DE69230750D1 - Nichtflüchtige Halbleiterspeicheranordnung - Google Patents

Nichtflüchtige Halbleiterspeicheranordnung

Info

Publication number: DE69230750D1
Authority: DE; Germany
Prior art keywords: memory device; semiconductor memory; volatile semiconductor; volatile; semiconductor
Prior art date: 1991-12-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69230750T

Other languages

English (en)

Other versions

DE69230750T2 (de

Inventor

Kiyokazu Hashimoto

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Electronics Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1991-12-27

Filing date

1992-12-21

Publication date

2000-04-13

1992-12-21 Application filed by NEC Corp filed Critical NEC Corp

2000-04-13 Publication of DE69230750D1 publication Critical patent/DE69230750D1/de

2000-10-05 Application granted granted Critical

2000-10-05 Publication of DE69230750T2 publication Critical patent/DE69230750T2/de

2012-12-22 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C29/50004—Marginal testing, e.g. race, voltage or current testing of threshold voltage
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2201/00—Indexing scheme relating to error detection, to error correction, and to monitoring
- G06F2201/81—Threshold
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

DE69230750T 1991-12-27 1992-12-21 Nichtflüchtige Halbleiterspeicheranordnung Expired - Fee Related DE69230750T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP03359813A JP3080743B2 (ja)	1991-12-27	1991-12-27	不揮発性半導体記憶装置

Publications (2)

Publication Number	Publication Date
DE69230750D1 true DE69230750D1 (de)	2000-04-13
DE69230750T2 DE69230750T2 (de)	2000-10-05

Family

ID=18466426

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69230750T Expired - Fee Related DE69230750T2 (de)	1991-12-27	1992-12-21	Nichtflüchtige Halbleiterspeicheranordnung

Country Status (5)

Country	Link
US (1)	US5513193A (de)
EP (1)	EP0548866B1 (de)
JP (1)	JP3080743B2 (de)
KR (1)	KR960002736B1 (de)
DE (1)	DE69230750T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0748521B1 (de) *	1994-03-03	2001-11-07	Rohm Corporation	Überlöschungsdetektion in einer niederspannungs-eintransistor-flash-eeprom-zelle unter verwendung von fowler-nordheim-programmierung und -löschung
FR2718559B1 (fr) *	1994-04-08	1996-06-07	Sgs Thomson Microelectronics	Mémoire non volatile modifiable électriquement incorporant des fonctions de test.
DE69426818T2 (de) *	1994-06-10	2001-10-18	Stmicroelectronics S.R.L., Agrate Brianza	Fehlertolerantes Speichergerät, insbesondere des Typs "flash EEPROM"
JP2780674B2 (ja) *	1995-06-20	1998-07-30	日本電気株式会社	不揮発性半導体記憶装置
JPH0935500A (ja) *	1995-07-21	1997-02-07	Toshiba Corp	不揮発性半導体記憶装置のスクリーニング方法
US5610867A (en) *	1995-09-28	1997-03-11	International Business Machines Corporation	DRAM signal margin test method
KR0161867B1 (ko) *	1995-10-11	1998-12-01	문정환	반도체 소자의 가변 문턱전압 조절회로
KR100223868B1 (ko) *	1996-07-12	1999-10-15	구본준	비휘발성 메모리를 프로그램하는 방법
US6268623B1 (en) *	1997-03-20	2001-07-31	Altera Corporation	Apparatus and method for margin testing single polysilicon EEPROM cells
US6781883B1 (en)	1997-03-20	2004-08-24	Altera Corporation	Apparatus and method for margin testing single polysilicon EEPROM cells
US6146943A (en) *	1997-07-09	2000-11-14	Hyundai Electronics Industries Co., Ltd.	Method for fabricating nonvolatile memory device
US5912836A (en) *	1997-12-01	1999-06-15	Amic Technology, Inc.	Circuit for detecting both charge gain and charge loss properties in a non-volatile memory array
US5991196A (en) *	1997-12-16	1999-11-23	Microchip Technology Incorporated	Reprogrammable memory device with variable page size
JP3344313B2 (ja) *	1998-03-25	2002-11-11	日本電気株式会社	不揮発性半導体メモリ装置
US6914827B2 (en) *	1999-07-28	2005-07-05	Samsung Electronics Co., Ltd.	Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof
KR100308192B1 (ko)	1999-07-28	2001-11-01	윤종용	플래시 메모리 셀들의 과소거를 방지할 수 있는 플래시 메모리장치 및 그것의 소거 방법
US7366020B2 (en) *	1999-07-28	2008-04-29	Samsung Electronics Co., Ltd.	Flash memory device capable of preventing an overerase of flash memory cells and erase method thereof
KR100357693B1 (ko)	1999-12-06	2002-10-25	삼성전자 주식회사	향상된 소거 알고리즘이 내장된 불휘발성 반도체 메모리장치
KR20020091581A (ko)	2001-05-31	2002-12-06	삼성전자 주식회사	진행성 결함 특성을 갖는 메모리 셀을 검사할 수 있는플래시 메모리 장치
US7894269B2 (en) *	2006-07-20	2011-02-22	Sandisk Corporation	Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells
US7885119B2 (en) *	2006-07-20	2011-02-08	Sandisk Corporation	Compensating for coupling during programming
US7660166B2 (en) *	2007-01-31	2010-02-09	Sandisk Il Ltd.	Method of improving programming precision in flash memory
US7652929B2 (en) *	2007-09-17	2010-01-26	Sandisk Corporation	Non-volatile memory and method for biasing adjacent word line for verify during programming

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS57176587A (en) *	1981-04-24	1982-10-29	Hitachi Ltd	Semiconductor ram device
US4460982A (en) *	1982-05-20	1984-07-17	Intel Corporation	Intelligent electrically programmable and electrically erasable ROM
JPS6258500A (ja) *	1985-09-09	1987-03-14	Fujitsu Ltd	半導体記憶装置の試験方法
JPS62114200A (ja) *	1985-11-13	1987-05-25	Mitsubishi Electric Corp	半導体メモリ装置
JPS6323297A (ja) *	1987-05-15	1988-01-30	Nec Corp	信号線駆動回路
JPS6476596A (en) *	1987-09-18	1989-03-22	Oki Electric Ind Co Ltd	Error of eeprom detecting device
US4809231A (en) *	1987-11-12	1989-02-28	Motorola, Inc.	Method and apparatus for post-packaging testing of one-time programmable memories
US5053990A (en) *	1988-02-17	1991-10-01	Intel Corporation	Program/erase selection for flash memory
US4841482A (en) *	1988-02-17	1989-06-20	Intel Corporation	Leakage verification for flash EPROM
US5268870A (en) *	1988-06-08	1993-12-07	Eliyahou Harari	Flash EEPROM system and intelligent programming and erasing methods therefor
US5142495A (en) *	1989-03-10	1992-08-25	Intel Corporation	Variable load for margin mode
KR910005316A (ko) *	1989-08-18	1991-03-30	미다 가쓰시게	반도체 불휘발성 메모리장치
US5220533A (en) *	1991-11-06	1993-06-15	Altera Corporation	Method and apparatus for preventing overerasure in a flash cell

1991
- 1991-12-27 JP JP03359813A patent/JP3080743B2/ja not_active Expired - Lifetime
1992
- 1992-12-21 EP EP92121678A patent/EP0548866B1/de not_active Expired - Lifetime
- 1992-12-21 DE DE69230750T patent/DE69230750T2/de not_active Expired - Fee Related
- 1992-12-26 KR KR1019920025603A patent/KR960002736B1/ko not_active IP Right Cessation
1995
- 1995-06-06 US US08/467,349 patent/US5513193A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0548866B1 (de)	2000-03-08
US5513193A (en)	1996-04-30
EP0548866A2 (de)	1993-06-30
JPH05182499A (ja)	1993-07-23
EP0548866A3 (de)	1994-02-09
JP3080743B2 (ja)	2000-08-28
KR930014611A (ko)	1993-07-23
KR960002736B1 (ko)	1996-02-26
DE69230750T2 (de)	2000-10-05

Legal Events

Date	Code	Title	Description
2001-03-29	8364	No opposition during term of opposition
2003-06-12	8327	Change in the person/name/address of the patent owner	Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP
2010-10-21	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE69326370D1 (de)	1999-10-21	Nichtflüchtige Halbleiterspeicheranordnung
DE69227723D1 (de)	1999-01-14	Halbleiterspeicheranordnung
DE69224315D1 (de)	1998-03-12	Halbleiterspeichervorrichtung
DE69130993D1 (de)	1999-04-22	Nichtflüchtige Halbleiterspeicheranordnung
DE69328517D1 (de)	2000-06-08	Nichtflüchtige Halbleiterspeicheranordnung
DE69032678D1 (de)	1998-10-29	Nichtflüchtige Halbleiterspeicheranordnung
DE69325152D1 (de)	1999-07-08	Nichtflüchtige Halbleiterspeicheranordnung
DE69520902D1 (de)	2001-06-21	Nichtflüchtige Halbleiterspeicheranordnung
DE69232950D1 (de)	2003-04-10	Halbleiterspeichervorrichtung
DE69128635D1 (de)	1998-02-12	Nicht-flüchtiger halbleiterspeicher
DE69417712D1 (de)	1999-05-12	Nichtflüchtige Halbleiter-Speichereinrichtung
DE69230750D1 (de)	2000-04-13	Nichtflüchtige Halbleiterspeicheranordnung
DE69221218D1 (de)	1997-09-04	Halbleiterspeicher
DE69119277D1 (de)	1996-06-13	Nichtflüchtiger Halbleiterspeicher
DE69216695D1 (de)	1997-02-27	Halbleiterspeicher
KR910001776A (ko)	1991-01-31	비휘발성 반도체 메모리장치
DE69317937D1 (de)	1998-05-20	Nichtflüchtige Halbleiterspeicheranordnung
DE69125692D1 (de)	1997-05-22	Nichtflüchtiger Halbleiter-Speicher
DE69220101D1 (de)	1997-07-10	Halbleiterspeichereinrichtung
DE69219518D1 (de)	1997-06-12	Halbleiterspeicheranordnung
DE69427835D1 (de)	2001-08-30	Nichtflüchtige Halbleiterspeicheranordnung
DE69123814D1 (de)	1997-02-06	Nichtflüchtige Halbleiterspeicheranordnung
DE69218878D1 (de)	1997-05-15	Nichtflüchtiger Halbleiterspeicher
DE69406037D1 (de)	1997-11-13	Nicht-flüchtige Halbleiterspeicheranordnung
DE69222793D1 (de)	1997-11-27	Halbleiterspeicheranordnung