DE69124672D1 - Verfahren zur Substratbearbeitung - Google Patents
Verfahren zur SubstratbearbeitungInfo
- Publication number
- DE69124672D1 DE69124672D1 DE69124672T DE69124672T DE69124672D1 DE 69124672 D1 DE69124672 D1 DE 69124672D1 DE 69124672 T DE69124672 T DE 69124672T DE 69124672 T DE69124672 T DE 69124672T DE 69124672 D1 DE69124672 D1 DE 69124672D1
- Authority
- DE
- Germany
- Prior art keywords
- substrate processing
- substrate
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3345—Problems associated with etching anisotropy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3348—Problems associated with etching control of ion bombardment energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2335671A JP2888258B2 (ja) | 1990-11-30 | 1990-11-30 | 基板処理装置および基板処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69124672D1 true DE69124672D1 (de) | 1997-03-27 |
| DE69124672T2 DE69124672T2 (de) | 1997-06-19 |
Family
ID=18291212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69124672T Expired - Lifetime DE69124672T2 (de) | 1990-11-30 | 1991-11-29 | Verfahren zur Substratbearbeitung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5385624A (de) |
| EP (2) | EP0680070A1 (de) |
| JP (1) | JP2888258B2 (de) |
| KR (1) | KR100238623B1 (de) |
| DE (1) | DE69124672T2 (de) |
| TW (1) | TW285745B (de) |
Families Citing this family (70)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04253328A (ja) * | 1991-01-29 | 1992-09-09 | Hitachi Ltd | 表面処理装置 |
| DE4132558C1 (de) * | 1991-09-30 | 1992-12-03 | Secon Halbleiterproduktionsgeraete Ges.M.B.H., Wien, At | |
| US5423936A (en) * | 1992-10-19 | 1995-06-13 | Hitachi, Ltd. | Plasma etching system |
| JPH06188229A (ja) * | 1992-12-16 | 1994-07-08 | Tokyo Electron Yamanashi Kk | エッチングの後処理方法 |
| US5578129A (en) * | 1993-03-17 | 1996-11-26 | Tokyo Electron Limited | Gas supplying head and load lock chamber of semiconductor processing system |
| JP3223661B2 (ja) * | 1993-08-31 | 2001-10-29 | ソニー株式会社 | プラズマ堆積方法 |
| US5783100A (en) * | 1994-03-16 | 1998-07-21 | Micron Display Technology, Inc. | Method of high density plasma etching for semiconductor manufacture |
| US5811022A (en) | 1994-11-15 | 1998-09-22 | Mattson Technology, Inc. | Inductive plasma reactor |
| US5571577A (en) * | 1995-04-07 | 1996-11-05 | Board Of Trustees Operating Michigan State University | Method and apparatus for plasma treatment of a surface |
| KR100275597B1 (ko) * | 1996-02-23 | 2000-12-15 | 나카네 히사시 | 플리즈마처리장치 |
| US6248206B1 (en) * | 1996-10-01 | 2001-06-19 | Applied Materials Inc. | Apparatus for sidewall profile control during an etch process |
| DE19734278C1 (de) * | 1997-08-07 | 1999-02-25 | Bosch Gmbh Robert | Vorrichtung zum anisotropen Ätzen von Substraten |
| JP3317209B2 (ja) * | 1997-08-12 | 2002-08-26 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US6049736A (en) * | 1997-09-03 | 2000-04-11 | Medtronic, Inc. | Implantable medical device with electrode lead having improved surface characteristics |
| US6399445B1 (en) | 1997-12-18 | 2002-06-04 | Texas Instruments Incorporated | Fabrication technique for controlled incorporation of nitrogen in gate dielectric |
| US6107192A (en) * | 1997-12-30 | 2000-08-22 | Applied Materials, Inc. | Reactive preclean prior to metallization for sub-quarter micron application |
| US6013316A (en) * | 1998-02-07 | 2000-01-11 | Odme | Disc master drying cover assembly |
| US6635578B1 (en) | 1998-02-09 | 2003-10-21 | Applied Materials, Inc | Method of operating a dual chamber reactor with neutral density decoupled from ion density |
| US6352049B1 (en) | 1998-02-09 | 2002-03-05 | Applied Materials, Inc. | Plasma assisted processing chamber with separate control of species density |
| WO1999040609A1 (en) * | 1998-02-09 | 1999-08-12 | Applied Materials, Inc. | Plasma assisted processing chamber with separate control of species density |
| US6074514A (en) | 1998-02-09 | 2000-06-13 | Applied Materials, Inc. | High selectivity etch using an external plasma discharge |
| US6611249B1 (en) | 1998-07-22 | 2003-08-26 | Silicon Graphics, Inc. | System and method for providing a wide aspect ratio flat panel display monitor independent white-balance adjustment and gamma correction capabilities |
| US6742701B2 (en) * | 1998-09-17 | 2004-06-01 | Kabushiki Kaisha Tamura Seisakusho | Bump forming method, presoldering treatment method, soldering method, bump forming apparatus, presoldering treatment device and soldering apparatus |
| US6291361B1 (en) * | 1999-03-24 | 2001-09-18 | Conexant Systems, Inc. | Method and apparatus for high-resolution in-situ plasma etching of inorganic and metal films |
| JP4382265B2 (ja) * | 2000-07-12 | 2009-12-09 | 日本電気株式会社 | 酸化シリコン膜の形成方法及びその形成装置 |
| WO2002061179A1 (en) * | 2001-01-19 | 2002-08-08 | Tokyo Electron Limited | Method and apparatus for gas injection system with minimum particulate contamination |
| CN1302152C (zh) * | 2001-03-19 | 2007-02-28 | 株式会社Ips | 化学气相沉积设备 |
| US6991739B2 (en) * | 2001-10-15 | 2006-01-31 | Applied Materials, Inc. | Method of photoresist removal in the presence of a dielectric layer having a low k-value |
| WO2003046970A1 (en) * | 2001-11-21 | 2003-06-05 | The Regents Of The University Of California | Low temperature compatible wide-pressure-range plasma flow device |
| US7013834B2 (en) | 2002-04-19 | 2006-03-21 | Nordson Corporation | Plasma treatment system |
| KR100439948B1 (ko) * | 2002-04-19 | 2004-07-12 | 주식회사 아이피에스 | 리모트 플라즈마 ａｌｄ 장치 및 이를 이용한 ａｌｄ 박막증착방법 |
| KR100496903B1 (ko) * | 2002-10-12 | 2005-06-28 | 주식회사 아이피에스 | Ａｌｄ 박막증착장치 및 그를 이용한 박막증착방법 |
| KR100496906B1 (ko) * | 2002-10-21 | 2005-06-28 | 주식회사 아이피에스 | Ａｌｄ 박막증착장치 |
| JP4673290B2 (ja) * | 2003-02-14 | 2011-04-20 | アプライド マテリアルズ インコーポレイテッド | 水素含有ラジカルによる未変性酸化物の洗浄 |
| US7232767B2 (en) * | 2003-04-01 | 2007-06-19 | Mattson Technology, Inc. | Slotted electrostatic shield modification for improved etch and CVD process uniformity |
| FR2858333B1 (fr) | 2003-07-31 | 2006-12-08 | Cit Alcatel | Procede et dispositif pour le depot peu agressif de films dielectriques en phase vapeur assiste par plasma |
| US7521000B2 (en) | 2003-08-28 | 2009-04-21 | Applied Materials, Inc. | Process for etching photomasks |
| KR100561848B1 (ko) * | 2003-11-04 | 2006-03-16 | 삼성전자주식회사 | 헬리컬 공진기형 플라즈마 처리 장치 |
| JP4246654B2 (ja) * | 2004-03-08 | 2009-04-02 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
| US20060000802A1 (en) * | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
| US8349128B2 (en) | 2004-06-30 | 2013-01-08 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
| JP4570659B2 (ja) * | 2004-08-04 | 2010-10-27 | インダストリー−ユニヴァーシティ コオペレーション ファウンデーション ハニャン ユニヴァーシティ | Ｄｃバイアスを利用したリモートプラズマ原子層蒸着装置及び方法 |
| US7597816B2 (en) * | 2004-09-03 | 2009-10-06 | Lam Research Corporation | Wafer bevel polymer removal |
| US7879510B2 (en) | 2005-01-08 | 2011-02-01 | Applied Materials, Inc. | Method for quartz photomask plasma etching |
| US7829243B2 (en) * | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
| KR100823949B1 (ko) * | 2005-06-30 | 2008-04-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 포토마스크 플라즈마 에칭 방법 및 장치 |
| US7358484B2 (en) | 2005-09-29 | 2008-04-15 | Tokyo Electron Limited | Hyperthermal neutral beam source and method of operating |
| JP2008052911A (ja) * | 2006-08-22 | 2008-03-06 | Shinku Device:Kk | プラズマ照射装置 |
| US7943005B2 (en) | 2006-10-30 | 2011-05-17 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
| US7909961B2 (en) | 2006-10-30 | 2011-03-22 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
| US20080156772A1 (en) * | 2006-12-29 | 2008-07-03 | Yunsang Kim | Method and apparatus for wafer edge processing |
| US7967996B2 (en) * | 2007-01-30 | 2011-06-28 | Applied Materials, Inc. | Process for wafer backside polymer removal and wafer front side photoresist removal |
| US7552736B2 (en) | 2007-01-30 | 2009-06-30 | Applied Materials, Inc. | Process for wafer backside polymer removal with a ring of plasma under the wafer |
| US8334506B2 (en) | 2007-12-10 | 2012-12-18 | 1St Detect Corporation | End cap voltage control of ion traps |
| US7973277B2 (en) * | 2008-05-27 | 2011-07-05 | 1St Detect Corporation | Driving a mass spectrometer ion trap or mass filter |
| CN101640997B (zh) * | 2008-07-31 | 2011-10-05 | 英业达股份有限公司 | 主板模块阵列 |
| US20100270262A1 (en) * | 2009-04-22 | 2010-10-28 | Applied Materials, Inc. | Etching low-k dielectric or removing resist with a filtered ionized gas |
| JP5486383B2 (ja) * | 2010-04-13 | 2014-05-07 | 富士フイルム株式会社 | ドライエッチング方法及び装置 |
| US8802545B2 (en) * | 2011-03-14 | 2014-08-12 | Plasma-Therm Llc | Method and apparatus for plasma dicing a semi-conductor wafer |
| US20140174359A1 (en) * | 2011-09-09 | 2014-06-26 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Plasma generator and cvd device |
| KR101495288B1 (ko) * | 2012-06-04 | 2015-02-24 | 피에스케이 주식회사 | 기판 처리 장치 및 방법 |
| JP2014049529A (ja) * | 2012-08-30 | 2014-03-17 | Tokyo Electron Ltd | プラズマ処理装置及び金属の酸化膜を洗浄する方法 |
| WO2014161199A1 (zh) * | 2013-04-03 | 2014-10-09 | Wang Dongjun | 等离子体增强原子层沉积设备 |
| GB201318249D0 (en) * | 2013-10-15 | 2013-11-27 | Spts Technologies Ltd | Plasma etching apparatus |
| FR3022070B1 (fr) * | 2014-06-04 | 2016-06-24 | Univ D'aix-Marseille | Procede de texturation aleatoire d'un substrat semiconducteur |
| JP2017152531A (ja) * | 2016-02-24 | 2017-08-31 | 東京エレクトロン株式会社 | 基板処理方法 |
| JP2017162931A (ja) * | 2016-03-08 | 2017-09-14 | 株式会社ディスコ | デバイスチップの製造方法 |
| KR102096700B1 (ko) * | 2017-03-29 | 2020-04-02 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법 |
| US20190198301A1 (en) * | 2017-12-27 | 2019-06-27 | Mattson Technology, Inc. | Plasma Processing Apparatus and Methods |
| EP4224512A1 (de) * | 2020-09-30 | 2023-08-09 | Bondtech Co., Ltd. | Substratbindungsverfahren und substratbindungssystem |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS543343A (en) * | 1977-06-08 | 1979-01-11 | Rainfuaruto Kougiyou Kk | Method of thin layer paving |
| US4431898A (en) * | 1981-09-01 | 1984-02-14 | The Perkin-Elmer Corporation | Inductively coupled discharge for plasma etching and resist stripping |
| JPS58168230A (ja) * | 1982-03-30 | 1983-10-04 | Fujitsu Ltd | マイクロ波プラズマ処理方法 |
| JPS627271A (ja) * | 1985-07-04 | 1987-01-14 | Toshiba Corp | 電子スチルカメラ |
| JPS6210687A (ja) * | 1985-07-09 | 1987-01-19 | 三双電機株式会社 | 集団教育装置 |
| DE3717985A1 (de) * | 1986-05-28 | 1987-12-03 | Minolta Camera Kk | Elektrochrome vorrichtung |
| JPS63116428A (ja) * | 1986-11-05 | 1988-05-20 | Hitachi Ltd | ドライエツチング方法 |
| JP2631650B2 (ja) * | 1986-12-05 | 1997-07-16 | アネルバ株式会社 | 真空装置 |
| JPH01183121A (ja) * | 1988-01-18 | 1989-07-20 | Hitachi Ltd | アッシング装置 |
| JPH0642462B2 (ja) * | 1988-09-07 | 1994-06-01 | 日電アネルバ株式会社 | プラズマ処理装置 |
| KR930004115B1 (ko) * | 1988-10-31 | 1993-05-20 | 후지쓰 가부시끼가이샤 | 애싱(ashing)처리방법 및 장치 |
| DE69033452T2 (de) * | 1989-09-08 | 2000-06-29 | Tokyo Electron Ltd., Tokio/Tokyo | Vorrichtung und Verfahren zum Behandeln von Substraten |
| KR910016054A (ko) * | 1990-02-23 | 1991-09-30 | 미다 가쓰시게 | 마이크로 전자 장치용 표면 처리 장치 및 그 방법 |
| JPH0775226B2 (ja) * | 1990-04-10 | 1995-08-09 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | プラズマ処理方法及び装置 |
-
1990
- 1990-11-30 JP JP2335671A patent/JP2888258B2/ja not_active Expired - Lifetime
-
1991
- 1991-11-27 KR KR1019910021425A patent/KR100238623B1/ko not_active IP Right Cessation
- 1991-11-28 TW TW080109383A patent/TW285745B/zh not_active IP Right Cessation
- 1991-11-29 DE DE69124672T patent/DE69124672T2/de not_active Expired - Lifetime
- 1991-11-29 EP EP95110162A patent/EP0680070A1/de not_active Withdrawn
- 1991-11-29 US US07/800,026 patent/US5385624A/en not_active Expired - Lifetime
- 1991-11-29 EP EP91120577A patent/EP0488393B1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR920010777A (ko) | 1992-06-27 |
| EP0488393B1 (de) | 1997-02-12 |
| TW285745B (de) | 1996-09-11 |
| JP2888258B2 (ja) | 1999-05-10 |
| EP0488393A2 (de) | 1992-06-03 |
| US5385624A (en) | 1995-01-31 |
| EP0488393A3 (en) | 1992-07-15 |
| EP0680070A1 (de) | 1995-11-02 |
| DE69124672T2 (de) | 1997-06-19 |
| JPH04206719A (ja) | 1992-07-28 |
| KR100238623B1 (ko) | 2000-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |