DE69827459D1 - Vorrichtung und Verfahren zum Spalten - Google Patents

Vorrichtung und Verfahren zum Spalten

Info

Publication number
DE69827459D1
DE69827459D1 DE69827459T DE69827459T DE69827459D1 DE 69827459 D1 DE69827459 D1 DE 69827459D1 DE 69827459 T DE69827459 T DE 69827459T DE 69827459 T DE69827459 T DE 69827459T DE 69827459 D1 DE69827459 D1 DE 69827459D1
Authority
DE
Germany
Prior art keywords
bonded substrate
substrate stack
porous layer
stack
jet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69827459T
Other languages
English (en)
Other versions
DE69827459T2 (de
Inventor
Kazutaka Yanagita
Takao Yonehara
Kazuaki Omi
Kiyofumi Sakaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP36101297A external-priority patent/JPH11195568A/ja
Priority claimed from JP36101697A external-priority patent/JPH11195563A/ja
Priority claimed from JP4530898A external-priority patent/JPH11243040A/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69827459D1 publication Critical patent/DE69827459D1/de
Publication of DE69827459T2 publication Critical patent/DE69827459T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26F—PERFORATING; PUNCHING; CUTTING-OUT; STAMPING-OUT; SEVERING BY MEANS OTHER THAN CUTTING
    • B26F3/00—Severing by means other than cutting; Apparatus therefor
    • B26F3/004—Severing by means other than cutting; Apparatus therefor by means of a fluid jet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/934—Apparatus having delaminating means adapted for delaminating a specified article
    • Y10S156/941—Means for delaminating semiconductive product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1126—Using direct fluid current against work during delaminating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
    • Y10T156/1126—Using direct fluid current against work during delaminating
    • Y10T156/1137—Using air blast directly against work during delaminating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means
    • Y10T156/1933—Spraying delaminating means [e.g., atomizer, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means
    • Y10T156/1933—Spraying delaminating means [e.g., atomizer, etc.
    • Y10T156/1939—Air blasting delaminating means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49815—Disassembling
    • Y10T29/49821—Disassembling by altering or destroying work part or connector
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/364—By fluid blast and/or suction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Forests & Forestry (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
DE1998627459 1997-12-26 1998-12-18 Vorrichtung und Verfahren zum Spalten Expired - Lifetime DE69827459T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP36101297A JPH11195568A (ja) 1997-12-26 1997-12-26 試料の分離装置及びその方法並びに基板の製造方法
JP36101697 1997-12-26
JP36101697A JPH11195563A (ja) 1997-12-26 1997-12-26 試料の分離装置及びその方法並びに基板の製造方法
JP36101297 1997-12-26
JP4530898 1998-02-26
JP4530898A JPH11243040A (ja) 1998-02-26 1998-02-26 試料の分離装置及び分離方法並びに基板の製造方法

Publications (2)

Publication Number Publication Date
DE69827459D1 true DE69827459D1 (de) 2004-12-16
DE69827459T2 DE69827459T2 (de) 2005-10-20

Family

ID=27292180

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1998627459 Expired - Lifetime DE69827459T2 (de) 1997-12-26 1998-12-18 Vorrichtung und Verfahren zum Spalten

Country Status (8)

Country Link
US (3) US6418999B1 (de)
EP (1) EP0925888B1 (de)
KR (1) KR100366722B1 (de)
AT (1) ATE281909T1 (de)
AU (1) AU717785B2 (de)
DE (1) DE69827459T2 (de)
SG (2) SG87916A1 (de)
TW (1) TW429464B (de)

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JP6301137B2 (ja) * 2014-01-22 2018-03-28 株式会社ディスコ 分離装置
KR102305505B1 (ko) * 2014-09-29 2021-09-24 삼성전자주식회사 웨이퍼 서포팅 시스템 디본딩 이니시에이터 및 웨이퍼 서포팅 시스템 디본딩 방법
CN107665848B (zh) * 2016-07-29 2020-08-25 上海微电子装备（集团）股份有限公司 一种解键合调平装置及解键合方法
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KR0165467B1 (ko) * 1995-10-31 1999-02-01 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법
SG65697A1 (en) 1996-11-15 1999-06-22 Canon Kk Process for producing semiconductor article
CA2225131C (en) 1996-12-18 2002-01-01 Canon Kabushiki Kaisha Process for producing semiconductor article
SG71094A1 (en) 1997-03-26 2000-03-21 Canon Kk Thin film formation using laser beam heating to separate layers
CA2233127C (en) 1997-03-27 2004-07-06 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
US6245161B1 (en) 1997-05-12 2001-06-12 Silicon Genesis Corporation Economical silicon-on-silicon hybrid wafer assembly
CA2290104A1 (en) 1997-05-12 1998-11-19 Silicon Genesis Corporation A controlled cleavage process
JPH115064A (ja) * 1997-06-16 1999-01-12 Canon Inc 試料の分離装置及びその方法並びに基板の製造方法
US6263941B1 (en) * 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates

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EP0925888B1 (de) 2004-11-10
DE69827459T2 (de) 2005-10-20
AU717785B2 (en) 2000-03-30
AU9819098A (en) 1999-08-26
US20030102082A1 (en) 2003-06-05
US6860963B2 (en) 2005-03-01
SG70141A1 (en) 2000-01-25
KR100366722B1 (ko) 2003-02-19
US6418999B1 (en) 2002-07-16
ATE281909T1 (de) 2004-11-15
US20020134504A1 (en) 2002-09-26
KR19990063512A (ko) 1999-07-26
SG87916A1 (en) 2002-04-16
US6521078B2 (en) 2003-02-18
EP0925888A1 (de) 1999-06-30
TW429464B (en) 2001-04-11

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