DE69229332D1 - Positiv-arbeitende Resistzusammensetzung - Google Patents

Positiv-arbeitende Resistzusammensetzung

Info

Publication number
DE69229332D1
DE69229332D1 DE69229332T DE69229332T DE69229332D1 DE 69229332 D1 DE69229332 D1 DE 69229332D1 DE 69229332 T DE69229332 T DE 69229332T DE 69229332 T DE69229332 T DE 69229332T DE 69229332 D1 DE69229332 D1 DE 69229332D1
Authority
DE
Germany
Prior art keywords
resist composition
positive working
working resist
positive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69229332T
Other languages
English (en)
Other versions
DE69229332T2 (de
Inventor
Kazuhiko Hashimoto
Haruyoshi Osaki
Chinehito Ebina
Kyoko Nagase
Hiroshi Moriuma
Yasunori Uetani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Application granted granted Critical
Publication of DE69229332D1 publication Critical patent/DE69229332D1/de
Publication of DE69229332T2 publication Critical patent/DE69229332T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/22Exposing sequentially with the same light pattern different positions of the same surface
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G8/00Condensation polymers of aldehydes or ketones with phenols only
    • C08G8/04Condensation polymers of aldehydes or ketones with phenols only of aldehydes
    • C08G8/08Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
    • C08G8/24Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with mixtures of two or more phenols which are not covered by only one of the groups C08G8/10 - C08G8/20

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69229332T 1991-12-27 1992-12-23 Positiv-arbeitende Resistzusammensetzung Expired - Fee Related DE69229332T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34669391A JP3182823B2 (ja) 1991-12-27 1991-12-27 ポジ型レジスト組成物

Publications (2)

Publication Number Publication Date
DE69229332D1 true DE69229332D1 (de) 1999-07-08
DE69229332T2 DE69229332T2 (de) 2000-03-02

Family

ID=18385180

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69229332T Expired - Fee Related DE69229332T2 (de) 1991-12-27 1992-12-23 Positiv-arbeitende Resistzusammensetzung

Country Status (8)

Country Link
US (1) US5468590A (de)
EP (1) EP0550009B1 (de)
JP (1) JP3182823B2 (de)
KR (1) KR100247843B1 (de)
CA (1) CA2085962A1 (de)
DE (1) DE69229332T2 (de)
MX (1) MX9207572A (de)
TW (1) TW263568B (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3319092B2 (ja) * 1993-11-08 2002-08-26 住友化学工業株式会社 ポジ型レジスト組成物
EP0660186A1 (de) * 1993-12-20 1995-06-28 Mitsubishi Chemical Corporation Lichtempfindliche Harzzusammensetzung und Verfahren zur Bildherstellung damit
JP3424341B2 (ja) * 1994-04-11 2003-07-07 住友化学工業株式会社 感光性樹脂組成物
JP3230925B2 (ja) * 1994-04-12 2001-11-19 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
TW332264B (en) * 1994-09-07 1998-05-21 Mitsubishi Chem Corp Photosensitive resin composition and method for forming a photoresist pattern
DE69519781T2 (de) * 1994-10-05 2001-06-07 Japan Synthetic Rubber Co Ltd Strahlungsempfindliche Harzzusammensetzung
JP3427562B2 (ja) * 1995-05-09 2003-07-22 住友化学工業株式会社 ポジ型レジスト組成物
US5709977A (en) * 1995-07-13 1998-01-20 Fuji Photo Film Co., Ltd. Positive working photoresist composition
JP3076523B2 (ja) * 1996-03-25 2000-08-14 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP3057010B2 (ja) * 1996-08-29 2000-06-26 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターンの形成方法
US6040107A (en) * 1998-02-06 2000-03-21 Olin Microelectronic Chemicals, Inc. Photosensitive diazonaphthoquinone esters based on selected cyclic alkyl ether-containing phenolics and their use in radiation sensitive mixtures
JP2002189294A (ja) * 2000-12-21 2002-07-05 Mitsubishi Chemicals Corp ポジ型画像形成材料
CA2444785C (en) * 2003-10-28 2005-02-15 Centennial 2000 Inc. Prime rib meat product and process of manufacture
KR101737798B1 (ko) * 2010-03-24 2017-05-30 삼성디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 패턴의 형성 방법
US8822123B2 (en) 2012-07-13 2014-09-02 Momentive Specialty Chemicals Inc. Polymeric materials and methods for making the polymeric materials
KR102287568B1 (ko) * 2014-03-20 2021-08-10 디아이씨 가부시끼가이샤 노볼락형 페놀성 수산기 함유 수지, 그 제조 방법, 경화성 조성물, 레지스트용 조성물 및 컬러 레지스트
WO2016084495A1 (ja) * 2014-11-25 2016-06-02 Dic株式会社 ノボラック型フェノール樹脂、その製造方法、感光性組成物、レジスト材料、及び塗膜
TWI668252B (zh) * 2014-12-02 2019-08-11 日商迪愛生股份有限公司 Resist agent underlayer film forming composition and resist underlayer film
KR102559230B1 (ko) * 2015-05-20 2023-07-25 디아이씨 가부시끼가이샤 노볼락형 페놀성 수산기 함유 수지 및 레지스트막
CN108139674B (zh) * 2015-10-19 2021-09-28 日产化学工业株式会社 含有含长链烷基的酚醛清漆的抗蚀剂下层膜形成用组合物
WO2020153048A1 (ja) * 2019-01-21 2020-07-30 Dic株式会社 フェノール性水酸基含有樹脂、感光性組成物、レジスト膜、硬化性組成物及び硬化物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61141441A (ja) * 1984-12-14 1986-06-28 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物
US4920028A (en) * 1988-03-31 1990-04-24 Morton Thiokol, Inc. High contrast high thermal stability positive photoresists with mixed cresol and hydroxybenzaldehyde prepared novolak and photosensitive diazoquinone
US5177172A (en) * 1988-05-31 1993-01-05 Ocg Microelectronic Materials, Inc. Selected methylol-substituted trihydroxybenzophenones and their use in phenolic resin compositions
JPH063544B2 (ja) * 1988-07-07 1994-01-12 住友化学工業株式会社 ポジ型感放射線性レジスト組成物
CA2023791A1 (en) * 1989-08-24 1991-02-25 Ayako Ida Radiation-sensitive positive resist composition
JP3063148B2 (ja) * 1989-12-27 2000-07-12 住友化学工業株式会社 ポジ型レジスト組成物

Also Published As

Publication number Publication date
CA2085962A1 (en) 1993-06-28
MX9207572A (es) 1993-06-30
DE69229332T2 (de) 2000-03-02
KR100247843B1 (ko) 2000-06-01
KR930013869A (ko) 1993-07-22
US5468590A (en) 1995-11-21
JP3182823B2 (ja) 2001-07-03
EP0550009B1 (de) 1999-06-02
TW263568B (de) 1995-11-21
JPH05181270A (ja) 1993-07-23
EP0550009A1 (de) 1993-07-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee