DE69604895T2 - Haltevorrichtung zur Wärmebehandlung und Verfahren zu deren Herstellung - Google Patents

Haltevorrichtung zur Wärmebehandlung und Verfahren zu deren Herstellung

Info

Publication number
DE69604895T2
DE69604895T2 DE69604895T DE69604895T DE69604895T2 DE 69604895 T2 DE69604895 T2 DE 69604895T2 DE 69604895 T DE69604895 T DE 69604895T DE 69604895 T DE69604895 T DE 69604895T DE 69604895 T2 DE69604895 T2 DE 69604895T2
Authority
DE
Germany
Prior art keywords
production
heat treatment
holding device
holding
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69604895T
Other languages
English (en)
Other versions
DE69604895D1 (de
Inventor
Yoshio Funato
Hisao Yamamoto
Koji Furukawa
Nobuo Kageyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai Carbon Co Ltd
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Tokai Carbon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd, Tokai Carbon Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of DE69604895D1 publication Critical patent/DE69604895D1/de
Publication of DE69604895T2 publication Critical patent/DE69604895T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25H—WORKSHOP EQUIPMENT, e.g. FOR MARKING-OUT WORK; STORAGE MEANS FOR WORKSHOPS
    • B25H1/00—Work benches; Portable stands or supports for positioning portable tools or work to be operated on thereby
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00241—Physical properties of the materials not provided for elsewhere in C04B2111/00
    • C04B2111/0025—Compositions or ingredients of the compositions characterised by the crystal structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
DE69604895T 1995-12-26 1996-12-20 Haltevorrichtung zur Wärmebehandlung und Verfahren zu deren Herstellung Expired - Lifetime DE69604895T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35209895 1995-12-26

Publications (2)

Publication Number Publication Date
DE69604895D1 DE69604895D1 (de) 1999-12-02
DE69604895T2 true DE69604895T2 (de) 2000-05-18

Family

ID=18421771

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69604895T Expired - Lifetime DE69604895T2 (de) 1995-12-26 1996-12-20 Haltevorrichtung zur Wärmebehandlung und Verfahren zu deren Herstellung

Country Status (5)

Country Link
US (1) US5882807A (de)
EP (1) EP0781739B1 (de)
KR (2) KR970033622A (de)
DE (1) DE69604895T2 (de)
TW (1) TW340179B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10287483A (ja) * 1997-04-09 1998-10-27 Ngk Insulators Ltd 気密部品およびその製造方法
EP0901152B1 (de) * 1997-09-03 2003-04-02 Nippon Pillar Packing Co., Ltd. Träger für einen Halbleiterwafer mit einer CVD Siliziumkarbiden Filmbeschichtung
JP4166346B2 (ja) * 1997-10-27 2008-10-15 日本碍子株式会社 耐蝕性部材、耐蝕性部材の製造方法および腐食性物質の加熱装置
JP2891978B1 (ja) * 1998-02-17 1999-05-17 日本ピラー工業株式会社 炭化珪素質構造体
US6631934B1 (en) * 2000-06-02 2003-10-14 Saint-Gobain Ceramics & Plastics, Inc. Silicon carbide cantilever paddle
JP2002231649A (ja) * 2001-01-30 2002-08-16 Tokyo Electron Ltd 加熱処理装置とウェーハ支持リング
EP1772901B1 (de) * 2005-10-07 2012-07-25 Rohm and Haas Electronic Materials, L.L.C. Waferhalter und Verfahren zur Halbleiterverarbeitung
JP5134375B2 (ja) * 2006-01-13 2013-01-30 日本碍子株式会社 ヒータの支持構造
TWI361469B (en) * 2007-03-09 2012-04-01 Rohm & Haas Elect Mat Chemical vapor deposited silicon carbide articles
WO2010091473A1 (en) * 2009-02-12 2010-08-19 Griffith University A chemical vapour deposition system and process
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
KR101138440B1 (ko) 2010-06-17 2012-04-26 투비엠테크 주식회사 실리콘카바이드 강화 다공성 모재 및 그 형성방법
WO2022205480A1 (zh) * 2021-04-02 2022-10-06 眉山博雅新材料有限公司 一种组合晶体制备方法和***
CN112521154A (zh) * 2020-12-22 2021-03-19 中国科学院上海硅酸盐研究所 具有高纯工作表面的SiC陶瓷器件及其制备方法和应用
CN114890819B (zh) * 2022-05-30 2023-11-03 无锡海飞凌科技有限公司 一种陶瓷表面碳化硅涂层的工艺

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL244520A (de) 1958-10-23
US3951587A (en) 1974-12-06 1976-04-20 Norton Company Silicon carbide diffusion furnace components
US4301132A (en) * 1979-05-08 1981-11-17 United Kingdom Atomic Energy Authority Silicon carbide bodies and their production
US4564494A (en) * 1982-07-06 1986-01-14 Honeywell Inc. Encapsulant of CdTe boules for multiblade wafering
GB8324166D0 (en) * 1983-09-09 1983-10-12 Atomic Energy Authority Uk Reaction-bonded silicon carbide bodies
JPS63222086A (ja) * 1987-03-10 1988-09-14 東芝セラミツクス株式会社 ＳｉＣ焼結体
JPH01145400A (ja) * 1987-11-30 1989-06-07 Toshiba Ceramics Co Ltd シリコンウェハー加熱用治具
US4999228A (en) * 1988-05-06 1991-03-12 Shin-Etsu Chemical Co., Ltd. Silicon carbide diffusion tube for semi-conductor
JPH03153876A (ja) * 1989-11-10 1991-07-01 Shin Etsu Chem Co Ltd 炭化珪素質部材
JPH0796473B2 (ja) * 1990-06-08 1995-10-18 東海カーボン株式会社 炭素繊維強化炭素材の耐酸化処理法
JPH0465374A (ja) * 1990-07-05 1992-03-02 Asahi Glass Co Ltd シリコン含浸炭化珪素質セラミックスへの炭化珪素被膜の形成方法
DE4129102A1 (de) * 1991-09-02 1993-03-04 Dornier Gmbh Verfahren zur sic-abscheidung aus der gasphase
JPH0692761A (ja) * 1992-09-10 1994-04-05 Shin Etsu Chem Co Ltd ＣＶＤ−ＳｉＣコートＳｉ含浸ＳｉＣ製品およびその製造方法

Also Published As

Publication number Publication date
EP0781739A1 (de) 1997-07-02
TW340179B (en) 1998-09-11
EP0781739B1 (de) 1999-10-27
US5882807A (en) 1999-03-16
DE69604895D1 (de) 1999-12-02
KR970033622A (ko) 1997-07-22
KR100427118B1 (ko) 2004-07-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: MUELLER-WOLFF, T., DIPL.-ING., PAT.-ANW., 53113 BON