DE69325320D1 - Magnetoresistive Schicht und Verfahren zu ihrer Herstellung - Google Patents
Magnetoresistive Schicht und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE69325320D1 DE69325320D1 DE69325320T DE69325320T DE69325320D1 DE 69325320 D1 DE69325320 D1 DE 69325320D1 DE 69325320 T DE69325320 T DE 69325320T DE 69325320 T DE69325320 T DE 69325320T DE 69325320 D1 DE69325320 D1 DE 69325320D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- magnetoresistive layer
- magnetoresistive
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/928—Magnetic property
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1121—Multilayer
- Y10T428/1129—Super lattice [e.g., giant magneto resistance [GMR] or colossal magneto resistance [CMR], etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12632—Four or more distinct components with alternate recurrence of each type component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22458992 | 1992-07-31 | ||
JP35057292 | 1992-12-04 | ||
JP5041505A JPH06220609A (ja) | 1992-07-31 | 1993-03-02 | 磁気抵抗効果膜及びその製造方法並びにそれを用いた磁気抵抗効果素子、磁気抵抗効果型磁気ヘッド |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69325320D1 true DE69325320D1 (de) | 1999-07-22 |
DE69325320T2 DE69325320T2 (de) | 1999-12-30 |
Family
ID=27290838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69325320T Expired - Fee Related DE69325320T2 (de) | 1992-07-31 | 1993-07-29 | Magnetoresistive Schicht und Verfahren zu ihrer Herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5447781A (de) |
EP (1) | EP0581295B1 (de) |
JP (1) | JPH06220609A (de) |
DE (1) | DE69325320T2 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5549978A (en) * | 1992-10-30 | 1996-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US5657190A (en) * | 1993-03-02 | 1997-08-12 | Tdk Corporation | Apparatus for detecting a magnetic field using a giant magnetoresistance effect multilayer |
JPH07192919A (ja) * | 1993-12-27 | 1995-07-28 | Sony Corp | 人工格子膜およびこれを用いた磁気抵抗効果素子 |
JP2970455B2 (ja) * | 1994-03-14 | 1999-11-02 | 株式会社デンソー | 磁気抵抗素子の製造方法およびその磁場処理装置 |
EP0685746A3 (de) * | 1994-05-30 | 1996-12-04 | Sony Corp | Maqnetowiderstandeffektanordnung mit verbessertem thermischem Widerstand. |
JPH0845034A (ja) * | 1994-07-29 | 1996-02-16 | Sony Corp | 磁気抵抗型磁気ヘッド及び記録・再生用複合型磁気ヘッド、並びにこれらの製造方法 |
JP3952515B2 (ja) * | 1994-09-09 | 2007-08-01 | 富士通株式会社 | 磁気抵抗効果素子、磁気記録装置及び磁気抵抗効果素子の製造方法 |
US5818323A (en) * | 1994-09-09 | 1998-10-06 | Sanyo Electric Co., Ltd. | Magnetoresistive device |
US5585986A (en) * | 1995-05-15 | 1996-12-17 | International Business Machines Corporation | Digital magnetoresistive sensor based on the giant magnetoresistance effect |
US5623235A (en) * | 1995-09-22 | 1997-04-22 | Hughes Aircraft Company | Wide-bandwidth variable attenuator/modulator using giant magnetoristance technology |
US5747997A (en) * | 1996-06-05 | 1998-05-05 | Regents Of The University Of Minnesota | Spin-valve magnetoresistance sensor having minimal hysteresis problems |
US6166539A (en) * | 1996-10-30 | 2000-12-26 | Regents Of The University Of Minnesota | Magnetoresistance sensor having minimal hysteresis problems |
JPH1049834A (ja) * | 1996-08-07 | 1998-02-20 | Sony Corp | 多層磁気抵抗効果膜、磁気抵抗効果素子及び磁気抵抗効果型磁気ヘッド |
US5945904A (en) * | 1996-09-06 | 1999-08-31 | Ford Motor Company | Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers |
US5731936A (en) * | 1996-09-26 | 1998-03-24 | International Business Machines Corporation | Magnetoresistive (MR) sensor with coefficient enhancing that promotes thermal stability |
US5976681A (en) * | 1997-06-30 | 1999-11-02 | Ford Global Technologies, Inc. | Giant magnetoresistors with high sensitivity and reduced hysteresis |
US6645647B1 (en) | 2000-01-12 | 2003-11-11 | Seagate Technology Llc | Magnetic recording media including magnetically soft composite layer and method of making same |
US6660357B1 (en) | 2000-02-04 | 2003-12-09 | Seagate Technology Llc | Perpendicular magnetic recording media with laminated soft magnetic underlayer |
US7087325B2 (en) * | 2000-02-23 | 2006-08-08 | Showa Denko Kabushiki Kaisha | Magnetic recording medium and production process thereof |
US6639763B1 (en) * | 2000-03-15 | 2003-10-28 | Tdk Corporation | Magnetic transducer and thin film magnetic head |
US6456467B1 (en) | 2000-03-31 | 2002-09-24 | Seagate Technology Llc | Laminated shields with antiparallel magnetizations |
US6902826B1 (en) | 2000-08-18 | 2005-06-07 | International Business Machines Corporation | High moment films with sub-monolayer nanolaminations retaining magnetic anisotropy after hard axis annealing |
US6818330B2 (en) | 2000-08-25 | 2004-11-16 | Seagate Technology Llc | Perpendicular recording medium with antiferromagnetic exchange coupling in soft magnetic underlayers |
JP2002090978A (ja) | 2000-09-12 | 2002-03-27 | Hoya Corp | 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置 |
US6777113B2 (en) | 2001-08-14 | 2004-08-17 | Seagate Technology Llc | Multilayer films for optimized soft underlayer magnetic properties of dual layer perpendicular recording media |
US7153399B2 (en) * | 2001-08-24 | 2006-12-26 | Nanonexus, Inc. | Method and apparatus for producing uniform isotropic stresses in a sputtered film |
CN100343670C (zh) * | 2001-12-21 | 2007-10-17 | 皇家飞利浦电子股份有限公司 | 用于测量微阵列上磁性纳米粒子面密度的传感器和方法 |
US6818961B1 (en) * | 2003-06-30 | 2004-11-16 | Freescale Semiconductor, Inc. | Oblique deposition to induce magnetic anisotropy for MRAM cells |
US20050013060A1 (en) * | 2003-07-14 | 2005-01-20 | International Business Machines Corporation | Magnetoresistive sensor |
JP4617101B2 (ja) * | 2004-05-11 | 2011-01-19 | 株式会社昭和真空 | スパッタ装置 |
JP4566681B2 (ja) * | 2004-10-06 | 2010-10-20 | 株式会社昭和真空 | スパッタ装置 |
US20070242395A1 (en) * | 2004-10-15 | 2007-10-18 | Bailey William E | Methods of manipulating the relaxation rate in magnetic materials and devices for using the same |
GB2474167B (en) * | 2008-06-20 | 2015-07-29 | Canon Anelva Corp | Method for manufacturing magnetoresistive element |
US8755154B2 (en) * | 2011-09-13 | 2014-06-17 | Seagate Technology Llc | Tuned angled uniaxial anisotropy in trilayer magnetic sensors |
US9036308B2 (en) | 2011-09-21 | 2015-05-19 | Seagate Technology Llc | Varyinig morphology in magnetic sensor sub-layers |
JP5901571B2 (ja) * | 2013-05-21 | 2016-04-13 | 学校法人東海大学 | 成膜方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2533860B2 (ja) * | 1986-09-24 | 1996-09-11 | 株式会社日立製作所 | 磁性超格子膜およびそれを用いた磁気ヘツド |
DE3820475C1 (de) * | 1988-06-16 | 1989-12-21 | Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De | |
JPH0223681A (ja) * | 1988-07-12 | 1990-01-25 | Nec Corp | 磁気抵抗効果素子 |
FR2648942B1 (fr) * | 1989-06-27 | 1995-08-11 | Thomson Csf | Capteur a effet magnetoresistif |
EP0429022B1 (de) * | 1989-11-17 | 1994-10-26 | Hitachi Metals, Ltd. | Magnetlegierung mit ultrakleinen Kristallkörnern und Herstellungsverfahren |
DE4027226A1 (de) * | 1990-02-13 | 1991-08-14 | Forschungszentrum Juelich Gmbh | Magnetfeldsensor mit ferromagnetischer, duenner schicht |
US5157570A (en) * | 1990-06-29 | 1992-10-20 | Digital Equipment Corporation | Magnetic pole configuration for high density thin film recording head |
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
JP2690623B2 (ja) * | 1991-02-04 | 1997-12-10 | 松下電器産業株式会社 | 磁気抵抗効果素子 |
MY108176A (en) * | 1991-02-08 | 1996-08-30 | Hitachi Global Storage Tech Netherlands B V | Magnetoresistive sensor based on oscillations in the magnetoresistance |
US5159513A (en) * | 1991-02-08 | 1992-10-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5277991A (en) * | 1991-03-08 | 1994-01-11 | Matsushita Electric Industrial Co., Ltd. | Magnetoresistive materials |
FR2677811A1 (fr) * | 1991-06-11 | 1992-12-18 | Philips Electronique Lab | Dispositif incluant un super-reseau de couches ayant des proprietes de magnetoresistance geante realisees sur un substrat semiconducteur. |
JPH05183212A (ja) * | 1991-07-30 | 1993-07-23 | Toshiba Corp | 磁気抵抗効果素子 |
JP3088519B2 (ja) * | 1991-10-23 | 2000-09-18 | 財団法人生産開発科学研究所 | 磁気抵抗効果素子 |
-
1993
- 1993-03-02 JP JP5041505A patent/JPH06220609A/ja not_active Withdrawn
- 1993-07-23 US US08/095,432 patent/US5447781A/en not_active Expired - Fee Related
- 1993-07-29 EP EP93112204A patent/EP0581295B1/de not_active Expired - Lifetime
- 1993-07-29 DE DE69325320T patent/DE69325320T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH06220609A (ja) | 1994-08-09 |
DE69325320T2 (de) | 1999-12-30 |
EP0581295A1 (de) | 1994-02-02 |
EP0581295B1 (de) | 1999-06-16 |
US5447781A (en) | 1995-09-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |