-12-08 | 马林克罗特贝克公司 | 含有卤素含氧酸、其盐及其衍生物的微电子清洗组合物 |
-
2004
- 2004-11-05 CN CN2004800416026A patent/CN1954267B/zh active Active
- 2004-11-05 WO PCT/US2004/037135 patent/WO2005083523A1/en active Application Filing
- 2004-11-05 BR BRPI0418529-3A patent/BRPI0418529A/pt not_active IP Right Cessation
- 2004-11-05 SG SG200900977-0A patent/SG150508A1/en unknown
- 2004-11-05 CA CA2555665A patent/CA2555665C/en not_active Expired - Fee Related
- 2004-11-05 US US10/982,330 patent/US7521406B2/en active Active
- 2004-11-05 CN CN2009101666536A patent/CN101923294B/zh active Active
- 2004-11-05 CN CN2009101666540A patent/CN101833251B/zh active Active
- 2004-11-15 TW TW093134956A patent/TWI318238B/zh active
- 2004-12-01 KR KR1020040100040A patent/KR101316993B1/ko active IP Right Grant
- 2004-12-02 JP JP2004349905A patent/JP4208826B2/ja not_active Expired - Fee Related
-
2005
- 2005-01-07 PT PT05250042T patent/PT1564595E/pt unknown
- 2005-01-07 AT AT05250042T patent/ATE449362T1/de active
- 2005-01-07 EP EP05250042A patent/EP1564595B1/en not_active Not-in-force
- 2005-01-07 DK DK05250042.8T patent/DK1564595T3/da active
- 2005-01-07 DE DE602005017684T patent/DE602005017684D1/de active Active
- 2005-01-07 ES ES05250042T patent/ES2334359T3/es active Active
- 2005-01-07 PL PL05250042T patent/PL1564595T3/pl unknown
-
2006
- 2006-08-06 IL IL177305A patent/IL177305A/en active IP Right Grant
- 2006-08-07 ZA ZA200606544A patent/ZA200606544B/xx unknown
- 2006-09-08 NO NO20064056A patent/NO20064056L/no not_active Application Discontinuation
-
2008
- 2008-01-11 JP JP2008004627A patent/JP4393553B2/ja not_active Expired - Fee Related
- 2008-01-11 JP JP2008004620A patent/JP2008156654A/ja active Pending
-
2013
- 2013-05-27 KR KR1020130059576A patent/KR20130086326A/ko not_active Application Discontinuation
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