DE69518684T2 - Herstellungsverfahren für ein Feldeffekt-Halbleiterbauelement - Google Patents
Herstellungsverfahren für ein Feldeffekt-HalbleiterbauelementInfo
- Publication number
- DE69518684T2 DE69518684T2 DE69518684T DE69518684T DE69518684T2 DE 69518684 T2 DE69518684 T2 DE 69518684T2 DE 69518684 T DE69518684 T DE 69518684T DE 69518684 T DE69518684 T DE 69518684T DE 69518684 T2 DE69518684 T2 DE 69518684T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- field effect
- effect semiconductor
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/126—Power FETs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6244794 | 1994-03-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69518684D1 DE69518684D1 (de) | 2000-10-12 |
DE69518684T2 true DE69518684T2 (de) | 2001-05-03 |
Family
ID=13200481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69518684T Expired - Lifetime DE69518684T2 (de) | 1994-03-31 | 1995-03-30 | Herstellungsverfahren für ein Feldeffekt-Halbleiterbauelement |
Country Status (4)
Country | Link |
---|---|
US (1) | US5470770A (de) |
EP (1) | EP0675530B1 (de) |
KR (1) | KR100246975B1 (de) |
DE (1) | DE69518684T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6015737A (en) * | 1991-07-26 | 2000-01-18 | Denso Corporation | Production method of a vertical type MOSFET |
US6603173B1 (en) | 1991-07-26 | 2003-08-05 | Denso Corporation | Vertical type MOSFET |
EP0675529A3 (de) * | 1994-03-30 | 1998-06-03 | Denso Corporation | Verfahren zur Herstellung von vertikalen MOS-Transistoren |
JP3412332B2 (ja) * | 1995-04-26 | 2003-06-03 | 株式会社デンソー | 半導体装置 |
JPH08306914A (ja) * | 1995-04-27 | 1996-11-22 | Nippondenso Co Ltd | 半導体装置およびその製造方法 |
JP3498431B2 (ja) * | 1995-07-04 | 2004-02-16 | 株式会社デンソー | 半導体装置の製造方法 |
JP3493903B2 (ja) * | 1995-09-29 | 2004-02-03 | 株式会社デンソー | 半導体装置 |
JP3528420B2 (ja) * | 1996-04-26 | 2004-05-17 | 株式会社デンソー | 半導体装置およびその製造方法 |
US5808340A (en) * | 1996-09-18 | 1998-09-15 | Advanced Micro Devices, Inc. | Short channel self aligned VMOS field effect transistor |
JP3521648B2 (ja) * | 1996-09-30 | 2004-04-19 | 株式会社デンソー | 半導体装置の製造方法 |
US6399462B1 (en) * | 1997-06-30 | 2002-06-04 | Cypress Semiconductor Corporation | Method and structure for isolating integrated circuit components and/or semiconductor active devices |
KR100341058B1 (ko) * | 1997-11-18 | 2002-08-22 | 주식회사 포스코 | 모니터의자기장차폐쉴드및그제작방법 |
US5998835A (en) * | 1998-02-17 | 1999-12-07 | International Business Machines Corporation | High performance MOSFET device with raised source and drain |
JP3237829B2 (ja) * | 1998-08-26 | 2001-12-10 | 日本電気株式会社 | クロック識別再生回路 |
JP3514178B2 (ja) | 1998-09-16 | 2004-03-31 | 株式会社デンソー | 半導体装置の製造方法 |
US6130133A (en) * | 1998-12-02 | 2000-10-10 | United Microelectronics Corp. | Fabricating method of high-voltage device |
KR100869845B1 (ko) * | 2006-12-04 | 2008-11-21 | 주식회사 하이닉스반도체 | 산화막 패턴의 형성 방법 및 이를 이용한 반도체 소자의패터닝 방법 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5696865A (en) * | 1979-12-30 | 1981-08-05 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS58147042A (ja) * | 1982-02-25 | 1983-09-01 | Nec Corp | 半導体装置の製造方法 |
JPS6028271A (ja) * | 1983-07-26 | 1985-02-13 | Nissan Motor Co Ltd | 縦型mosfet |
US4735824A (en) * | 1985-05-31 | 1988-04-05 | Kabushiki Kaisha Toshiba | Method of manufacturing an MOS capacitor |
JPS6212167A (ja) * | 1985-07-10 | 1987-01-21 | Tdk Corp | 溝部を有する縦形半導体装置の製造方法 |
JPS6246569A (ja) * | 1985-08-23 | 1987-02-28 | Tdk Corp | 縦形半導体装置及びその製造方法 |
JPS63250852A (ja) * | 1987-04-08 | 1988-10-18 | Sony Corp | 半導体装置 |
JPS63266882A (ja) * | 1987-04-24 | 1988-11-02 | Hitachi Ltd | 縦型絶縁ゲ−ト電界効果トランジスタ |
JPH0286136A (ja) * | 1988-09-22 | 1990-03-27 | Hitachi Ltd | 半導体素子およびその製造方法 |
JPH0294477A (ja) * | 1988-09-30 | 1990-04-05 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH02100370A (ja) * | 1988-10-07 | 1990-04-12 | Fuji Electric Co Ltd | 竪型mosfet装置の製造方法 |
US4965221A (en) * | 1989-03-15 | 1990-10-23 | Micron Technology, Inc. | Spacer isolation method for minimizing parasitic sidewall capacitance and creating fully recessed field oxide regions |
WO1993003502A1 (en) * | 1991-07-26 | 1993-02-18 | Nippondenso Co., Ltd. | Method of producing vertical mosfet |
US5316959A (en) * | 1992-08-12 | 1994-05-31 | Siliconix, Incorporated | Trenched DMOS transistor fabrication using six masks |
KR960005553B1 (ko) * | 1993-03-31 | 1996-04-26 | 현대전자산업주식회사 | 필드산화막 형성 방법 |
-
1995
- 1995-03-30 EP EP95104752A patent/EP0675530B1/de not_active Expired - Lifetime
- 1995-03-30 US US08/413,404 patent/US5470770A/en not_active Expired - Lifetime
- 1995-03-30 DE DE69518684T patent/DE69518684T2/de not_active Expired - Lifetime
- 1995-03-30 KR KR1019950007080A patent/KR100246975B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100246975B1 (ko) | 2000-03-15 |
US5470770A (en) | 1995-11-28 |
EP0675530B1 (de) | 2000-09-06 |
EP0675530A3 (de) | 1997-10-08 |
EP0675530A2 (de) | 1995-10-04 |
KR950034621A (ko) | 1995-12-28 |
DE69518684D1 (de) | 2000-10-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |