NL8900748A - Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. - Google Patents
Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. Download PDFInfo
- Publication number
- NL8900748A NL8900748A NL8900748A NL8900748A NL8900748A NL 8900748 A NL8900748 A NL 8900748A NL 8900748 A NL8900748 A NL 8900748A NL 8900748 A NL8900748 A NL 8900748A NL 8900748 A NL8900748 A NL 8900748A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- radiation
- intermediate layer
- containment
- mesa
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 78
- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims description 25
- 230000004888 barrier function Effects 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 16
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229910005540 GaP Inorganic materials 0.000 claims description 7
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- 230000005855 radiation Effects 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000000927 vapour-phase epitaxy Methods 0.000 description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 4
- 238000004943 liquid phase epitaxy Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 101150078994 La gene Proteins 0.000 description 1
- 241000220324 Pyrus Species 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 235000015110 jellies Nutrition 0.000 description 1
- 239000008274 jelly Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000021017 pears Nutrition 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8900748A NL8900748A (nl) | 1989-03-28 | 1989-03-28 | Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
EP90200679A EP0390262B1 (de) | 1989-03-28 | 1990-03-22 | Strahlungemittierende Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung |
DE69004842T DE69004842T2 (de) | 1989-03-28 | 1990-03-22 | Strahlungemittierende Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung. |
KR1019900004035A KR900015361A (ko) | 1989-03-28 | 1990-03-26 | 방사 방출 반도체 다이오드 및 그 제조방법 |
JP7580290A JP3093234B2 (ja) | 1989-03-28 | 1990-03-27 | 放射線放出半導体デバイスおよびその製造方法 |
US08/246,392 US5381024A (en) | 1989-03-28 | 1994-05-20 | Radiation-emitting semiconductor device with an intermediate barrier layer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8900748A NL8900748A (nl) | 1989-03-28 | 1989-03-28 | Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
NL8900748 | 1989-03-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL8900748A true NL8900748A (nl) | 1990-10-16 |
Family
ID=19854361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8900748A NL8900748A (nl) | 1989-03-28 | 1989-03-28 | Straling-emitterende halfgeleiderinrichting en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5381024A (de) |
EP (1) | EP0390262B1 (de) |
JP (1) | JP3093234B2 (de) |
KR (1) | KR900015361A (de) |
DE (1) | DE69004842T2 (de) |
NL (1) | NL8900748A (de) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5381026A (en) * | 1990-09-17 | 1995-01-10 | Kabushiki Kaisha Toshiba | Insulated-gate thyristor |
DE69312799T2 (de) * | 1992-05-18 | 1998-02-12 | Philips Electronics Nv | Optoelektronische Halbleiteranordnung |
US5578839A (en) | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
JPH07162089A (ja) * | 1993-12-13 | 1995-06-23 | Mitsubishi Electric Corp | 可視光レーザダイオード及びその製造方法 |
DE59510543D1 (de) * | 1994-11-17 | 2003-03-06 | Infineon Technologies Ag | Verfahren zur Befestigung eines ersten Substrates auf einem zweiten Substrat und Verwendung des Verfahrens zur Herstellung einer dreidimensionalen Schaltungsanordnung |
EP0766879A2 (de) * | 1995-04-19 | 1997-04-09 | Koninklijke Philips Electronics N.V. | Verfahren zur herstellung einer elektrooptischen vorrichtung, insbesondere einer halbleiterlaserdiode |
EP0846342A1 (de) * | 1996-06-24 | 1998-06-10 | Koninklijke Philips Electronics N.V. | Strahlungsemittierende halbleiter-diodeund herstellungsverfahren |
US5889805A (en) * | 1996-11-01 | 1999-03-30 | Coherent, Inc. | Low-threshold high-efficiency laser diodes with aluminum-free active region |
KR100239473B1 (ko) * | 1997-08-20 | 2000-02-01 | 구자홍 | 레이저 다이오드 및 그 제조방법 |
JPH11135834A (ja) | 1997-10-27 | 1999-05-21 | Matsushita Electric Ind Co Ltd | 発光ダイオード装置及びその製造方法 |
JP2001015851A (ja) * | 1999-07-01 | 2001-01-19 | Sony Corp | 半導体レーザ素子及びその作製方法 |
US7049761B2 (en) | 2000-02-11 | 2006-05-23 | Altair Engineering, Inc. | Light tube and power supply circuit |
JP2001291895A (ja) * | 2000-04-06 | 2001-10-19 | Sharp Corp | 半導体発光素子 |
JP4599687B2 (ja) * | 2000-08-08 | 2010-12-15 | ソニー株式会社 | レーザダイオード、半導体発光装置および製造方法 |
JP2002204032A (ja) * | 2000-10-31 | 2002-07-19 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
JP4885434B2 (ja) * | 2003-11-27 | 2012-02-29 | シャープ株式会社 | 半導体レーザ素子、光ディスク装置および光伝送システム |
JP2009188435A (ja) * | 2003-11-11 | 2009-08-20 | Sharp Corp | 半導体レーザ素子およびその製造方法および光ディスク装置および光伝送システム |
JP2005175450A (ja) * | 2003-11-21 | 2005-06-30 | Sharp Corp | 化合物半導体装置およびその製造方法、ならびにその化合物半導体装置を備えた光ディスク装置 |
JP4884698B2 (ja) * | 2005-04-27 | 2012-02-29 | シャープ株式会社 | 半導体装置の製造方法、半導体レーザ装置、光伝送モジュールおよび光ディスク装置 |
JP2007049088A (ja) * | 2005-08-12 | 2007-02-22 | Rohm Co Ltd | 高出力赤色半導体レーザ |
US8118447B2 (en) | 2007-12-20 | 2012-02-21 | Altair Engineering, Inc. | LED lighting apparatus with swivel connection |
US7712918B2 (en) | 2007-12-21 | 2010-05-11 | Altair Engineering , Inc. | Light distribution using a light emitting diode assembly |
US8360599B2 (en) | 2008-05-23 | 2013-01-29 | Ilumisys, Inc. | Electric shock resistant L.E.D. based light |
US7976196B2 (en) | 2008-07-09 | 2011-07-12 | Altair Engineering, Inc. | Method of forming LED-based light and resulting LED-based light |
US7946729B2 (en) | 2008-07-31 | 2011-05-24 | Altair Engineering, Inc. | Fluorescent tube replacement having longitudinally oriented LEDs |
US8674626B2 (en) | 2008-09-02 | 2014-03-18 | Ilumisys, Inc. | LED lamp failure alerting system |
US8256924B2 (en) | 2008-09-15 | 2012-09-04 | Ilumisys, Inc. | LED-based light having rapidly oscillating LEDs |
US8444292B2 (en) | 2008-10-24 | 2013-05-21 | Ilumisys, Inc. | End cap substitute for LED-based tube replacement light |
US8901823B2 (en) | 2008-10-24 | 2014-12-02 | Ilumisys, Inc. | Light and light sensor |
US8214084B2 (en) | 2008-10-24 | 2012-07-03 | Ilumisys, Inc. | Integration of LED lighting with building controls |
US8653984B2 (en) | 2008-10-24 | 2014-02-18 | Ilumisys, Inc. | Integration of LED lighting control with emergency notification systems |
US7938562B2 (en) | 2008-10-24 | 2011-05-10 | Altair Engineering, Inc. | Lighting including integral communication apparatus |
US8324817B2 (en) | 2008-10-24 | 2012-12-04 | Ilumisys, Inc. | Light and light sensor |
US8556452B2 (en) | 2009-01-15 | 2013-10-15 | Ilumisys, Inc. | LED lens |
US8362710B2 (en) | 2009-01-21 | 2013-01-29 | Ilumisys, Inc. | Direct AC-to-DC converter for passive component minimization and universal operation of LED arrays |
US8664880B2 (en) | 2009-01-21 | 2014-03-04 | Ilumisys, Inc. | Ballast/line detection circuit for fluorescent replacement lamps |
US8330381B2 (en) | 2009-05-14 | 2012-12-11 | Ilumisys, Inc. | Electronic circuit for DC conversion of fluorescent lighting ballast |
US8299695B2 (en) | 2009-06-02 | 2012-10-30 | Ilumisys, Inc. | Screw-in LED bulb comprising a base having outwardly projecting nodes |
US8421366B2 (en) | 2009-06-23 | 2013-04-16 | Ilumisys, Inc. | Illumination device including LEDs and a switching power control system |
WO2011119921A2 (en) | 2010-03-26 | 2011-09-29 | Altair Engineering, Inc. | Led light with thermoelectric generator |
CA2794512A1 (en) | 2010-03-26 | 2011-09-29 | David L. Simon | Led light tube with dual sided light distribution |
EP2553332B1 (de) | 2010-03-26 | 2016-03-23 | iLumisys, Inc. | Umgestülpte led-glühlampe |
US8454193B2 (en) | 2010-07-08 | 2013-06-04 | Ilumisys, Inc. | Independent modules for LED fluorescent light tube replacement |
US8596813B2 (en) | 2010-07-12 | 2013-12-03 | Ilumisys, Inc. | Circuit board mount for LED light tube |
EP2633227B1 (de) | 2010-10-29 | 2018-08-29 | iLumisys, Inc. | Mechanismen zur minimierung des risikos von elektroschocks während der installation einer lichtröhre |
US8870415B2 (en) | 2010-12-09 | 2014-10-28 | Ilumisys, Inc. | LED fluorescent tube replacement light with reduced shock hazard |
JP5792486B2 (ja) * | 2011-03-18 | 2015-10-14 | 株式会社東芝 | 半導体発光素子および光結合装置 |
US9072171B2 (en) | 2011-08-24 | 2015-06-30 | Ilumisys, Inc. | Circuit board mount for LED light |
US9184518B2 (en) | 2012-03-02 | 2015-11-10 | Ilumisys, Inc. | Electrical connector header for an LED-based light |
WO2014008463A1 (en) | 2012-07-06 | 2014-01-09 | Ilumisys, Inc. | Power supply assembly for led-based light tube |
US9271367B2 (en) | 2012-07-09 | 2016-02-23 | Ilumisys, Inc. | System and method for controlling operation of an LED-based light |
US9285084B2 (en) | 2013-03-14 | 2016-03-15 | Ilumisys, Inc. | Diffusers for LED-based lights |
US9267650B2 (en) | 2013-10-09 | 2016-02-23 | Ilumisys, Inc. | Lens for an LED-based light |
KR20160111975A (ko) | 2014-01-22 | 2016-09-27 | 일루미시스, 인크. | 어드레스된 led들을 갖는 led 기반 조명 |
US9510400B2 (en) | 2014-05-13 | 2016-11-29 | Ilumisys, Inc. | User input systems for an LED-based light |
US10161568B2 (en) | 2015-06-01 | 2018-12-25 | Ilumisys, Inc. | LED-based light with canted outer walls |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2856507A1 (de) * | 1978-12-28 | 1980-07-17 | Amann Markus Christian Dipl In | Halbleiter-laserdiode |
JPS58219789A (ja) * | 1982-06-16 | 1983-12-21 | Hitachi Ltd | 埋込み型光半導体装置 |
US4427841A (en) * | 1982-06-29 | 1984-01-24 | The United States Of America As Represented By The Secretary Of The Air Force | Back barrier heteroface AlGaAs solar cell |
DE3234389C2 (de) * | 1982-09-16 | 1995-03-09 | Siemens Ag | Halbleiter-Laserdiode |
JPS59165474A (ja) * | 1983-03-10 | 1984-09-18 | Nec Corp | 半導体発光素子 |
GB2139422B (en) * | 1983-03-24 | 1987-06-03 | Hitachi Ltd | Semiconductor laser and method of fabricating the same |
JPS60229389A (ja) * | 1984-04-26 | 1985-11-14 | Sharp Corp | 半導体レ−ザ素子 |
US4615032A (en) * | 1984-07-13 | 1986-09-30 | At&T Bell Laboratories | Self-aligned rib-waveguide high power laser |
JPH0722213B2 (ja) * | 1985-06-12 | 1995-03-08 | 三洋電機株式会社 | 半導体レーザ |
US4905057A (en) * | 1985-12-18 | 1990-02-27 | Hitachi, Ltd. | Semiconductor devices |
US4792958A (en) * | 1986-02-28 | 1988-12-20 | Kabushiki Kaisha Toshiba | Semiconductor laser with mesa stripe waveguide structure |
EP0273344B1 (de) * | 1986-12-22 | 1992-10-14 | Nec Corporation | PNPN-Thyristor |
JPS63164484A (ja) * | 1986-12-26 | 1988-07-07 | Sharp Corp | 半導体レ−ザ素子 |
US4773945A (en) * | 1987-09-14 | 1988-09-27 | Ga Technologies, Inc. | Solar cell with low infra-red absorption and method of manufacture |
JPH01235397A (ja) * | 1988-03-16 | 1989-09-20 | Mitsubishi Electric Corp | 半導体レーザ |
-
1989
- 1989-03-28 NL NL8900748A patent/NL8900748A/nl not_active Application Discontinuation
-
1990
- 1990-03-22 DE DE69004842T patent/DE69004842T2/de not_active Expired - Fee Related
- 1990-03-22 EP EP90200679A patent/EP0390262B1/de not_active Expired - Lifetime
- 1990-03-26 KR KR1019900004035A patent/KR900015361A/ko not_active Application Discontinuation
- 1990-03-27 JP JP7580290A patent/JP3093234B2/ja not_active Expired - Fee Related
-
1994
- 1994-05-20 US US08/246,392 patent/US5381024A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5381024A (en) | 1995-01-10 |
EP0390262A1 (de) | 1990-10-03 |
JPH02281785A (ja) | 1990-11-19 |
JP3093234B2 (ja) | 2000-10-03 |
DE69004842T2 (de) | 1994-06-01 |
DE69004842D1 (de) | 1994-01-13 |
EP0390262B1 (de) | 1993-12-01 |
KR900015361A (ko) | 1990-10-26 |
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