DE69913906D1 - Lichtundurchlässiger Siliziumkarbidwerkstoff hoher Reinheit, ein lichtundurchlässiges Bauteil für eine Halbleiterbehandlungsapparatur, und eine Halbleiterbehandlungsapparatur - Google Patents
Lichtundurchlässiger Siliziumkarbidwerkstoff hoher Reinheit, ein lichtundurchlässiges Bauteil für eine Halbleiterbehandlungsapparatur, und eine HalbleiterbehandlungsapparaturInfo
- Publication number
- DE69913906D1 DE69913906D1 DE69913906T DE69913906T DE69913906D1 DE 69913906 D1 DE69913906 D1 DE 69913906D1 DE 69913906 T DE69913906 T DE 69913906T DE 69913906 T DE69913906 T DE 69913906T DE 69913906 D1 DE69913906 D1 DE 69913906D1
- Authority
- DE
- Germany
- Prior art keywords
- treatment apparatus
- semiconductor treatment
- opaque
- silicon carbide
- high purity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 239000000463 material Substances 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Ceramic Engineering (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10285291A JP2000109366A (ja) | 1998-10-07 | 1998-10-07 | 光不透過性の高純度炭化珪素材、半導体処理装置用遮光材および半導体処理装置 |
JP28529198 | 1998-10-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69913906D1 true DE69913906D1 (de) | 2004-02-05 |
DE69913906T2 DE69913906T2 (de) | 2004-11-18 |
Family
ID=17689630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1999613906 Expired - Fee Related DE69913906T2 (de) | 1998-10-07 | 1999-10-06 | Lichtundurchlässiger Siliziumkarbidwerkstoff hoher Reinheit, ein lichtundurchlässiger Bauteil für eine Halbleiterbehandlungsapparatur, und eine Halbleiterbehandlungsapparatur |
Country Status (6)
Country | Link |
---|---|
US (1) | US6147020A (de) |
EP (1) | EP0992608B1 (de) |
JP (1) | JP2000109366A (de) |
KR (1) | KR100315533B1 (de) |
DE (1) | DE69913906T2 (de) |
TW (1) | TW428056B (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3932154B2 (ja) * | 1998-10-16 | 2007-06-20 | 東海カーボン株式会社 | SiC成形体及びその製造方法 |
EP1043420A1 (de) * | 1999-04-07 | 2000-10-11 | Ngk Insulators, Ltd. | Siliziumkarbid-Formkörper |
JP3648112B2 (ja) * | 1999-11-26 | 2005-05-18 | 東芝セラミックス株式会社 | CVD−SiC自立膜構造体、及びその製造方法 |
JP2002313888A (ja) * | 2001-04-09 | 2002-10-25 | Ibiden Co Ltd | 半導体用治具 |
DE10328842B4 (de) | 2003-06-26 | 2007-03-01 | Siltronic Ag | Suszeptor für eine chemische Gasphasenabscheidung, Verfahren zur Bearbeitung einer Halbleiterscheibe durch chemische Gasphasenabscheidung und nach dem Verfahren bearbeitete Halbleiterscheibe |
DE102008002164A1 (de) | 2008-06-02 | 2009-12-03 | Wacker Chemie Ag | Verfahren zur Konvertierung von Siliciumtetrachlorid oder Gemischen aus Siliciumtetrachlorid und Dichlorsilan mit Methan |
JP5415853B2 (ja) * | 2009-07-10 | 2014-02-12 | 東京エレクトロン株式会社 | 表面処理方法 |
DE102009047234A1 (de) | 2009-11-27 | 2010-08-19 | Wacker Chemie Ag | Verfahren zur Konvertierung von Siliciumtetrachlorid mit Gemischen aus Methan und Wasserstoff |
JP2019112288A (ja) * | 2017-12-26 | 2019-07-11 | 京セラ株式会社 | 炭化ケイ素部材および半導体製造装置用部材 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3524679B2 (ja) * | 1996-06-21 | 2004-05-10 | 東芝セラミックス株式会社 | 高純度CVD−SiC質の半導体熱処理用部材及びその製造方法 |
-
1998
- 1998-10-07 JP JP10285291A patent/JP2000109366A/ja not_active Withdrawn
-
1999
- 1999-09-03 TW TW088115198A patent/TW428056B/zh not_active IP Right Cessation
- 1999-10-04 KR KR1019990042547A patent/KR100315533B1/ko not_active IP Right Cessation
- 1999-10-05 US US09/412,959 patent/US6147020A/en not_active Expired - Fee Related
- 1999-10-06 DE DE1999613906 patent/DE69913906T2/de not_active Expired - Fee Related
- 1999-10-06 EP EP99307859A patent/EP0992608B1/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69913906T2 (de) | 2004-11-18 |
KR20000028804A (ko) | 2000-05-25 |
JP2000109366A (ja) | 2000-04-18 |
TW428056B (en) | 2001-04-01 |
EP0992608B1 (de) | 2004-01-02 |
EP0992608A1 (de) | 2000-04-12 |
US6147020A (en) | 2000-11-14 |
KR100315533B1 (ko) | 2001-11-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |