DE68920772D1 - Optisches Ausrichtungssystem zum Gebrauch in der Photolithographie mit reduziertem, durch den Reflexionsgrad bedingten Fehler. - Google Patents
Optisches Ausrichtungssystem zum Gebrauch in der Photolithographie mit reduziertem, durch den Reflexionsgrad bedingten Fehler.Info
- Publication number
- DE68920772D1 DE68920772D1 DE68920772T DE68920772T DE68920772D1 DE 68920772 D1 DE68920772 D1 DE 68920772D1 DE 68920772 T DE68920772 T DE 68920772T DE 68920772 T DE68920772 T DE 68920772T DE 68920772 D1 DE68920772 D1 DE 68920772D1
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- stage
- alignment
- photolithography
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7069—Alignment mark illumination, e.g. darkfield, dual focus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/193,887 US4855792A (en) | 1988-05-13 | 1988-05-13 | Optical alignment system for use in photolithography and having reduced reflectance errors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68920772D1 true DE68920772D1 (de) | 1995-03-09 |
DE68920772T2 DE68920772T2 (de) | 1995-07-27 |
Family
ID=22715425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68920772T Expired - Fee Related DE68920772T2 (de) | 1988-05-13 | 1989-04-21 | Optisches Ausrichtungssystem zum Gebrauch in der Photolithographie mit reduziertem, durch den Reflexionsgrad bedingten Fehler. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4855792A (de) |
EP (1) | EP0341848B1 (de) |
JP (1) | JPH0218924A (de) |
AT (1) | ATE117813T1 (de) |
DE (1) | DE68920772T2 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5168306A (en) * | 1989-04-04 | 1992-12-01 | Asahi Kogaku Kogyo Kabushiki Kaisha | Exposure apparatus |
US5198857A (en) * | 1990-03-30 | 1993-03-30 | Ushio Denski Kabushiki Kaisha | Film exposure apparatus and method of exposure using the same |
DE4304912C2 (de) * | 1993-02-18 | 2003-03-06 | Klaus Siebert | Verfahren und Vorrichtung zur durchgehend automatischen Chipherstellung unter Vakuum |
EP0701383A1 (de) * | 1994-09-08 | 1996-03-13 | Zellweger Luwa Ag | Verfahren und Vorrichtung zur Übertragung von Daten |
US5920378A (en) * | 1995-03-14 | 1999-07-06 | Nikon Corporation | Projection exposure apparatus |
US5767523A (en) * | 1997-04-09 | 1998-06-16 | Svg Lithography Systems, Inc. | Multiple detector alignment system for photolithography |
JP4029130B2 (ja) | 1997-06-03 | 2008-01-09 | 株式会社ニコン | 露光装置及び露光方法 |
US7274430B2 (en) * | 1998-02-20 | 2007-09-25 | Carl Zeiss Smt Ag | Optical arrangement and projection exposure system for microlithography with passive thermal compensation |
US7385671B2 (en) * | 2004-05-28 | 2008-06-10 | Azores Corporation | High speed lithography machine and method |
US20060219947A1 (en) * | 2005-03-03 | 2006-10-05 | Asml Netherlands B.V. | Dedicated metrology stage for lithography applications |
US8547522B2 (en) * | 2005-03-03 | 2013-10-01 | Asml Netherlands B.V. | Dedicated metrology stage for lithography applications |
JP2006313885A (ja) * | 2005-04-04 | 2006-11-16 | Canon Inc | 露光装置 |
US7755742B2 (en) * | 2005-10-11 | 2010-07-13 | Asml Netherlands B.V. | Lithographic apparatus with mounted sensor |
DE102008004762A1 (de) | 2008-01-16 | 2009-07-30 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage für die Mikrolithographie mit einer Messeinrichtung |
US9291560B2 (en) | 2012-04-24 | 2016-03-22 | Seagate Technology Llc | Characterization of near field transducers |
US9613643B2 (en) * | 2013-08-05 | 2017-04-04 | Seagate Technology Llc | Alignment of optical components |
KR102426485B1 (ko) | 2017-09-29 | 2022-07-27 | 온투 이노베이션 아이엔씨. | 리소그래피 노광 공정의 최적화를 위한 시스템 및 방법 |
US11687010B2 (en) | 2020-02-21 | 2023-06-27 | Onto Innovation Inc. | System and method for correcting overlay errors in a lithographic process |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS529503B2 (de) * | 1972-05-26 | 1977-03-16 | ||
US4109158A (en) * | 1976-05-27 | 1978-08-22 | Western Electric Company, Inc. | Apparatus for positioning a pair of elements into aligned intimate contact |
JPS602772B2 (ja) * | 1976-11-01 | 1985-01-23 | 株式会社日立製作所 | 露光装置 |
JPS5425169A (en) * | 1977-07-27 | 1979-02-24 | Mitsubishi Electric Corp | Matching method for photo mask against semiconductor wafer |
US4286201A (en) * | 1979-02-21 | 1981-08-25 | Amistar Corporation | Automatic part positioning system |
JPS56111225A (en) * | 1980-02-01 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | X ray exposuring device |
US4292576A (en) * | 1980-02-29 | 1981-09-29 | The United States Of America As Represented By The Secretary Of The Air Force | Mask-slice alignment method |
US4385238A (en) * | 1981-03-03 | 1983-05-24 | Veeco Instruments Incorporated | Reregistration system for a charged particle beam exposure system |
DE3318980C2 (de) * | 1982-07-09 | 1986-09-18 | Perkin-Elmer Censor Anstalt, Vaduz | Vorrichtung zum Justieren beim Projektionskopieren von Masken |
US4629313A (en) * | 1982-10-22 | 1986-12-16 | Nippon Kogaku K.K. | Exposure apparatus |
JPS6018738A (ja) * | 1983-07-11 | 1985-01-30 | Nippon Kogaku Kk <Nikon> | 投影露光装置 |
JPS59119204A (ja) * | 1982-12-27 | 1984-07-10 | Toshiba Corp | マ−ク位置検出方法 |
JPS6142915A (ja) * | 1984-08-06 | 1986-03-01 | Sanyo Electric Co Ltd | X線マスク転写装置 |
US4623608A (en) * | 1985-03-14 | 1986-11-18 | Rca Corporation | Method and apparatus for coating a selected area of the surface of an object |
JPS62139387A (ja) * | 1985-12-13 | 1987-06-23 | 株式会社ニコン | パタ−ン描画装置 |
JPS62229942A (ja) * | 1986-03-31 | 1987-10-08 | Univ Nagoya | 光学式位置決め装置 |
US4769680A (en) * | 1987-10-22 | 1988-09-06 | Mrs Technology, Inc. | Apparatus and method for making large area electronic devices, such as flat panel displays and the like, using correlated, aligned dual optical systems |
-
1988
- 1988-05-13 US US07/193,887 patent/US4855792A/en not_active Expired - Lifetime
-
1989
- 1989-04-21 DE DE68920772T patent/DE68920772T2/de not_active Expired - Fee Related
- 1989-04-21 EP EP89303972A patent/EP0341848B1/de not_active Expired - Lifetime
- 1989-04-21 AT AT89303972T patent/ATE117813T1/de not_active IP Right Cessation
- 1989-05-12 JP JP1120208A patent/JPH0218924A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
ATE117813T1 (de) | 1995-02-15 |
DE68920772T2 (de) | 1995-07-27 |
EP0341848B1 (de) | 1995-01-25 |
EP0341848A3 (en) | 1990-06-13 |
EP0341848A2 (de) | 1989-11-15 |
US4855792A (en) | 1989-08-08 |
JPH0218924A (ja) | 1990-01-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |