DE69327320T2 - Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung - Google Patents

Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung

Info

Publication number
DE69327320T2
DE69327320T2 DE69327320T DE69327320T DE69327320T2 DE 69327320 T2 DE69327320 T2 DE 69327320T2 DE 69327320 T DE69327320 T DE 69327320T DE 69327320 T DE69327320 T DE 69327320T DE 69327320 T2 DE69327320 T2 DE 69327320T2
Authority
DE
Germany
Prior art keywords
manufacture
protection
methods
power devices
bracket structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69327320T
Other languages
English (en)
Other versions
DE69327320D1 (de
Inventor
Raffaele Zambrano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Application granted granted Critical
Publication of DE69327320D1 publication Critical patent/DE69327320D1/de
Publication of DE69327320T2 publication Critical patent/DE69327320T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
    • H01L29/7818—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
    • H01L29/782—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a Schottky barrier diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69327320T 1993-09-30 1993-09-30 Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung Expired - Fee Related DE69327320T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93830397A EP0646964B1 (de) 1993-09-30 1993-09-30 Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung

Publications (2)

Publication Number Publication Date
DE69327320D1 DE69327320D1 (de) 2000-01-20
DE69327320T2 true DE69327320T2 (de) 2000-05-31

Family

ID=8215226

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69327320T Expired - Fee Related DE69327320T2 (de) 1993-09-30 1993-09-30 Integrierte aktive Klammerungsstruktur für den Schutz von Leistungsanordnungen gegen Überspannungen, und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (2) US5654225A (de)
EP (1) EP0646964B1 (de)
JP (1) JPH07169963A (de)
DE (1) DE69327320T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5708289A (en) * 1996-02-29 1998-01-13 Sgs-Thomson Microelectronics, Inc. Pad protection diode structure
TW329053B (en) * 1996-11-22 1998-04-01 United Microelectronics Corp The structure and manufacturing method for diode-type ROM
US6028342A (en) * 1996-11-22 2000-02-22 United Microelectronics Corp. ROM diode and a method of making the same
US6448587B1 (en) 1997-11-28 2002-09-10 Hitachi, Ltd. Circuit incorporated IGBT and power conversion device using the same
IT1296832B1 (it) * 1997-12-02 1999-08-02 Sgs Thomson Microelectronics Struttura integrata di protezione con dispositivi a soglia di conduzione inversa prestabilita di polarizzazione
US6138349A (en) 1997-12-18 2000-10-31 Vlt Corporation Protective coating for an electronic device
US6268242B1 (en) 1997-12-31 2001-07-31 Richard K. Williams Method of forming vertical mosfet device having voltage clamped gate and self-aligned contact
US6172383B1 (en) 1997-12-31 2001-01-09 Siliconix Incorporated Power MOSFET having voltage-clamped gate
US6225662B1 (en) 1998-07-28 2001-05-01 Philips Semiconductors, Inc. Semiconductor structure with heavily doped buried breakdown region
EP1022785B1 (de) * 1999-01-25 2006-04-05 STMicroelectronics S.r.l. Elektronische Halbleiterleistungsanordnung mit integrierter Diode
DE10004983C1 (de) * 2000-02-04 2001-09-13 Infineon Technologies Ag Schutzanordnung für Schottky-Diode
JP4607291B2 (ja) * 2000-06-29 2011-01-05 三菱電機株式会社 半導体装置
DE10238798B3 (de) * 2002-08-23 2004-03-18 Infineon Technologies Ag Hochfrequenzschalter
US6800906B2 (en) * 2002-10-18 2004-10-05 United Microelectronics Corp. Electrostatic discharge protection circuit
JP4250412B2 (ja) * 2002-12-13 2009-04-08 三菱電機株式会社 半導体装置
JP4913336B2 (ja) * 2004-09-28 2012-04-11 ルネサスエレクトロニクス株式会社 半導体装置
US7242564B2 (en) * 2004-10-20 2007-07-10 Toppoly Optoelectronics Corporation ESD protection circuit for charge pump and electronic device and system using the same
US7714381B2 (en) * 2005-04-01 2010-05-11 Semiconductor Components Industries, Llc Method of forming an integrated power device and structure
US8190623B2 (en) * 2008-06-05 2012-05-29 Enpulz, L.L.C. Image search engine using image analysis and categorization
CN116525609A (zh) * 2023-05-15 2023-08-01 上海晶岳电子有限公司 一种ldmos工艺tvs器件及其制造方法
CN116487382B (zh) * 2023-05-22 2024-05-17 上海晶岳电子有限公司 一种ldmos工艺tvs器件及其制造方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806773A (en) * 1971-07-17 1974-04-23 Sony Corp Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action
NL7501240A (nl) * 1974-02-11 1975-08-13 Rca Corp Bescherming van een geintegreerde keten tegen ge spanningen.
JPS523389A (en) * 1975-06-27 1977-01-11 Toshiba Corp Field effect semiconductor device
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
JPS57153463A (en) * 1981-02-27 1982-09-22 Westinghouse Electric Corp Overvoltage protecting device
JPS5944872A (ja) * 1982-09-07 1984-03-13 Toshiba Corp 半導体装置
JPS59117165A (ja) * 1982-12-23 1984-07-06 Nec Corp 半導体装置
US4896196A (en) * 1986-11-12 1990-01-23 Siliconix Incorporated Vertical DMOS power transistor with an integral operating condition sensor
US4893158A (en) * 1987-06-22 1990-01-09 Nissan Motor Co., Ltd. MOSFET device
JP2521783B2 (ja) * 1987-09-28 1996-08-07 三菱電機株式会社 半導体装置およびその製造方法
IT1232930B (it) * 1987-10-30 1992-03-10 Sgs Microelettronica Spa Struttura integrata a componenti attivi e passivi inclusi in sacche di isolamento operante a tensione maggiore della tensione di rottura tra ciascun componente e la sacca che lo contiene
JPH081956B2 (ja) * 1987-11-06 1996-01-10 日産自動車株式会社 保護機能を備えた縦型ｍｏｓｆｅｔ
FR2627028B1 (fr) * 1988-02-04 1990-07-20 Sgs Thomson Microelectronics Structure de protection des sorties d'un circuit integre de type mos
EP0345432A1 (de) * 1988-05-31 1989-12-13 Texas Instruments Incorporated Diode zum Schutz eines integrierten Schaltkreises vor elektrostatischen Entladungen (ESD)
US4922371A (en) * 1988-11-01 1990-05-01 Teledyne Semiconductor ESD protection circuit for MOS integrated circuits
JPH02185069A (ja) * 1988-12-02 1990-07-19 Motorola Inc 高エネルギー阻止能力及び温度補償された阻止電圧を具備する半導体デバイス
US5119162A (en) * 1989-02-10 1992-06-02 Texas Instruments Incorporated Integrated power DMOS circuit with protection diode
FR2649828B1 (fr) * 1989-07-17 1991-10-31 Sgs Thomson Microelectronics Circuit integre vdmos/logique comprenant un transistor vertical deplete et une diode zener
JPH0465878A (ja) * 1990-07-06 1992-03-02 Fuji Electric Co Ltd 半導体装置
GB9115699D0 (en) * 1991-07-19 1991-09-04 Philips Electronic Associated An overvoltage protected semiconductor switch
FR2689317B1 (fr) * 1992-03-26 1994-06-17 Sgs Thomson Microelectronics Circuit integre constituant un reseau de diodes de protection.
GB9215654D0 (en) * 1992-07-23 1992-09-09 Philips Electronics Uk Ltd A semiconductor component
EP0622849B1 (de) * 1993-04-28 1999-09-22 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Monolithisch integrierte Struktur einer elektronischen Vorrichtung mit einer bestimmten unidirektionalen Konduktionsschwellenspannung
DE69330556T2 (de) * 1993-05-13 2002-05-16 Cons Ric Microelettronica Integrierte Schaltungsstruktur für den Schutz von Leistungsvorrichtung gegen Überspannungen

Also Published As

Publication number Publication date
EP0646964B1 (de) 1999-12-15
EP0646964A1 (de) 1995-04-05
US5654225A (en) 1997-08-05
JPH07169963A (ja) 1995-07-04
US5777367A (en) 1998-07-07
DE69327320D1 (de) 2000-01-20

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee