DE69920653D1 - Halbleiterlaservorrichtung - Google Patents
HalbleiterlaservorrichtungInfo
- Publication number
- DE69920653D1 DE69920653D1 DE69920653T DE69920653T DE69920653D1 DE 69920653 D1 DE69920653 D1 DE 69920653D1 DE 69920653 T DE69920653 T DE 69920653T DE 69920653 T DE69920653 T DE 69920653T DE 69920653 D1 DE69920653 D1 DE 69920653D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser device
- semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/14—Beam splitting or combining systems operating by reflection only
- G02B27/141—Beam splitting or combining systems operating by reflection only using dichroic mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B2007/0003—Recording, reproducing or erasing systems characterised by the structure or type of the carrier
- G11B2007/0006—Recording, reproducing or erasing systems characterised by the structure or type of the carrier adapted for scanning different types of carrier, e.g. CD & DVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Optical Head (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19845798 | 1998-07-14 | ||
JP19845798 | 1998-07-14 | ||
PCT/JP1999/003765 WO2000004614A1 (fr) | 1998-07-14 | 1999-07-13 | Dispositif laser a semi-conducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69920653D1 true DE69920653D1 (de) | 2004-11-04 |
DE69920653T2 DE69920653T2 (de) | 2005-10-13 |
Family
ID=16391432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69920653T Expired - Fee Related DE69920653T2 (de) | 1998-07-14 | 1999-07-13 | Halbleiterlaservorrichtung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6456635B1 (de) |
EP (1) | EP1033793B1 (de) |
KR (1) | KR100333027B1 (de) |
CN (1) | CN1118911C (de) |
DE (1) | DE69920653T2 (de) |
WO (1) | WO2000004614A1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000223791A (ja) | 1999-02-04 | 2000-08-11 | Sharp Corp | 半導体レーザ装置およびその製造方法 |
EP1047051A3 (de) | 1999-04-19 | 2001-01-24 | Samsung Electronics Co., Ltd. | Lichtemittierendes Modul und kompatibles optisches Abtastgerät dafür |
JP3849967B2 (ja) * | 2000-05-19 | 2006-11-22 | シャープ株式会社 | 光ピックアップ |
JP3844290B2 (ja) * | 2001-01-24 | 2006-11-08 | シャープ株式会社 | ホログラムレーザおよび光ピックアップ |
JP2003324238A (ja) * | 2002-05-02 | 2003-11-14 | Sumitomo Electric Ind Ltd | レーザモジュールおよび光ネットワーク |
CN1324585C (zh) * | 2002-06-03 | 2007-07-04 | 索尼株式会社 | 双波长光学元件 |
JP3759081B2 (ja) | 2002-07-18 | 2006-03-22 | Nec化合物デバイス株式会社 | 半導体レーザ装置 |
JP2004152845A (ja) * | 2002-10-29 | 2004-05-27 | Sharp Corp | 半導体レーザ装置 |
KR20040076650A (ko) * | 2003-02-26 | 2004-09-03 | 삼성전자주식회사 | 광픽업 장치 |
JP4639578B2 (ja) * | 2003-06-27 | 2011-02-23 | 日本電気株式会社 | 半導体レーザモジュール及びその製造方法 |
US7086390B2 (en) * | 2004-11-05 | 2006-08-08 | Briggs & Stratton Corporation | Integrated fuel tank and vapor containment system |
KR100576881B1 (ko) * | 2005-01-03 | 2006-05-10 | 삼성전기주식회사 | 반도체 레이저 다이오드장치 및 그 제조방법 |
GB2432785B (en) * | 2005-12-05 | 2011-08-10 | Gerald Hipperson | A lotion application compartment |
JP4711838B2 (ja) * | 2006-01-27 | 2011-06-29 | 株式会社東芝 | 多波長半導体レーザ装置 |
JP4283837B2 (ja) * | 2006-09-26 | 2009-06-24 | シャープ株式会社 | 半導体レーザ装置およびそれを用いた光ピックアップ装置 |
TW200947893A (en) * | 2008-05-08 | 2009-11-16 | Truelight Corp | Dual-wavelength laser element for fiber communication |
TW200947895A (en) * | 2008-05-08 | 2009-11-16 | Truelight Corp | Tri-wavelength bi-directional fiber communication system |
CN101587216B (zh) * | 2008-05-20 | 2013-03-20 | 光环科技股份有限公司 | 用于光纤通信的双波长激光组件 |
CN108258577B (zh) * | 2018-03-20 | 2019-08-23 | 福建中科光芯光电科技有限公司 | 一种用于提升激光器芯片可靠性及耦合效率的倒装封装 |
US11824323B1 (en) * | 2018-12-06 | 2023-11-21 | Nlight, Inc. | Diode laser package for bidirectionally emitting semiconductor laser devices |
CN112582874B (zh) * | 2019-09-29 | 2021-10-01 | 山东华光光电子股份有限公司 | 一种激光光灸用复合激光器及封装方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4517667A (en) * | 1982-06-10 | 1985-05-14 | Xerox Corporation | Direct read after write optical disk system |
JPS62152474A (ja) | 1985-12-26 | 1987-07-07 | アロカ株式会社 | マグネテイツクインプラント加温装置 |
JPH054288Y2 (de) * | 1986-03-19 | 1993-02-02 | ||
US4860276A (en) | 1986-09-18 | 1989-08-22 | Nippon Telegraph And Telephone Corporation | Micro optical head with an optically switched laser diode |
JPH0664755B2 (ja) * | 1987-03-16 | 1994-08-22 | 日本電信電話株式会社 | 相変態形書き替え可能光記録媒体光ヘツド用半導体アレイレ−ザ |
JPH0652582B2 (ja) * | 1987-09-01 | 1994-07-06 | 株式会社日立製作所 | 光ヘッド |
JPH02159083A (ja) * | 1988-12-12 | 1990-06-19 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JP2758253B2 (ja) * | 1990-05-29 | 1998-05-28 | 株式会社東芝 | 集積型半導体レーザ装置 |
JPH04154182A (ja) * | 1990-10-18 | 1992-05-27 | Nec Corp | 半導体レーザ装置 |
US5619488A (en) * | 1991-09-07 | 1997-04-08 | Fuji Xerox Co., Ltd. | Information recording device |
JP2869279B2 (ja) * | 1992-09-16 | 1999-03-10 | 三菱電機株式会社 | 半導体レーザダイオード及びその製造方法並びに半導体レーザダイオードアレイ |
JP3048902B2 (ja) * | 1995-11-02 | 2000-06-05 | 三洋電機株式会社 | 光学式記録媒体の再生装置 |
KR100189910B1 (ko) * | 1996-05-15 | 1999-06-01 | 윤종용 | 광픽업장치 |
JPH09320098A (ja) | 1996-05-27 | 1997-12-12 | Sony Corp | 光ピックアップ装置および複合光学装置 |
JP3597311B2 (ja) * | 1996-07-18 | 2004-12-08 | オリンパス株式会社 | 光ピックアップ |
KR100195137B1 (ko) * | 1996-10-24 | 1999-06-15 | 윤종용 | 호환형 광픽업장치 |
KR20000015991A (ko) | 1996-10-31 | 2000-03-25 | 다카노 야스아키 | 광 픽업 장치 |
US5936929A (en) * | 1997-05-02 | 1999-08-10 | Motorola, Inc. | Optical submodule and method for making |
JP3375850B2 (ja) | 1997-05-28 | 2003-02-10 | シャープ株式会社 | 半導体レーザ装置及びその製造方法 |
JP3304825B2 (ja) | 1997-06-13 | 2002-07-22 | シャープ株式会社 | 半導体レーザ装置およびその製造方法 |
JPH11112108A (ja) * | 1997-09-30 | 1999-04-23 | Victor Co Of Japan Ltd | 半導体レーザ素子 |
-
1999
- 1999-07-13 EP EP99929803A patent/EP1033793B1/de not_active Expired - Lifetime
- 1999-07-13 DE DE69920653T patent/DE69920653T2/de not_active Expired - Fee Related
- 1999-07-13 WO PCT/JP1999/003765 patent/WO2000004614A1/ja active IP Right Grant
- 1999-07-13 CN CN99801112A patent/CN1118911C/zh not_active Expired - Fee Related
- 1999-07-13 KR KR1020007002638A patent/KR100333027B1/ko not_active IP Right Cessation
- 1999-07-13 US US09/508,630 patent/US6456635B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1033793B1 (de) | 2004-09-29 |
EP1033793A4 (de) | 2001-04-18 |
CN1118911C (zh) | 2003-08-20 |
DE69920653T2 (de) | 2005-10-13 |
US6456635B1 (en) | 2002-09-24 |
KR20010023938A (ko) | 2001-03-26 |
EP1033793A1 (de) | 2000-09-06 |
WO2000004614A1 (fr) | 2000-01-27 |
KR100333027B1 (ko) | 2002-04-15 |
CN1273703A (zh) | 2000-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |