DE69839988D1 - Vorrichtung zur Herstellung von dünnen Schichten - Google Patents

Vorrichtung zur Herstellung von dünnen Schichten

Info

Publication number
DE69839988D1
DE69839988D1 DE69839988T DE69839988T DE69839988D1 DE 69839988 D1 DE69839988 D1 DE 69839988D1 DE 69839988 T DE69839988 T DE 69839988T DE 69839988 T DE69839988 T DE 69839988T DE 69839988 D1 DE69839988 D1 DE 69839988D1
Authority
DE
Germany
Prior art keywords
thin layers
producing thin
producing
layers
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69839988T
Other languages
English (en)
Inventor
Shigeaki Kishida
Takashi Mikami
Hiroya Kirimura
Kyoshi Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Electric Co Ltd
Original Assignee
Nissin Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Electric Co Ltd filed Critical Nissin Electric Co Ltd
Application granted granted Critical
Publication of DE69839988D1 publication Critical patent/DE69839988D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321Discharge generated by other radiation
    • H01J37/3233Discharge generated by other radiation using charged particles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
DE69839988T 1997-11-28 1998-11-24 Vorrichtung zur Herstellung von dünnen Schichten Expired - Lifetime DE69839988D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09344008A JP3129265B2 (ja) 1997-11-28 1997-11-28 薄膜形成装置

Publications (1)

Publication Number Publication Date
DE69839988D1 true DE69839988D1 (de) 2008-10-23

Family

ID=18365953

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69839988T Expired - Lifetime DE69839988D1 (de) 1997-11-28 1998-11-24 Vorrichtung zur Herstellung von dünnen Schichten

Country Status (6)

Country Link
US (1) US6051120A (de)
EP (1) EP0921556B1 (de)
JP (1) JP3129265B2 (de)
KR (1) KR100552524B1 (de)
DE (1) DE69839988D1 (de)
TW (1) TW398007B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3599564B2 (ja) * 1998-06-25 2004-12-08 東京エレクトロン株式会社 イオン流形成方法及び装置
JP2976965B2 (ja) * 1998-04-02 1999-11-10 日新電機株式会社 成膜方法及び成膜装置
JP3709552B2 (ja) * 1999-09-03 2005-10-26 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP3514186B2 (ja) * 1999-09-16 2004-03-31 日新電機株式会社 薄膜形成方法及び装置
DE10060002B4 (de) * 1999-12-07 2016-01-28 Komatsu Ltd. Vorrichtung zur Oberflächenbehandlung
JP3671966B2 (ja) * 2002-09-20 2005-07-13 日新電機株式会社 薄膜形成装置及び方法
KR100635852B1 (ko) 2005-01-06 2006-10-19 삼성전자주식회사 반도체 제조장치
JP5781833B2 (ja) * 2011-05-27 2015-09-24 日本電信電話株式会社 薄膜形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3606959A1 (de) * 1986-03-04 1987-09-10 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung
JPS6393881A (ja) * 1986-10-08 1988-04-25 Anelva Corp プラズマ処理装置
US4885070A (en) * 1988-02-12 1989-12-05 Leybold Aktiengesellschaft Method and apparatus for the application of materials
JPH01205519A (ja) * 1988-02-12 1989-08-17 Shimadzu Corp プラズマ処理装置
JP2626339B2 (ja) * 1991-08-26 1997-07-02 日新電機株式会社 薄膜形成装置
US5435900A (en) * 1992-11-04 1995-07-25 Gorokhovsky; Vladimir I. Apparatus for application of coatings in vacuum
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5556474A (en) * 1993-12-14 1996-09-17 Nissin Electric Co., Ltd. Plasma processing apparatus
US5589737A (en) * 1994-12-06 1996-12-31 Lam Research Corporation Plasma processor for large workpieces
JPH08287863A (ja) * 1995-04-07 1996-11-01 Nissin Electric Co Ltd イオン注入装置
DE19700856C2 (de) * 1996-01-23 1999-08-26 Fraunhofer Ges Forschung Ionenquelle für eine Ionenstrahlanlage

Also Published As

Publication number Publication date
EP0921556A3 (de) 2002-02-27
US6051120A (en) 2000-04-18
EP0921556B1 (de) 2008-09-10
KR100552524B1 (ko) 2006-06-13
JPH11158639A (ja) 1999-06-15
JP3129265B2 (ja) 2001-01-29
KR19990045633A (ko) 1999-06-25
EP0921556A2 (de) 1999-06-09
TW398007B (en) 2000-07-11

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Legal Events

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8364 No opposition during term of opposition