DE69712541D1 - Halbleiterlaser und Herstellungsverfahren - Google Patents
Halbleiterlaser und HerstellungsverfahrenInfo
- Publication number
- DE69712541D1 DE69712541D1 DE69712541T DE69712541T DE69712541D1 DE 69712541 D1 DE69712541 D1 DE 69712541D1 DE 69712541 T DE69712541 T DE 69712541T DE 69712541 T DE69712541 T DE 69712541T DE 69712541 D1 DE69712541 D1 DE 69712541D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- semiconductor laser
- laser
- semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/204—Strongly index guided structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
- H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
- H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2227—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32316—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm comprising only (Al)GaAs
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP00738296A JP3429407B2 (ja) | 1996-01-19 | 1996-01-19 | 半導体レーザ装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69712541D1 true DE69712541D1 (de) | 2002-06-20 |
DE69712541T2 DE69712541T2 (de) | 2002-12-19 |
Family
ID=11664396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69712541T Expired - Lifetime DE69712541T2 (de) | 1996-01-19 | 1997-01-17 | Halbleiterlaser und Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (2) | US5956361A (de) |
EP (1) | EP0785602B1 (de) |
JP (1) | JP3429407B2 (de) |
DE (1) | DE69712541T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0870352A1 (de) * | 1996-09-26 | 1998-10-14 | Uniphase Opto Holdings, Inc. | Verfahren zur herstellung einer optoelektronischen halbleitervorrichtung mit mesa |
US6160830A (en) | 1998-03-04 | 2000-12-12 | Motorola, Inc. | Semiconductor laser device and method of manufacture |
WO2000021169A1 (fr) * | 1998-10-07 | 2000-04-13 | Sharp Kabushiki Kaisha | Laser a semiconducteurs |
DE60027949T2 (de) * | 1999-02-23 | 2007-01-04 | Mitsubishi Chemical Corp. | Optische Halbleitervorrichtung |
JP3459607B2 (ja) * | 1999-03-24 | 2003-10-20 | 三洋電機株式会社 | 半導体レーザ素子およびその製造方法 |
JP3575373B2 (ja) * | 1999-04-19 | 2004-10-13 | 株式会社村田製作所 | 外力検知センサの製造方法 |
DE60031819T2 (de) * | 1999-09-27 | 2007-09-13 | Sanyo Electric Co., Ltd., Moriguchi | Halbleiterlaservorrichtung und Herstellungsverfahren |
DE60033369T2 (de) * | 1999-12-28 | 2007-11-29 | Sanyo Electric Co., Ltd., Moriguchi | Halbleiterlaservorrichtung |
KR100396742B1 (ko) * | 2000-11-23 | 2003-09-02 | 주식회사일진 | 광학집적회로 소자 및 그 제조방법, 그리고 그 광학집적회로 소자를 이용하여 제조한 광통신용 송수신 장치의 모듈 |
JP3762640B2 (ja) | 2000-12-25 | 2006-04-05 | ユーディナデバイス株式会社 | 半導体装置の製造方法および光導波路の製造方法、多層光導波路の製造方法 |
JP2002217105A (ja) * | 2001-01-17 | 2002-08-02 | Sumitomo Chem Co Ltd | 3−5族化合物半導体の製造方法 |
JP2002374040A (ja) | 2001-06-15 | 2002-12-26 | Sharp Corp | 半導体レーザ素子およびその製造方法 |
US6839369B2 (en) * | 2001-06-26 | 2005-01-04 | The Furukawa Electric Co., Ltd. | Surface emitting semiconductor laser device |
US6977953B2 (en) * | 2001-07-27 | 2005-12-20 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device and method of fabricating the same |
JP2004055587A (ja) * | 2002-07-16 | 2004-02-19 | Sharp Corp | 半導体レーザ素子および半導体レーザ素子の製造方法 |
JP2005085977A (ja) * | 2003-09-09 | 2005-03-31 | Sharp Corp | 半導体レーザ素子および半導体レーザ素子の製造方法 |
US8373152B2 (en) * | 2008-03-27 | 2013-02-12 | Lg Innotek Co., Ltd. | Light-emitting element and a production method therefor |
JP2009289899A (ja) * | 2008-05-28 | 2009-12-10 | Kyocera Corp | 半導体発光素子、これを備えたledアレイチップ、及び半導体発光素子の製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5029175A (en) * | 1988-12-08 | 1991-07-02 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser |
JPH02228089A (ja) * | 1989-02-28 | 1990-09-11 | Omron Tateisi Electron Co | リッジ導波路型半導体レーザ |
JP2555197B2 (ja) * | 1989-09-09 | 1996-11-20 | 三菱電機株式会社 | 半導体レーザ装置 |
JP3098827B2 (ja) | 1991-12-05 | 2000-10-16 | 松下電子工業株式会社 | 半導体レーザ装置 |
US5297158A (en) * | 1991-04-22 | 1994-03-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device including a gallium-aluminum arsenic compound |
US5316967A (en) * | 1992-01-21 | 1994-05-31 | Mitsubishi Denki Kabushiki Kaisha | Method for producing semiconductor device |
DE4240539C2 (de) * | 1992-01-21 | 1997-07-03 | Mitsubishi Electric Corp | Verfahren zur Herstellung eines Halbleiterlasers |
JPH06268334A (ja) * | 1993-03-16 | 1994-09-22 | Mitsubishi Kasei Corp | レーザーダイオード及びその製造方法 |
JPH07235732A (ja) * | 1993-12-28 | 1995-09-05 | Nec Corp | 半導体レーザ |
US5400354A (en) * | 1994-02-08 | 1995-03-21 | Ludowise; Michael | Laminated upper cladding structure for a light-emitting device |
JPH08264898A (ja) * | 1995-03-23 | 1996-10-11 | Mitsubishi Electric Corp | 半導体レーザ装置 |
-
1996
- 1996-01-19 JP JP00738296A patent/JP3429407B2/ja not_active Expired - Fee Related
-
1997
- 1997-01-17 EP EP97100683A patent/EP0785602B1/de not_active Expired - Lifetime
- 1997-01-17 DE DE69712541T patent/DE69712541T2/de not_active Expired - Lifetime
- 1997-01-17 US US08/785,242 patent/US5956361A/en not_active Expired - Fee Related
-
1999
- 1999-07-09 US US09/350,795 patent/US6140142A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69712541T2 (de) | 2002-12-19 |
JPH09199790A (ja) | 1997-07-31 |
US6140142A (en) | 2000-10-31 |
EP0785602B1 (de) | 2002-05-15 |
EP0785602A1 (de) | 1997-07-23 |
JP3429407B2 (ja) | 2003-07-22 |
US5956361A (en) | 1999-09-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |