DE69921423D1 - Herstellung von feldeffekt-halbleiteranordnungen - Google Patents

Herstellung von feldeffekt-halbleiteranordnungen

Info

Publication number
DE69921423D1
DE69921423D1 DE69921423T DE69921423T DE69921423D1 DE 69921423 D1 DE69921423 D1 DE 69921423D1 DE 69921423 T DE69921423 T DE 69921423T DE 69921423 T DE69921423 T DE 69921423T DE 69921423 D1 DE69921423 D1 DE 69921423D1
Authority
DE
Germany
Prior art keywords
production
field effect
effect semiconductor
semiconductor arrangements
arrangements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69921423T
Other languages
English (en)
Other versions
DE69921423T2 (de
Inventor
Jikui Luo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69921423D1 publication Critical patent/DE69921423D1/de
Application granted granted Critical
Publication of DE69921423T2 publication Critical patent/DE69921423T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69921423T 1998-04-17 1999-03-29 Herstellung von feldeffekt-halbleiteranordnungen Expired - Fee Related DE69921423T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9808237 1998-04-17
GBGB9808237.3A GB9808237D0 (en) 1998-04-17 1998-04-17 Mnufacture of field-effect semiconductor devices
PCT/IB1999/000538 WO1999054919A2 (en) 1998-04-17 1999-03-29 Manufacture of field-effect semiconductor devices

Publications (2)

Publication Number Publication Date
DE69921423D1 true DE69921423D1 (de) 2004-12-02
DE69921423T2 DE69921423T2 (de) 2005-11-10

Family

ID=10830541

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69921423T Expired - Fee Related DE69921423T2 (de) 1998-04-17 1999-03-29 Herstellung von feldeffekt-halbleiteranordnungen

Country Status (7)

Country Link
US (1) US6228698B1 (de)
EP (1) EP0996970B1 (de)
JP (1) JP2002505811A (de)
KR (1) KR100538602B1 (de)
DE (1) DE69921423T2 (de)
GB (1) GB9808237D0 (de)
WO (1) WO1999054919A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9922764D0 (en) * 1999-09-28 1999-11-24 Koninkl Philips Electronics Nv Manufacture of trench-gate semiconductor devices
US6884093B2 (en) 2000-10-03 2005-04-26 The Trustees Of Princeton University Organic triodes with novel grid structures and method of production
DE60219300T2 (de) * 2001-04-28 2008-01-03 Koninklijke Philips Electronics N.V. Halbleiteranordnungen mit graben-gateelektrode und verfahren zu deren herstellung
WO2002089195A2 (en) * 2001-04-28 2002-11-07 Koninklijke Philips Electronics N.V. Method of manufacturing a trench-gate semiconductor device
US8129778B2 (en) * 2009-12-02 2012-03-06 Fairchild Semiconductor Corporation Semiconductor devices and methods for making the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5158903A (en) * 1989-11-01 1992-10-27 Matsushita Electric Industrial Co., Ltd. Method for producing a field-effect type semiconductor device
US5132238A (en) * 1989-12-28 1992-07-21 Nissan Motor Co., Ltd. Method of manufacturing semiconductor device utilizing an accumulation layer
JP2606404B2 (ja) * 1990-04-06 1997-05-07 日産自動車株式会社 半導体装置
KR940002400B1 (ko) * 1991-05-15 1994-03-24 금성일렉트론 주식회사 리세스 게이트를 갖는 반도체장치의 제조방법
GB9207860D0 (en) 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor component
US5322802A (en) * 1993-01-25 1994-06-21 North Carolina State University At Raleigh Method of fabricating silicon carbide field effect transistor
GB9306895D0 (en) * 1993-04-01 1993-05-26 Philips Electronics Uk Ltd A method of manufacturing a semiconductor device comprising an insulated gate field effect device
GB9313843D0 (en) * 1993-07-05 1993-08-18 Philips Electronics Uk Ltd A semiconductor device comprising an insulated gate field effect transistor
JP2616569B2 (ja) * 1994-09-29 1997-06-04 日本電気株式会社 半導体集積回路装置の製造方法
US5567634A (en) * 1995-05-01 1996-10-22 National Semiconductor Corporation Method of fabricating self-aligned contact trench DMOS transistors
GB9700923D0 (en) 1997-01-17 1997-03-05 Philips Electronics Nv Semiconductor devices

Also Published As

Publication number Publication date
WO1999054919A2 (en) 1999-10-28
JP2002505811A (ja) 2002-02-19
EP0996970A2 (de) 2000-05-03
GB9808237D0 (en) 1998-06-17
KR20010013918A (ko) 2001-02-26
KR100538602B1 (ko) 2005-12-22
US6228698B1 (en) 2001-05-08
DE69921423T2 (de) 2005-11-10
WO1999054919A3 (en) 2000-03-02
EP0996970B1 (de) 2004-10-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee