DE69523208T2 - Verfahren zur Reinigung von Halbleiterscheiben mittels verflüssigter Gase - Google Patents

Verfahren zur Reinigung von Halbleiterscheiben mittels verflüssigter Gase

Info

Publication number
DE69523208T2
DE69523208T2 DE69523208T DE69523208T DE69523208T2 DE 69523208 T2 DE69523208 T2 DE 69523208T2 DE 69523208 T DE69523208 T DE 69523208T DE 69523208 T DE69523208 T DE 69523208T DE 69523208 T2 DE69523208 T2 DE 69523208T2
Authority
DE
Germany
Prior art keywords
semiconductor wafers
liquefied gases
cleaning semiconductor
cleaning
liquefied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69523208T
Other languages
English (en)
Other versions
DE69523208D1 (de
Inventor
Ajit P Paranjpe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69523208D1 publication Critical patent/DE69523208D1/de
Publication of DE69523208T2 publication Critical patent/DE69523208T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046Dry cleaning only
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00Cleaning and liquid contact with solids
    • Y10S134/902Semiconductor wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
DE69523208T 1994-04-08 1995-04-07 Verfahren zur Reinigung von Halbleiterscheiben mittels verflüssigter Gase Expired - Fee Related DE69523208T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22516494A 1994-04-08 1994-04-08

Publications (2)

Publication Number Publication Date
DE69523208D1 DE69523208D1 (de) 2001-11-22
DE69523208T2 true DE69523208T2 (de) 2002-06-27

Family

ID=22843800

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69523208T Expired - Fee Related DE69523208T2 (de) 1994-04-08 1995-04-07 Verfahren zur Reinigung von Halbleiterscheiben mittels verflüssigter Gase

Country Status (4)

Country Link
US (1) US5494526A (de)
EP (1) EP0681317B1 (de)
JP (1) JPH07302776A (de)
DE (1) DE69523208T2 (de)

Families Citing this family (141)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3320549B2 (ja) * 1994-04-26 2002-09-03 岩手東芝エレクトロニクス株式会社 被膜除去方法および被膜除去剤
JPH08330266A (ja) * 1995-05-31 1996-12-13 Texas Instr Inc <Ti> 半導体装置等の表面を浄化し、処理する方法
US5653045A (en) * 1995-06-07 1997-08-05 Ferrell; Gary W. Method and apparatus for drying parts and microelectronic components using sonic created mist
US6239038B1 (en) 1995-10-13 2001-05-29 Ziying Wen Method for chemical processing semiconductor wafers
US5868856A (en) * 1996-07-25 1999-02-09 Texas Instruments Incorporated Method for removing inorganic contamination by chemical derivitization and extraction
KR19980018262A (ko) * 1996-08-01 1998-06-05 윌리엄 비.켐플러 입출력포트 및 램 메모리 어드레스 지정기술
US6039059A (en) * 1996-09-30 2000-03-21 Verteq, Inc. Wafer cleaning system
US6312528B1 (en) 1997-03-06 2001-11-06 Cri Recycling Service, Inc. Removal of contaminants from materials
US6045588A (en) 1997-04-29 2000-04-04 Whirlpool Corporation Non-aqueous washing apparatus and method
US7534304B2 (en) * 1997-04-29 2009-05-19 Whirlpool Corporation Non-aqueous washing machine and methods
US6500605B1 (en) 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
US6306564B1 (en) 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US5807439A (en) * 1997-09-29 1998-09-15 Siemens Aktiengesellschaft Apparatus and method for improved washing and drying of semiconductor wafers
US6001418A (en) * 1997-12-16 1999-12-14 The University Of North Carolina At Chapel Hill Spin coating method and apparatus for liquid carbon dioxide systems
US6383289B2 (en) 1997-12-16 2002-05-07 The University Of North Carolina At Chapel Hill Apparatus for liquid carbon dioxide systems
US6849153B2 (en) * 1998-04-16 2005-02-01 Siemens Aktiengesellschaft Removal of post-rie polymer on A1/CU metal line
US6343609B1 (en) 1998-08-13 2002-02-05 International Business Machines Corporation Cleaning with liquified gas and megasonics
US7064070B2 (en) * 1998-09-28 2006-06-20 Tokyo Electron Limited Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
US6277753B1 (en) 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
US6460552B1 (en) * 1998-10-05 2002-10-08 Lorimer D'arcy H. Method and apparatus for cleaning flat workpieces
US6090217A (en) * 1998-12-09 2000-07-18 Kittle; Paul A. Surface treatment of semiconductor substrates
US6612317B2 (en) 2000-04-18 2003-09-02 S.C. Fluids, Inc Supercritical fluid delivery and recovery system for semiconductor wafer processing
US6602349B2 (en) 1999-08-05 2003-08-05 S.C. Fluids, Inc. Supercritical fluid cleaning process for precision surfaces
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
US20040025908A1 (en) * 2000-04-18 2004-02-12 Stephen Douglas Supercritical fluid delivery system for semiconductor wafer processing
CN1216415C (zh) * 2000-04-25 2005-08-24 东京毅力科创株式会社 沉积金属薄膜的方法和包括超临界干燥/清洁组件的金属沉积组合工具
KR100750018B1 (ko) * 2000-07-26 2007-08-16 동경 엘렉트론 주식회사 반도체 기판의 처리를 위한 고압 챔버 및 반도체 기판의고압 처리를 위한 장치
US6766813B1 (en) * 2000-08-01 2004-07-27 Board Of Regents, The University Of Texas System Apparatus and method for cleaning a wafer
JP4902091B2 (ja) * 2000-12-28 2012-03-21 義治 山本 半導体基板の洗浄装置
US6692579B2 (en) 2001-01-19 2004-02-17 Chartered Semiconductor Manufacturing Ltd. Method for cleaning semiconductor structures using hydrocarbon and solvents in a repetitive vapor phase/liquid phase sequence
US6562146B1 (en) 2001-02-15 2003-05-13 Micell Technologies, Inc. Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide
KR100777892B1 (ko) * 2001-04-10 2007-11-21 동경 엘렉트론 주식회사 반도체 기판 처리용 고압 챔버
US20030116176A1 (en) * 2001-04-18 2003-06-26 Rothman Laura B. Supercritical fluid processes with megasonics
US6706641B2 (en) 2001-09-13 2004-03-16 Micell Technologies, Inc. Spray member and method for using the same
US6782900B2 (en) * 2001-09-13 2004-08-31 Micell Technologies, Inc. Methods and apparatus for cleaning and/or treating a substrate using CO2
US6619304B2 (en) 2001-09-13 2003-09-16 Micell Technologies, Inc. Pressure chamber assembly including non-mechanical drive means
US6666928B2 (en) 2001-09-13 2003-12-23 Micell Technologies, Inc. Methods and apparatus for holding a substrate in a pressure chamber
US20030047551A1 (en) * 2001-09-13 2003-03-13 Worm Steven Lee Guard heater and pressure chamber assembly including the same
US6763840B2 (en) 2001-09-14 2004-07-20 Micell Technologies, Inc. Method and apparatus for cleaning substrates using liquid carbon dioxide
US20040040660A1 (en) * 2001-10-03 2004-03-04 Biberger Maximilian Albert High pressure processing chamber for multiple semiconductor substrates
US6701972B2 (en) 2002-01-11 2004-03-09 The Boc Group, Inc. Vacuum load lock, system including vacuum load lock, and associated methods
WO2003061860A1 (en) * 2002-01-24 2003-07-31 S. C. Fluids Inc. Supercritical fluid processes with megasonics
WO2003064065A1 (en) * 2002-01-25 2003-08-07 Supercritical Systems Inc. Method for reducing the formation of contaminants during supercritical carbon dioxide processes
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
US6928746B2 (en) * 2002-02-15 2005-08-16 Tokyo Electron Limited Drying resist with a solvent bath and supercritical CO2
JP4246640B2 (ja) 2002-03-04 2009-04-02 東京エレクトロン株式会社 ウェハ処理において低誘電率材料を不動態化する方法
US20040072706A1 (en) * 2002-03-22 2004-04-15 Arena-Foster Chantal J. Removal of contaminants using supercritical processing
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
CN101147908A (zh) 2002-05-20 2008-03-26 松下电器产业株式会社 清洗方法
WO2003097258A1 (fr) * 2002-05-20 2003-11-27 Matsushita Electric Industrial Co., Ltd. Procede et dispositif de lavage
US6846380B2 (en) * 2002-06-13 2005-01-25 The Boc Group, Inc. Substrate processing apparatus and related systems and methods
US20080000505A1 (en) * 2002-09-24 2008-01-03 Air Products And Chemicals, Inc. Processing of semiconductor components with dense processing fluids
US20080004194A1 (en) * 2002-09-24 2008-01-03 Air Products And Chemicals, Inc. Processing of semiconductor components with dense processing fluids
US7267727B2 (en) * 2002-09-24 2007-09-11 Air Products And Chemicals, Inc. Processing of semiconductor components with dense processing fluids and ultrasonic energy
US7232715B2 (en) * 2002-11-15 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor film and semiconductor device and laser processing apparatus
US6880560B2 (en) * 2002-11-18 2005-04-19 Techsonic Substrate processing apparatus for processing substrates using dense phase gas and sonic waves
US6997197B2 (en) * 2002-12-13 2006-02-14 International Business Machines Corporation Apparatus and method for rapid thermal control of a workpiece in liquid or dense phase fluid
US20040177867A1 (en) * 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
US6875286B2 (en) * 2002-12-16 2005-04-05 International Business Machines Corporation Solid CO2 cleaning
US20040112409A1 (en) * 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
US20040139987A1 (en) * 2003-01-13 2004-07-22 Mount David J. Method for releasing and drying moveable elements of micro-electronic mechanical structures with organic thin film sacrificial layers
US7021635B2 (en) 2003-02-06 2006-04-04 Tokyo Electron Limited Vacuum chuck utilizing sintered material and method of providing thereof
US20040154647A1 (en) * 2003-02-07 2004-08-12 Supercritical Systems, Inc. Method and apparatus of utilizing a coating for enhanced holding of a semiconductor substrate during high pressure processing
US7077917B2 (en) 2003-02-10 2006-07-18 Tokyo Electric Limited High-pressure processing chamber for a semiconductor wafer
US7225820B2 (en) 2003-02-10 2007-06-05 Tokyo Electron Limited High-pressure processing chamber for a semiconductor wafer
US7270137B2 (en) 2003-04-28 2007-09-18 Tokyo Electron Limited Apparatus and method of securing a workpiece during high-pressure processing
WO2004112093A2 (en) * 2003-06-06 2004-12-23 P.C.T. Systems, Inc. Method and apparatus to process substrates with megasonic energy
US20040261823A1 (en) * 2003-06-27 2004-12-30 Lam Research Corporation Method and apparatus for removing a target layer from a substrate using reactive gases
US8316866B2 (en) * 2003-06-27 2012-11-27 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US7799141B2 (en) * 2003-06-27 2010-09-21 Lam Research Corporation Method and system for using a two-phases substrate cleaning compound
US7913703B1 (en) 2003-06-27 2011-03-29 Lam Research Corporation Method and apparatus for uniformly applying a multi-phase cleaning solution to a substrate
US7737097B2 (en) * 2003-06-27 2010-06-15 Lam Research Corporation Method for removing contamination from a substrate and for making a cleaning solution
US7648584B2 (en) * 2003-06-27 2010-01-19 Lam Research Corporation Method and apparatus for removing contamination from substrate
US8522801B2 (en) * 2003-06-27 2013-09-03 Lam Research Corporation Method and apparatus for cleaning a semiconductor substrate
US20050029492A1 (en) * 2003-08-05 2005-02-10 Hoshang Subawalla Processing of semiconductor substrates with dense fluids comprising acetylenic diols and/or alcohols
US7739891B2 (en) * 2003-10-31 2010-06-22 Whirlpool Corporation Fabric laundering apparatus adapted for using a select rinse fluid
US7695524B2 (en) * 2003-10-31 2010-04-13 Whirlpool Corporation Non-aqueous washing machine and methods
US20050150059A1 (en) * 2003-10-31 2005-07-14 Luckman Joel A. Non-aqueous washing apparatus and method
US20050091755A1 (en) * 2003-10-31 2005-05-05 Conrad Daniel C. Non-aqueous washing machine & methods
US7513004B2 (en) * 2003-10-31 2009-04-07 Whirlpool Corporation Method for fluid recovery in a semi-aqueous wash process
US20050096242A1 (en) * 2003-10-31 2005-05-05 Luckman Joel A. Method for laundering fabric with a non-aqueous working fluid using a select rinse fluid
US20050222002A1 (en) * 2003-10-31 2005-10-06 Luckman Joel A Method for a semi-aqueous wash process
US20050096243A1 (en) * 2003-10-31 2005-05-05 Luckman Joel A. Fabric laundering using a select rinse fluid and wash fluids
US7186093B2 (en) 2004-10-05 2007-03-06 Tokyo Electron Limited Method and apparatus for cooling motor bearings of a high pressure pump
US7416370B2 (en) * 2005-06-15 2008-08-26 Lam Research Corporation Method and apparatus for transporting a substrate using non-Newtonian fluid
US7862662B2 (en) * 2005-12-30 2011-01-04 Lam Research Corporation Method and material for cleaning a substrate
US7568490B2 (en) * 2003-12-23 2009-08-04 Lam Research Corporation Method and apparatus for cleaning semiconductor wafers using compressed and/or pressurized foams, bubbles, and/or liquids
US8043441B2 (en) * 2005-06-15 2011-10-25 Lam Research Corporation Method and apparatus for cleaning a substrate using non-Newtonian fluids
US8323420B2 (en) 2005-06-30 2012-12-04 Lam Research Corporation Method for removing material from semiconductor wafer and apparatus for performing the same
US8522799B2 (en) * 2005-12-30 2013-09-03 Lam Research Corporation Apparatus and system for cleaning a substrate
US20050217709A1 (en) * 2004-03-31 2005-10-06 Reg Yang Cleaning mechanism for an image sensor package
US20050224099A1 (en) * 2004-04-13 2005-10-13 Luckman Joel A Method and apparatus for cleaning objects in an automatic cleaning appliance using an oxidizing agent
US7837741B2 (en) 2004-04-29 2010-11-23 Whirlpool Corporation Dry cleaning method
US20050279453A1 (en) * 2004-06-17 2005-12-22 Uvtech Systems, Inc. System and methods for surface cleaning
US7250374B2 (en) * 2004-06-30 2007-07-31 Tokyo Electron Limited System and method for processing a substrate using supercritical carbon dioxide processing
US7195676B2 (en) * 2004-07-13 2007-03-27 Air Products And Chemicals, Inc. Method for removal of flux and other residue in dense fluid systems
US7307019B2 (en) * 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7582181B2 (en) * 2004-09-30 2009-09-01 Tokyo Electron Limited Method and system for controlling a velocity field of a supercritical fluid in a processing system
US20060065288A1 (en) * 2004-09-30 2006-03-30 Darko Babic Supercritical fluid processing system having a coating on internal members and a method of using
US20060081273A1 (en) * 2004-10-20 2006-04-20 Mcdermott Wayne T Dense fluid compositions and processes using same for article treatment and residue removal
US7491036B2 (en) * 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US20060102590A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method for treating a substrate with a high pressure fluid using a preoxide-based process chemistry
US20060102591A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method and system for treating a substrate using a supercritical fluid
US20060102208A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited System for removing a residue from a substrate using supercritical carbon dioxide processing
US20060102204A1 (en) * 2004-11-12 2006-05-18 Tokyo Electron Limited Method for removing a residue from a substrate using supercritical carbon dioxide processing
US20060130966A1 (en) * 2004-12-20 2006-06-22 Darko Babic Method and system for flowing a supercritical fluid in a high pressure processing system
US7140393B2 (en) * 2004-12-22 2006-11-28 Tokyo Electron Limited Non-contact shuttle valve for flow diversion in high pressure systems
US20060134332A1 (en) * 2004-12-22 2006-06-22 Darko Babic Precompressed coating of internal members in a supercritical fluid processing system
US7434590B2 (en) * 2004-12-22 2008-10-14 Tokyo Electron Limited Method and apparatus for clamping a substrate in a high pressure processing system
US20060135047A1 (en) * 2004-12-22 2006-06-22 Alexei Sheydayi Method and apparatus for clamping a substrate in a high pressure processing system
US20060180174A1 (en) * 2005-02-15 2006-08-17 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator
US20060180572A1 (en) * 2005-02-15 2006-08-17 Tokyo Electron Limited Removal of post etch residue for a substrate with open metal surfaces
US7291565B2 (en) * 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7435447B2 (en) * 2005-02-15 2008-10-14 Tokyo Electron Limited Method and system for determining flow conditions in a high pressure processing system
US20060186088A1 (en) * 2005-02-23 2006-08-24 Gunilla Jacobson Etching and cleaning BPSG material using supercritical processing
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7767145B2 (en) 2005-03-28 2010-08-03 Toyko Electron Limited High pressure fourier transform infrared cell
US20060226117A1 (en) * 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US7399708B2 (en) * 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US20060255012A1 (en) * 2005-05-10 2006-11-16 Gunilla Jacobson Removal of particles from substrate surfaces using supercritical processing
US7789971B2 (en) * 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7966684B2 (en) * 2005-05-23 2011-06-28 Whirlpool Corporation Methods and apparatus to accelerate the drying of aqueous working fluids
US7524383B2 (en) * 2005-05-25 2009-04-28 Tokyo Electron Limited Method and system for passivating a processing chamber
US20070012337A1 (en) * 2005-07-15 2007-01-18 Tokyo Electron Limited In-line metrology for supercritical fluid processing
EP2428557A1 (de) * 2005-12-30 2012-03-14 LAM Research Corporation Reinigungslösung
TWI352628B (en) * 2006-07-21 2011-11-21 Akrion Technologies Inc Nozzle for use in the megasonic cleaning of substr
KR100757417B1 (ko) * 2006-08-04 2007-09-11 삼성전자주식회사 웨이퍼 세정 장치
US20080148595A1 (en) * 2006-12-20 2008-06-26 Lam Research Corporation Method and apparatus for drying substrates using a surface tensions reducing gas
US7897213B2 (en) * 2007-02-08 2011-03-01 Lam Research Corporation Methods for contained chemical surface treatment
US20080245390A1 (en) * 2007-04-03 2008-10-09 Lam Research Corporation Method for cleaning semiconductor wafer surfaces by applying periodic shear stress to the cleaning solution
US8084406B2 (en) 2007-12-14 2011-12-27 Lam Research Corporation Apparatus for particle removal by single-phase and two-phase media
TWI352615B (en) * 2009-06-09 2011-11-21 Univ Nat Taiwan Science Tech Fluid separation method and fluid seperation appar
JP5494146B2 (ja) * 2010-04-05 2014-05-14 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
WO2012024131A2 (en) * 2010-08-16 2012-02-23 Rasirc, Inc. Gas-liquid phase transition method and apparatus for cleaning of surfaces in semiconductor manufacturing
US8518189B2 (en) * 2010-12-02 2013-08-27 Globalfoundries Inc. Vapor clean for haze and particle removal from lithographic photomasks
KR102064552B1 (ko) * 2013-03-26 2020-01-10 삼성전자주식회사 기판 처리 장치
JP6876417B2 (ja) * 2016-12-02 2021-05-26 東京エレクトロン株式会社 基板処理装置の洗浄方法および基板処理装置の洗浄システム
US10269556B2 (en) * 2017-07-14 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for cleaning semiconductor device structure with gas flow
CN110404874B (zh) * 2019-06-25 2022-02-01 深圳市荣之鑫科技有限公司 集成电路板生产用电镀硅片清洗干燥装置
CN113644009B (zh) * 2021-07-15 2023-11-07 长江存储科技有限责任公司 清洗液生成方法、装置及清洗***的控制方法、装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4695327A (en) * 1985-06-13 1987-09-22 Purusar Corporation Surface treatment to remove impurities in microrecesses
US4816080A (en) * 1986-09-29 1989-03-28 The United States Of America As Represented By The Secretary Of The Army Method of washing solids with liquified gases
US4962776A (en) * 1987-03-26 1990-10-16 Regents Of The University Of Minnesota Process for surface and fluid cleaning
US5235995A (en) * 1989-03-27 1993-08-17 Semitool, Inc. Semiconductor processor apparatus with dynamic wafer vapor treatment and particulate volatilization
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
JP2794438B2 (ja) * 1989-02-16 1998-09-03 本多電子株式会社 キャビテーションを利用した洗浄方法
US5180438A (en) * 1989-10-11 1993-01-19 Hockh Metall-Reinigungsanlagen Gmbh Cleaning and drying system
US5115576A (en) * 1989-10-27 1992-05-26 Semifab Incorporated Vapor device and method for drying articles such as semiconductor wafers with substances such as isopropyl alcohol
US5090432A (en) * 1990-10-16 1992-02-25 Verteq, Inc. Single wafer megasonic semiconductor wafer processing system
US5201960A (en) * 1991-02-04 1993-04-13 Applied Photonics Research, Inc. Method for removing photoresist and other adherent materials from substrates
IT1251433B (it) * 1991-10-25 1995-05-09 Vomm Impianti & Processi Srl Macchina per la lavorazione di materiale in genere mediante centrifugazione e trattamento termico
US5273589A (en) * 1992-07-10 1993-12-28 Griswold Bradley L Method for low pressure rinsing and drying in a process chamber
US5316591A (en) * 1992-08-10 1994-05-31 Hughes Aircraft Company Cleaning by cavitation in liquefied gas

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EP0681317A3 (de) 1998-01-21
EP0681317A2 (de) 1995-11-08
US5494526A (en) 1996-02-27
DE69523208D1 (de) 2001-11-22
JPH07302776A (ja) 1995-11-14
EP0681317B1 (de) 2001-10-17

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