DE68906219T2 - Duennfilmkapazitaet und verfahren zur herstellung einer integrierten hybridmikrowellenschaltung. - Google Patents

Duennfilmkapazitaet und verfahren zur herstellung einer integrierten hybridmikrowellenschaltung.

Info

Publication number
DE68906219T2
DE68906219T2 DE8989308527T DE68906219T DE68906219T2 DE 68906219 T2 DE68906219 T2 DE 68906219T2 DE 8989308527 T DE8989308527 T DE 8989308527T DE 68906219 T DE68906219 T DE 68906219T DE 68906219 T2 DE68906219 T2 DE 68906219T2
Authority
DE
Germany
Prior art keywords
producing
thin film
microwave circuit
integrated hybrid
hybrid microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989308527T
Other languages
English (en)
Other versions
DE68906219D1 (de
Inventor
Kazuo Eda
Tetsuji Miwa
Yutaka Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP21100588A external-priority patent/JPH0260205A/ja
Priority claimed from JP8340189A external-priority patent/JPH0666217B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE68906219D1 publication Critical patent/DE68906219D1/de
Publication of DE68906219T2 publication Critical patent/DE68906219T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H01L27/016—Thin-film circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
DE8989308527T 1988-08-25 1989-08-23 Duennfilmkapazitaet und verfahren zur herstellung einer integrierten hybridmikrowellenschaltung. Expired - Fee Related DE68906219T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21100588A JPH0260205A (ja) 1988-08-25 1988-08-25 マイクロ波集積回路とその製造方法
JP8340189A JPH0666217B2 (ja) 1989-03-31 1989-03-31 薄膜コンデンサの製造方法

Publications (2)

Publication Number Publication Date
DE68906219D1 DE68906219D1 (de) 1993-06-03
DE68906219T2 true DE68906219T2 (de) 1993-08-05

Family

ID=26424428

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989308527T Expired - Fee Related DE68906219T2 (de) 1988-08-25 1989-08-23 Duennfilmkapazitaet und verfahren zur herstellung einer integrierten hybridmikrowellenschaltung.

Country Status (3)

Country Link
US (1) US4930044A (de)
EP (1) EP0356212B1 (de)
DE (1) DE68906219T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5088003A (en) * 1989-08-24 1992-02-11 Tosoh Corporation Laminated silicon oxide film capacitors and method for their production
CH680823A5 (de) * 1990-08-17 1992-11-13 Kobe Properties Ltd
JP2912457B2 (ja) * 1991-02-01 1999-06-28 日本板硝子株式会社 薄膜コンデンサ
JP2888005B2 (ja) * 1992-01-24 1999-05-10 住友電気工業株式会社 マイクロ波デバイス用パッケージ
KR0157912B1 (ko) * 1995-11-28 1998-12-15 문정환 반도체 장치의 축전기 전극구조 및 제조 방법
RU2137256C1 (ru) * 1996-09-26 1999-09-10 Самсунг Электроникс Ко., Лтд Гибридная интегральная схема свч-диапазона
JP2002075783A (ja) 2000-08-25 2002-03-15 Alps Electric Co Ltd 温度補償用薄膜コンデンサ
JP2002252143A (ja) 2000-12-21 2002-09-06 Alps Electric Co Ltd 温度補償用薄膜コンデンサ及び電子機器
KR100442669B1 (ko) * 2002-02-18 2004-08-02 삼성전자주식회사 세라믹 커패시터의 고주파 특성 개선방법 및 이를 이용한 디씨 블록
JP2004072625A (ja) * 2002-08-08 2004-03-04 Mitsubishi Electric Corp 高周波電力増幅回路
CN1689146B (zh) * 2003-03-24 2010-05-26 富士通微电子株式会社 半导体器件及其制造方法
JP4461386B2 (ja) * 2005-10-31 2010-05-12 Ｔｄｋ株式会社 薄膜デバイスおよびその製造方法
JP4953877B2 (ja) * 2006-08-30 2012-06-13 京セラ株式会社 コンデンサ及び高周波部品
KR101032342B1 (ko) * 2009-04-24 2011-05-02 삼화콘덴서공업주식회사 임베디드 커패시터 및 이를 이용한 임베디드 커패시터 시트, 및 그의 제조방법
RU2537695C1 (ru) * 2013-06-18 2015-01-10 Федеральное государственное унитарное предприятие "Научно-производственное предприятие "Исток" (ФГУП "НПП "Исток") Способ изготовления мощной гибридной интегральной схемы свч-диапазона
DE102014111781B4 (de) * 2013-08-19 2022-08-11 Korea Atomic Energy Research Institute Verfahren zur elektrochemischen Herstellung einer Silizium-Schicht
US10622468B2 (en) * 2017-02-21 2020-04-14 QROMIS, Inc. RF device integrated on an engineered substrate
CN113380543B (zh) * 2021-06-09 2022-07-22 广州天极电子科技股份有限公司 一种高耐电压型薄膜电容器及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3679942A (en) * 1971-02-09 1972-07-25 Rca Corp Metal-oxide-metal, thin-film capacitors and method of making same
US4437139A (en) * 1982-12-17 1984-03-13 International Business Machines Corporation Laser annealed dielectric for dual dielectric capacitor
JPH0724942B2 (ja) * 1986-08-18 1995-03-22 トヨタ自動車株式会社 超音波溶接方法

Also Published As

Publication number Publication date
DE68906219D1 (de) 1993-06-03
EP0356212A3 (en) 1990-11-22
EP0356212B1 (de) 1993-04-28
US4930044A (en) 1990-05-29
EP0356212A2 (de) 1990-02-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee