DE69534581D1 - Feld-Effekt-Halbleiterbauelement und sein Herstellungsverfahren - Google Patents
Feld-Effekt-Halbleiterbauelement und sein HerstellungsverfahrenInfo
- Publication number
- DE69534581D1 DE69534581D1 DE69534581T DE69534581T DE69534581D1 DE 69534581 D1 DE69534581 D1 DE 69534581D1 DE 69534581 T DE69534581 T DE 69534581T DE 69534581 T DE69534581 T DE 69534581T DE 69534581 D1 DE69534581 D1 DE 69534581D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- field
- semiconductor device
- effect semiconductor
- effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Protection Of Static Devices (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP02951694A JP3361874B2 (ja) | 1994-02-28 | 1994-02-28 | 電界効果型半導体装置 |
JP2951694 | 1994-02-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69534581D1 true DE69534581D1 (de) | 2005-12-15 |
DE69534581T2 DE69534581T2 (de) | 2006-08-10 |
Family
ID=12278270
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69534581T Expired - Lifetime DE69534581T2 (de) | 1994-02-28 | 1995-02-24 | Feld-Effekt-Halbleiterbauelement und sein Herstellungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US5729032A (de) |
EP (1) | EP0669658B1 (de) |
JP (1) | JP3361874B2 (de) |
KR (1) | KR0169552B1 (de) |
DE (1) | DE69534581T2 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6002153A (en) * | 1995-12-07 | 1999-12-14 | Kabushiki Kaisha Toshiba | MOS type semiconductor device with a current detecting function |
JPH10125896A (ja) * | 1996-10-16 | 1998-05-15 | Fuji Electric Co Ltd | 絶縁ゲート型サイリスタ |
JP3480811B2 (ja) | 1997-07-15 | 2003-12-22 | 株式会社東芝 | 電圧駆動型電力用半導体装置 |
JP3382172B2 (ja) * | 1999-02-04 | 2003-03-04 | 株式会社日立製作所 | 横型絶縁ゲートバイポーラトランジスタ |
US6717785B2 (en) * | 2000-03-31 | 2004-04-06 | Denso Corporation | Semiconductor switching element driving circuit |
JP2003069019A (ja) * | 2001-08-29 | 2003-03-07 | Toshiba Corp | 半導体装置およびその製造方法 |
US7135748B2 (en) * | 2004-10-26 | 2006-11-14 | Power Integrations, Inc. | Integrated circuit with multi-length output transistor segment |
US20060086974A1 (en) * | 2004-10-26 | 2006-04-27 | Power Integrations, Inc. | Integrated circuit with multi-length power transistor segments |
DE112009004805B4 (de) * | 2009-05-28 | 2019-03-28 | Toyota Jidosha Kabushiki Kaisha | Halbleitervorrichtung |
JP5369300B2 (ja) * | 2009-09-16 | 2013-12-18 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP5779025B2 (ja) * | 2010-11-08 | 2015-09-16 | 株式会社東芝 | 半導体装置 |
JP2013115223A (ja) * | 2011-11-29 | 2013-06-10 | Toyota Motor Corp | 半導体装置 |
US20150179758A1 (en) * | 2012-07-20 | 2015-06-25 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacturing the same |
WO2014097739A1 (ja) | 2012-12-17 | 2014-06-26 | 富士電機株式会社 | 半導体装置およびその半導体装置を用いた電流検出回路 |
KR101413294B1 (ko) * | 2013-03-28 | 2014-06-27 | 메이플세미컨덕터(주) | 전력용 센스 모스펫 |
JP6320808B2 (ja) | 2014-03-19 | 2018-05-09 | 富士電機株式会社 | トレンチmos型半導体装置 |
JP6510310B2 (ja) | 2014-05-12 | 2019-05-08 | ローム株式会社 | 半導体装置 |
JP6772328B2 (ja) * | 2014-05-12 | 2020-10-21 | ローム株式会社 | 半導体装置 |
US10355127B2 (en) * | 2015-07-02 | 2019-07-16 | Mitsubishi Electric Corporation | Semiconductor device |
US10056370B2 (en) | 2015-07-16 | 2018-08-21 | Fuji Electric Co., Ltd. | Semiconductor device |
US10505028B2 (en) | 2015-09-16 | 2019-12-10 | Fuji Electric Co., Ltd. | Semiconductor device including a shoulder portion and manufacturing method |
JP6787348B2 (ja) | 2016-02-17 | 2020-11-18 | 富士電機株式会社 | 半導体素子の過電流保護装置 |
JP2018067621A (ja) * | 2016-10-19 | 2018-04-26 | トヨタ自動車株式会社 | 半導体装置およびその製造方法 |
JP6825298B2 (ja) * | 2016-10-19 | 2021-02-03 | トヨタ自動車株式会社 | 半導体装置 |
JP6939059B2 (ja) | 2017-04-27 | 2021-09-22 | 富士電機株式会社 | 半導体素子の駆動装置 |
JP7205091B2 (ja) | 2018-07-18 | 2023-01-17 | 富士電機株式会社 | 半導体装置 |
JP7223543B2 (ja) | 2018-10-05 | 2023-02-16 | ローム株式会社 | 半導体装置 |
KR102153550B1 (ko) * | 2019-05-08 | 2020-09-08 | 현대오트론 주식회사 | 전력 반도체 소자 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53121579A (en) * | 1977-03-31 | 1978-10-24 | Toshiba Corp | Semiconductor integrated circuit |
US4135102A (en) * | 1977-07-18 | 1979-01-16 | Mostek Corporation | High performance inverter circuits |
JPS56162861A (en) * | 1980-05-20 | 1981-12-15 | Nec Corp | Semiconductor integrated circuit device |
JPS60132359A (ja) * | 1983-12-20 | 1985-07-15 | Nec Corp | 過電圧保護用半導体装置 |
US4893158A (en) * | 1987-06-22 | 1990-01-09 | Nissan Motor Co., Ltd. | MOSFET device |
US5055721A (en) * | 1989-04-13 | 1991-10-08 | Mitsubishi Denki Kabushiki Kaisha | Drive circuit for igbt device |
JP2892415B2 (ja) * | 1990-02-01 | 1999-05-17 | 沖電気工業株式会社 | 半導体素子の製造方法 |
JPH03235368A (ja) * | 1990-02-10 | 1991-10-21 | Toshiba Corp | 半導体装置 |
JP2876694B2 (ja) * | 1990-03-20 | 1999-03-31 | 富士電機株式会社 | 電流検出端子を備えたmos型半導体装置 |
JPH04297039A (ja) * | 1991-03-26 | 1992-10-21 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
DE4219019B4 (de) * | 1991-06-10 | 2004-12-16 | Fuji Electric Co., Ltd., Kawasaki | MOS-Halbleiterbauelement |
US5321281A (en) * | 1992-03-18 | 1994-06-14 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device and method of fabricating same |
JPH05291913A (ja) * | 1992-04-08 | 1993-11-05 | Fuji Electric Co Ltd | 半導体スイッチング装置 |
GB9207849D0 (en) * | 1992-04-09 | 1992-05-27 | Philips Electronics Uk Ltd | A semiconductor device |
-
1994
- 1994-02-28 JP JP02951694A patent/JP3361874B2/ja not_active Expired - Lifetime
-
1995
- 1995-02-07 US US08/386,059 patent/US5729032A/en not_active Expired - Lifetime
- 1995-02-21 KR KR1019950003392A patent/KR0169552B1/ko not_active IP Right Cessation
- 1995-02-24 DE DE69534581T patent/DE69534581T2/de not_active Expired - Lifetime
- 1995-02-24 EP EP95102678A patent/EP0669658B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5729032A (en) | 1998-03-17 |
KR950026034A (ko) | 1995-09-18 |
JPH07240516A (ja) | 1995-09-12 |
DE69534581T2 (de) | 2006-08-10 |
JP3361874B2 (ja) | 2003-01-07 |
KR0169552B1 (ko) | 1999-01-15 |
EP0669658A2 (de) | 1995-08-30 |
EP0669658B1 (de) | 2005-11-09 |
EP0669658A3 (de) | 1999-10-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |