DE68915148D1 - Fotoresist-zusammensetzung. - Google Patents
Fotoresist-zusammensetzung.Info
- Publication number
- DE68915148D1 DE68915148D1 DE68915148T DE68915148T DE68915148D1 DE 68915148 D1 DE68915148 D1 DE 68915148D1 DE 68915148 T DE68915148 T DE 68915148T DE 68915148 T DE68915148 T DE 68915148T DE 68915148 D1 DE68915148 D1 DE 68915148D1
- Authority
- DE
- Germany
- Prior art keywords
- photoresist composition
- photoresist
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C7/00—Multicolour photographic processes or agents therefor; Regeneration of such processing agents; Photosensitive materials for multicolour processes
- G03C7/04—Additive processes using colour screens; Materials therefor; Preparing or processing such materials
- G03C7/06—Manufacture of colour screens
- G03C7/10—Manufacture of colour screens with regular areas of colour, e.g. bands, lines, dots
- G03C7/12—Manufacture of colour screens with regular areas of colour, e.g. bands, lines, dots by photo-exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/008—Azides
- G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
- G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (13)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3280688 | 1988-02-17 | ||
JP3388088 | 1988-02-18 | ||
JP3387788 | 1988-02-18 | ||
JP3387988 | 1988-02-18 | ||
JP3387888 | 1988-02-18 | ||
JP4064788 | 1988-02-25 | ||
JP12392588 | 1988-05-23 | ||
JP12392688 | 1988-05-23 | ||
JP16512588 | 1988-07-04 | ||
JP16512488 | 1988-07-04 | ||
JP16512888 | 1988-07-04 | ||
JP16512688 | 1988-07-04 | ||
PCT/JP1989/000159 WO1989007786A1 (en) | 1988-02-17 | 1989-02-17 | Photoresist composition |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68915148D1 true DE68915148D1 (de) | 1994-06-09 |
DE68915148T2 DE68915148T2 (de) | 1994-08-18 |
Family
ID=27583268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68915148T Expired - Fee Related DE68915148T2 (de) | 1988-02-17 | 1989-02-17 | Fotoresist-zusammensetzung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5212043A (de) |
EP (1) | EP0380676B1 (de) |
KR (1) | KR900700923A (de) |
DE (1) | DE68915148T2 (de) |
WO (1) | WO1989007786A1 (de) |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0388484B1 (de) * | 1989-03-20 | 1994-09-21 | Siemens Aktiengesellschaft | Hochauflösender Photoresist |
DE58908699D1 (de) * | 1989-03-20 | 1995-01-12 | Siemens Ag | Verfahren zum Erzeugen einer Photoresiststruktur. |
JP2847321B2 (ja) * | 1990-08-14 | 1999-01-20 | 日本石油株式会社 | ポジ型フォトレジスト組成物 |
JP3000745B2 (ja) * | 1991-09-19 | 2000-01-17 | 富士通株式会社 | レジスト組成物とレジストパターンの形成方法 |
JPH0659453A (ja) * | 1992-08-07 | 1994-03-04 | Nippon Oil Co Ltd | ポジ型感光性樹脂組成物 |
US5410004A (en) * | 1994-01-24 | 1995-04-25 | Arizona Chemical Company | Thermal polymerization of dicyclopentadiene |
US5474877A (en) * | 1994-02-24 | 1995-12-12 | Nec Corporation | Method for developing a resist pattern |
WO1996024621A1 (de) * | 1995-02-06 | 1996-08-15 | Siemens Aktiengesellschaft | Polymere für strahlungsempfindliche lacke |
GB9520950D0 (en) * | 1995-10-13 | 1995-12-13 | Martinex R & D Inc | Water-processable chemically amplified resist |
US5807937A (en) * | 1995-11-15 | 1998-09-15 | Carnegie Mellon University | Processes based on atom (or group) transfer radical polymerization and novel (co) polymers having useful structures and properties |
JP2845225B2 (ja) * | 1995-12-11 | 1999-01-13 | 日本電気株式会社 | 高分子化合物、それを用いた感光性樹脂組成物およびパターン形成方法 |
US6103845A (en) | 1996-10-11 | 2000-08-15 | Samsung Electronics Co., Ltd. | Chemically amplified resist polymers |
US5962184A (en) * | 1996-12-13 | 1999-10-05 | International Business Machines Corporation | Photoresist composition comprising a copolymer of a hydroxystyrene and a (meth)acrylate substituted with an alicyclic ester substituent |
KR100211548B1 (ko) * | 1996-12-20 | 1999-08-02 | 김영환 | 원자외선용 감광막 공중합체 및 그 제조방법 |
KR100265597B1 (ko) * | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
US6808859B1 (en) * | 1996-12-31 | 2004-10-26 | Hyundai Electronics Industries Co., Ltd. | ArF photoresist copolymers |
KR100220953B1 (ko) * | 1996-12-31 | 1999-10-01 | 김영환 | 아미드 또는 이미드를 도입한 ArF 감광막 수지 |
KR100225956B1 (ko) * | 1997-01-10 | 1999-10-15 | 김영환 | 아민을 도입한 에이알에프 감광막 수지 |
US6114084A (en) * | 1997-02-27 | 2000-09-05 | Samsung Electronics Co. Ltd. | Chemically amplified resist composition |
KR100252546B1 (ko) * | 1997-11-01 | 2000-04-15 | 김영환 | 공중합체 수지와 포토레지스트 및 그 제조방법 |
KR100254472B1 (ko) * | 1997-11-01 | 2000-05-01 | 김영환 | 신규한 말레이미드계 또는 지방족 환형 올레핀계 단량체와 이들 단량체들의 공중합체수지 및 이수지를 이용한 포토레지스트 |
KR100321080B1 (ko) | 1997-12-29 | 2002-11-22 | 주식회사 하이닉스반도체 | 공중합체수지와이의제조방법및이수지를이용한포토레지스트 |
KR100354871B1 (ko) | 1997-12-31 | 2003-03-10 | 주식회사 하이닉스반도체 | 공중합체수지와그제조방법및이수지를이용한포토레지스트 |
KR100520148B1 (ko) | 1997-12-31 | 2006-05-12 | 주식회사 하이닉스반도체 | 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물 |
KR100313150B1 (ko) * | 1997-12-31 | 2001-12-28 | 박종섭 | 리소콜릴에시딜(메타)아크릴레이트 단량체와 그를 도입한 공중합체 수지 및 이 수지를 이용한 포토레지스트 |
KR100334387B1 (ko) * | 1997-12-31 | 2002-11-22 | 주식회사 하이닉스반도체 | 공중합체수지와그제조방법및이수지를이용한포토레지스트 |
KR100564535B1 (ko) * | 1998-03-16 | 2006-05-25 | 삼성전자주식회사 | 포토레지스트, 이의 제조 방법 및 이를 이용한 사진 식각 방법 |
KR100376983B1 (ko) | 1998-04-30 | 2003-08-02 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한미세패턴의형성방법 |
KR19990081722A (ko) | 1998-04-30 | 1999-11-15 | 김영환 | 카르복실기 함유 지환족 유도체 및 그의 제조방법 |
KR100403325B1 (ko) | 1998-07-27 | 2004-03-24 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한포토레지스트조성물 |
KR20000015014A (ko) | 1998-08-26 | 2000-03-15 | 김영환 | 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물 |
JP3587743B2 (ja) | 1998-08-26 | 2004-11-10 | 株式会社ハイニックスセミコンダクター | フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。 |
US6569971B2 (en) | 1998-08-27 | 2003-05-27 | Hyundai Electronics Industries Co., Ltd. | Polymers for photoresist and photoresist compositions using the same |
KR100274119B1 (ko) * | 1998-10-08 | 2001-03-02 | 박찬구 | 감방사선성 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물 |
JP3680920B2 (ja) | 1999-02-25 | 2005-08-10 | 信越化学工業株式会社 | 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法 |
KR100557620B1 (ko) * | 1999-07-30 | 2006-03-10 | 주식회사 하이닉스반도체 | 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물 |
TW554254B (en) * | 1999-08-06 | 2003-09-21 | Hyundai Electronics Ind | Novel photoresist monomers, polymers thereof and photoresist compositions using the same |
KR100425442B1 (ko) * | 1999-08-24 | 2004-03-30 | 삼성전자주식회사 | 감광성 중합체 및 이를 포함하는 화학 증폭형포토레지스트 조성물 |
US6692888B1 (en) * | 1999-10-07 | 2004-02-17 | Shipley Company, L.L.C. | Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same |
US6423780B1 (en) * | 2001-02-07 | 2002-07-23 | Loctite | Heterobifunctional monomers and uses therefor |
US6946523B2 (en) * | 2001-02-07 | 2005-09-20 | Henkel Corporation | Heterobifunctional monomers and uses therefor |
US6521731B2 (en) * | 2001-02-07 | 2003-02-18 | Henkel Loctite Corporation | Radical polymerizable compositions containing polycyclic olefins |
US7138218B2 (en) * | 2001-12-18 | 2006-11-21 | Hynix Semiconductor Inc. | Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator |
US7338742B2 (en) * | 2003-10-08 | 2008-03-04 | Hynix Semiconductor Inc. | Photoresist polymer and photoresist composition containing the same |
US7270937B2 (en) * | 2003-10-17 | 2007-09-18 | Hynix Semiconductor Inc. | Over-coating composition for photoresist and process for forming photoresist pattern using the same |
KR100680405B1 (ko) * | 2003-11-19 | 2007-02-08 | 주식회사 하이닉스반도체 | Euv용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법 |
WO2005087819A1 (en) * | 2004-03-05 | 2005-09-22 | Carnegie Mellon University | Atom transfer radical polymerization process |
US8273823B2 (en) | 2005-08-23 | 2012-09-25 | Carnegie Mellon University | Atom transfer radical polymerization in microemulsion and true emulsion polymerization processes |
CN101379091B (zh) * | 2005-08-26 | 2012-05-30 | 卡内基梅隆大学 | 在催化剂再生下的聚合方法 |
KR100731326B1 (ko) * | 2005-12-16 | 2007-06-25 | 주식회사 삼양이엠에스 | 양성 포토레지스트 조성물 |
US7745339B2 (en) * | 2006-02-24 | 2010-06-29 | Hynix Semiconductor Inc. | Method for forming fine pattern of semiconductor device |
KR100694412B1 (ko) * | 2006-02-24 | 2007-03-12 | 주식회사 하이닉스반도체 | 반도체소자의 미세패턴 형성방법 |
US7579403B2 (en) * | 2006-04-04 | 2009-08-25 | E. I. Du Pont De Nemours And Company | Stain resist comprising hyperbranched maleic anhydride-diene polymers |
US7579420B2 (en) | 2006-04-04 | 2009-08-25 | E. I. Du Pont De Nemours And Company | Hyperbranched maleic anhydride-diene polymers |
US8313876B2 (en) * | 2006-07-20 | 2012-11-20 | Hynix Semiconductor Inc. | Exposure mask and method for manufacturing semiconductor device using the same |
KR100849800B1 (ko) * | 2006-07-20 | 2008-07-31 | 주식회사 하이닉스반도체 | 노광 마스크 및 이를 이용한 반도체 소자의 제조 방법 |
WO2008057163A2 (en) * | 2006-10-09 | 2008-05-15 | Carnegie Mellon University | Preparation of functional gel particles with a dual crosslink network |
KR100861173B1 (ko) * | 2006-12-01 | 2008-09-30 | 주식회사 하이닉스반도체 | 액침 노광 공정을 이용한 반도체 소자의 패턴 형성 방법 |
US20080274424A1 (en) * | 2007-05-05 | 2008-11-06 | Yisong Yu | Positive photosensitive element comprising vinyl polymers |
US8865797B2 (en) * | 2007-05-23 | 2014-10-21 | Carnegie Mellon University | Hybrid particle composite structures with reduced scattering |
US8252880B2 (en) * | 2007-05-23 | 2012-08-28 | Carnegie Mellon University | Atom transfer dispersion polymerization |
WO2010111708A1 (en) | 2009-03-27 | 2010-09-30 | Carnegie Mellon University | Preparation of functional star macromolecules |
US8853856B2 (en) | 2010-06-22 | 2014-10-07 | International Business Machines Corporation | Methodology for evaluation of electrical characteristics of carbon nanotubes |
US8475667B2 (en) | 2010-06-22 | 2013-07-02 | International Business Machines Corporation | Method of patterning photosensitive material on a substrate containing a latent acid generator |
US8449781B2 (en) | 2010-06-22 | 2013-05-28 | International Business Machines Corporation | Selective etch back process for carbon nanotubes intergration |
WO2012091965A1 (en) | 2010-12-17 | 2012-07-05 | Carnegie Mellon University | Electrochemically mediated atom transfer radical polymerization |
KR101496976B1 (ko) | 2011-07-14 | 2015-03-02 | 스미토모 베이클리트 컴퍼니 리미티드 | 화학 방사선에 대한 이미지-와이즈 노광 후에 패턴화된 층을 형성하는 중합체 및 이의 조성물 |
EP2747753B1 (de) | 2011-08-22 | 2023-03-29 | Carnegie Mellon University | Radikalische atomtransfer-polymerisation unter biologisch verträglichen bedingungen |
US9533297B2 (en) | 2012-02-23 | 2017-01-03 | Carnegie Mellon University | Ligands designed to provide highly active catalyst complexes |
US9422376B2 (en) | 2013-09-16 | 2016-08-23 | Sumitomo Bakelite Co., Ltd. | Amine treated maleic anhydride polymers, compositions and applications thereof |
JP6445525B2 (ja) * | 2014-03-06 | 2018-12-26 | 住友ベークライト株式会社 | ポリマー、感光性樹脂組成物および電子装置 |
US9982070B2 (en) | 2015-01-12 | 2018-05-29 | Carnegie Mellon University | Aqueous ATRP in the presence of an activator regenerator |
TWI659046B (zh) * | 2015-05-06 | 2019-05-11 | Sumitomo Bakelite Co., Ltd. | 作爲永久介電材料的順丁烯二醯亞胺及環烯烴單體之聚合物 |
TWI692674B (zh) | 2015-12-31 | 2020-05-01 | 日商住友電木股份有限公司 | 衍生自降莰二烯和馬來酸酐之聚合物及其用途 |
WO2018132582A1 (en) | 2017-01-12 | 2018-07-19 | Carnegie Mellon University | Surfactant assisted formation of a catalyst complex for emulsion atom transfer radical polymerization processes |
US10738241B2 (en) * | 2018-01-23 | 2020-08-11 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Resin composition, cured photoresist and display panel |
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DE3043967A1 (de) * | 1980-11-21 | 1982-06-24 | Hoechst Ag, 6000 Frankfurt | Lichtempfindliches gemisch auf basis von o-naphthochinondiaziden und daraus hergestelltes lichtempfindliches kopiermaterial |
JPS57151396A (en) * | 1981-03-14 | 1982-09-18 | Ricoh Co Ltd | Diazo system heat-sensitive recording material |
EP0099949B1 (de) * | 1982-07-27 | 1985-12-11 | E.I. Du Pont De Nemours And Company | Wässrig entwickelbare, positiv arbeitende Photopolymerzusammensetzungen |
JPS5940641A (ja) * | 1982-08-31 | 1984-03-06 | Toshiba Corp | 高解像度用ネガ型フオトレジスト組成物 |
JPS59170836A (ja) * | 1983-03-16 | 1984-09-27 | Sumitomo Chem Co Ltd | ポジ型フオトレジスト組成物 |
US4571375A (en) * | 1983-10-24 | 1986-02-18 | Benedikt George M | Ring-opened polynorbornene negative photoresist with bisazide |
US5059513A (en) * | 1983-11-01 | 1991-10-22 | Hoechst Celanese Corporation | Photochemical image process of positive photoresist element with maleimide copolymer |
DE3468542D1 (en) * | 1983-11-03 | 1988-02-11 | Basf Ag | Photopolymerisable registration material for the preparation of printing forms and process for the production of printing forms with this materials |
JPH064832B2 (ja) * | 1984-10-05 | 1994-01-19 | 三井石油化学工業株式会社 | 重合体用接着剤 |
US4663268A (en) * | 1984-12-28 | 1987-05-05 | Eastman Kodak Company | High-temperature resistant photoresists featuring maleimide binders |
US4980264A (en) * | 1985-12-17 | 1990-12-25 | International Business Machines Corporation | Photoresist compositions of controlled dissolution rate in alkaline developers |
US4720445A (en) * | 1986-02-18 | 1988-01-19 | Allied Corporation | Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist |
DE3606155A1 (de) * | 1986-02-26 | 1987-08-27 | Basf Ag | Photopolymerisierbares gemisch, dieses enthaltendes lichtempfindliches aufzeichnungselement sowie verfahren zur herstellung einer flachdruckform mittels dieses lichtempfindlichen aufzeichnungselements |
EP0388482B1 (de) * | 1989-03-20 | 1994-07-06 | Siemens Aktiengesellschaft | Lichtempfindliches Gemisch |
-
1989
- 1989-02-17 DE DE68915148T patent/DE68915148T2/de not_active Expired - Fee Related
- 1989-02-17 US US07/425,191 patent/US5212043A/en not_active Expired - Lifetime
- 1989-02-17 EP EP89902538A patent/EP0380676B1/de not_active Expired - Lifetime
- 1989-02-17 KR KR1019890701900A patent/KR900700923A/ko not_active Application Discontinuation
- 1989-02-17 WO PCT/JP1989/000159 patent/WO1989007786A1/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO1989007786A1 (en) | 1989-08-24 |
DE68915148T2 (de) | 1994-08-18 |
KR900700923A (ko) | 1990-08-17 |
EP0380676A1 (de) | 1990-08-08 |
EP0380676B1 (de) | 1994-05-04 |
US5212043A (en) | 1993-05-18 |
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