DE69002432D1 - Diamant-halbleiter-bauteil und methode zu seiner herstellung. - Google Patents

Diamant-halbleiter-bauteil und methode zu seiner herstellung.

Info

Publication number
DE69002432D1
DE69002432D1 DE9090118997T DE69002432T DE69002432D1 DE 69002432 D1 DE69002432 D1 DE 69002432D1 DE 9090118997 T DE9090118997 T DE 9090118997T DE 69002432 T DE69002432 T DE 69002432T DE 69002432 D1 DE69002432 D1 DE 69002432D1
Authority
DE
Germany
Prior art keywords
production
semiconductor component
diamond semiconductor
diamond
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE9090118997T
Other languages
English (en)
Other versions
DE69002432T2 (de
Inventor
Tunenobu Kimoto
Tadashi Tomikawa
Nobuhiko Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69002432D1 publication Critical patent/DE69002432D1/de
Application granted granted Critical
Publication of DE69002432T2 publication Critical patent/DE69002432T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02376—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02527—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Thermistors And Varistors (AREA)
DE90118997T 1989-10-04 1990-10-04 Diamant-Halbleiter-Bauteil und Methode zu seiner Herstellung. Expired - Fee Related DE69002432T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1259256A JP2775903B2 (ja) 1989-10-04 1989-10-04 ダイヤモンド半導体素子

Publications (2)

Publication Number Publication Date
DE69002432D1 true DE69002432D1 (de) 1993-09-02
DE69002432T2 DE69002432T2 (de) 1993-11-18

Family

ID=17331578

Family Applications (1)

Application Number Title Priority Date Filing Date
DE90118997T Expired - Fee Related DE69002432T2 (de) 1989-10-04 1990-10-04 Diamant-Halbleiter-Bauteil und Methode zu seiner Herstellung.

Country Status (4)

Country Link
US (2) US5144380A (de)
EP (1) EP0421397B1 (de)
JP (1) JP2775903B2 (de)
DE (1) DE69002432T2 (de)

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JP2799744B2 (ja) * 1989-09-11 1998-09-21 株式会社半導体エネルギー研究所 ダイヤモンドを用いたサーミスタの作製方法
JP2775903B2 (ja) * 1989-10-04 1998-07-16 住友電気工業株式会社 ダイヤモンド半導体素子
JPH03131003A (ja) * 1989-10-16 1991-06-04 Kobe Steel Ltd ダイヤモンド薄膜サーミスタ
JPH07118546B2 (ja) * 1991-03-22 1995-12-18 株式会社神戸製鋼所 ダイヤモンドヘテロ接合型ダイオード
JPH0815160B2 (ja) * 1991-03-29 1996-02-14 株式会社神戸製鋼所 ダイヤモンドショットキーゲート型電界効果トランジスタ
JPH04302172A (ja) * 1991-03-29 1992-10-26 Kobe Steel Ltd ダイヤモンドショットキーダイオード
EP0543392A3 (en) * 1991-11-21 1993-10-20 Canon Kk Diamond semiconductor device and method of producing the same
US5285084A (en) * 1992-09-02 1994-02-08 Kobe Steel Usa Diamond schottky diodes and gas sensors fabricated therefrom
US5362975A (en) * 1992-09-02 1994-11-08 Kobe Steel Usa Diamond-based chemical sensors
JP3175887B2 (ja) * 1992-10-27 2001-06-11 株式会社半導体エネルギー研究所 測定装置
JP3117563B2 (ja) * 1992-11-24 2000-12-18 株式会社神戸製鋼所 ダイヤモンド薄膜電界効果トランジスタ
US5403619A (en) * 1993-01-19 1995-04-04 International Business Machines Corporation Solid state ionic polishing of diamond
JP3086556B2 (ja) * 1993-02-09 2000-09-11 株式会社神戸製鋼所 半導体ダイヤモンド層上の耐熱性オーミック電極及びその形成方法
DE69404347D1 (de) * 1993-02-16 1997-08-28 Sumitomo Electric Industries Polykristallines Substrat aus Diamant sowie Verfahren zur dessen Herstellung
JPH06267846A (ja) * 1993-03-10 1994-09-22 Canon Inc ダイヤモンド電子装置およびその製造法
JPH0794303A (ja) * 1993-05-04 1995-04-07 Kobe Steel Ltd 高配向性ダイヤモンド薄膜サーミスタ
JP3549228B2 (ja) * 1993-05-14 2004-08-04 株式会社神戸製鋼所 高配向性ダイヤモンド放熱基板
US5371383A (en) * 1993-05-14 1994-12-06 Kobe Steel Usa Inc. Highly oriented diamond film field-effect transistor
JPH0786311A (ja) * 1993-05-14 1995-03-31 Kobe Steel Ltd 高配向性ダイヤモンド薄膜電界効果トランジスタ
JP3755904B2 (ja) * 1993-05-14 2006-03-15 株式会社神戸製鋼所 ダイヤモンド整流素子
JPH0794805A (ja) * 1993-05-14 1995-04-07 Kobe Steel Ltd 高配向性ダイヤモンド薄膜磁気検出素子及び磁気検出装置
JP3549227B2 (ja) * 1993-05-14 2004-08-04 株式会社神戸製鋼所 高配向性ダイヤモンド薄膜
US5442199A (en) * 1993-05-14 1995-08-15 Kobe Steel Usa, Inc. Diamond hetero-junction rectifying element
US5488232A (en) * 1993-09-28 1996-01-30 North Carolina State University Oriented diamond film structures on non-diamond substrates
JP3310430B2 (ja) * 1993-11-26 2002-08-05 株式会社半導体エネルギー研究所 計測装置および計測方法
JPH07161455A (ja) * 1993-12-09 1995-06-23 Sumitomo Electric Ind Ltd ダイヤモンドヒ−タ
US5514242A (en) * 1993-12-30 1996-05-07 Saint Gobain/Norton Industrial Ceramics Corporation Method of forming a heat-sinked electronic component
US5488350A (en) * 1994-01-07 1996-01-30 Michigan State University Diamond film structures and methods related to same
US5474808A (en) * 1994-01-07 1995-12-12 Michigan State University Method of seeding diamond
JP3789949B2 (ja) * 1994-03-07 2006-06-28 本田技研工業株式会社 半導体装置
DE4415600A1 (de) * 1994-05-04 1995-11-30 Daimler Benz Ag Elektronisches Bauteil mit einer Halbleiter-Komposit-Struktur
JP3498363B2 (ja) * 1994-06-13 2004-02-16 住友電気工業株式会社 ダイヤモンドの合成方法
JP3295921B2 (ja) * 1994-06-20 2002-06-24 住友電気工業株式会社 表面弾性波素子用ダイヤモンド基材及び素子
US5587210A (en) * 1994-06-28 1996-12-24 The United States Of America As Represented By The Secretary Of The Navy Growing and releasing diamonds
DE69529712T2 (de) * 1994-08-03 2003-10-23 Sumitomo Electric Industries Kühlkörper aus synthetischer Diamantschicht
DE4427715C1 (de) * 1994-08-05 1996-02-08 Daimler Benz Ag Komposit-Struktur mit auf einer Diamantschicht und/oder einer diamantähnlichen Schicht angeordneter Halbleiterschicht sowie ein Verfahren zu deren Herstellung
US5646474A (en) * 1995-03-27 1997-07-08 Wayne State University Boron nitride cold cathode
DE19542943C2 (de) * 1995-11-17 2001-03-08 Daimler Chrysler Ag Verfahren zur Herstellung eines mikroelektronischen Bauteils mit einer mehrlagigen Komposit-Struktur
US6082200A (en) * 1997-09-19 2000-07-04 Board Of Trustees Operating Michigan State University Electronic device and method of use thereof
SE9801881D0 (sv) * 1998-05-28 1998-05-28 Asea Brown Boveri A switching device
SE9804135L (sv) 1998-11-30 2000-05-31 Abb Ab Fotokonduktiv omkopplare
AU7436801A (en) * 2000-06-15 2001-12-24 De Beers Ind Diamond Single crystal diamond prepared by cvd
DE10058581C1 (de) * 2000-11-18 2002-03-14 Fraunhofer Ges Forschung Elektromechanisch regelbares elektrisches Widerstandselement
US7402835B2 (en) * 2002-07-18 2008-07-22 Chevron U.S.A. Inc. Heteroatom-containing diamondoid transistors
US7224532B2 (en) * 2002-12-06 2007-05-29 Chevron U.S.A. Inc. Optical uses diamondoid-containing materials
WO2004075273A1 (ja) * 2003-02-24 2004-09-02 Tokyo Gas Company Limited ｎ型ダイヤモンド半導体及びその製造方法
US20050019955A1 (en) * 2003-07-23 2005-01-27 Dahl Jeremy E. Luminescent heterodiamondoids as biological labels
JP4858948B2 (ja) * 2006-01-17 2012-01-18 独立行政法人産業技術総合研究所 不純物傾斜型ダイヤモンド薄膜及びその製造方法並びに該不純物傾斜型ダイヤモンド薄膜を用いたダイオード又はトランジスタ
GB0813490D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
DE102021123907A1 (de) 2021-09-15 2023-03-16 Universität Siegen, Körperschaft des öffentlichen Rechts LED und Herstellungsverfahren dafür

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US4947220A (en) * 1987-08-27 1990-08-07 Yoder Max N Yoked, orthogonally distributed equal reactance amplifier
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US4929986A (en) * 1987-09-25 1990-05-29 The United States Of America As Represented By The Secretary Of The Navy High power diamond traveling wave amplifier
JP2584642B2 (ja) * 1987-12-17 1997-02-26 出光石油化学株式会社 ショットキーダイオードおよびその製造方法
JP2671259B2 (ja) * 1988-03-28 1997-10-29 住友電気工業株式会社 ショットキー接合半導体装置
JPH01308900A (ja) * 1988-06-06 1989-12-13 Canon Inc ダイヤモンド半導体の製造方法
JPH01317197A (ja) * 1988-06-16 1989-12-21 Kanegafuchi Chem Ind Co Ltd ダイヤモンド薄膜基板およびその製法
JP2628601B2 (ja) * 1988-07-12 1997-07-09 富士通株式会社 ダイアモンド被覆超硬合金および超硬合金のダイアモンド被覆方法
EP0420188A1 (de) * 1989-09-27 1991-04-03 Sumitomo Electric Industries, Ltd. Halbleitende Heteroübergangsstruktur
JP2775903B2 (ja) * 1989-10-04 1998-07-16 住友電気工業株式会社 ダイヤモンド半導体素子
US4981818A (en) * 1990-02-13 1991-01-01 General Electric Company Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors
US5142350A (en) * 1990-07-16 1992-08-25 General Motors Corporation Transistor having cubic boron nitride layer

Also Published As

Publication number Publication date
EP0421397A1 (de) 1991-04-10
US5144380A (en) 1992-09-01
DE69002432T2 (de) 1993-11-18
US5306928A (en) 1994-04-26
JPH03120865A (ja) 1991-05-23
EP0421397B1 (de) 1993-07-28
JP2775903B2 (ja) 1998-07-16

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee