DE69026301T2 - Supraleitende Einrichtung und deren Herstellungsverfahren - Google Patents

Supraleitende Einrichtung und deren Herstellungsverfahren

Info

Publication number
DE69026301T2
DE69026301T2 DE69026301T DE69026301T DE69026301T2 DE 69026301 T2 DE69026301 T2 DE 69026301T2 DE 69026301 T DE69026301 T DE 69026301T DE 69026301 T DE69026301 T DE 69026301T DE 69026301 T2 DE69026301 T2 DE 69026301T2
Authority
DE
Germany
Prior art keywords
manufacturing process
superconducting device
superconducting
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69026301T
Other languages
English (en)
Other versions
DE69026301D1 (de
Inventor
Hidetaka Higashino
Koichi Mizuno
Kentaro Setsune
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69026301D1 publication Critical patent/DE69026301D1/de
Publication of DE69026301T2 publication Critical patent/DE69026301T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/30—Devices switchable between superconducting and normal states
    • H10N60/35—Cryotrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE69026301T 1989-05-12 1990-05-11 Supraleitende Einrichtung und deren Herstellungsverfahren Expired - Fee Related DE69026301T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11894489 1989-05-12

Publications (2)

Publication Number Publication Date
DE69026301D1 DE69026301D1 (de) 1996-05-09
DE69026301T2 true DE69026301T2 (de) 1996-09-05

Family

ID=14749107

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69026301T Expired - Fee Related DE69026301T2 (de) 1989-05-12 1990-05-11 Supraleitende Einrichtung und deren Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5481119A (de)
EP (1) EP0397186B1 (de)
JP (1) JP2538096B2 (de)
DE (1) DE69026301T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2027067C (en) * 1989-10-06 1996-07-23 Saburo Tanaka Method for forming a continuous oxide superconductor layer having different thickness portions for superconductor device
US5101243A (en) * 1990-05-21 1992-03-31 International Business Machines Corporation Superconducting device structures employing anisotropy of the material energy gap
DE69112582T2 (de) * 1990-12-05 1996-02-08 Air Liquide Elektrische Schaltzelle und ihre Anwendung.
EP0491496B1 (de) * 1990-12-19 1995-09-13 AT&T Corp. Artikel mit supraleiter/isolator Lagenstruktur und Verfahren zur Herstellung des Artikels
CA2065625C (en) * 1991-04-09 1997-07-01 Hiroshi Inada Process for patterning layered thin films including a superconductor layer
US7615385B2 (en) 2006-09-20 2009-11-10 Hypres, Inc Double-masking technique for increasing fabrication yield in superconducting electronics
US8952529B2 (en) * 2011-11-22 2015-02-10 Stats Chippac, Ltd. Semiconductor device with conductive layer over substrate with vents to channel bump material and reduce interconnect voids
WO2014197047A2 (en) * 2013-03-11 2014-12-11 Massachusetts Institute Of Technology Superconducting three-terminal device and logic gates
JP6254032B2 (ja) * 2014-03-28 2017-12-27 住友重機械工業株式会社 Ｓｎｓ型ジョセフソン接合素子の製造方法及びｓｎｓ型ジョセフソン接合素子製造装置
US10749097B2 (en) 2015-04-03 2020-08-18 Massachusetts Institute Of Technology Current crowding in three-terminal superconducting devices and related methods
JP6831452B2 (ja) * 2016-09-13 2021-02-17 グーグル エルエルシーＧｏｏｇｌｅ ＬＬＣ フォトレジスト現像液によるエッチングを防ぐためのバッファ層
WO2019160572A2 (en) 2017-05-16 2019-08-22 PsiQuantum Corp. Gated superconducting photon detector
WO2019160573A2 (en) 2017-05-16 2019-08-22 PsiQuantum Corp. Superconducting signal amplifier
WO2018232332A1 (en) 2017-06-15 2018-12-20 PsiQuantum Corp. Niobium-germanium superconducting photon detector
US10566516B2 (en) 2017-07-28 2020-02-18 PsiQuantum Corp. Photodetector with superconductor nanowire transistor based on interlayer heat transfer
US10374611B2 (en) 2017-10-05 2019-08-06 PsiQuantum Corp. Superconducting logic components
US10461445B2 (en) 2017-11-13 2019-10-29 PsiQuantum Corp. Methods and devices for impedance multiplication
WO2019152909A1 (en) 2018-02-05 2019-08-08 Massachusetts Institute Of Technology Superconducting nanowire-based programmable processor
WO2019157077A1 (en) 2018-02-06 2019-08-15 PsiQuantum Corp. Superconducting photon detector
US10879905B2 (en) 2018-02-14 2020-12-29 PsiQuantum Corp. Superconducting field-programmable gate array
WO2019213147A1 (en) 2018-05-01 2019-11-07 PsiQuantum Corp. Photon number resolving superconducting detector
US10984857B2 (en) 2018-08-16 2021-04-20 PsiQuantum Corp. Superconductive memory cells and devices
US10573800B1 (en) 2018-08-21 2020-02-25 PsiQuantum Corp. Superconductor-to-insulator devices
US11101215B2 (en) 2018-09-19 2021-08-24 PsiQuantum Corp. Tapered connectors for superconductor circuits
US11719653B1 (en) 2018-09-21 2023-08-08 PsiQuantum Corp. Methods and systems for manufacturing superconductor devices
US10944403B2 (en) * 2018-10-27 2021-03-09 PsiQuantum Corp. Superconducting field-programmable gate array
US11289590B1 (en) 2019-01-30 2022-03-29 PsiQuantum Corp. Thermal diode switch
US11569816B1 (en) 2019-04-10 2023-01-31 PsiQuantum Corp. Superconducting switch
US11009387B2 (en) 2019-04-16 2021-05-18 PsiQuantum Corp. Superconducting nanowire single photon detector and method of fabrication thereof
US11380731B1 (en) 2019-09-26 2022-07-05 PsiQuantum Corp. Superconducting device with asymmetric impedance
US11585695B1 (en) 2019-10-21 2023-02-21 PsiQuantum Corp. Self-triaging photon detector
US11994426B1 (en) 2019-11-13 2024-05-28 PsiQuantum Corp. Scalable photon number resolving photon detector
US11563162B2 (en) * 2020-01-09 2023-01-24 International Business Machines Corporation Epitaxial Josephson junction transmon device
CN115346891A (zh) * 2021-05-14 2022-11-15 日扬科技股份有限公司 整合雷射与微波的退火***及退火方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4157555A (en) * 1977-11-07 1979-06-05 The United States Of America As Represented By The United States Department Of Energy Superconducting transistor
US4334158A (en) * 1980-06-06 1982-06-08 International Business Machines Corporation Superconducting switch and amplifier device
JPS592389B2 (ja) * 1980-10-30 1984-01-18 工業技術院長 準粒子注入制御型超電導弱結合素子
JPS60160675A (ja) * 1984-02-01 1985-08-22 Hitachi Ltd 準粒子注入型超電導素子
US4837609A (en) * 1987-09-09 1989-06-06 American Telephone And Telegraph Company, At&T Bell Laboratories Semiconductor devices having superconducting interconnects
FR2638569B1 (fr) * 1988-10-25 1992-11-20 Seiko Epson Corp Transistor josephson du type a effet de champ et procede de fabrication d'une jonction josephson
JP2508259B2 (ja) * 1989-04-13 1996-06-19 日本電気株式会社 超伝導三端子素子およびその製造方法

Also Published As

Publication number Publication date
JPH0380577A (ja) 1991-04-05
EP0397186A2 (de) 1990-11-14
JP2538096B2 (ja) 1996-09-25
US5481119A (en) 1996-01-02
DE69026301D1 (de) 1996-05-09
EP0397186B1 (de) 1996-04-03
EP0397186A3 (de) 1991-04-03

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee