DE69521409T2 - Boraluminiumnitrid-Beschichtung und Verfahren zu ihrer Herstellung - Google Patents

Boraluminiumnitrid-Beschichtung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69521409T2
DE69521409T2 DE69521409T DE69521409T DE69521409T2 DE 69521409 T2 DE69521409 T2 DE 69521409T2 DE 69521409 T DE69521409 T DE 69521409T DE 69521409 T DE69521409 T DE 69521409T DE 69521409 T2 DE69521409 T2 DE 69521409T2
Authority
DE
Germany
Prior art keywords
production
aluminum nitride
nitride coating
boron aluminum
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69521409T
Other languages
English (en)
Other versions
DE69521409D1 (de
Inventor
Yoshiharu Utsumi
Takahiro Imai
Naoji Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP04168795A external-priority patent/JP3716440B2/ja
Priority claimed from JP30689995A external-priority patent/JPH09125229A/ja
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69521409D1 publication Critical patent/DE69521409D1/de
Publication of DE69521409T2 publication Critical patent/DE69521409T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
DE69521409T 1995-03-01 1995-11-21 Boraluminiumnitrid-Beschichtung und Verfahren zu ihrer Herstellung Expired - Lifetime DE69521409T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP04168795A JP3716440B2 (ja) 1995-03-01 1995-03-01 ホウ素含有窒化アルミニウム薄膜および製造方法
JP30689995A JPH09125229A (ja) 1995-10-30 1995-10-30 硬質被膜、硬質被覆部材及びその製造方法

Publications (2)

Publication Number Publication Date
DE69521409D1 DE69521409D1 (de) 2001-07-26
DE69521409T2 true DE69521409T2 (de) 2002-05-16

Family

ID=26381341

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69521409T Expired - Lifetime DE69521409T2 (de) 1995-03-01 1995-11-21 Boraluminiumnitrid-Beschichtung und Verfahren zu ihrer Herstellung

Country Status (3)

Country Link
US (1) US5766783A (de)
EP (1) EP0730044B1 (de)
DE (1) DE69521409T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012223195A1 (de) 2012-12-14 2014-06-18 Evonik Industries Ag Hochreine pulverförmige Halbmetallcarbid- und Halbmetallnitridverbindungen, Verfahren zu deren Herstellung und dafür geeigneter Reaktor

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19650181A1 (de) * 1996-12-04 1998-06-10 Bernd Dr Rother Thermisch verdichtende Schutzschicht
US6117574A (en) * 1997-10-20 2000-09-12 Agency Of Industrial Science And Technology Triboluminescent inorganic material and a method for preparation thereof
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
US6607782B1 (en) * 2000-06-29 2003-08-19 Board Of Trustees Of The University Of Arkansas Methods of making and using cubic boron nitride composition, coating and articles made therefrom
JP3925132B2 (ja) 2000-09-27 2007-06-06 セイコーエプソン株式会社 表面弾性波素子、周波数フィルタ、周波数発振器、電子回路、及び電子機器
US6911084B2 (en) * 2001-09-26 2005-06-28 Arizona Board Of Regents Low temperature epitaxial growth of quaternary wide bandgap semiconductors
EP1436448A1 (de) * 2001-10-16 2004-07-14 Arizona Board Of Regents, a Body corporate acting on behalf of Arizona State University Epitaktisches aufwachsen von quaternären halbleitern mit grosser bandlücke bei niedriger temperatur
WO2004005216A1 (ja) * 2002-07-09 2004-01-15 Kenichiro Miyahara 薄膜形成用基板、薄膜基板、光導波路、発光素子、及び発光素子搭載用基板
WO2005092610A1 (en) * 2003-04-28 2005-10-06 Drexel University Boron nitride-aluminum (ban) interfaces and coatings and methods for their production and use
DE112005000529B4 (de) * 2004-03-30 2011-04-28 Showa Denko K.K., Minato-ku Verbindungshalbleiter-Vorrichtung, Herstellungsverfahren der Verbindungshalbleiter-Vorrichtung und Diode
EP1851369A1 (de) 2005-01-26 2007-11-07 Apollo Diamond, Inc. Lichtemittierende galliumnitridvorrichtungen auf diamant
US7510760B2 (en) * 2005-03-07 2009-03-31 Boardof Trustees Of The University Of Arkansas Nanoparticle compositions, coatings and articles made therefrom, methods of making and using said compositions, coatings and articles
US10100266B2 (en) 2006-01-12 2018-10-16 The Board Of Trustees Of The University Of Arkansas Dielectric nanolubricant compositions
EP1973998B1 (de) 2006-01-12 2022-06-08 The Board Of Trustees Of The University Of Arkansas Nanopartikel-zusammensetzungen und verfahren zu deren herstellung und verwendung
US8758863B2 (en) 2006-10-19 2014-06-24 The Board Of Trustees Of The University Of Arkansas Methods and apparatus for making coatings using electrostatic spray
MX349614B (es) 2006-10-19 2017-07-26 Nanomech Inc Metodos y aparatos para elaborar recubrimientos utilizando deposicion de rocio ultrasonico.
US7557378B2 (en) * 2006-11-08 2009-07-07 Raytheon Company Boron aluminum nitride diamond heterostructure
JP4590025B2 (ja) 2008-04-22 2010-12-01 新日本製鐵株式会社 めっき鋼板及びめっき鋼板の熱間プレス方法
US8853745B2 (en) * 2009-01-20 2014-10-07 Raytheon Company Silicon based opto-electric circuits
WO2010122274A1 (en) * 2009-04-24 2010-10-28 Panasonic Corporation Oxide semiconductor
US7994550B2 (en) * 2009-05-22 2011-08-09 Raytheon Company Semiconductor structures having both elemental and compound semiconductor devices on a common substrate
US8212294B2 (en) * 2010-01-28 2012-07-03 Raytheon Company Structure having silicon CMOS transistors with column III-V transistors on a common substrate
US8395165B2 (en) 2011-07-08 2013-03-12 Bridelux, Inc. Laterally contacted blue LED with superlattice current spreading layer
US20130026480A1 (en) 2011-07-25 2013-01-31 Bridgelux, Inc. Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
US8916906B2 (en) 2011-07-29 2014-12-23 Kabushiki Kaisha Toshiba Boron-containing buffer layer for growing gallium nitride on silicon
US9012939B2 (en) 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
US8865565B2 (en) 2011-08-02 2014-10-21 Kabushiki Kaisha Toshiba LED having a low defect N-type layer that has grown on a silicon substrate
US9142743B2 (en) 2011-08-02 2015-09-22 Kabushiki Kaisha Toshiba High temperature gold-free wafer bonding for light emitting diodes
US9343641B2 (en) 2011-08-02 2016-05-17 Manutius Ip, Inc. Non-reactive barrier metal for eutectic bonding process
US20130032810A1 (en) 2011-08-03 2013-02-07 Bridgelux, Inc. Led on silicon substrate using zinc-sulfide as buffer layer
US8564010B2 (en) 2011-08-04 2013-10-22 Toshiba Techno Center Inc. Distributed current blocking structures for light emitting diodes
US8686430B2 (en) 2011-09-07 2014-04-01 Toshiba Techno Center Inc. Buffer layer for GaN-on-Si LED
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
TWI479486B (zh) * 2011-11-15 2015-04-01 Ritedia Corp 光透射氮化鋁保護層及相關裝置及方法
GR1008013B (el) * 2012-04-25 2013-10-22 Ιδρυμα Τεχνολογιας Και Ερευνας (Ιτε), Μεθοδος ετεροεπιταξιακης αναπτυξης ιιι-νιτριδιων, πολικοτητας μετωπου-μεταλλου ιιι, πανω σε υποστρωματα αδαμαντα
US8476206B1 (en) 2012-07-02 2013-07-02 Ajay P. Malshe Nanoparticle macro-compositions
US8486870B1 (en) 2012-07-02 2013-07-16 Ajay P. Malshe Textured surfaces to enhance nano-lubrication
WO2014087799A1 (ja) * 2012-12-05 2014-06-12 株式会社村田製作所 圧電部材、弾性波装置及び圧電部材の製造方法
US8823146B1 (en) * 2013-02-19 2014-09-02 Raytheon Company Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices
US9703011B2 (en) 2013-05-07 2017-07-11 Corning Incorporated Scratch-resistant articles with a gradient layer
US9110230B2 (en) 2013-05-07 2015-08-18 Corning Incorporated Scratch-resistant articles with retained optical properties
US9366784B2 (en) 2013-05-07 2016-06-14 Corning Incorporated Low-color scratch-resistant articles with a multilayer optical film
US9684097B2 (en) * 2013-05-07 2017-06-20 Corning Incorporated Scratch-resistant articles with retained optical properties
US9359261B2 (en) 2013-05-07 2016-06-07 Corning Incorporated Low-color scratch-resistant articles with a multilayer optical film
JP5756830B2 (ja) 2013-05-31 2015-07-29 サンケン電気株式会社 半導体基板、半導体装置、及び、半導体装置の製造方法
TWI603110B (zh) * 2013-09-13 2017-10-21 康寧公司 具有保留光學性質的防刮物件
EP3047048B8 (de) * 2013-09-18 2021-04-14 Raytheon Technologies Corporation Artikel mit einer beschichtung mit einer aluminium-, bor- und stickstoffverbindung
US11267973B2 (en) 2014-05-12 2022-03-08 Corning Incorporated Durable anti-reflective articles
US9335444B2 (en) 2014-05-12 2016-05-10 Corning Incorporated Durable and scratch-resistant anti-reflective articles
US9790593B2 (en) 2014-08-01 2017-10-17 Corning Incorporated Scratch-resistant materials and articles including the same
CN107735697B (zh) 2015-09-14 2020-10-30 康宁股份有限公司 减反射制品以及包含其的显示器装置
CN105977136A (zh) * 2016-05-27 2016-09-28 清华大学 半导体结构以及制备半导体结构的方法
WO2019187737A1 (ja) * 2018-03-29 2019-10-03 日本碍子株式会社 １３族元素窒化物層、自立基板、機能素子および１３族元素窒化物層の製造方法
EP3837223A1 (de) 2018-08-17 2021-06-23 Corning Incorporated Artikel aus anorganischem oxid mit dünnen beständigen antireflexionsstrukturen
CN110791805A (zh) * 2019-10-31 2020-02-14 中国电子科技集团公司第十三研究所 一种衬底、外延片及其生长方法
CN114763306A (zh) * 2021-01-15 2022-07-19 燕山大学 层状氮化硼晶界相增韧的闪锌矿氮化硼陶瓷及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922475A (en) * 1970-06-22 1975-11-25 Rockwell International Corp Process for producing nitride films
JPS6221778A (ja) * 1985-07-17 1987-01-30 東芝タンガロイ株式会社 立方晶窒化ホウ素被覆体及びその製造方法
JPS63239103A (ja) * 1987-03-27 1988-10-05 Ulvac Corp 立方晶窒化硼素被覆体およびその製造法
JP3140475B2 (ja) * 1991-03-28 2001-03-05 科学技術振興事業団 セラミック基板及びその製造方法
DE69319531T2 (de) * 1992-10-12 1999-04-15 Sumitomo Electric Industries Ultradünnes Filmlaminat
EP0669412B1 (de) * 1994-02-25 2002-05-22 Sumitomo Electric Industries, Ltd. Substrat für aluminium-nitrid dünne Film und Verfahren zu seiner Herstellung
JP3465345B2 (ja) * 1994-05-30 2003-11-10 住友電気工業株式会社 硼素含有窒化アルミニウム薄膜および製造方法
SE9404452D0 (sv) * 1994-12-22 1994-12-22 Abb Research Ltd Semiconductor device having an insulated gate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012223195A1 (de) 2012-12-14 2014-06-18 Evonik Industries Ag Hochreine pulverförmige Halbmetallcarbid- und Halbmetallnitridverbindungen, Verfahren zu deren Herstellung und dafür geeigneter Reaktor

Also Published As

Publication number Publication date
EP0730044B1 (de) 2001-06-20
EP0730044A2 (de) 1996-09-04
DE69521409D1 (de) 2001-07-26
US5766783A (en) 1998-06-16
EP0730044A3 (de) 1998-09-09

Similar Documents

Publication Publication Date Title
DE69521409T2 (de) Boraluminiumnitrid-Beschichtung und Verfahren zu ihrer Herstellung
DE59606535D1 (de) Furnacerusse und Verfahren zu ihrer Herstellung
ATE236161T1 (de) Purinderivate und verfahren zu ihrer herstellung
DE69636166D1 (de) Klebstoffzusammensetzung und verfahren zu ihrer herstellung
DE69607560T2 (de) Schleifblatt und Verfahren zu seiner Herstellung
DE69518595D1 (de) Bornitrid enthaltendes Material und Verfahren zu seiner Herstellung
DE69604733D1 (de) Diamantbeschichteter Gegenstand und Verfahren zu seiner Herstellung
DE69314223D1 (de) Beschichtete Hartmetallkörper und Verfahren zu ihrer Herstellung
DE69310402T2 (de) Beschichtungszusammensetzung und Verfahren zu ihrer Herstellung
DE69620405D1 (de) Verbesserte polyarylenetherzusammensetzungen und verfahren zu ihrer herstellung
DE59603578D1 (de) Flachdichtung und verfahren zu ihrer herstellung
DE69812533D1 (de) Aluminiumnitridsubstrat und Verfahren zu dessen Herstellung
DE69601743T2 (de) Lenker und Verfahren zu dessen Herstellung
DE59600453D1 (de) Zinnbadbodenstein, und Verfahren zu seiner Herstellung
DE69617035T2 (de) Waschmittelzusammensetzungen und verfahren zu ihrer herstellung
DE59606076D1 (de) Bürste und Verfahren zu ihrer Herstellung
DE69522105T2 (de) Wischblatt und Verfahren zu dessen Herstellung
DE59610554D1 (de) Felge und Verfahren zu ihrer Herstellung
DE69612927T2 (de) Kupplung und Verfahren zu ihrer Herstellung
DE69616722D1 (de) Flachsicherung und Verfahren zu ihrer Herstellung
DE69801702D1 (de) Aluminium-Legierung und Verfahren zu ihrer Herstellung
DE69502772D1 (de) Baccatinderivate und Verfahren zu ihrer Herstellung
DE69620922T2 (de) Extrudierungs-Beschichtungsverfahren
DE69500356D1 (de) Optoelektrische Gegenstände und Verfahren zu ihrer Herstellung
DE69605591D1 (de) Lampenfassung und Verfahren zu ihrer Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition