DE69927548D1 - Vorrichtung zur Herstellung von Dünnfilmen - Google Patents
Vorrichtung zur Herstellung von DünnfilmenInfo
- Publication number
- DE69927548D1 DE69927548D1 DE69927548T DE69927548T DE69927548D1 DE 69927548 D1 DE69927548 D1 DE 69927548D1 DE 69927548 T DE69927548 T DE 69927548T DE 69927548 T DE69927548 T DE 69927548T DE 69927548 D1 DE69927548 D1 DE 69927548D1
- Authority
- DE
- Germany
- Prior art keywords
- thin films
- producing thin
- producing
- films
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Fluid Mechanics (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019980017858A KR100267885B1 (ko) | 1998-05-18 | 1998-05-18 | 반도체 박막증착장치 |
KR9817858 | 1998-05-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69927548D1 true DE69927548D1 (de) | 2006-02-16 |
DE69927548T2 DE69927548T2 (de) | 2006-06-29 |
Family
ID=36580479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69927548T Expired - Fee Related DE69927548T2 (de) | 1998-05-18 | 1999-05-18 | Vorrichtung zur Herstellung von Dünnfilmen |
Country Status (6)
Country | Link |
---|---|
US (1) | US6183563B1 (de) |
EP (1) | EP0959150B8 (de) |
JP (1) | JP3073489B2 (de) |
KR (1) | KR100267885B1 (de) |
DE (1) | DE69927548T2 (de) |
TW (1) | TW483051B (de) |
Families Citing this family (112)
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US6671223B2 (en) * | 1996-12-20 | 2003-12-30 | Westerngeco, L.L.C. | Control devices for controlling the position of a marine seismic streamer |
DE19959603A1 (de) * | 1999-12-10 | 2001-06-13 | Volkswagen Ag | Verfahren zum Beschichten der inneren Oberfläche eines Reaktorgefäßes eines Reaktors |
DE19959604A1 (de) * | 1999-12-10 | 2001-06-13 | Volkswagen Ag | Reaktor für Plasmabeschichtungen und Plasmadiffusionsbehandlungen |
KR100332314B1 (ko) * | 2000-06-24 | 2002-04-12 | 서성기 | 박막증착용 반응용기 |
KR100444149B1 (ko) * | 2000-07-22 | 2004-08-09 | 주식회사 아이피에스 | Ald 박막증착설비용 클리닝방법 |
US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
EP1371751B1 (de) * | 2001-02-09 | 2011-08-17 | Tokyo Electron Limited | Vorrichtung zur herstellung von filmen |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6660126B2 (en) * | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
KR100423953B1 (ko) * | 2001-03-19 | 2004-03-24 | 디지웨이브 테크놀러지스 주식회사 | 화학기상증착장치 |
US6849545B2 (en) | 2001-06-20 | 2005-02-01 | Applied Materials, Inc. | System and method to form a composite film stack utilizing sequential deposition techniques |
US20030198754A1 (en) * | 2001-07-16 | 2003-10-23 | Ming Xi | Aluminum oxide chamber and process |
US20090004850A1 (en) * | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
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US20080268635A1 (en) * | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
WO2003030224A2 (en) | 2001-07-25 | 2003-04-10 | Applied Materials, Inc. | Barrier formation using novel sputter-deposition method |
US8110489B2 (en) * | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
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US7049226B2 (en) * | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
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US6916398B2 (en) * | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
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US6986814B2 (en) * | 2001-12-20 | 2006-01-17 | General Electric Company | Gas distributor for vapor coating method and container |
JP2003197532A (ja) * | 2001-12-21 | 2003-07-11 | Sumitomo Mitsubishi Silicon Corp | エピタキシャル成長方法及びエピタキシャル成長用サセプター |
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US5000113A (en) * | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
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US5522932A (en) * | 1993-05-14 | 1996-06-04 | Applied Materials, Inc. | Corrosion-resistant apparatus |
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JPH09202973A (ja) * | 1996-01-24 | 1997-08-05 | Tokyo Electron Ltd | 成膜処理装置の排気システム構造 |
US5906683A (en) * | 1996-04-16 | 1999-05-25 | Applied Materials, Inc. | Lid assembly for semiconductor processing chamber |
EP0854210B1 (de) * | 1996-12-19 | 2002-03-27 | Toshiba Ceramics Co., Ltd. | Aufdampfungsvorrichtung zur Herstellung von Dünnfilmen |
US5968276A (en) * | 1997-07-11 | 1999-10-19 | Applied Materials, Inc. | Heat exchange passage connection |
-
1998
- 1998-05-18 KR KR1019980017858A patent/KR100267885B1/ko not_active IP Right Cessation
-
1999
- 1999-05-17 TW TW088107958A patent/TW483051B/zh not_active IP Right Cessation
- 1999-05-18 JP JP11136866A patent/JP3073489B2/ja not_active Expired - Lifetime
- 1999-05-18 EP EP99303880A patent/EP0959150B8/de not_active Expired - Lifetime
- 1999-05-18 DE DE69927548T patent/DE69927548T2/de not_active Expired - Fee Related
- 1999-05-18 US US09/313,765 patent/US6183563B1/en not_active Expired - Lifetime
Also Published As
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TW483051B (en) | 2002-04-11 |
EP0959150B8 (de) | 2006-01-18 |
KR100267885B1 (ko) | 2000-11-01 |
JP3073489B2 (ja) | 2000-08-07 |
EP0959150B1 (de) | 2005-10-05 |
DE69927548T2 (de) | 2006-06-29 |
US6183563B1 (en) | 2001-02-06 |
KR19990085443A (ko) | 1999-12-06 |
EP0959150A2 (de) | 1999-11-24 |
EP0959150A3 (de) | 2002-07-24 |
JP2000031061A (ja) | 2000-01-28 |
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