KR890015360A - 반도체장치 및 그 제조방법 - Google Patents
반도체장치 및 그 제조방법Info
- Publication number
- KR890015360A KR890015360A KR1019890003338A KR890003338A KR890015360A KR 890015360 A KR890015360 A KR 890015360A KR 1019890003338 A KR1019890003338 A KR 1019890003338A KR 890003338 A KR890003338 A KR 890003338A KR 890015360 A KR890015360 A KR 890015360A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8252—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using III-V technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP88-64041 | 1988-03-17 | ||
JP63064041A JPH01236657A (ja) | 1988-03-17 | 1988-03-17 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890015360A true KR890015360A (ko) | 1989-10-30 |
KR930000603B1 KR930000603B1 (ko) | 1993-01-25 |
Family
ID=13246632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890003338A KR930000603B1 (ko) | 1988-03-17 | 1989-03-17 | 반도체장치 및 그 제조방법 |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0338251B1 (ko) |
JP (1) | JPH01236657A (ko) |
KR (1) | KR930000603B1 (ko) |
DE (1) | DE68922653T2 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07105473B2 (ja) * | 1988-06-30 | 1995-11-13 | 株式会社東芝 | Mes fetの製造方法 |
JP2647200B2 (ja) * | 1989-06-29 | 1997-08-27 | シャープ株式会社 | 化合物半導体増幅装置 |
US5100831A (en) * | 1990-02-16 | 1992-03-31 | Sumitomo Electric Industries, Ltd. | Method for fabricating semiconductor device |
US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5887879A (ja) * | 1981-11-20 | 1983-05-25 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタ |
JPS5897874A (ja) * | 1981-12-07 | 1983-06-10 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタの製造方法 |
JPS5918679A (ja) * | 1982-07-22 | 1984-01-31 | Fujitsu Ltd | 半導体装置 |
EP0112657B1 (en) * | 1982-11-29 | 1990-06-20 | Fujitsu Limited | Field effect transistor and process for fabricating it |
JPS59191386A (ja) * | 1983-04-14 | 1984-10-30 | Nec Corp | 半導体装置とその製造方法 |
CA1201538A (en) * | 1983-07-25 | 1986-03-04 | Ajit G. Rode | Method of manufacturing field effect transistors |
JPS62262466A (ja) * | 1986-05-09 | 1987-11-14 | Toshiba Corp | Mes fetの製造方法 |
-
1988
- 1988-03-17 JP JP63064041A patent/JPH01236657A/ja active Pending
-
1989
- 1989-03-16 EP EP89104703A patent/EP0338251B1/en not_active Expired - Lifetime
- 1989-03-16 DE DE68922653T patent/DE68922653T2/de not_active Expired - Fee Related
- 1989-03-17 KR KR1019890003338A patent/KR930000603B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE68922653T2 (de) | 1995-09-28 |
DE68922653D1 (de) | 1995-06-22 |
EP0338251A1 (en) | 1989-10-25 |
JPH01236657A (ja) | 1989-09-21 |
EP0338251B1 (en) | 1995-05-17 |
KR930000603B1 (ko) | 1993-01-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20021231 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |