DE69532617D1 - Target für die Kathodenzerstäubung mit ultrafeinen orienterten Körnern - Google Patents
Target für die Kathodenzerstäubung mit ultrafeinen orienterten KörnernInfo
- Publication number
- DE69532617D1 DE69532617D1 DE69532617T DE69532617T DE69532617D1 DE 69532617 D1 DE69532617 D1 DE 69532617D1 DE 69532617 T DE69532617 T DE 69532617T DE 69532617 T DE69532617 T DE 69532617T DE 69532617 D1 DE69532617 D1 DE 69532617D1
- Authority
- DE
- Germany
- Prior art keywords
- ultra
- target
- cathode sputtering
- oriented grains
- fine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C23/00—Extruding metal; Impact extrusion
- B21C23/001—Extruding metal; Impact extrusion to improve the material properties, e.g. lateral extrusion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C23/00—Extruding metal; Impact extrusion
- B21C23/01—Extruding metal; Impact extrusion starting from material of particular form or shape, e.g. mechanically pre-treated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/115—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by spraying molten metal, i.e. spray sintering, spray casting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/20—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by extruding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0408—Light metal alloys
- C22C1/0416—Aluminium-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Composite Materials (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US363397 | 1994-12-23 | ||
US08/363,397 US5590389A (en) | 1994-12-23 | 1994-12-23 | Sputtering target with ultra-fine, oriented grains and method of making same |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69532617D1 true DE69532617D1 (de) | 2004-04-01 |
DE69532617T2 DE69532617T2 (de) | 2005-02-03 |
Family
ID=23430046
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69526649T Expired - Lifetime DE69526649T2 (de) | 1994-12-23 | 1995-12-22 | Sputter-target mit ultrafeinen orientierten körnern und verfahren zu deren herstellung |
DE69532617T Expired - Lifetime DE69532617T2 (de) | 1994-12-23 | 1995-12-22 | Target für die Kathodenzerstäubung mit ultrafeinen orienterten Körnern |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69526649T Expired - Lifetime DE69526649T2 (de) | 1994-12-23 | 1995-12-22 | Sputter-target mit ultrafeinen orientierten körnern und verfahren zu deren herstellung |
Country Status (6)
Country | Link |
---|---|
US (3) | US5590389A (de) |
EP (2) | EP1053810B1 (de) |
JP (1) | JP3597539B2 (de) |
KR (1) | KR100217484B1 (de) |
DE (2) | DE69526649T2 (de) |
WO (1) | WO1996020055A1 (de) |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5500301A (en) * | 1991-03-07 | 1996-03-19 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
FR2756572B1 (fr) * | 1996-12-04 | 1999-01-08 | Pechiney Aluminium | Alliages d'aluminium a temperature de recristallisation elevee utilisee dans les cibles de pulverisation cathodiques |
JP3365954B2 (ja) * | 1997-04-14 | 2003-01-14 | 株式会社神戸製鋼所 | 半導体電極用Al−Ni−Y 合金薄膜および半導体電極用Al−Ni−Y 合金薄膜形成用スパッタリングターゲット |
US6569270B2 (en) | 1997-07-11 | 2003-05-27 | Honeywell International Inc. | Process for producing a metal article |
US6001227A (en) * | 1997-11-26 | 1999-12-14 | Applied Materials, Inc. | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target |
US6315872B1 (en) | 1997-11-26 | 2001-11-13 | Applied Materials, Inc. | Coil for sputter deposition |
US6139701A (en) * | 1997-11-26 | 2000-10-31 | Applied Materials, Inc. | Copper target for sputter deposition |
US6348139B1 (en) | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
US6348113B1 (en) * | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
US6858102B1 (en) | 2000-11-15 | 2005-02-22 | Honeywell International Inc. | Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets |
US6113761A (en) | 1999-06-02 | 2000-09-05 | Johnson Matthey Electronics, Inc. | Copper sputtering target assembly and method of making same |
US6521173B2 (en) * | 1999-08-19 | 2003-02-18 | H.C. Starck, Inc. | Low oxygen refractory metal powder for powder metallurgy |
US6432819B1 (en) | 1999-09-27 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus of forming a sputtered doped seed layer |
US6391163B1 (en) | 1999-09-27 | 2002-05-21 | Applied Materials, Inc. | Method of enhancing hardness of sputter deposited copper films |
US6423161B1 (en) | 1999-10-15 | 2002-07-23 | Honeywell International Inc. | High purity aluminum materials |
EP1232525A2 (de) * | 1999-11-24 | 2002-08-21 | Honeywell International, Inc. | Leitende verbindung |
US6878250B1 (en) * | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
US20040072009A1 (en) * | 1999-12-16 | 2004-04-15 | Segal Vladimir M. | Copper sputtering targets and methods of forming copper sputtering targets |
US6780794B2 (en) * | 2000-01-20 | 2004-08-24 | Honeywell International Inc. | Methods of bonding physical vapor deposition target materials to backing plate materials |
US6331233B1 (en) | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
US7517417B2 (en) * | 2000-02-02 | 2009-04-14 | Honeywell International Inc. | Tantalum PVD component producing methods |
US6698647B1 (en) | 2000-03-10 | 2004-03-02 | Honeywell International Inc. | Aluminum-comprising target/backing plate structures |
US20010047838A1 (en) * | 2000-03-28 | 2001-12-06 | Segal Vladimir M. | Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions |
US6399215B1 (en) | 2000-03-28 | 2002-06-04 | The Regents Of The University Of California | Ultrafine-grained titanium for medical implants |
DE10017414A1 (de) * | 2000-04-07 | 2001-10-11 | Unaxis Materials Deutschland G | Sputtertarget auf der Basis eines Metalls oder einer Metalllegierung und Verfahren zu dessen Herstellung |
US6197129B1 (en) * | 2000-05-04 | 2001-03-06 | The United States Of America As Represented By The United States Department Of Energy | Method for producing ultrafine-grained materials using repetitive corrugation and straightening |
CN1328409C (zh) | 2000-05-22 | 2007-07-25 | 卡伯特公司 | 铌溅射靶及其制造方法 |
AU6512601A (en) * | 2000-06-02 | 2001-12-17 | Honeywell Int Inc | Sputtering method, apparatus, and target for reduced arcing |
AU2001265309A1 (en) * | 2000-06-02 | 2001-12-17 | Honeywell International, Inc. | Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method |
US7041204B1 (en) * | 2000-10-27 | 2006-05-09 | Honeywell International Inc. | Physical vapor deposition components and methods of formation |
US6946039B1 (en) * | 2000-11-02 | 2005-09-20 | Honeywell International Inc. | Physical vapor deposition targets, and methods of fabricating metallic materials |
MXPA03007490A (es) * | 2001-02-20 | 2004-09-06 | Starck H C Inc | Chapas de metal refractario con textura uniforme y metodos de hacerlas. |
AU2001265276A1 (en) * | 2001-05-01 | 2002-11-11 | Honeywell International Inc. | Sputter targets comprising ti and zr |
EP1419283A1 (de) * | 2001-08-13 | 2004-05-19 | N.V. Bekaert S.A. | Verfahren zur herstellung eines sputter-targets |
US7081148B2 (en) * | 2001-09-18 | 2006-07-25 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
US6770154B2 (en) * | 2001-09-18 | 2004-08-03 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
JP2003105468A (ja) * | 2001-09-25 | 2003-04-09 | Furukawa Electric Co Ltd:The | 端子用アルミニウム合金材料および前記材料からなる端子 |
US6605199B2 (en) * | 2001-11-14 | 2003-08-12 | Praxair S.T. Technology, Inc. | Textured-metastable aluminum alloy sputter targets and method of manufacture |
CN100350079C (zh) * | 2001-11-16 | 2007-11-21 | 霍尼韦尔国际公司 | 用于电镀操作的阳极以及在半导体基体上形成材料的方法 |
US6883359B1 (en) * | 2001-12-20 | 2005-04-26 | The Texas A&M University System | Equal channel angular extrusion method |
US6976380B1 (en) | 2002-01-24 | 2005-12-20 | The Texas A&M University System | Developing the texture of a material |
US20040129559A1 (en) * | 2002-04-12 | 2004-07-08 | Misner Josh W. | Diffusion bonded assemblies and fabrication methods |
ES2224787B1 (es) * | 2002-05-13 | 2006-02-01 | Universidad Publica De Navarra | Procesado continuo de materiales metalicos mediante deformacion plastica en canal poliangular. |
US20040256218A1 (en) * | 2002-05-31 | 2004-12-23 | Glass Howard L. | Thin films and methods of forming thin films utilizing ECAE-targets |
US6895795B1 (en) | 2002-06-26 | 2005-05-24 | General Dynamics Ots (Garland), L.P. | Continuous severe plastic deformation process for metallic materials |
US20040016635A1 (en) * | 2002-07-19 | 2004-01-29 | Ford Robert B. | Monolithic sputtering target assembly |
JP4388263B2 (ja) * | 2002-09-11 | 2009-12-24 | 日鉱金属株式会社 | 珪化鉄スパッタリングターゲット及びその製造方法 |
JP4526758B2 (ja) * | 2002-09-11 | 2010-08-18 | 日鉱金属株式会社 | 珪化鉄粉末及びその製造方法 |
DE602004028129D1 (de) * | 2003-08-11 | 2010-08-26 | Honeywell Int Inc | Target/trägerplatte-konstruktionen und herstellungsverfahren dafür |
WO2005021828A2 (en) * | 2003-08-21 | 2005-03-10 | Honeywell International Inc. | Copper-containing pvd targets and methods for their manufacture |
JP4593475B2 (ja) * | 2003-11-06 | 2010-12-08 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット |
US8252126B2 (en) | 2004-05-06 | 2012-08-28 | Global Advanced Metals, Usa, Inc. | Sputter targets and methods of forming same by rotary axial forging |
KR100607106B1 (ko) * | 2004-11-29 | 2006-08-02 | 한국과학기술연구원 | 소재의 두께를 균일하게 제어하는 연속 전단가공 장치 |
DE102005003445B4 (de) * | 2005-01-21 | 2009-06-04 | H.C. Starck Hermsdorf Gmbh | Metallsubstrat-Werkstoff für die Anodenteller von Drehanodenröntgenröhren, Verfahren zur Herstellung eines solchen Werkstoffes sowie Verfahren zur Herstellung eines Anodentellers unter Verwendung eines solchen Werkstoffes |
US20060201589A1 (en) * | 2005-03-11 | 2006-09-14 | Honeywell International Inc. | Components comprising metallic material, physical vapor deposition targets, thin films, and methods of forming metallic components |
KR100734811B1 (ko) * | 2005-09-16 | 2007-07-03 | 한국기초과학지원연구원 | 고품질의 대면적 글래시 산화물 타겟의 제조방법 및 그제조방법에 의한 타겟 |
US20070074970A1 (en) * | 2005-09-20 | 2007-04-05 | Cp Technologies, Inc. | Device and method of manufacturing sputtering targets |
US20070084527A1 (en) * | 2005-10-19 | 2007-04-19 | Stephane Ferrasse | High-strength mechanical and structural components, and methods of making high-strength components |
US7935382B2 (en) * | 2005-12-20 | 2011-05-03 | Momentive Performance Materials, Inc. | Method for making crystalline composition |
US20070169853A1 (en) * | 2006-01-23 | 2007-07-26 | Heraeus, Inc. | Magnetic sputter targets manufactured using directional solidification |
US20070251818A1 (en) * | 2006-05-01 | 2007-11-01 | Wuwen Yi | Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets |
US20070251819A1 (en) * | 2006-05-01 | 2007-11-01 | Kardokus Janine K | Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets |
TW200811304A (en) * | 2006-07-17 | 2008-03-01 | Howmet Corp | Method of making sputtering target and target produced |
US8702919B2 (en) | 2007-08-13 | 2014-04-22 | Honeywell International Inc. | Target designs and related methods for coupled target assemblies, methods of production and uses thereof |
JP5696051B2 (ja) * | 2008-11-03 | 2015-04-08 | トーソー エスエムディー,インク. | スパッターターゲットを製造する方法 |
WO2010085316A1 (en) | 2009-01-22 | 2010-07-29 | Tosoh Smd, Inc. | Monolithic aluminum alloy target and method of manufacturing |
US9142226B2 (en) | 2012-06-29 | 2015-09-22 | Seagate Technology Llc | Thin film with tuned grain size |
US9034150B2 (en) | 2012-11-29 | 2015-05-19 | Seagate Technology Llc | Thin film with tuned anisotropy and magnetic moment |
US20140271336A1 (en) | 2013-03-15 | 2014-09-18 | Crs Holdings Inc. | Nanostructured Titanium Alloy And Method For Thermomechanically Processing The Same |
RU2534324C1 (ru) * | 2013-10-11 | 2014-11-27 | Федеральное государственное бюджетное учреждение науки Институт физики прочности и материаловедения Сибирского отделения Российской академии наук (ИФПМ СО РАН) | Способ изготовления композиционного катода для нанесения многокомпонентных ионно-плазменных покрытий |
JP5828350B2 (ja) * | 2014-04-11 | 2015-12-02 | 三菱マテリアル株式会社 | 円筒型スパッタリングターゲット用素材の製造方法 |
US9378760B2 (en) | 2014-07-31 | 2016-06-28 | Seagate Technology Llc | Data reader with tuned microstructure |
CN108026634A (zh) | 2015-08-03 | 2018-05-11 | 霍尼韦尔国际公司 | 具有改善性质的无摩擦锻造铝合金溅射靶 |
US10900102B2 (en) | 2016-09-30 | 2021-01-26 | Honeywell International Inc. | High strength aluminum alloy backing plate and methods of making |
CN106734297A (zh) * | 2016-11-24 | 2017-05-31 | 上海电机学院 | 钛废弃切屑再制造的t型通道挤压固化方法 |
CN108866489B (zh) * | 2017-05-16 | 2020-05-19 | 中国科学院金属研究所 | 一种具有抗菌功能的钛合金纳米涂层及其制备方法 |
US11062889B2 (en) | 2017-06-26 | 2021-07-13 | Tosoh Smd, Inc. | Method of production of uniform metal plates and sputtering targets made thereby |
JP2019173048A (ja) * | 2018-03-26 | 2019-10-10 | Jx金属株式会社 | スパッタリングターゲット部材及びその製造方法 |
CN111266586A (zh) * | 2020-03-02 | 2020-06-12 | 合肥尚德新材料有限公司 | 一种制备大尺寸高致密度含稀土ito铝靶材的方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4016738A (en) * | 1976-04-27 | 1977-04-12 | Alexandr Vladimirovich Puchko | Traverse wedge forming machine |
US4198283A (en) * | 1978-11-06 | 1980-04-15 | Materials Research Corporation | Magnetron sputtering target and cathode assembly |
JPH0796701B2 (ja) * | 1984-12-12 | 1995-10-18 | 日立金属株式会社 | スパッタ用ターゲットとその製造方法 |
US4971674A (en) * | 1986-08-06 | 1990-11-20 | Ube Industries, Ltd. | Magnetron sputtering method and apparatus |
US4961831A (en) * | 1986-12-23 | 1990-10-09 | Balzers Aktiengesellschaft | Composite material having a slide layer applied by cathode sputtering |
ATE80671T1 (de) * | 1986-12-23 | 1992-10-15 | Balzers Hochvakuum | Verbundwerkstoff mit einer durch kathodenzerstaeubung aufgebrachten gleitschicht. |
JPS63216966A (ja) * | 1987-03-06 | 1988-09-09 | Toshiba Corp | スパツタタ−ゲツト |
JPS63241164A (ja) * | 1987-03-30 | 1988-10-06 | Toshiba Corp | スパッタリングターゲットおよび電気配線用合金膜 |
US4963239A (en) * | 1988-01-29 | 1990-10-16 | Hitachi, Ltd. | Sputtering process and an apparatus for carrying out the same |
US4964968A (en) * | 1988-04-30 | 1990-10-23 | Mitsubishi Kasei Corp. | Magnetron sputtering apparatus |
JPH01290765A (ja) * | 1988-05-16 | 1989-11-22 | Toshiba Corp | スパッタリングターゲット |
US4964962A (en) * | 1988-10-08 | 1990-10-23 | Matsushita Electric Works, Ltd. | Method for forming conducting metal layer on inorganic substrate |
US4961832A (en) * | 1989-03-14 | 1990-10-09 | Shagun Vladimir A | Apparatus for applying film coatings onto substrates in vacuum |
JP2712561B2 (ja) * | 1989-05-26 | 1998-02-16 | 住友化学工業株式会社 | スパッタリング用アルミニウムターゲット |
JPH0313570A (ja) * | 1989-06-09 | 1991-01-22 | Mitsubishi Electric Corp | 半導体製造装置及び半導体製造装置用ターゲット |
JPH0371510A (ja) * | 1989-08-10 | 1991-03-27 | Showa Denko Kk | 透明導電膜 |
KR930701633A (ko) * | 1990-07-03 | 1993-06-12 | 챨스 이. 위커샴 2세 | 컴팩트 디스크 코팅을 위한 개량된 스퍼터 타게트와 그 사용 방법 및 타게트의 제조방법 |
JP2934714B2 (ja) * | 1990-08-22 | 1999-08-16 | カシオ計算機株式会社 | 合金薄膜の形成方法 |
US5087297A (en) * | 1991-01-17 | 1992-02-11 | Johnson Matthey Inc. | Aluminum target for magnetron sputtering and method of making same |
US5400633A (en) * | 1993-09-03 | 1995-03-28 | The Texas A&M University System | Apparatus and method for deformation processing of metals, ceramics, plastics and other materials |
JP3002369U (ja) | 1994-03-25 | 1994-09-20 | ホン シェン ウェイ | 三脚スタンドの固定構造 |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
-
1994
- 1994-12-23 US US08/363,397 patent/US5590389A/en not_active Expired - Lifetime
-
1995
- 1995-10-30 US US08/544,970 patent/US5809393A/en not_active Expired - Fee Related
- 1995-10-30 US US08/544,971 patent/US5780755A/en not_active Expired - Lifetime
- 1995-12-22 DE DE69526649T patent/DE69526649T2/de not_active Expired - Lifetime
- 1995-12-22 DE DE69532617T patent/DE69532617T2/de not_active Expired - Lifetime
- 1995-12-22 EP EP00118588A patent/EP1053810B1/de not_active Expired - Lifetime
- 1995-12-22 WO PCT/US1995/016794 patent/WO1996020055A1/en active IP Right Grant
- 1995-12-22 EP EP95944653A patent/EP0746436B1/de not_active Expired - Lifetime
- 1995-12-22 KR KR1019960704629A patent/KR100217484B1/ko not_active IP Right Cessation
- 1995-12-22 JP JP52055496A patent/JP3597539B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3597539B2 (ja) | 2004-12-08 |
DE69532617T2 (de) | 2005-02-03 |
US5780755A (en) | 1998-07-14 |
EP1053810B1 (de) | 2004-02-25 |
EP0746436B1 (de) | 2002-05-08 |
WO1996020055A1 (en) | 1996-07-04 |
JPH09509985A (ja) | 1997-10-07 |
US5809393A (en) | 1998-09-15 |
US5590389A (en) | 1996-12-31 |
EP0746436A4 (de) | 1997-05-07 |
KR100217484B1 (ko) | 1999-09-01 |
EP1053810A2 (de) | 2000-11-22 |
EP0746436A1 (de) | 1996-12-11 |
DE69526649D1 (de) | 2002-06-13 |
DE69526649T2 (de) | 2002-12-05 |
EP1053810A3 (de) | 2000-11-29 |
KR970701113A (ko) | 1997-03-17 |
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