DE69900210D1 - Einkristallines Siliziumwafer und Verfahren zu seiner Herstellung - Google Patents

Einkristallines Siliziumwafer und Verfahren zu seiner Herstellung

Info

Publication number
DE69900210D1
DE69900210D1 DE69900210T DE69900210T DE69900210D1 DE 69900210 D1 DE69900210 D1 DE 69900210D1 DE 69900210 T DE69900210 T DE 69900210T DE 69900210 T DE69900210 T DE 69900210T DE 69900210 D1 DE69900210 D1 DE 69900210D1
Authority
DE
Germany
Prior art keywords
manufacture
silicon wafer
crystalline silicon
single crystalline
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69900210T
Other languages
English (en)
Other versions
DE69900210T2 (de
Inventor
Masaro Tamatsuka
Akihiro Kimura
Katsuhiko Miki
Makoto Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69900210D1 publication Critical patent/DE69900210D1/de
Publication of DE69900210T2 publication Critical patent/DE69900210T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Control Of Temperature (AREA)
DE69900210T 1998-06-03 1999-05-21 Einkristallines Siliziumwafer und Verfahren zu seiner Herstellung Expired - Lifetime DE69900210T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10170629A JPH11349393A (ja) 1998-06-03 1998-06-03 シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法

Publications (2)

Publication Number Publication Date
DE69900210D1 true DE69900210D1 (de) 2001-09-13
DE69900210T2 DE69900210T2 (de) 2002-05-08

Family

ID=15908422

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69900210T Expired - Lifetime DE69900210T2 (de) 1998-06-03 1999-05-21 Einkristallines Siliziumwafer und Verfahren zu seiner Herstellung

Country Status (6)

Country Link
US (1) US6299982B1 (de)
EP (1) EP0962557B1 (de)
JP (1) JPH11349393A (de)
KR (1) KR100582239B1 (de)
DE (1) DE69900210T2 (de)
TW (1) TWI225113B (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69841714D1 (de) 1997-04-09 2010-07-22 Memc Electronic Materials Silicium mit niedriger Fehlerdichte und idealem Sauerstoffniederschlag
JP2003517412A (ja) 1998-06-26 2003-05-27 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 任意に大きい直径を有する無欠陥シリコン結晶の成長方法
DE69908965T2 (de) 1998-10-14 2004-05-13 Memc Electronic Materials, Inc. Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
US6284039B1 (en) 1998-10-14 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
EP1127962B1 (de) 1999-08-30 2003-12-10 Shin-Etsu Handotai Co., Ltd Verfahren zur herstellung eines siliziumeinkristalls damit hergestellter siliziumeinkristall und siliziumwafer
US6391662B1 (en) 1999-09-23 2002-05-21 Memc Electronic Materials, Inc. Process for detecting agglomerated intrinsic point defects by metal decoration
JP2003510235A (ja) * 1999-09-23 2003-03-18 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 冷却速度を制御することにより単結晶シリコンを成長させるチョクラルスキー法
JP3551867B2 (ja) * 1999-11-09 2004-08-11 信越化学工業株式会社 シリコンフォーカスリング及びその製造方法
JP2001220291A (ja) * 2000-02-01 2001-08-14 Komatsu Electronic Metals Co Ltd シリコンウエハの製造方法
US6733585B2 (en) * 2000-02-01 2004-05-11 Komatsu Denshi Kinzoku Kabushiki Kaisha Apparatus for pulling single crystal by CZ method
DE10014650A1 (de) * 2000-03-24 2001-10-04 Wacker Siltronic Halbleitermat Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe
JP2001278692A (ja) 2000-03-29 2001-10-10 Shin Etsu Handotai Co Ltd シリコンウエーハおよびシリコン単結晶の製造方法
US6835245B2 (en) * 2000-06-22 2004-12-28 Sumitomo Mitsubishi Silicon Corporation Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor
JP4718668B2 (ja) * 2000-06-26 2011-07-06 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6986925B2 (en) * 2001-01-02 2006-01-17 Memc Electronic Materials, Inc. Single crystal silicon having improved gate oxide integrity
US6846539B2 (en) 2001-01-26 2005-01-25 Memc Electronic Materials, Inc. Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
JP2002353282A (ja) * 2001-05-30 2002-12-06 Shin Etsu Handotai Co Ltd シリコン単結晶ウェーハ中の窒素濃度の評価方法
JP4567251B2 (ja) 2001-09-14 2010-10-20 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
JP4549589B2 (ja) * 2001-09-14 2010-09-22 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
KR100445189B1 (ko) * 2001-10-22 2004-08-21 주식회사 실트론 실리콘 단결정 잉곳 제조시 질소 도핑방법과 실리콘 단결정 잉곳 성장장치 및 질소도핑용 첨가제
KR100588425B1 (ko) * 2003-03-27 2006-06-12 실트로닉 아게 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법
US7014704B2 (en) 2003-06-06 2006-03-21 Sumitomo Mitsubishi Silicon Corporation Method for growing silicon single crystal
JP4854936B2 (ja) * 2004-06-15 2012-01-18 信越半導体株式会社 シリコンウエーハの製造方法及びシリコンウエーハ
JP2006273631A (ja) * 2005-03-28 2006-10-12 Komatsu Electronic Metals Co Ltd シリコン単結晶の製造方法およびアニールウェーハおよびアニールウェーハの製造方法
MY157902A (en) 2006-05-19 2016-08-15 Memc Electronic Materials Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during cz growth
EP2309038B1 (de) * 2009-10-08 2013-01-02 Siltronic AG Herstellungsverfahren eines Epitaxial-Wafers
KR101472349B1 (ko) * 2013-05-21 2014-12-12 주식회사 엘지실트론 반도체용 실리콘 단결정 잉곳 및 웨이퍼

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4591409A (en) 1984-05-03 1986-05-27 Texas Instruments Incorporated Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth
JPS60251190A (ja) 1984-05-25 1985-12-11 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法
US4851358A (en) * 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
JPH0633235B2 (ja) 1989-04-05 1994-05-02 新日本製鐵株式会社 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
US5096839A (en) * 1989-09-20 1992-03-17 Kabushiki Kaisha Toshiba Silicon wafer with defined interstitial oxygen concentration
JPH06103714B2 (ja) 1990-11-22 1994-12-14 信越半導体株式会社 シリコン単結晶の電気特性検査方法
JP3285111B2 (ja) * 1994-12-05 2002-05-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法
JPH08337490A (ja) 1995-06-09 1996-12-24 Shin Etsu Handotai Co Ltd 結晶欠陥の少ないシリコン単結晶及びその製造方法
JP3533812B2 (ja) * 1996-02-14 2004-05-31 信越半導体株式会社 チョクラルスキー法による結晶製造装置、結晶製造方法、およびこの方法から製造される結晶
DE19637182A1 (de) 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
CN1280455C (zh) * 1997-04-09 2006-10-18 Memc电子材料有限公司 低缺陷浓度的硅
TW508378B (en) * 1998-03-09 2002-11-01 Shinetsu Handotai Kk A method for producing a silicon single crystal wafer and a silicon single crystal wafer

Also Published As

Publication number Publication date
JPH11349393A (ja) 1999-12-21
DE69900210T2 (de) 2002-05-08
TWI225113B (en) 2004-12-11
US6299982B1 (en) 2001-10-09
KR20000005835A (ko) 2000-01-25
KR100582239B1 (ko) 2006-05-24
EP0962557A1 (de) 1999-12-08
EP0962557B1 (de) 2001-08-08

Similar Documents

Publication Publication Date Title
DE69900210T2 (de) Einkristallines Siliziumwafer und Verfahren zu seiner Herstellung
DE69935822D1 (de) Einkristalline Siliziumscheibe und Verfahren zu ihrer Herstellung
DE19983188T1 (de) Siliziumhalbleitersubstrat und Verfahren zu dessen Herstellung
DE69942263D1 (de) Einkristalline epitaktische Siliciumscheibe und Verfahren zu ihrer Herstellung
DE60101069D1 (de) Siliziumkarbid und Verfahren zu seiner Herstellung
DE69930700D1 (de) Halbleitersubstrat und Verfahren zu seiner Herstellung
DE69933169D1 (de) Einkristall Galliumnitridsubstrat und Verfahren zu dessen Herstellung
DE69835780D1 (de) Halbleiter-Speicherbauelement und Verfahren zu seiner Herstellung
DE69830024D1 (de) Verfahren zur Herstellung polykristalliner Halbleiter
DE69332231D1 (de) Halbleitersubstrat und Verfahren zu seiner Herstellung
DE60042666D1 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE69536084D1 (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
DE69941879D1 (de) Feldeffekt-halbleiterbauelement und verfahren zu dessen herstellung
DE69915729D1 (de) Stickstoffdotierte einkristalline Siliziumscheibe mit geringen Fehlstellen und Verfahren zu ihrer Herstellung
DE60124246D1 (de) Polykristallines silicium und verfahren zur herstellung desselben
DE69532907D1 (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE60105218D1 (de) Siliciumkarbid und Verfahren zu seiner Herstellung
DE69811824D1 (de) SiC-Einkristall und Verfahren zu seiner Herstellung
DE69627078D1 (de) Poröser Siliziumnitridkörper und Verfahren zu seiner Herstellung
DE60018635D1 (de) Monofilament und Verfahren zu seiner Herstellung
DE69829018D1 (de) Substrat und Verfahren zu dessen Herstellung
DE60015228D1 (de) Verfahren zur Herstellung von kristallinem Silizium
DE60019691D1 (de) Siliziumkarbid und Verfahren zu seiner Herstellung
DE60041429D1 (de) Verfahren zur herstellung von silicium einkristallen
DE69825397D1 (de) Einkristalliner siliziumkarbid und verfahren zu dessen herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition