DE69933670D1 - Temperaturfühler in Cmos-Technologie - Google Patents

Temperaturfühler in Cmos-Technologie

Info

Publication number
DE69933670D1
DE69933670D1 DE69933670T DE69933670T DE69933670D1 DE 69933670 D1 DE69933670 D1 DE 69933670D1 DE 69933670 T DE69933670 T DE 69933670T DE 69933670 T DE69933670 T DE 69933670T DE 69933670 D1 DE69933670 D1 DE 69933670D1
Authority
DE
Germany
Prior art keywords
temperature sensor
cmos technology
cmos
technology
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69933670T
Other languages
English (en)
Inventor
Giovanni Matranga
Coco Luca Lo
Giuseppe Compagno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69933670D1 publication Critical patent/DE69933670D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K3/00—Thermometers giving results other than momentary value of temperature
    • G01K3/005—Circuits arrangements for indicating a predetermined temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69933670T 1999-08-31 1999-08-31 Temperaturfühler in Cmos-Technologie Expired - Lifetime DE69933670D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99830540A EP1081477B1 (de) 1999-08-31 1999-08-31 Temperaturfühler in Cmos-Technologie

Publications (1)

Publication Number Publication Date
DE69933670D1 true DE69933670D1 (de) 2006-11-30

Family

ID=8243560

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69933670T Expired - Lifetime DE69933670D1 (de) 1999-08-31 1999-08-31 Temperaturfühler in Cmos-Technologie

Country Status (3)

Country Link
US (1) US6489831B1 (de)
EP (1) EP1081477B1 (de)
DE (1) DE69933670D1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108132106A (zh) * 2018-01-22 2018-06-08 江苏星宇芯联电子科技有限公司 一种cmos温度传感器及其传感方法

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3861613B2 (ja) * 2001-03-27 2006-12-20 日産自動車株式会社 オンチップ温度検出装置
FR2834343B1 (fr) * 2001-12-28 2004-04-09 St Microelectronics Sa Detecteur thermique
DE10204487B4 (de) * 2002-01-30 2004-03-04 Infineon Technologies Ag Temperatursensor
US6921199B2 (en) * 2002-03-22 2005-07-26 Ricoh Company, Ltd. Temperature sensor
KR100475736B1 (ko) 2002-08-09 2005-03-10 삼성전자주식회사 고속 테스트에 적합한 편이온도 검출회로를 갖는온도감지기 및 편이온도 검출방법
GB2393867B (en) * 2002-10-01 2006-09-20 Wolfson Ltd Temperature sensing apparatus and methods
FR2845767B1 (fr) * 2002-10-09 2005-12-09 St Microelectronics Sa Capteur numerique de temperature integre
FR2845781B1 (fr) 2002-10-09 2005-03-04 St Microelectronics Sa Generateur de tension de type a intervalle de bande
US6891358B2 (en) * 2002-12-27 2005-05-10 Analog Devices, Inc. Bandgap voltage reference circuit with high power supply rejection ratio (PSRR) and curvature correction
JP4363871B2 (ja) * 2003-03-19 2009-11-11 Ｏｋｉセミコンダクタ株式会社 半導体装置
US6946896B2 (en) * 2003-05-29 2005-09-20 Broadcom Corporation High temperature coefficient MOS bias generation circuit
KR100532445B1 (ko) * 2003-07-04 2005-11-30 삼성전자주식회사 온도 측정 회로 및 방법
FR2857456B1 (fr) 2003-07-07 2006-01-13 St Microelectronics Sa Cellule de detection de temperature et procede de determination du seuil de detection d'une telle cellule
US7027343B2 (en) * 2003-09-22 2006-04-11 Micron Technology Method and apparatus for controlling refresh operations in a dynamic memory device
US7180211B2 (en) * 2003-09-22 2007-02-20 Micro Technology, Inc. Temperature sensor
KR100541824B1 (ko) * 2003-10-06 2006-01-10 삼성전자주식회사 반도체 집적회로에 채용하기 적합한 온도감지 회로
JP4477429B2 (ja) * 2003-11-05 2010-06-09 富士通マイクロエレクトロニクス株式会社 半導体集積回路
US7255476B2 (en) * 2004-04-14 2007-08-14 International Business Machines Corporation On chip temperature measuring and monitoring circuit and method
US7038530B2 (en) * 2004-04-27 2006-05-02 Taiwan Semiconductor Manufacturing Company, Ltd. Reference voltage generator circuit having temperature and process variation compensation and method of manufacturing same
KR100699826B1 (ko) * 2004-06-14 2007-03-27 삼성전자주식회사 하나의 브랜치를 이용하여 다수개의 검출 온도 포인트를제공하는 온도 감지기 및 편이 온도 검출 방법
US8122187B2 (en) * 2004-07-02 2012-02-21 Qualcomm Incorporated Refreshing dynamic volatile memory
US20060028257A1 (en) * 2004-08-03 2006-02-09 Hong Huang System and method for over-temperature protection sensing employing MOSFET on-resistance Rds_on
US7427158B2 (en) * 2005-01-13 2008-09-23 Kabushiki Kaisha Toshiba Advanced thermal sensor
US7197420B2 (en) * 2005-02-04 2007-03-27 International Business Machines Corporation Method and apparatus for on-chip dynamic temperature tracking
US20060229839A1 (en) * 2005-03-29 2006-10-12 United Memories, Inc. Colorado Springs Temperature sensing and monitoring technique for integrated circuit devices
KR100674974B1 (ko) * 2005-05-25 2007-01-29 삼성전자주식회사 감지 온도를 조절할 수 있는 반도체 온도 센서
US7256643B2 (en) * 2005-08-04 2007-08-14 Micron Technology, Inc. Device and method for generating a low-voltage reference
US7362248B2 (en) 2005-11-22 2008-04-22 Stmicroelectronics, Inc. Temperature tamper detection circuit and method
US7978095B2 (en) 2005-11-22 2011-07-12 Stmicroelectronics, Inc. Test mode circuitry for a programmable tamper detection circuit
US7443176B2 (en) * 2005-11-22 2008-10-28 Stmicroelectronics, Inc. Test mode and test method for a temperature tamper detection circuit
US7405552B2 (en) 2006-01-04 2008-07-29 Micron Technology, Inc. Semiconductor temperature sensor with high sensitivity
US7331708B2 (en) * 2006-02-23 2008-02-19 National Semiconductor Corporation Frequency ratio digitizing temperature sensor with linearity correction
DE102006008937B4 (de) * 2006-02-27 2019-02-28 Infineon Technologies Ag Chipkartenmodul
US7495505B2 (en) * 2006-07-18 2009-02-24 Faraday Technology Corp. Low supply voltage band-gap reference circuit and negative temperature coefficient current generation unit thereof and method for supplying band-gap reference current
US7579898B2 (en) * 2006-07-31 2009-08-25 Freescale Semiconductor, Inc. Temperature sensor device and methods thereof
KR100816750B1 (ko) * 2006-08-11 2008-03-27 삼성전자주식회사 공유 블록 및 고유 블록을 갖는 스마트 카드, 검출기 및반도체 집적 회로
US9262326B2 (en) * 2006-08-14 2016-02-16 Qualcomm Incorporated Method and apparatus to enable the cooperative signaling of a shared bus interrupt in a multi-rank memory subsystem
TW200947861A (en) * 2008-05-09 2009-11-16 Tai 1 Microelectronics Corp Temperature sensing circuit operable under low voltage
US8931953B2 (en) 2010-05-27 2015-01-13 The Hong Kong University Of Science And Technology Low voltage low power CMOS temperature sensor circuit
IT1404585B1 (it) * 2010-11-11 2013-11-22 St Microelectronics Srl Trasduttore temperatura-corrente
EP2505978B1 (de) 2011-03-28 2017-05-10 Nxp B.V. Temperatursensor, elektronische Vorrichtung und Temperaturmessverfahren
JP5635935B2 (ja) * 2011-03-31 2014-12-03 ルネサスエレクトロニクス株式会社 定電流生成回路、これを含むマイクロプロセッサ及び半導体装置
CN102981550A (zh) * 2012-11-27 2013-03-20 中国科学院微电子研究所 一种低压低功耗cmos电压源
US9780652B1 (en) * 2013-01-25 2017-10-03 Ali Tasdighi Far Ultra-low power and ultra-low voltage bandgap voltage regulator device and method thereof
US9559162B2 (en) 2013-06-19 2017-01-31 Globalfoundries Inc. Thermoresistance sensor structure for integrated circuits and method of making
US9519304B1 (en) 2014-07-10 2016-12-13 Ali Tasdighi Far Ultra-low power bias current generation and utilization in current and voltage source and regulator devices
US9841325B2 (en) 2014-08-29 2017-12-12 Oracle International Corporation High accuracy, compact on-chip temperature sensor
US10018515B2 (en) 2015-09-16 2018-07-10 Qualcomm Incorporated Transistor temperature sensing
US10177713B1 (en) 2016-03-07 2019-01-08 Ali Tasdighi Far Ultra low power high-performance amplifier
US11374502B2 (en) 2017-03-31 2022-06-28 Case Western Reserve University Power management for wireless nodes
RU180943U1 (ru) * 2017-09-13 2018-07-02 Акционерное общество "Протон" (АО "Протон") Интегральный датчик перегрева ключа
TWI636269B (zh) * 2017-12-08 2018-09-21 朋程科技股份有限公司 過溫度偵測電路及其測試方法
CN109932630B (zh) * 2017-12-15 2021-08-03 朋程科技股份有限公司 过温度检测电路及其测试方法
CN111583987B (zh) * 2019-02-19 2022-06-03 华邦电子股份有限公司 温度感测器的评估方法
CZ2019228A3 (cs) 2019-04-11 2020-06-17 Xglu S.R.O. Zařízení pro namátkové měření glykemie a způsob jeho použití

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2598154B2 (ja) * 1990-05-24 1997-04-09 株式会社東芝 温度検出回路
CA2150502A1 (en) * 1994-08-05 1996-02-06 Michael F. Mattes Method and apparatus for measuring temperature
JPH08294229A (ja) * 1995-04-20 1996-11-05 Nec Corp 半導体集積回路装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108132106A (zh) * 2018-01-22 2018-06-08 江苏星宇芯联电子科技有限公司 一种cmos温度传感器及其传感方法

Also Published As

Publication number Publication date
EP1081477A1 (de) 2001-03-07
US6489831B1 (en) 2002-12-03
EP1081477B1 (de) 2006-10-18

Similar Documents

Publication Publication Date Title
DE69933670D1 (de) Temperaturfühler in Cmos-Technologie
DE60039981D1 (de) Bildsensor
DE60031590D1 (de) Bildsensor
IT1317648B1 (it) Termometro ad infrarossi perfezionato
DE50014319D1 (de) Positionssensor
DE60133262D1 (de) Sensorzelle
IT1298515B1 (it) Termometro ad infrarossi
DE60032747D1 (de) Annäherungssensor
DE60031028D1 (de) Selbsteinstellender Temperatursensor
DE60026031D1 (de) Insassensensor
DE69912887D1 (de) Sensor
DE59811545D1 (de) Messaufnehmer
DE50015008D1 (de) Drehmomentsensor
DE60029530D1 (de) Transporttemperatureinheit
DE60026616D1 (de) Aussenluft-temperaturfühler
DE50106783D1 (de) Sensoranordnung
DE50015835D1 (de) Sensor
DE60112497D1 (de) Keramischer Infrarotsensor
DE50009018D1 (de) Positionssensor
DE60143337D1 (de) Rotationssensor
DE29905700U1 (de) Sensoranordnung
DE50002620D1 (de) Aktorintegrierter kraftsensor
DE60045592D1 (de) Benachbart montierbare Sensoreinheit
DE50109108D1 (de) Leistungssensor
DE50113270D1 (de) Integrierte schaltung mit temperatursensor

Legal Events

Date Code Title Description
8332 No legal effect for de