DK1105778T3 - Silikatholdige alkaliske sammensætninger til rensning af mikorelektroniske substrater - Google Patents
Silikatholdige alkaliske sammensætninger til rensning af mikorelektroniske substraterInfo
- Publication number
- DK1105778T3 DK1105778T3 DK99925649T DK99925649T DK1105778T3 DK 1105778 T3 DK1105778 T3 DK 1105778T3 DK 99925649 T DK99925649 T DK 99925649T DK 99925649 T DK99925649 T DK 99925649T DK 1105778 T3 DK1105778 T3 DK 1105778T3
- Authority
- DK
- Denmark
- Prior art keywords
- optionally
- weight
- water
- silicate
- substrates
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 title abstract 2
- 238000000746 purification Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000002738 chelating agent Substances 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- 239000003381 stabilizer Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/0005—Other compounding ingredients characterised by their effect
- C11D3/0073—Anticorrosion compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/08—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
- C11D3/364—Organic compounds containing phosphorus containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/14—Cleaning or pickling metallic material with solutions or molten salts with alkaline solutions
- C23G1/22—Light metals
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Silicates, Zeolites, And Molecular Sieves (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8586198P | 1998-05-18 | 1998-05-18 | |
US11508499P | 1999-01-07 | 1999-01-07 | |
PCT/US1999/010875 WO1999060448A1 (en) | 1998-05-18 | 1999-05-17 | Silicate-containing alkaline compositions for cleaning microelectronic substrates |
Publications (1)
Publication Number | Publication Date |
---|---|
DK1105778T3 true DK1105778T3 (da) | 2009-10-19 |
Family
ID=26773172
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK99925649T DK1105778T3 (da) | 1998-05-18 | 1999-05-17 | Silikatholdige alkaliske sammensætninger til rensning af mikorelektroniske substrater |
Country Status (17)
Country | Link |
---|---|
US (2) | US6465403B1 (da) |
EP (1) | EP1105778B1 (da) |
KR (1) | KR100610387B1 (da) |
CN (1) | CN100370360C (da) |
AT (1) | ATE436043T1 (da) |
AU (1) | AU4189599A (da) |
CA (1) | CA2330747C (da) |
DE (1) | DE69941088D1 (da) |
DK (1) | DK1105778T3 (da) |
ES (1) | ES2328309T3 (da) |
HK (1) | HK1039806B (da) |
IL (1) | IL139546A (da) |
MX (1) | MXPA00011391A (da) |
MY (1) | MY121446A (da) |
PT (1) | PT1105778E (da) |
TW (1) | TWI226520B (da) |
WO (1) | WO1999060448A1 (da) |
Families Citing this family (153)
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US6896826B2 (en) | 1997-01-09 | 2005-05-24 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
US6755989B2 (en) * | 1997-01-09 | 2004-06-29 | Advanced Technology Materials, Inc. | Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
KR100610387B1 (ko) | 1998-05-18 | 2006-08-09 | 말린크로트 베이커, 인코포레이티드 | 초소형 전자 기판 세정용 실리케이트 함유 알칼리성 조성물 |
US6348239B1 (en) * | 2000-04-28 | 2002-02-19 | Simon Fraser University | Method for depositing metal and metal oxide films and patterned films |
US7135445B2 (en) * | 2001-12-04 | 2006-11-14 | Ekc Technology, Inc. | Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials |
US7579308B2 (en) * | 1998-07-06 | 2009-08-25 | Ekc/Dupont Electronics Technologies | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
US6436300B2 (en) | 1998-07-30 | 2002-08-20 | Motorola, Inc. | Method of manufacturing electronic components |
US7064070B2 (en) * | 1998-09-28 | 2006-06-20 | Tokyo Electron Limited | Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process |
TW467953B (en) * | 1998-11-12 | 2001-12-11 | Mitsubishi Gas Chemical Co | New detergent and cleaning method of using it |
US7348300B2 (en) | 1999-05-04 | 2008-03-25 | Air Products And Chemicals, Inc. | Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture |
US20040029395A1 (en) * | 2002-08-12 | 2004-02-12 | Peng Zhang | Process solutions containing acetylenic diol surfactants |
US7129199B2 (en) | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
US7208049B2 (en) * | 2003-10-20 | 2007-04-24 | Air Products And Chemicals, Inc. | Process solutions containing surfactants used as post-chemical mechanical planarization treatment |
US7521405B2 (en) | 2002-08-12 | 2009-04-21 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
US6492308B1 (en) * | 1999-11-16 | 2002-12-10 | Esc, Inc. | Post chemical-mechanical planarization (CMP) cleaning composition |
TW558736B (en) * | 2000-02-26 | 2003-10-21 | Shipley Co Llc | Method of reducing defects |
MY129673A (en) | 2000-03-20 | 2007-04-30 | Avantor Performance Mat Inc | Method and composition for removing sodium-containing material from microcircuit substrates |
US6899818B2 (en) * | 2000-03-20 | 2005-05-31 | Mallinckrodt Inc. | Method and composition for removing sodium-containing material from microcircuit substrates |
BR0003706A (pt) * | 2000-05-30 | 2002-02-13 | Tecsis Tecnologia E Sist S Ava | Pá para ventilador axial de baixo ruìdo e alta eficiência |
KR100363271B1 (ko) * | 2000-06-12 | 2002-12-05 | 주식회사 동진쎄미켐 | 포토레지스트 리무버 조성물 |
WO2001097268A1 (fr) * | 2000-06-16 | 2001-12-20 | Kao Corporation | Composion detergente |
US6310019B1 (en) * | 2000-07-05 | 2001-10-30 | Wako Pure Chemical Industries, Ltd. | Cleaning agent for a semi-conductor substrate |
US6498131B1 (en) | 2000-08-07 | 2002-12-24 | Ekc Technology, Inc. | Composition for cleaning chemical mechanical planarization apparatus |
US6599370B2 (en) * | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
JP4572466B2 (ja) * | 2000-12-27 | 2010-11-04 | 東ソー株式会社 | レジスト剥離剤 |
KR100822236B1 (ko) * | 2000-11-30 | 2008-04-16 | 토소가부시키가이샤 | 레지스트 박리제 |
JP2002318455A (ja) * | 2001-04-23 | 2002-10-31 | Tosoh Corp | 安定化方法 |
JP4015823B2 (ja) | 2001-05-14 | 2007-11-28 | 株式会社東芝 | アルカリ現像液の製造方法,アルカリ現像液,パターン形成方法,レジスト膜の剥離方法,及び薬液塗布装置 |
MY143399A (en) | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
MY131912A (en) * | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
MY139607A (en) * | 2001-07-09 | 2009-10-30 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
TWI276682B (en) * | 2001-11-16 | 2007-03-21 | Mitsubishi Chem Corp | Substrate surface cleaning liquid mediums and cleaning method |
KR100449054B1 (ko) * | 2001-12-22 | 2004-09-16 | 주식회사 동진쎄미켐 | 선택비를 향상시킨 화학 기계적 연마 슬러리 조성물 및이를 이용한 반도체 소자의 평탄화 방법 |
US20030148624A1 (en) * | 2002-01-31 | 2003-08-07 | Kazuto Ikemoto | Method for removing resists |
WO2003091376A1 (en) * | 2002-04-24 | 2003-11-06 | Ekc Technology, Inc. | Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces |
WO2003104900A2 (en) * | 2002-06-07 | 2003-12-18 | Mallinckrodt Baker Inc. | Microelectronic cleaning compositions containing oxidizers and organic solvents |
US7393819B2 (en) | 2002-07-08 | 2008-07-01 | Mallinckrodt Baker, Inc. | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
JP4086567B2 (ja) * | 2002-07-10 | 2008-05-14 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
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US6905974B2 (en) * | 2002-08-08 | 2005-06-14 | Micron Technology, Inc. | Methods using a peroxide-generating compound to remove group VIII metal-containing residue |
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US7524771B2 (en) * | 2002-10-29 | 2009-04-28 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing method using alkaline solution and acid solution |
US7276454B2 (en) * | 2002-11-02 | 2007-10-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Application of impressed-current cathodic protection to prevent metal corrosion and oxidation |
JP2006505132A (ja) * | 2002-11-05 | 2006-02-09 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング | 半導体の表面処理およびそれに使用される混合物 |
EP1562225A4 (en) * | 2002-11-08 | 2007-04-18 | Wako Pure Chem Ind Ltd | CLEANING COMPOSITION AND METHOD FOR CLEANING WITH THE COMPOSITION |
US8236485B2 (en) | 2002-12-20 | 2012-08-07 | Advanced Technology Materials, Inc. | Photoresist removal |
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- 1999-05-17 MX MXPA00011391A patent/MXPA00011391A/es not_active IP Right Cessation
- 1999-05-17 PT PT99925649T patent/PT1105778E/pt unknown
- 1999-05-17 AT AT99925649T patent/ATE436043T1/de active
- 1999-05-17 AU AU41895/99A patent/AU4189599A/en not_active Abandoned
- 1999-05-17 DE DE69941088T patent/DE69941088D1/de not_active Expired - Lifetime
- 1999-05-17 CN CNB998088013A patent/CN100370360C/zh not_active Expired - Lifetime
- 1999-05-17 US US09/701,114 patent/US6465403B1/en not_active Expired - Lifetime
- 1999-05-17 EP EP99925649A patent/EP1105778B1/en not_active Expired - Lifetime
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- 1999-05-17 WO PCT/US1999/010875 patent/WO1999060448A1/en active IP Right Grant
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- 1999-05-17 DK DK99925649T patent/DK1105778T3/da active
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IL139546A0 (en) | 2002-02-10 |
IL139546A (en) | 2005-08-31 |
HK1039806A1 (en) | 2002-05-10 |
TWI226520B (en) | 2005-01-11 |
ATE436043T1 (de) | 2009-07-15 |
KR100610387B1 (ko) | 2006-08-09 |
CN100370360C (zh) | 2008-02-20 |
CA2330747A1 (en) | 1999-11-25 |
DE69941088D1 (de) | 2009-08-20 |
HK1039806B (zh) | 2008-12-19 |
US6465403B1 (en) | 2002-10-15 |
ES2328309T3 (es) | 2009-11-11 |
WO1999060448A1 (en) | 1999-11-25 |
MXPA00011391A (es) | 2005-06-20 |
EP1105778B1 (en) | 2009-07-08 |
PT1105778E (pt) | 2009-09-23 |
AU4189599A (en) | 1999-12-06 |
EP1105778A1 (en) | 2001-06-13 |
CN1309785A (zh) | 2001-08-22 |
MY121446A (en) | 2006-01-28 |
US6585825B1 (en) | 2003-07-01 |
WO1999060448A8 (en) | 1999-12-29 |
KR20010034866A (ko) | 2001-04-25 |
CA2330747C (en) | 2010-07-27 |
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