DE69913906D1 - Lichtundurchlässiger Siliziumkarbidwerkstoff hoher Reinheit, ein lichtundurchlässiges Bauteil für eine Halbleiterbehandlungsapparatur, und eine Halbleiterbehandlungsapparatur - Google Patents

Lichtundurchlässiger Siliziumkarbidwerkstoff hoher Reinheit, ein lichtundurchlässiges Bauteil für eine Halbleiterbehandlungsapparatur, und eine Halbleiterbehandlungsapparatur

Info

Publication number
DE69913906D1
DE69913906D1 DE69913906T DE69913906T DE69913906D1 DE 69913906 D1 DE69913906 D1 DE 69913906D1 DE 69913906 T DE69913906 T DE 69913906T DE 69913906 T DE69913906 T DE 69913906T DE 69913906 D1 DE69913906 D1 DE 69913906D1
Authority
DE
Germany
Prior art keywords
treatment apparatus
semiconductor treatment
opaque
silicon carbide
high purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69913906T
Other languages
English (en)
Other versions
DE69913906T2 (de
Inventor
Masao Nishioka
Naotaka Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Application granted granted Critical
Publication of DE69913906D1 publication Critical patent/DE69913906D1/de
Publication of DE69913906T2 publication Critical patent/DE69913906T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE1999613906 1998-10-07 1999-10-06 Lichtundurchlässiger Siliziumkarbidwerkstoff hoher Reinheit, ein lichtundurchlässiger Bauteil für eine Halbleiterbehandlungsapparatur, und eine Halbleiterbehandlungsapparatur Expired - Fee Related DE69913906T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10285291A JP2000109366A (ja) 1998-10-07 1998-10-07 光不透過性の高純度炭化珪素材、半導体処理装置用遮光材および半導体処理装置
JP28529198 1998-10-07

Publications (2)

Publication Number Publication Date
DE69913906D1 true DE69913906D1 (de) 2004-02-05
DE69913906T2 DE69913906T2 (de) 2004-11-18

Family

ID=17689630

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1999613906 Expired - Fee Related DE69913906T2 (de) 1998-10-07 1999-10-06 Lichtundurchlässiger Siliziumkarbidwerkstoff hoher Reinheit, ein lichtundurchlässiger Bauteil für eine Halbleiterbehandlungsapparatur, und eine Halbleiterbehandlungsapparatur

Country Status (6)

Country Link
US (1) US6147020A (de)
EP (1) EP0992608B1 (de)
JP (1) JP2000109366A (de)
KR (1) KR100315533B1 (de)
DE (1) DE69913906T2 (de)
TW (1) TW428056B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3932154B2 (ja) * 1998-10-16 2007-06-20 東海カーボン株式会社 ＳｉＣ成形体及びその製造方法
EP1043420A1 (de) * 1999-04-07 2000-10-11 Ngk Insulators, Ltd. Siliziumkarbid-Formkörper
JP3648112B2 (ja) * 1999-11-26 2005-05-18 東芝セラミックス株式会社 ＣＶＤ−ＳｉＣ自立膜構造体、及びその製造方法
JP2002313888A (ja) * 2001-04-09 2002-10-25 Ibiden Co Ltd 半導体用治具
DE10328842B4 (de) 2003-06-26 2007-03-01 Siltronic Ag Suszeptor für eine chemische Gasphasenabscheidung, Verfahren zur Bearbeitung einer Halbleiterscheibe durch chemische Gasphasenabscheidung und nach dem Verfahren bearbeitete Halbleiterscheibe
DE102008002164A1 (de) 2008-06-02 2009-12-03 Wacker Chemie Ag Verfahren zur Konvertierung von Siliciumtetrachlorid oder Gemischen aus Siliciumtetrachlorid und Dichlorsilan mit Methan
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
DE102009047234A1 (de) 2009-11-27 2010-08-19 Wacker Chemie Ag Verfahren zur Konvertierung von Siliciumtetrachlorid mit Gemischen aus Methan und Wasserstoff
JP2019112288A (ja) * 2017-12-26 2019-07-11 京セラ株式会社 炭化ケイ素部材および半導体製造装置用部材

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3524679B2 (ja) * 1996-06-21 2004-05-10 東芝セラミックス株式会社 高純度ＣＶＤ−ＳｉＣ質の半導体熱処理用部材及びその製造方法

Also Published As

Publication number Publication date
DE69913906T2 (de) 2004-11-18
KR20000028804A (ko) 2000-05-25
JP2000109366A (ja) 2000-04-18
TW428056B (en) 2001-04-01
EP0992608B1 (de) 2004-01-02
EP0992608A1 (de) 2000-04-12
US6147020A (en) 2000-11-14
KR100315533B1 (ko) 2001-11-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee