DE68923580T2 - Integrierte Halbleiterschaltungsanordnung. - Google Patents

Integrierte Halbleiterschaltungsanordnung.

Info

Publication number
DE68923580T2
DE68923580T2 DE68923580T DE68923580T DE68923580T2 DE 68923580 T2 DE68923580 T2 DE 68923580T2 DE 68923580 T DE68923580 T DE 68923580T DE 68923580 T DE68923580 T DE 68923580T DE 68923580 T2 DE68923580 T2 DE 68923580T2
Authority
DE
Germany
Prior art keywords
circuit arrangement
semiconductor circuit
integrated semiconductor
integrated
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68923580T
Other languages
English (en)
Other versions
DE68923580D1 (de
Inventor
Yoshiaki Okano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE68923580D1 publication Critical patent/DE68923580D1/de
Publication of DE68923580T2 publication Critical patent/DE68923580T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11898—Input and output buffer/driver structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE68923580T 1988-05-23 1989-05-23 Integrierte Halbleiterschaltungsanordnung. Expired - Fee Related DE68923580T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63125454A JPH01293647A (ja) 1988-05-23 1988-05-23 半導体装置

Publications (2)

Publication Number Publication Date
DE68923580D1 DE68923580D1 (de) 1995-08-31
DE68923580T2 true DE68923580T2 (de) 1996-01-11

Family

ID=14910495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923580T Expired - Fee Related DE68923580T2 (de) 1988-05-23 1989-05-23 Integrierte Halbleiterschaltungsanordnung.

Country Status (4)

Country Link
EP (1) EP0344055B1 (de)
JP (1) JPH01293647A (de)
KR (1) KR920004088B1 (de)
DE (1) DE68923580T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164811A (en) * 1990-04-20 1992-11-17 Seiko Epson Corporation Semiconductor integrated circuit with varying channel widths
JP3079599B2 (ja) * 1990-04-20 2000-08-21 セイコーエプソン株式会社 半導体集積回路及びその製造方法
US5532416A (en) * 1994-07-20 1996-07-02 Monsanto Company Benzoyl derivatives and synthesis thereof
US5869688A (en) * 1994-07-20 1999-02-09 Monsanto Company Preparation of substituted 3-aryl-5-haloalkyl-pyrazoles having herbicidal activity

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211248A (en) * 1981-06-22 1982-12-25 Hitachi Ltd Semiconductor integrated circuit device
JPS62279656A (ja) * 1986-05-29 1987-12-04 Fuji Photo Film Co Ltd マスタスライス集積回路装置
JPS63108733A (ja) * 1986-10-24 1988-05-13 Nec Corp 半導体集積回路

Also Published As

Publication number Publication date
EP0344055A2 (de) 1989-11-29
JPH01293647A (ja) 1989-11-27
KR920004088B1 (en) 1992-05-23
EP0344055A3 (de) 1991-01-09
EP0344055B1 (de) 1995-07-26
KR900019198A (ko) 1990-12-24
DE68923580D1 (de) 1995-08-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee