JP4617101B2 - スパッタ装置 - Google Patents
スパッタ装置 Download PDFInfo
- Publication number
- JP4617101B2 JP4617101B2 JP2004140708A JP2004140708A JP4617101B2 JP 4617101 B2 JP4617101 B2 JP 4617101B2 JP 2004140708 A JP2004140708 A JP 2004140708A JP 2004140708 A JP2004140708 A JP 2004140708A JP 4617101 B2 JP4617101 B2 JP 4617101B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cathode
- moving
- target
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 71
- 239000002245 particle Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
2,2A 真空容器
3 真空空間
4 基板
5 基板保持台
6 回転軸
7 ギア
8 電動モータ
10,10A,10B スパッタカソード装置
11,11A,11B カソード部
12,12A,12B マグネット
13,13A,13B ターゲット
14,14A,14B 蛇腹部
15,15A,15B 移動ロッド
16,16A,16B ネジ部
17,17A,17B 駆動ギア
18,18A,18B ギア
19,19A,19B 電動モータ
20,20A,20B 開口部
30,30A,30B 移動装置
Claims (2)
- 真空空間を画成する真空容器と、該真空容器内に基板を保持する基板保持台と、該基板保持台に保持された基板に対峙する位置に設けられたカソードと、該カソードに設置されるターゲットとを少なくとも具備するスパッタ装置において、
前記ターゲットが設置されたカソードを前記基板に対して所定の角度で配すると共に、前記基板に対して平行に移動させるカソード移動手段と、
前記カソード移動手段を制御し、前記カソードの移動速度及び移動方向を変更するカソード移動制御手段と、
前記基板保持台を所定の速度で回転させる駆動手段と、を具備し、
前記ターゲットからスパッタ粒子を飛散させると共に、前記カソード移動制御手段によって前記カソード移動手段を制御し、前記カソードを前記基板に対して所定の速度で前後に移動させ、かつ、前記駆動手段によって前記基板保持台を所定の速度で回転させ、前記基板に薄膜を形成することを特徴するスパッタ装置。 - 前記カソードは、前記基板保持台の周方向に所定の間隔で複数配置されることを特徴とする請求項1記載のスパッタ装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004140708A JP4617101B2 (ja) | 2004-05-11 | 2004-05-11 | スパッタ装置 |
US11/125,157 US20050252767A1 (en) | 2004-05-11 | 2005-05-10 | Sputtering device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004140708A JP4617101B2 (ja) | 2004-05-11 | 2004-05-11 | スパッタ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005320601A JP2005320601A (ja) | 2005-11-17 |
JP4617101B2 true JP4617101B2 (ja) | 2011-01-19 |
Family
ID=35308362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004140708A Expired - Lifetime JP4617101B2 (ja) | 2004-05-11 | 2004-05-11 | スパッタ装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20050252767A1 (ja) |
JP (1) | JP4617101B2 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006077837A1 (ja) * | 2005-01-19 | 2006-07-27 | Ulvac, Inc. | スパッタ装置および成膜方法 |
US9771647B1 (en) * | 2008-12-08 | 2017-09-26 | Michael A. Scobey | Cathode assemblies and sputtering systems |
KR101084232B1 (ko) * | 2009-12-15 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터 제조 장치 |
JP7018702B2 (ja) * | 2016-08-02 | 2022-02-14 | 神港精機株式会社 | 成膜装置及び成膜方法 |
CN107620050A (zh) * | 2017-11-02 | 2018-01-23 | 安徽普威达真空科技有限公司 | 用于杆状金属零件表面的真空镀膜装置及镀膜方法 |
JP7329913B2 (ja) * | 2018-10-16 | 2023-08-21 | Jswアフティ株式会社 | プラズマ成膜方法 |
CN111647867A (zh) * | 2020-07-02 | 2020-09-11 | 杭州企势科技有限公司 | 一种真空镀膜机磁控溅射控制机构 |
US11479847B2 (en) | 2020-10-14 | 2022-10-25 | Alluxa, Inc. | Sputtering system with a plurality of cathode assemblies |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56167030U (ja) * | 1980-05-10 | 1981-12-10 | ||
JPS63465A (ja) * | 1986-06-18 | 1988-01-05 | Matsushita Electric Ind Co Ltd | スパツタ薄膜形成装置 |
JPH01319671A (ja) * | 1988-06-21 | 1989-12-25 | Toshiba Corp | 多元スパッタリング装置 |
JPH06220609A (ja) * | 1992-07-31 | 1994-08-09 | Sony Corp | 磁気抵抗効果膜及びその製造方法並びにそれを用いた磁気抵抗効果素子、磁気抵抗効果型磁気ヘッド |
JPH11189873A (ja) * | 1997-12-26 | 1999-07-13 | Matsushita Electric Ind Co Ltd | スパッタリング装置及び方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6736943B1 (en) * | 2001-03-15 | 2004-05-18 | Cierra Photonics, Inc. | Apparatus and method for vacuum coating deposition |
-
2004
- 2004-05-11 JP JP2004140708A patent/JP4617101B2/ja not_active Expired - Lifetime
-
2005
- 2005-05-10 US US11/125,157 patent/US20050252767A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56167030U (ja) * | 1980-05-10 | 1981-12-10 | ||
JPS63465A (ja) * | 1986-06-18 | 1988-01-05 | Matsushita Electric Ind Co Ltd | スパツタ薄膜形成装置 |
JPH01319671A (ja) * | 1988-06-21 | 1989-12-25 | Toshiba Corp | 多元スパッタリング装置 |
JPH06220609A (ja) * | 1992-07-31 | 1994-08-09 | Sony Corp | 磁気抵抗効果膜及びその製造方法並びにそれを用いた磁気抵抗効果素子、磁気抵抗効果型磁気ヘッド |
JPH11189873A (ja) * | 1997-12-26 | 1999-07-13 | Matsushita Electric Ind Co Ltd | スパッタリング装置及び方法 |
Also Published As
Publication number | Publication date |
---|---|
US20050252767A1 (en) | 2005-11-17 |
JP2005320601A (ja) | 2005-11-17 |
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