DE69724175D1 - Verfahren und Gerät zur Belichtung mittels eines Ladungsträgerstrahls - Google Patents

Verfahren und Gerät zur Belichtung mittels eines Ladungsträgerstrahls

Info

Publication number
DE69724175D1
DE69724175D1 DE69724175T DE69724175T DE69724175D1 DE 69724175 D1 DE69724175 D1 DE 69724175D1 DE 69724175 T DE69724175 T DE 69724175T DE 69724175 T DE69724175 T DE 69724175T DE 69724175 D1 DE69724175 D1 DE 69724175D1
Authority
DE
Germany
Prior art keywords
exposure
charge carrier
carrier beam
charge
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69724175T
Other languages
English (en)
Other versions
DE69724175T2 (de
Inventor
Yoshihisa Ooae
Akio Yamada
Hiroshi Yasuda
Hitoshi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Fujitsu Semiconductor Ltd
Original Assignee
Advantest Corp
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp, Fujitsu Ltd filed Critical Advantest Corp
Application granted granted Critical
Publication of DE69724175D1 publication Critical patent/DE69724175D1/de
Publication of DE69724175T2 publication Critical patent/DE69724175T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/188—Differential pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31776—Shaped beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Sources, Ion Sources (AREA)
DE69724175T 1996-03-19 1997-03-18 Verfahren und Gerät zur Belichtung mittels eines Ladungsträgerstrahls Expired - Lifetime DE69724175T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP06242196A JP3827359B2 (ja) 1996-03-19 1996-03-19 荷電粒子ビーム露光方法及びその装置
JP6242196 1996-03-19

Publications (2)

Publication Number Publication Date
DE69724175D1 true DE69724175D1 (de) 2003-09-25
DE69724175T2 DE69724175T2 (de) 2004-02-26

Family

ID=13199683

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69724175T Expired - Lifetime DE69724175T2 (de) 1996-03-19 1997-03-18 Verfahren und Gerät zur Belichtung mittels eines Ladungsträgerstrahls

Country Status (6)

Country Link
US (1) US5981960A (de)
EP (1) EP0797236B1 (de)
JP (1) JP3827359B2 (de)
KR (1) KR100250558B1 (de)
DE (1) DE69724175T2 (de)
TW (1) TW464909B (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69835089T2 (de) * 1998-11-06 2007-02-08 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Strahlrohr für geladene Teilchen
US6394109B1 (en) * 1999-04-13 2002-05-28 Applied Materials, Inc. Method and apparatus for removing carbon contamination in a sub-atmospheric charged particle beam lithography system
GB2369241A (en) * 1999-06-03 2002-05-22 Advantest Corp Charged particle beam exposure device with aberration correction
JP2001052998A (ja) * 1999-06-03 2001-02-23 Advantest Corp 荷電粒子ビーム結像方法、荷電粒子ビーム結像装置及び荷電粒子ビーム露光装置
JP2001148340A (ja) * 1999-11-19 2001-05-29 Advantest Corp 荷電粒子ビーム露光方法及び装置
JP2001189265A (ja) * 2000-01-05 2001-07-10 Advantest Corp マスク、半導体素子製造方法、電子ビーム露光装置、荷電ビーム処理装置において用いられる部材
US6190062B1 (en) * 2000-04-26 2001-02-20 Advanced Micro Devices, Inc. Cleaning chamber built into SEM for plasma or gaseous phase cleaning
US7060330B2 (en) 2002-05-08 2006-06-13 Applied Materials, Inc. Method for forming ultra low k films using electron beam
US7323399B2 (en) * 2002-05-08 2008-01-29 Applied Materials, Inc. Clean process for an electron beam source
DE60323927D1 (de) * 2002-12-13 2008-11-20 Asml Netherlands Bv Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
JP3940378B2 (ja) * 2003-05-26 2007-07-04 沖電気工業株式会社 半導体露光装置の自己洗浄方法と自己洗浄用透過板
US7790583B2 (en) * 2004-02-20 2010-09-07 Applied Materials, Inc. Clean process for an electron beam source
JP2005268268A (ja) 2004-03-16 2005-09-29 Canon Inc 電子ビーム露光装置
US7355672B2 (en) * 2004-10-04 2008-04-08 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
US8092641B1 (en) * 2005-08-08 2012-01-10 Hermes-Microvision, Inc. System and method for removing organic residue from a charged particle beam system
JP2007088386A (ja) 2005-09-26 2007-04-05 Advantest Corp 電子ビーム露光装置及び電子ビーム露光装置のクリーニング方法
EP1826808B1 (de) 2006-02-23 2010-07-28 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Teilchenstrahlgerät mit Ozon-Quelle
JP4758431B2 (ja) * 2006-08-29 2011-08-31 株式会社アドバンテスト 電子ビーム露光装置及び電子ビーム露光装置のクリーニング方法
DE102009045008A1 (de) * 2008-10-15 2010-04-29 Carl Zeiss Smt Ag EUV-Lithographievorrichtung und Verfahren zum Bearbeiten einer Maske
TWI492261B (zh) * 2009-10-09 2015-07-11 Mapper Lithography Ip Bv 提高完整性的投影透鏡組件
JP4945698B1 (ja) * 2010-12-28 2012-06-06 株式会社Ｐａｒａｍ 電子ビーム装置
JP5709546B2 (ja) * 2011-01-19 2015-04-30 キヤノン株式会社 エネルギービーム描画装置及びデバイス製造方法
TWI477925B (zh) * 2011-10-04 2015-03-21 Nuflare Technology Inc Multi - beam charged particle beam mapping device and multi - beam charged particle beam rendering method
US9123507B2 (en) * 2012-03-20 2015-09-01 Mapper Lithography Ip B.V. Arrangement and method for transporting radicals
JP2015153763A (ja) * 2014-02-10 2015-08-24 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法
JP6296545B2 (ja) * 2014-05-22 2018-03-20 Ｎｅｃプラットフォームズ株式会社 電子ビーム装置、電子ビーム用フィラメントの製造装置及び製造方法
JP6251648B2 (ja) 2014-07-16 2017-12-20 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法
TWI598924B (zh) * 2014-09-19 2017-09-11 Nuflare Technology Inc Ozone supply device, ozone supply method, and charged particle beam drawing device
JP6496210B2 (ja) * 2015-08-12 2019-04-03 日本電子株式会社 荷電粒子線装置
US9981293B2 (en) * 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
JP6953276B2 (ja) * 2017-10-27 2021-10-27 株式会社ニューフレアテクノロジー 描画装置およびその制御方法
JP6460501B2 (ja) * 2018-02-08 2019-01-30 Ｎｅｃプラットフォームズ株式会社 電子ビーム装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0109147A3 (de) * 1982-10-19 1986-04-16 Varian Associates, Inc. Geladene Teilchen Strahl-Lithographiegerät mit einer Vorrichtung zur Erzeugung eines lokalisierten Vakuums
JPH0727855B2 (ja) * 1984-08-31 1995-03-29 富士通株式会社 電子ビーム露光装置のクリーニング方法
US4820927A (en) * 1985-06-28 1989-04-11 Control Data Corporation Electron beam source employing a photo-emitter cathode
JPH01158731A (ja) * 1987-12-15 1989-06-21 Fujitsu Ltd 光電子転写露光方法およびこれに用いられるマスク
JPH02244719A (ja) * 1989-03-17 1990-09-28 Fujitsu Ltd ドライエッチング装置
JP3253675B2 (ja) * 1991-07-04 2002-02-04 株式会社東芝 荷電ビーム照射装置及び方法
US5466942A (en) * 1991-07-04 1995-11-14 Kabushiki Kaisha Toshiba Charged beam irradiating apparatus having a cleaning means and a method of cleaning a charged beam irradiating apparatus
JPH05109610A (ja) * 1991-10-14 1993-04-30 Nippon Telegr & Teleph Corp <Ntt> 電子ビーム露光装置及びその装置による微細パターン形成法
US5401974A (en) * 1993-03-18 1995-03-28 Fujitsu Limited Charged particle beam exposure apparatus and method of cleaning the same
JP3466744B2 (ja) * 1993-12-29 2003-11-17 株式会社東芝 洗浄機能付き荷電ビーム装置および荷電ビーム装置の洗浄方法

Also Published As

Publication number Publication date
JP3827359B2 (ja) 2006-09-27
KR100250558B1 (ko) 2000-06-01
DE69724175T2 (de) 2004-02-26
EP0797236A2 (de) 1997-09-24
US5981960A (en) 1999-11-09
TW464909B (en) 2001-11-21
EP0797236B1 (de) 2003-08-20
KR970067580A (ko) 1997-10-13
EP0797236A3 (de) 1999-11-24
JPH09259811A (ja) 1997-10-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: ADVANTEST CORP., TOKIO/TOKYO, JP

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: ADVANTEST CORP., TOKIO/TOKYO, JP

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE