DE69225366D1 - Nichtflüchtige Speicherschaltung - Google Patents
Nichtflüchtige SpeicherschaltungInfo
- Publication number
- DE69225366D1 DE69225366D1 DE69225366T DE69225366T DE69225366D1 DE 69225366 D1 DE69225366 D1 DE 69225366D1 DE 69225366 T DE69225366 T DE 69225366T DE 69225366 T DE69225366 T DE 69225366T DE 69225366 D1 DE69225366 D1 DE 69225366D1
- Authority
- DE
- Germany
- Prior art keywords
- volatile memory
- memory circuit
- circuit
- volatile
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21993291A JP2637314B2 (ja) | 1991-08-30 | 1991-08-30 | 不揮発性メモリ回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69225366D1 true DE69225366D1 (de) | 1998-06-10 |
DE69225366T2 DE69225366T2 (de) | 1998-10-01 |
Family
ID=16743283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69225366T Expired - Lifetime DE69225366T2 (de) | 1991-08-30 | 1992-08-28 | Nichtflüchtige Speicherschaltung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5270978A (de) |
EP (1) | EP0530713B1 (de) |
JP (1) | JP2637314B2 (de) |
KR (1) | KR960002007B1 (de) |
DE (1) | DE69225366T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001167591A (ja) * | 1999-12-08 | 2001-06-22 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
US5640114A (en) * | 1995-12-27 | 1997-06-17 | Vlsi Technology, Inc. | Versatile select and hold scan flip-flop |
US5703809A (en) * | 1996-10-01 | 1997-12-30 | Microchip Technology Incorporated | Overcharge/discharge voltage regulator for EPROM memory array |
JPH11213684A (ja) * | 1998-01-28 | 1999-08-06 | Toshiba Corp | 不揮発性半導体メモリ |
JP3401522B2 (ja) * | 1998-07-06 | 2003-04-28 | 日本電気株式会社 | ヒューズ回路及び冗長デコーダ回路 |
KR100527593B1 (ko) * | 1998-07-21 | 2006-02-13 | 주식회사 하이닉스반도체 | 비트라인 프리차지 전압(vblp) 및 셀 플레이트전압(vcp) 제어 장치 |
JP2004158111A (ja) * | 2002-11-06 | 2004-06-03 | Toshiba Corp | メモリ回路 |
US6909639B2 (en) * | 2003-04-22 | 2005-06-21 | Nexflash Technologies, Inc. | Nonvolatile memory having bit line discharge, and method of operation thereof |
US7050354B2 (en) * | 2003-12-16 | 2006-05-23 | Freescale Semiconductor, Inc. | Low-power compiler-programmable memory with fast access timing |
DE102015004824A1 (de) * | 2015-04-14 | 2016-10-20 | Infineon Technologies Ag | Verfahren und Vorrichtung zum Steuern von Strom in einer Array-Zelle |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4571708A (en) * | 1984-12-26 | 1986-02-18 | Mostek Corporation | CMOS ROM Data select circuit |
US4638459A (en) * | 1985-01-31 | 1987-01-20 | Standard Microsystems Corp. | Virtual ground read only memory |
JPS61181000A (ja) * | 1985-02-06 | 1986-08-13 | Matsushita Electric Ind Co Ltd | ダイナミツクrom回路 |
FR2610134B1 (fr) * | 1987-01-27 | 1989-03-31 | Thomson Semiconducteurs | Circuit de lecture pour memoire |
JPH0682520B2 (ja) * | 1987-07-31 | 1994-10-19 | 株式会社東芝 | 半導体メモリ |
JPH07105152B2 (ja) * | 1988-03-09 | 1995-11-13 | 株式会社東芝 | 不揮発性メモリ回路装置 |
KR930000963B1 (ko) * | 1988-03-09 | 1993-02-11 | 가부시기가이샤 도오시바 | 불휘발성 메모리 회로장치 |
JPH0770235B2 (ja) * | 1988-06-24 | 1995-07-31 | 株式会社東芝 | 不揮発性メモリ回路装置 |
JP2573335B2 (ja) * | 1988-11-09 | 1997-01-22 | 株式会社東芝 | 不揮発性メモリ |
JP2573380B2 (ja) * | 1989-12-22 | 1997-01-22 | 株式会社東芝 | 不揮発性半導体メモリ |
-
1991
- 1991-08-30 JP JP21993291A patent/JP2637314B2/ja not_active Expired - Fee Related
-
1992
- 1992-08-25 KR KR1019920015246A patent/KR960002007B1/ko not_active IP Right Cessation
- 1992-08-28 EP EP92114763A patent/EP0530713B1/de not_active Expired - Lifetime
- 1992-08-28 US US07/936,787 patent/US5270978A/en not_active Expired - Lifetime
- 1992-08-28 DE DE69225366T patent/DE69225366T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR960002007B1 (ko) | 1996-02-09 |
DE69225366T2 (de) | 1998-10-01 |
KR930005033A (ko) | 1993-03-23 |
EP0530713B1 (de) | 1998-05-06 |
EP0530713A3 (de) | 1994-02-02 |
US5270978A (en) | 1993-12-14 |
EP0530713A2 (de) | 1993-03-10 |
JP2637314B2 (ja) | 1997-08-06 |
JPH05109290A (ja) | 1993-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R071 | Expiry of right |
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